JP2011138891A5 - - Google Patents

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Publication number
JP2011138891A5
JP2011138891A5 JP2009297435A JP2009297435A JP2011138891A5 JP 2011138891 A5 JP2011138891 A5 JP 2011138891A5 JP 2009297435 A JP2009297435 A JP 2009297435A JP 2009297435 A JP2009297435 A JP 2009297435A JP 2011138891 A5 JP2011138891 A5 JP 2011138891A5
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JP
Japan
Prior art keywords
nitride semiconductor
layer
semiconductor layer
semiconductor device
mixed crystal
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JP2009297435A
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English (en)
Japanese (ja)
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JP2011138891A (ja
JP5589380B2 (ja
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Publication of JP2011138891A publication Critical patent/JP2011138891A/ja
Publication of JP2011138891A5 publication Critical patent/JP2011138891A5/ja
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JP2009297435A 2009-12-28 2009-12-28 窒化物半導体素子 Active JP5589380B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009297435A JP5589380B2 (ja) 2009-12-28 2009-12-28 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009297435A JP5589380B2 (ja) 2009-12-28 2009-12-28 窒化物半導体素子

Publications (3)

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JP2011138891A JP2011138891A (ja) 2011-07-14
JP2011138891A5 true JP2011138891A5 (enExample) 2013-02-07
JP5589380B2 JP5589380B2 (ja) 2014-09-17

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JP2009297435A Active JP5589380B2 (ja) 2009-12-28 2009-12-28 窒化物半導体素子

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786548B2 (ja) * 2011-08-15 2015-09-30 住友電気工業株式会社 窒化物半導体発光素子を作製する方法
JP2013145799A (ja) * 2012-01-13 2013-07-25 Sony Corp 半導体レーザ素子、及び、半導体レーザ素子の製造方法
WO2013157176A1 (ja) * 2012-04-16 2013-10-24 パナソニック株式会社 半導体発光素子
JP6472093B2 (ja) 2014-03-31 2019-02-20 国立研究開発法人理化学研究所 紫外線発光素子及びそれを用いた電気機器
JPWO2017081947A1 (ja) * 2015-11-12 2018-08-30 ソニー株式会社 半導体発光素子および半導体発光素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002319743A (ja) * 2001-04-20 2002-10-31 Ricoh Co Ltd ｐ型ＩＩＩ族窒化物半導体および半導体装置およびその作製方法
JP5444609B2 (ja) * 2007-11-08 2014-03-19 日亜化学工業株式会社 半導体レーザ素子
US8084763B2 (en) * 2008-10-31 2011-12-27 The Regents Of The University Of California Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
JP5316276B2 (ja) * 2009-01-23 2013-10-16 住友電気工業株式会社 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法
JP5381439B2 (ja) * 2009-07-15 2014-01-08 住友電気工業株式会社 Ｉｉｉ族窒化物半導体光素子

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