DE602004029910D1 - LICHTEMITTIERENDES BAUELEMENT AUS GaN III-V VERBINDUNGSHALBLEITERMATERIAL UND ZUGEHÖRIGES HERSTELLUNGSVERFAHREN - Google Patents

LICHTEMITTIERENDES BAUELEMENT AUS GaN III-V VERBINDUNGSHALBLEITERMATERIAL UND ZUGEHÖRIGES HERSTELLUNGSVERFAHREN

Info

Publication number
DE602004029910D1
DE602004029910D1 DE602004029910T DE602004029910T DE602004029910D1 DE 602004029910 D1 DE602004029910 D1 DE 602004029910D1 DE 602004029910 T DE602004029910 T DE 602004029910T DE 602004029910 T DE602004029910 T DE 602004029910T DE 602004029910 D1 DE602004029910 D1 DE 602004029910D1
Authority
DE
Germany
Prior art keywords
manufacture
light
semiconductor material
emitting component
associated method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004029910T
Other languages
English (en)
Inventor
Shigetaka Tomiya
Osamu Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE602004029910D1 publication Critical patent/DE602004029910D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
DE602004029910T 2003-08-26 2004-08-26 LICHTEMITTIERENDES BAUELEMENT AUS GaN III-V VERBINDUNGSHALBLEITERMATERIAL UND ZUGEHÖRIGES HERSTELLUNGSVERFAHREN Active DE602004029910D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003300738 2003-08-26
PCT/JP2004/012708 WO2005020396A1 (ja) 2003-08-26 2004-08-26 ＧａＮ系ＩＩＩ−Ｖ族化合物半導体発光素子及びその製造方法

Publications (1)

Publication Number Publication Date
DE602004029910D1 true DE602004029910D1 (de) 2010-12-16

Family

ID=34213846

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004029910T Active DE602004029910D1 (de) 2003-08-26 2004-08-26 LICHTEMITTIERENDES BAUELEMENT AUS GaN III-V VERBINDUNGSHALBLEITERMATERIAL UND ZUGEHÖRIGES HERSTELLUNGSVERFAHREN

Country Status (6)

Country Link
US (1) US20080217632A1 (de)
EP (1) EP1667292B1 (de)
JP (2) JPWO2005020396A1 (de)
KR (1) KR101083872B1 (de)
DE (1) DE602004029910D1 (de)
WO (1) WO2005020396A1 (de)

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JP2007088270A (ja) * 2005-09-22 2007-04-05 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
JP2007201146A (ja) * 2006-01-26 2007-08-09 Toyoda Gosei Co Ltd 発光素子及びその製造方法
DE102007044439B4 (de) 2007-09-18 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit Quantentopfstruktur
TWI466314B (zh) * 2008-03-05 2014-12-21 Advanced Optoelectronic Tech 三族氮化合物半導體發光二極體
US20090256165A1 (en) * 2008-04-14 2009-10-15 Katherine Louise Smith Method of growing an active region in a semiconductor device using molecular beam epitaxy
JP2009259953A (ja) * 2008-04-15 2009-11-05 Sharp Corp 窒化物半導体レーザ素子
JP2010003913A (ja) * 2008-06-20 2010-01-07 Sharp Corp 窒化物半導体発光ダイオード素子およびその製造方法
JP4900336B2 (ja) * 2008-07-10 2012-03-21 住友電気工業株式会社 Ｉｉｉ族窒化物発光素子を製造する方法、及びｉｉｉ族窒化物発光素子
CN102439740B (zh) 2009-03-06 2015-01-14 李贞勋 发光器件
DE102009015569B9 (de) * 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
EP2461436B1 (de) * 2009-07-31 2020-05-27 Nichia Corporation Nitridhalbleiterlaserdiode
DE102009037416B4 (de) * 2009-08-13 2021-10-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektrisch gepumpter optoelektronischer Halbleiterchip
JP5044692B2 (ja) * 2009-08-17 2012-10-10 株式会社東芝 窒化物半導体発光素子
KR101646255B1 (ko) 2009-12-22 2016-08-05 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR101644156B1 (ko) * 2010-01-18 2016-07-29 서울바이오시스 주식회사 양자우물 구조의 활성 영역을 갖는 발광 소자
KR20120138080A (ko) * 2011-06-14 2012-12-24 엘지이노텍 주식회사 발광 소자
KR101908657B1 (ko) 2012-06-08 2018-10-16 엘지이노텍 주식회사 발광소자
JP5383876B1 (ja) 2012-08-01 2014-01-08 株式会社東芝 半導体発光素子及びその製造方法
KR101953716B1 (ko) 2012-08-23 2019-03-05 엘지이노텍 주식회사 발광소자, 발광 소자 패키지 및 조명 시스템
DE102013200507A1 (de) * 2013-01-15 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP2015038949A (ja) * 2013-07-17 2015-02-26 株式会社東芝 半導体発光素子及びその製造方法
KR102164796B1 (ko) 2014-08-28 2020-10-14 삼성전자주식회사 나노구조 반도체 발광소자
JP2016063176A (ja) 2014-09-22 2016-04-25 スタンレー電気株式会社 半導体発光素子
JP2016063175A (ja) 2014-09-22 2016-04-25 スタンレー電気株式会社 半導体発光素子
JP6699561B2 (ja) * 2014-12-26 2020-05-27 ソニー株式会社 光半導体デバイス
DE102016116425A1 (de) * 2016-09-02 2018-03-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102016117477A1 (de) * 2016-09-16 2018-03-22 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
JP7328558B2 (ja) * 2020-05-27 2023-08-17 日亜化学工業株式会社 発光素子及び発光素子の製造方法
KR20210146805A (ko) 2020-05-27 2021-12-06 니치아 카가쿠 고교 가부시키가이샤 발광소자 및 발광소자의 제조 방법
JP7419652B2 (ja) 2021-11-22 2024-01-23 日亜化学工業株式会社 発光素子

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JP2966982B2 (ja) * 1991-08-30 1999-10-25 株式会社東芝 半導体レーザ
JPH07122812A (ja) * 1993-10-27 1995-05-12 Fujitsu Ltd 半導体レーザ
JPH09139543A (ja) * 1995-11-15 1997-05-27 Hitachi Ltd 半導体レーザ素子
JPH1065271A (ja) * 1996-08-13 1998-03-06 Toshiba Corp 窒化ガリウム系半導体光発光素子
JP3014339B2 (ja) * 1997-04-25 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
GB2327145A (en) * 1997-07-10 1999-01-13 Sharp Kk Graded layers in an optoelectronic semiconductor device
JP3857417B2 (ja) * 1998-05-13 2006-12-13 日亜化学工業株式会社 窒化物半導体素子
JP3519990B2 (ja) * 1998-12-09 2004-04-19 三洋電機株式会社 発光素子及びその製造方法
JP3705047B2 (ja) * 1998-12-15 2005-10-12 日亜化学工業株式会社 窒化物半導体発光素子
JP2000261106A (ja) * 1999-01-07 2000-09-22 Matsushita Electric Ind Co Ltd 半導体発光素子、その製造方法及び光ディスク装置
JP3372226B2 (ja) * 1999-02-10 2003-01-27 日亜化学工業株式会社 窒化物半導体レーザ素子
JP2000349393A (ja) * 1999-03-26 2000-12-15 Fuji Xerox Co Ltd 半導体デバイス、面発光型半導体レーザ、及び端面発光型半導体レーザ
JP2001160627A (ja) * 1999-11-30 2001-06-12 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP4501194B2 (ja) * 1999-12-08 2010-07-14 日亜化学工業株式会社 窒化物半導体発光素子
JP4032636B2 (ja) * 1999-12-13 2008-01-16 日亜化学工業株式会社 発光素子
JP4342134B2 (ja) * 2000-12-28 2009-10-14 日亜化学工業株式会社 窒化物半導体レーザ素子
JP4075324B2 (ja) * 2001-05-10 2008-04-16 日亜化学工業株式会社 窒化物半導体素子
US6927412B2 (en) * 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter

Also Published As

Publication number Publication date
WO2005020396A1 (ja) 2005-03-03
KR20060114683A (ko) 2006-11-07
EP1667292A4 (de) 2007-09-19
KR101083872B1 (ko) 2011-11-15
JP5434882B2 (ja) 2014-03-05
EP1667292B1 (de) 2010-11-03
US20080217632A1 (en) 2008-09-11
EP1667292A1 (de) 2006-06-07
JPWO2005020396A1 (ja) 2006-10-19
JP2011054982A (ja) 2011-03-17

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