JP2013187332A5 - - Google Patents

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Publication number
JP2013187332A5
JP2013187332A5 JP2012050955A JP2012050955A JP2013187332A5 JP 2013187332 A5 JP2013187332 A5 JP 2013187332A5 JP 2012050955 A JP2012050955 A JP 2012050955A JP 2012050955 A JP2012050955 A JP 2012050955A JP 2013187332 A5 JP2013187332 A5 JP 2013187332A5
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JP
Japan
Prior art keywords
light emitting
layer
semiconductor
semiconductor layer
current
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JP2012050955A
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English (en)
Japanese (ja)
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JP5694215B2 (ja
JP2013187332A (ja
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Priority to JP2012050955A priority Critical patent/JP5694215B2/ja
Priority claimed from JP2012050955A external-priority patent/JP5694215B2/ja
Priority to US13/601,520 priority patent/US9324917B2/en
Publication of JP2013187332A publication Critical patent/JP2013187332A/ja
Publication of JP2013187332A5 publication Critical patent/JP2013187332A5/ja
Priority to US14/495,993 priority patent/US20150048404A1/en
Application granted granted Critical
Publication of JP5694215B2 publication Critical patent/JP5694215B2/ja
Expired - Fee Related legal-status Critical Current
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JP2012050955A 2012-03-07 2012-03-07 半導体発光素子 Expired - Fee Related JP5694215B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012050955A JP5694215B2 (ja) 2012-03-07 2012-03-07 半導体発光素子
US13/601,520 US9324917B2 (en) 2012-03-07 2012-08-31 Semiconductor light emitting device
US14/495,993 US20150048404A1 (en) 2012-03-07 2014-09-25 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012050955A JP5694215B2 (ja) 2012-03-07 2012-03-07 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2013187332A JP2013187332A (ja) 2013-09-19
JP2013187332A5 true JP2013187332A5 (enExample) 2014-04-03
JP5694215B2 JP5694215B2 (ja) 2015-04-01

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Family Applications (1)

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JP2012050955A Expired - Fee Related JP5694215B2 (ja) 2012-03-07 2012-03-07 半導体発光素子

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US (2) US9324917B2 (enExample)
JP (1) JP5694215B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5792694B2 (ja) * 2012-08-14 2015-10-14 株式会社東芝 半導体発光素子
JP5377725B1 (ja) * 2012-08-21 2013-12-25 株式会社東芝 半導体発光素子
US9196798B2 (en) 2012-09-12 2015-11-24 High Power Opto. Inc. Semiconductor light-emitting device and fabricating method thereof
TWI533472B (zh) * 2012-09-12 2016-05-11 聯勝光電股份有限公司 半導體發光元件及其製造方法
JP5734935B2 (ja) * 2012-09-20 2015-06-17 株式会社東芝 半導体装置及びその製造方法
TWI499077B (zh) 2012-12-04 2015-09-01 High Power Opto Inc 半導體發光元件
JP6067400B2 (ja) 2013-02-12 2017-01-25 株式会社東芝 半導体発光素子
CN106463578B (zh) 2014-05-08 2019-11-22 Lg伊诺特有限公司 发光器件
JP6440392B2 (ja) * 2014-07-10 2018-12-19 シャープ株式会社 半導体発光素子
CN104538225A (zh) * 2014-12-31 2015-04-22 福建联迪商用设备有限公司 电气开关结构与电子设备
JP2016134422A (ja) * 2015-01-16 2016-07-25 株式会社東芝 半導体発光素子およびその製造方法
KR101784406B1 (ko) * 2015-02-25 2017-10-12 금호전기주식회사 투명 전광 장치
JP6563703B2 (ja) * 2015-06-18 2019-08-21 アルパッド株式会社 半導体発光装置
JP6824501B2 (ja) * 2017-02-08 2021-02-03 ウシオ電機株式会社 半導体発光素子
CN110931610B (zh) * 2019-05-08 2022-09-20 深圳第三代半导体研究院 一种正装集成单元二极管芯片
US11870011B2 (en) 2019-06-25 2024-01-09 Beijing Boe Technology Development Co., Ltd. Light-emitting diode and method of manufacturing the same, and display device
CN111584691B (zh) * 2020-05-27 2021-07-06 厦门乾照光电股份有限公司 一种应用于显示屏的led芯片及其制备方法
DE102020124258A1 (de) 2020-09-17 2022-03-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement und verfahren zur herstellung zumindest eines optoelektronischen halbleiterbauelements

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
ATE445233T1 (de) * 2002-01-28 2009-10-15 Nichia Corp Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
US7795623B2 (en) * 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US7679097B2 (en) * 2004-10-21 2010-03-16 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
KR100616693B1 (ko) * 2005-08-09 2006-08-28 삼성전기주식회사 질화물 반도체 발광 소자
JP2008047871A (ja) * 2006-07-18 2008-02-28 Mitsubishi Electric Corp 半導体発光ダイオード
JP5556657B2 (ja) * 2008-05-14 2014-07-23 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
JP5136398B2 (ja) 2008-12-26 2013-02-06 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
JP2010171376A (ja) * 2008-12-26 2010-08-05 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
TW201101537A (en) * 2009-06-19 2011-01-01 Ubilux Optoelectronics Corp Light emitting diode with passivation layer and its manufacturing method
JP5258707B2 (ja) 2009-08-26 2013-08-07 株式会社東芝 半導体発光素子
JP2011198997A (ja) * 2010-03-19 2011-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP5174067B2 (ja) * 2010-03-11 2013-04-03 株式会社東芝 半導体発光素子
KR101039939B1 (ko) * 2010-04-28 2011-06-09 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 이를 포함하는 조명시스템
TW201310706A (zh) * 2011-08-22 2013-03-01 Chi Mei Lighting Tech Corp 發光二極體結構及其製造方法

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