CN1505843A - 在SiC衬底上形成的GaN基LED - Google Patents
在SiC衬底上形成的GaN基LED Download PDFInfo
- Publication number
- CN1505843A CN1505843A CNA028092058A CN02809205A CN1505843A CN 1505843 A CN1505843 A CN 1505843A CN A028092058 A CNA028092058 A CN A028092058A CN 02809205 A CN02809205 A CN 02809205A CN 1505843 A CN1505843 A CN 1505843A
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- Prior art keywords
- layer
- led
- gan
- quantum well
- gan layer
- Prior art date
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- Granted
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- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 172
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 47
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 230000012010 growth Effects 0.000 claims description 43
- 238000000576 coating method Methods 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 13
- 238000001228 spectrum Methods 0.000 claims description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 7
- 230000002950 deficient Effects 0.000 claims description 6
- 238000003892 spreading Methods 0.000 claims description 6
- 230000007480 spreading Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 230000007850 degeneration Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims 7
- 238000010521 absorption reaction Methods 0.000 claims 1
- 230000003698 anagen phase Effects 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 150000003017 phosphorus Chemical class 0.000 claims 1
- 230000026267 regulation of growth Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 95
- 239000000463 material Substances 0.000 description 22
- 229910052738 indium Inorganic materials 0.000 description 15
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 13
- 229910052733 gallium Inorganic materials 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 239000002800 charge carrier Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 238000001429 visible spectrum Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000025600 response to UV Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 235000019239 indanthrene blue RS Nutrition 0.000 description 1
- UHOKSCJSTAHBSO-UHFFFAOYSA-N indanthrone blue Chemical compound C1=CC=C2C(=O)C3=CC=C4NC5=C6C(=O)C7=CC=CC=C7C(=O)C6=CC=C5NC4=C3C(=O)C2=C1 UHOKSCJSTAHBSO-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000012265 solid product Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
层 | 厚度(不注明就是) | 温度(C) | 导电性 | Al% | In% | |||||||
# | 描述 | 范围 | 优选 | 范围 | 优选 | 范围 | 优选 | 范围 | 优选 | |||
35 | p-GaN | 0.1-0.3um | 0.18um | 900-1020 | 980 | p | 0-10 | 0 | ||||
34 | p-AlGaN | 0-300 | 85 | 850-1020 | 900 | p | 0-40 | 22 | ||||
33 | AlGaN | 0-100 | 30 | 850-1020 | 900 | nida | 0-60 | 40 | ||||
32 | GaN | 0-200 | 80 | 700-900 | 820 | nid | 0-15 | 0 | 0-15 | 0 | ||
5周期MQW(范围=1-10个阱) | 43a | GaN | 0-100 | 25 | 700-900 | 770 | nid | 0-15 | 0 | 0-15 | 0 | |
42 | lnGaN | 10-50 | 25 | 700-900 | 770 | nid | 5-30 | 15 | ||||
43c | GaN | 0-100 | 35 | 700-900 | 820 | nid | 0-15 | 0 | 0-15 | 0 | ||
43b | GaN | 0-300 | 35 | 700-900 | 820 | n | 0-15 | 0 | 0-15 | 0 | ||
30 | GaN | 50-400 | 250 | 700-900 | 820 | n | 0-15 | 0 | 0-15 | 0 | ||
10周期超晶格(范围=2-50个周期) | 41 | GaN | 5-100 | 30 | 700-900 | 780 | n | 0-15 | 0 | 0-15 | 0 | |
40 | InGaN | 5-40 | 15 | 700-900 | 780 | n | 0-15 | 0 | 5-50 | 15 | ||
25 | GaN | 1-4um | 3um | 1000-1150 | 1090 | n | ||||||
26 | SiN | 不连续 | 200-1100 | 700 | n | |||||||
22 | AlGaN | 0-0.5um | 0.3um | 800-1050 | 1000 | n | 5-25 | 12 | ||||
24 | 点和帽 | 不连续 | 800-1000 | 910 | n | 5-25 | 12 | |||||
23 | 点和帽 | 不连续 | 800-1000 | 910 | n | |||||||
21 | SiC衬底 | 2.6um | 3.6um | n |
Claims (96)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29883501P | 2001-06-15 | 2001-06-15 | |
US60/298,835 | 2001-06-15 | ||
PCT/US2002/019013 WO2002103814A1 (en) | 2001-06-15 | 2002-06-12 | Gan based led formed on a sic substrate |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010156574XA Division CN101834245B (zh) | 2001-06-15 | 2002-06-12 | 在SiC衬底上形成的GaN基LED |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1505843A true CN1505843A (zh) | 2004-06-16 |
CN1505843B CN1505843B (zh) | 2010-05-05 |
Family
ID=23152184
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010156574XA Expired - Lifetime CN101834245B (zh) | 2001-06-15 | 2002-06-12 | 在SiC衬底上形成的GaN基LED |
CN028092058A Expired - Lifetime CN1505843B (zh) | 2001-06-15 | 2002-06-12 | 在SiC衬底上形成的GaN基LED |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010156574XA Expired - Lifetime CN101834245B (zh) | 2001-06-15 | 2002-06-12 | 在SiC衬底上形成的GaN基LED |
Country Status (7)
Country | Link |
---|---|
US (3) | US6664560B2 (zh) |
EP (2) | EP1397840A1 (zh) |
JP (2) | JP2004531894A (zh) |
KR (1) | KR20040012754A (zh) |
CN (2) | CN101834245B (zh) |
CA (1) | CA2446656A1 (zh) |
WO (1) | WO2002103814A1 (zh) |
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CN1505843B (zh) | 2010-05-05 |
WO2002103814A1 (en) | 2002-12-27 |
EP2034530B1 (en) | 2015-01-21 |
EP1397840A1 (en) | 2004-03-17 |
US20030020061A1 (en) | 2003-01-30 |
US20030209705A1 (en) | 2003-11-13 |
EP2034530A2 (en) | 2009-03-11 |
CN101834245A (zh) | 2010-09-15 |
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CA2446656A1 (en) | 2002-12-27 |
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JP2009010422A (ja) | 2009-01-15 |
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