TWI452723B - 光電半導體晶片 - Google Patents

光電半導體晶片 Download PDF

Info

Publication number
TWI452723B
TWI452723B TW099108846A TW99108846A TWI452723B TW I452723 B TWI452723 B TW I452723B TW 099108846 A TW099108846 A TW 099108846A TW 99108846 A TW99108846 A TW 99108846A TW I452723 B TWI452723 B TW I452723B
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
quantum well
optoelectronic semiconductor
active quantum
indium content
Prior art date
Application number
TW099108846A
Other languages
English (en)
Chinese (zh)
Other versions
TW201044635A (en
Inventor
亞德里恩 史帝芬 阿夫拉梅斯庫
迪希瑞 科瑞恩
克里斯多夫 艾奇爾
馬提亞 沙貝絲爾
史蒂芬 盧特蓋恩
優偉 史特瑞柏
Original Assignee
歐斯朗光電半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歐斯朗光電半導體公司 filed Critical 歐斯朗光電半導體公司
Publication of TW201044635A publication Critical patent/TW201044635A/zh
Application granted granted Critical
Publication of TWI452723B publication Critical patent/TWI452723B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy
    • Y10S977/951—Laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
TW099108846A 2009-03-30 2010-03-25 光電半導體晶片 TWI452723B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009015569.4A DE102009015569B9 (de) 2009-03-30 2009-03-30 Optoelektronischer Halbleiterchip

Publications (2)

Publication Number Publication Date
TW201044635A TW201044635A (en) 2010-12-16
TWI452723B true TWI452723B (zh) 2014-09-11

Family

ID=42340450

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099108846A TWI452723B (zh) 2009-03-30 2010-03-25 光電半導體晶片

Country Status (8)

Country Link
US (2) US8908733B2 (enExample)
EP (1) EP2415085B1 (enExample)
JP (3) JP2012522390A (enExample)
KR (2) KR101645057B1 (enExample)
CN (2) CN104319331B (enExample)
DE (1) DE102009015569B9 (enExample)
TW (1) TWI452723B (enExample)
WO (1) WO2010112310A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009015569B9 (de) * 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
KR101712049B1 (ko) * 2010-11-17 2017-03-03 엘지이노텍 주식회사 발광 소자
JP5417307B2 (ja) * 2010-12-02 2014-02-12 株式会社東芝 半導体発光素子
JP2014067893A (ja) 2012-09-26 2014-04-17 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
DE102013200507A1 (de) * 2013-01-15 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102013104351B4 (de) 2013-04-29 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips
JP2015038949A (ja) * 2013-07-17 2015-02-26 株式会社東芝 半導体発光素子及びその製造方法
KR102019858B1 (ko) * 2013-07-18 2019-09-09 엘지이노텍 주식회사 발광소자 및 조명시스템
FR3009894B1 (fr) 2013-08-22 2016-12-30 Commissariat Energie Atomique Diode electroluminescente dont une zone active comporte des couches d'inn
JP6183060B2 (ja) * 2013-08-24 2017-08-23 日亜化学工業株式会社 半導体発光素子
CN108463930B (zh) * 2016-01-08 2020-05-12 索尼公司 半导体发光器件、显示单元和电子设备
DE102016117477B4 (de) * 2016-09-16 2026-03-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterschichtenfolge und optoelektronischer Halbleiterchip
JP7295371B2 (ja) * 2018-08-31 2023-06-21 日亜化学工業株式会社 半導体レーザ素子
JP6891865B2 (ja) * 2018-10-25 2021-06-18 日亜化学工業株式会社 発光素子
US10735354B1 (en) 2018-10-30 2020-08-04 Facebook, Inc. Photo space user interface facilitating contextual discussion between users of a social networking system
FR3096508A1 (fr) * 2019-05-21 2020-11-27 Aledia Dispositif optoélectronique à diodes électroluminescentes
US20240395966A1 (en) * 2023-05-24 2024-11-28 Wisconsin Alumni Research Foundation Light-emitters with group iii-nitride-based quantum well active regions having gan interlayers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356256A (ja) * 2003-05-28 2004-12-16 Sharp Corp 窒化物半導体発光素子及びその製造方法
EP1667292A1 (en) * 2003-08-26 2006-06-07 Sony Corporation GaN III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
WO2007023419A1 (en) * 2005-08-24 2007-03-01 Koninklijke Philips Electronics N.V. Iii-nitride light-emitting device with double heterostructure light-emitting region

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950000119B1 (ko) * 1991-12-30 1995-01-09 주식회사 금성사 반도체 레이저의 구조
JP3543498B2 (ja) * 1996-06-28 2004-07-14 豊田合成株式会社 ３族窒化物半導体発光素子
DE19955747A1 (de) * 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
JP3876649B2 (ja) * 2001-06-05 2007-02-07 ソニー株式会社 窒化物半導体レーザ及びその製造方法
ATE387736T1 (de) * 2001-11-05 2008-03-15 Nichia Corp Halbleiterelement
US6618413B2 (en) * 2001-12-21 2003-09-09 Xerox Corporation Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure
JP2003229645A (ja) * 2002-01-31 2003-08-15 Nec Corp 量子井戸構造およびそれを用いた半導体素子ならびに半導体素子の製造方法
JP4047150B2 (ja) * 2002-11-28 2008-02-13 ローム株式会社 半導体発光素子
JP2004356356A (ja) 2003-05-29 2004-12-16 Oki Electric Ind Co Ltd 洗浄終了判定方法および洗浄装置
US6995389B2 (en) 2003-06-18 2006-02-07 Lumileds Lighting, U.S., Llc Heterostructures for III-nitride light emitting devices
US7138648B2 (en) * 2003-12-17 2006-11-21 Palo Alto Research Center Incorporated Ultraviolet group III-nitride-based quantum well laser diodes
KR100513923B1 (ko) 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
DE102005035722B9 (de) * 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
JP5244297B2 (ja) * 2006-04-12 2013-07-24 株式会社日立製作所 半導体発光素子
JP2008288397A (ja) 2007-05-17 2008-11-27 Eudyna Devices Inc 半導体発光装置
KR101459752B1 (ko) 2007-06-22 2014-11-13 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102007044439B4 (de) * 2007-09-18 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit Quantentopfstruktur
JP5281162B2 (ja) * 2008-09-03 2013-09-04 テレフオンアクチーボラゲット エル エム エリクソン（パブル） 通信帯域を割当てるための方法及び関連する装置
DE102009015569B9 (de) * 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US8779412B2 (en) * 2011-07-20 2014-07-15 Samsung Electronics Co., Ltd. Semiconductor light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356256A (ja) * 2003-05-28 2004-12-16 Sharp Corp 窒化物半導体発光素子及びその製造方法
EP1667292A1 (en) * 2003-08-26 2006-06-07 Sony Corporation GaN III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
WO2007023419A1 (en) * 2005-08-24 2007-03-01 Koninklijke Philips Electronics N.V. Iii-nitride light-emitting device with double heterostructure light-emitting region

Also Published As

Publication number Publication date
CN102369606B (zh) 2014-10-01
KR20160085909A (ko) 2016-07-18
JP2016157977A (ja) 2016-09-01
EP2415085B1 (de) 2019-01-02
KR101704985B1 (ko) 2017-02-08
US20150063395A1 (en) 2015-03-05
JP2012522390A (ja) 2012-09-20
CN104319331B (zh) 2017-05-10
KR101645057B1 (ko) 2016-08-02
US20130028281A1 (en) 2013-01-31
US8908733B2 (en) 2014-12-09
US9202971B2 (en) 2015-12-01
DE102009015569A1 (de) 2010-10-07
WO2010112310A1 (de) 2010-10-07
KR20120009475A (ko) 2012-01-31
CN102369606A (zh) 2012-03-07
JP5933775B2 (ja) 2016-06-15
JP2015092636A (ja) 2015-05-14
EP2415085A1 (de) 2012-02-08
DE102009015569B4 (de) 2023-03-23
TW201044635A (en) 2010-12-16
CN104319331A (zh) 2015-01-28
DE102009015569B9 (de) 2023-06-29

Similar Documents

Publication Publication Date Title
CN102369606B (zh) 光电子半导体芯片
US8471240B2 (en) Semiconductor layer structure with superlattice
US9059353B2 (en) Optoelectronic component
KR20130078345A (ko) 스트레인 완충층을 이용하여 발광효율이 우수한 질화물계 발광소자
KR20070081184A (ko) 질화물계 반도체 발광소자 및 그 제조방법
US10522699B2 (en) Optoelectronic semiconductor chip
TWI502767B (zh) 半導體發光結構
US20120201264A1 (en) Light emitting device with varying barriers
US9634184B2 (en) Optoelectronic semiconductor device
JP2024540867A (ja) 横方向電流注入を有する光学装置
KR100604406B1 (ko) 질화물 반도체 소자
US9130100B2 (en) Light emitting diode with three-dimensional nano-structures
US20120132951A1 (en) Light emitting diode and method for fabricating the same
KR101682345B1 (ko) 전기적으로 펌핑된 광전자 반도체 칩
KR101056754B1 (ko) 3족 질화물 반도체 발광소자
KR101123012B1 (ko) 반도체 발광소자
KR101784109B1 (ko) 양자우물구조 및 이를 포함하는 청색 발광 다이오드
KR100896287B1 (ko) 발광 소자
TW201230381A (en) Light-emitting diode and method for manufacturing same

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees