CN102576785B - 电泵浦的光电半导体芯片 - Google Patents

电泵浦的光电半导体芯片 Download PDF

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Publication number
CN102576785B
CN102576785B CN201080035921.1A CN201080035921A CN102576785B CN 102576785 B CN102576785 B CN 102576785B CN 201080035921 A CN201080035921 A CN 201080035921A CN 102576785 B CN102576785 B CN 102576785B
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China
Prior art keywords
semiconductor chip
radiation
optoelectronic semiconductor
generating quantum
quantum well
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Active
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CN201080035921.1A
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English (en)
Chinese (zh)
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CN102576785A (zh
Inventor
马蒂亚斯·彼得
托比亚斯·迈耶
于尔根·奥弗
泷哲也
约阿希姆·赫特功
马蒂亚斯·扎巴蒂尔
安斯加尔·劳布施
安德烈亚斯·比贝尔斯多夫
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN102576785A publication Critical patent/CN102576785A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
CN201080035921.1A 2009-08-13 2010-06-30 电泵浦的光电半导体芯片 Active CN102576785B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009037416.7 2009-08-13
DE102009037416.7A DE102009037416B4 (de) 2009-08-13 2009-08-13 Elektrisch gepumpter optoelektronischer Halbleiterchip
PCT/EP2010/059291 WO2011018273A1 (de) 2009-08-13 2010-06-30 Elektrisch gepumpter optoelektronischer halbleiterchip

Publications (2)

Publication Number Publication Date
CN102576785A CN102576785A (zh) 2012-07-11
CN102576785B true CN102576785B (zh) 2015-05-20

Family

ID=42711811

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080035921.1A Active CN102576785B (zh) 2009-08-13 2010-06-30 电泵浦的光电半导体芯片

Country Status (7)

Country Link
US (1) US8581236B2 (enExample)
EP (1) EP2465148B1 (enExample)
JP (1) JP5705222B2 (enExample)
KR (2) KR101682345B1 (enExample)
CN (1) CN102576785B (enExample)
DE (1) DE102009037416B4 (enExample)
WO (1) WO2011018273A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112011101530B4 (de) 2010-04-30 2021-03-25 Trustees Of Boston University Verfahren zur Herstellung einer optischen Vorrichtung
US8723189B1 (en) 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
DE102013200507A1 (de) * 2013-01-15 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP6010088B2 (ja) * 2014-11-07 2016-10-19 株式会社東芝 半導体発光素子
JP2022172792A (ja) * 2021-05-07 2022-11-17 日機装株式会社 窒化物半導体発光素子

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1505843A (zh) * 2001-06-15 2004-06-16 ���﹫˾ 在SiC衬底上形成的GaN基LED
JP2004289112A (ja) * 2003-03-06 2004-10-14 Ricoh Co Ltd 半導体発光素子およびその製造方法および光送信モジュールおよび光送受信モジュールおよび光通信システム
US20060108603A1 (en) * 2004-10-08 2006-05-25 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light emitting device
US20080217632A1 (en) * 2003-08-26 2008-09-11 Shigetaka Tomiya Gan-Based III-V Compound Semiconductor Light-Emitting Element and Method for Manufacturing Thereof
US20080247435A1 (en) * 2007-04-05 2008-10-09 Yoon Ho Choi Semiconductor laser diode having graded interlayer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023685A (en) * 1988-06-06 1991-06-11 Bethea Clyde G Quantum-well radiation-interactive device, and methods of radiation detection and modulation
JP3304782B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子
JP3705047B2 (ja) * 1998-12-15 2005-10-12 日亜化学工業株式会社 窒化物半導体発光素子
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
JP4032636B2 (ja) * 1999-12-13 2008-01-16 日亜化学工業株式会社 発光素子
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6927412B2 (en) 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
JP2006210692A (ja) * 2005-01-28 2006-08-10 Toyoda Gosei Co Ltd ３族窒化物系化合物半導体発光素子
JP2006332258A (ja) * 2005-05-25 2006-12-07 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
EP1764840A1 (en) * 2005-09-15 2007-03-21 SuperNova Optoelectronics Corporation Gallium nitride semiconductor light emitting device
EP1883141B1 (de) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
WO2008028181A2 (en) * 2006-09-01 2008-03-06 Georgia State University Research Foundation Inc. High operation temperature split-off band infrared detectors
US20090183774A1 (en) * 2007-07-13 2009-07-23 Translucent, Inc. Thin Film Semiconductor-on-Sapphire Solar Cell Devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1505843A (zh) * 2001-06-15 2004-06-16 ���﹫˾ 在SiC衬底上形成的GaN基LED
JP2004289112A (ja) * 2003-03-06 2004-10-14 Ricoh Co Ltd 半導体発光素子およびその製造方法および光送信モジュールおよび光送受信モジュールおよび光通信システム
US20080217632A1 (en) * 2003-08-26 2008-09-11 Shigetaka Tomiya Gan-Based III-V Compound Semiconductor Light-Emitting Element and Method for Manufacturing Thereof
US20060108603A1 (en) * 2004-10-08 2006-05-25 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light emitting device
US20080247435A1 (en) * 2007-04-05 2008-10-09 Yoon Ho Choi Semiconductor laser diode having graded interlayer

Also Published As

Publication number Publication date
CN102576785A (zh) 2012-07-11
DE102009037416A1 (de) 2011-02-17
WO2011018273A1 (de) 2011-02-17
KR20120045049A (ko) 2012-05-08
JP2013502058A (ja) 2013-01-17
EP2465148A1 (de) 2012-06-20
KR101682345B1 (ko) 2016-12-05
DE102009037416B4 (de) 2021-10-14
KR20160142890A (ko) 2016-12-13
US8581236B2 (en) 2013-11-12
KR101733149B1 (ko) 2017-05-08
EP2465148B1 (de) 2017-08-09
US20120161103A1 (en) 2012-06-28
JP5705222B2 (ja) 2015-04-22

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