JP2020064955A5 - - Google Patents

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Publication number
JP2020064955A5
JP2020064955A5 JP2018195599A JP2018195599A JP2020064955A5 JP 2020064955 A5 JP2020064955 A5 JP 2020064955A5 JP 2018195599 A JP2018195599 A JP 2018195599A JP 2018195599 A JP2018195599 A JP 2018195599A JP 2020064955 A5 JP2020064955 A5 JP 2020064955A5
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JP
Japan
Prior art keywords
layer
light emitting
emitting device
semiconductor light
electrode
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Application number
JP2018195599A
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English (en)
Japanese (ja)
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JP2020064955A (ja
JP7262965B2 (ja
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Priority claimed from JP2018195599A external-priority patent/JP7262965B2/ja
Priority to JP2018195599A priority Critical patent/JP7262965B2/ja
Priority to PCT/JP2019/039454 priority patent/WO2020080159A1/ja
Priority to CN201980068568.8A priority patent/CN112868109B/zh
Priority to US17/285,848 priority patent/US12027647B2/en
Priority to EP19874318.9A priority patent/EP3869571A4/en
Publication of JP2020064955A publication Critical patent/JP2020064955A/ja
Publication of JP2020064955A5 publication Critical patent/JP2020064955A5/ja
Publication of JP7262965B2 publication Critical patent/JP7262965B2/ja
Application granted granted Critical
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JP2018195599A 2018-10-17 2018-10-17 半導体発光素子 Active JP7262965B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018195599A JP7262965B2 (ja) 2018-10-17 2018-10-17 半導体発光素子
EP19874318.9A EP3869571A4 (en) 2018-10-17 2019-10-07 Semiconductor light-emitting element
CN201980068568.8A CN112868109B (zh) 2018-10-17 2019-10-07 半导体发光元件
US17/285,848 US12027647B2 (en) 2018-10-17 2019-10-07 Semiconductor light-emitting element
PCT/JP2019/039454 WO2020080159A1 (ja) 2018-10-17 2019-10-07 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018195599A JP7262965B2 (ja) 2018-10-17 2018-10-17 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2020064955A JP2020064955A (ja) 2020-04-23
JP2020064955A5 true JP2020064955A5 (enExample) 2021-10-28
JP7262965B2 JP7262965B2 (ja) 2023-04-24

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ID=70283903

Family Applications (1)

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JP2018195599A Active JP7262965B2 (ja) 2018-10-17 2018-10-17 半導体発光素子

Country Status (5)

Country Link
US (1) US12027647B2 (enExample)
EP (1) EP3869571A4 (enExample)
JP (1) JP7262965B2 (enExample)
CN (1) CN112868109B (enExample)
WO (1) WO2020080159A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111628059B (zh) * 2020-04-28 2021-03-23 北京大学 AlGaN基深紫外发光二极管器件及其制备方法
JP6867536B1 (ja) 2020-07-07 2021-04-28 日機装株式会社 半導体発光装置および半導体発光装置の製造方法
JP2022120619A (ja) 2021-02-05 2022-08-18 豊田合成株式会社 発光素子
JP7646147B2 (ja) * 2021-03-11 2025-03-17 旭化成株式会社 レーザダイオード
JP7291357B1 (ja) * 2022-02-24 2023-06-15 国立研究開発法人理化学研究所 紫外発光素子およびそれを備える電気機器
JP2023127193A (ja) * 2022-03-01 2023-09-13 旭化成株式会社 紫外線発光素子
CN115763666A (zh) * 2022-11-17 2023-03-07 马鞍山杰生半导体有限公司 一种紫外发光二极管芯片
JP2025112182A (ja) * 2024-01-18 2025-07-31 スタンレー電気株式会社 紫外半導体発光素子及びその製造方法
CN117637953A (zh) * 2024-01-25 2024-03-01 江西兆驰半导体有限公司 一种发光二极管外延片及其制备方法、led芯片

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4207781B2 (ja) * 2002-01-28 2009-01-14 日亜化学工業株式会社 支持基板を有する窒化物半導体素子及びその製造方法
JP4572597B2 (ja) * 2003-06-20 2010-11-04 日亜化学工業株式会社 窒化物半導体素子
JP2004266287A (ja) * 2004-04-06 2004-09-24 Showa Denko Kk 半導体素子
KR102005236B1 (ko) 2012-07-05 2019-07-31 삼성전자주식회사 반사 전극 형성을 위한 콘택층을 포함하는 반도체 발광 소자
US9401452B2 (en) * 2012-09-14 2016-07-26 Palo Alto Research Center Incorporated P-side layers for short wavelength light emitters
JP2014086533A (ja) * 2012-10-23 2014-05-12 Showa Denko Kk 発光ダイオードおよびその製造方法
CN103545405B (zh) * 2013-11-11 2016-03-30 天津三安光电有限公司 氮化物发光二极管
TW201545372A (zh) * 2014-05-30 2015-12-01 Mitsubishi Chem Corp 磊晶晶圓、半導體發光元件、發光裝置及磊晶晶圓之製造方法
CN105895757A (zh) * 2016-06-13 2016-08-24 湘能华磊光电股份有限公司 Led外延接触层生长方法
US10340415B2 (en) 2016-09-01 2019-07-02 Lg Innotek Co., Ltd. Semiconductor device and semiconductor device package including the same
CN110462851B (zh) 2017-03-27 2022-07-19 同和电子科技有限公司 Iii族氮化物半导体发光元件及其制造方法
US20180323338A1 (en) * 2017-05-04 2018-11-08 X Development Llc Ultraviolet light emitting diode with tunnel junction
US20180331255A1 (en) * 2017-05-12 2018-11-15 X Development Llc Fabrication of ultraviolet light emitting diode with tunnel junction

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