DE602005022657D1 - III-V Nitrid Halbleiteranordnung und Verfahren zur Herstellung - Google Patents

III-V Nitrid Halbleiteranordnung und Verfahren zur Herstellung

Info

Publication number
DE602005022657D1
DE602005022657D1 DE602005022657T DE602005022657T DE602005022657D1 DE 602005022657 D1 DE602005022657 D1 DE 602005022657D1 DE 602005022657 T DE602005022657 T DE 602005022657T DE 602005022657 T DE602005022657 T DE 602005022657T DE 602005022657 D1 DE602005022657 D1 DE 602005022657D1
Authority
DE
Germany
Prior art keywords
iii
manufacture
semiconductor device
nitride semiconductor
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005022657T
Other languages
English (en)
Inventor
Masahiro Hikita
Hiroaki Ueno
Yutaka Hirose
Manabu Yanagihara
Yasuhiro Uemoto
Tsuyoshi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of DE602005022657D1 publication Critical patent/DE602005022657D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE602005022657T 2004-09-17 2005-06-21 III-V Nitrid Halbleiteranordnung und Verfahren zur Herstellung Active DE602005022657D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004270925A JP2006086398A (ja) 2004-09-17 2004-09-17 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
DE602005022657D1 true DE602005022657D1 (de) 2010-09-16

Family

ID=35457763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005022657T Active DE602005022657D1 (de) 2004-09-17 2005-06-21 III-V Nitrid Halbleiteranordnung und Verfahren zur Herstellung

Country Status (5)

Country Link
US (1) US7291872B2 (de)
EP (1) EP1638147B1 (de)
JP (1) JP2006086398A (de)
CN (1) CN100539196C (de)
DE (1) DE602005022657D1 (de)

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US7675090B2 (en) 2005-05-13 2010-03-09 Flextronics International Usa, Inc. Semiconductor device having a contact on a buffer layer thereof and method of forming the same
US7285807B2 (en) 2005-08-25 2007-10-23 Coldwatt, Inc. Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the same
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JP2007157829A (ja) * 2005-12-01 2007-06-21 Matsushita Electric Ind Co Ltd 半導体装置
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US7541640B2 (en) 2006-06-21 2009-06-02 Flextronics International Usa, Inc. Vertical field-effect transistor and method of forming the same
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JP5762049B2 (ja) * 2011-02-28 2015-08-12 ルネサスエレクトロニクス株式会社 半導体装置
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JP7307856B2 (ja) * 2020-05-13 2023-07-12 ヌヴォトンテクノロジージャパン株式会社 電力増幅用半導体装置
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Also Published As

Publication number Publication date
JP2006086398A (ja) 2006-03-30
CN100539196C (zh) 2009-09-09
EP1638147A3 (de) 2006-04-19
US7291872B2 (en) 2007-11-06
EP1638147B1 (de) 2010-08-04
CN1750273A (zh) 2006-03-22
EP1638147A2 (de) 2006-03-22
US20060060895A1 (en) 2006-03-23

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