JP7262965B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

Info

Publication number
JP7262965B2
JP7262965B2 JP2018195599A JP2018195599A JP7262965B2 JP 7262965 B2 JP7262965 B2 JP 7262965B2 JP 2018195599 A JP2018195599 A JP 2018195599A JP 2018195599 A JP2018195599 A JP 2018195599A JP 7262965 B2 JP7262965 B2 JP 7262965B2
Authority
JP
Japan
Prior art keywords
layer
electrode
contact
type semiconductor
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018195599A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020064955A (ja
JP2020064955A5 (enExample
Inventor
俊之 小幡
健宏 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP2018195599A priority Critical patent/JP7262965B2/ja
Priority to EP19874318.9A priority patent/EP3869571A4/en
Priority to US17/285,848 priority patent/US12027647B2/en
Priority to PCT/JP2019/039454 priority patent/WO2020080159A1/ja
Priority to CN201980068568.8A priority patent/CN112868109B/zh
Publication of JP2020064955A publication Critical patent/JP2020064955A/ja
Publication of JP2020064955A5 publication Critical patent/JP2020064955A5/ja
Application granted granted Critical
Publication of JP7262965B2 publication Critical patent/JP7262965B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2018195599A 2018-10-17 2018-10-17 半導体発光素子 Active JP7262965B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018195599A JP7262965B2 (ja) 2018-10-17 2018-10-17 半導体発光素子
EP19874318.9A EP3869571A4 (en) 2018-10-17 2019-10-07 Semiconductor light-emitting element
US17/285,848 US12027647B2 (en) 2018-10-17 2019-10-07 Semiconductor light-emitting element
PCT/JP2019/039454 WO2020080159A1 (ja) 2018-10-17 2019-10-07 半導体発光素子
CN201980068568.8A CN112868109B (zh) 2018-10-17 2019-10-07 半导体发光元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018195599A JP7262965B2 (ja) 2018-10-17 2018-10-17 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2020064955A JP2020064955A (ja) 2020-04-23
JP2020064955A5 JP2020064955A5 (enExample) 2021-10-28
JP7262965B2 true JP7262965B2 (ja) 2023-04-24

Family

ID=70283903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018195599A Active JP7262965B2 (ja) 2018-10-17 2018-10-17 半導体発光素子

Country Status (5)

Country Link
US (1) US12027647B2 (enExample)
EP (1) EP3869571A4 (enExample)
JP (1) JP7262965B2 (enExample)
CN (1) CN112868109B (enExample)
WO (1) WO2020080159A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111628059B (zh) * 2020-04-28 2021-03-23 北京大学 AlGaN基深紫外发光二极管器件及其制备方法
JP6867536B1 (ja) 2020-07-07 2021-04-28 日機装株式会社 半導体発光装置および半導体発光装置の製造方法
JP2022120619A (ja) 2021-02-05 2022-08-18 豊田合成株式会社 発光素子
JP7646147B2 (ja) * 2021-03-11 2025-03-17 旭化成株式会社 レーザダイオード
JP7291357B1 (ja) * 2022-02-24 2023-06-15 国立研究開発法人理化学研究所 紫外発光素子およびそれを備える電気機器
JP2023127193A (ja) * 2022-03-01 2023-09-13 旭化成株式会社 紫外線発光素子
CN115763666A (zh) * 2022-11-17 2023-03-07 马鞍山杰生半导体有限公司 一种紫外发光二极管芯片
JP2025112182A (ja) * 2024-01-18 2025-07-31 スタンレー電気株式会社 紫外半導体発光素子及びその製造方法
CN117637953A (zh) * 2024-01-25 2024-03-01 江西兆驰半导体有限公司 一种发光二极管外延片及其制备方法、led芯片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004266287A (ja) 2004-04-06 2004-09-24 Showa Denko Kk 半導体素子
JP2005033197A (ja) 2003-06-20 2005-02-03 Nichia Chem Ind Ltd 窒化物半導体素子
JP2014086533A (ja) 2012-10-23 2014-05-12 Showa Denko Kk 発光ダイオードおよびその製造方法
JP2016164966A (ja) 2014-05-30 2016-09-08 三菱化学株式会社 窒化物半導体ウエハの製造方法、窒化物半導体ウエハおよび窒化物半導体チップ
WO2018181044A1 (ja) 2017-03-27 2018-10-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4207781B2 (ja) * 2002-01-28 2009-01-14 日亜化学工業株式会社 支持基板を有する窒化物半導体素子及びその製造方法
KR102005236B1 (ko) 2012-07-05 2019-07-31 삼성전자주식회사 반사 전극 형성을 위한 콘택층을 포함하는 반도체 발광 소자
US9401452B2 (en) * 2012-09-14 2016-07-26 Palo Alto Research Center Incorporated P-side layers for short wavelength light emitters
CN103545405B (zh) * 2013-11-11 2016-03-30 天津三安光电有限公司 氮化物发光二极管
CN105895757A (zh) * 2016-06-13 2016-08-24 湘能华磊光电股份有限公司 Led外延接触层生长方法
US10340415B2 (en) * 2016-09-01 2019-07-02 Lg Innotek Co., Ltd. Semiconductor device and semiconductor device package including the same
US20180323338A1 (en) * 2017-05-04 2018-11-08 X Development Llc Ultraviolet light emitting diode with tunnel junction
US20180331255A1 (en) * 2017-05-12 2018-11-15 X Development Llc Fabrication of ultraviolet light emitting diode with tunnel junction

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033197A (ja) 2003-06-20 2005-02-03 Nichia Chem Ind Ltd 窒化物半導体素子
JP2004266287A (ja) 2004-04-06 2004-09-24 Showa Denko Kk 半導体素子
JP2014086533A (ja) 2012-10-23 2014-05-12 Showa Denko Kk 発光ダイオードおよびその製造方法
JP2016164966A (ja) 2014-05-30 2016-09-08 三菱化学株式会社 窒化物半導体ウエハの製造方法、窒化物半導体ウエハおよび窒化物半導体チップ
WO2018181044A1 (ja) 2017-03-27 2018-10-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法

Also Published As

Publication number Publication date
US20210288216A1 (en) 2021-09-16
JP2020064955A (ja) 2020-04-23
CN112868109A (zh) 2021-05-28
CN112868109B (zh) 2025-06-27
US12027647B2 (en) 2024-07-02
WO2020080159A1 (ja) 2020-04-23
EP3869571A4 (en) 2022-07-20
EP3869571A1 (en) 2021-08-25

Similar Documents

Publication Publication Date Title
JP7262965B2 (ja) 半導体発光素子
KR101944893B1 (ko) 양극 알루미늄 산화물 층을 포함하는 헤테로구조체
US20100019223A1 (en) Nitride semiconductor light emitting device
US20130228747A1 (en) Nitride semiconductor light emitting device
KR20080087175A (ko) 반도체 발광 소자
TWI282182B (en) Thin-film LED with an electric current expansion structure
JP2008515180A (ja) テクスチャード発光ダイオード
CN101427431A (zh) 具有隧道结的高效发光二极管
JP6924836B2 (ja) 光電子半導体チップ
JP2007081180A (ja) 半導体発光素子
JP2020064955A5 (enExample)
JP2013089974A (ja) 窒化物半導体発光素子
JP2008171941A (ja) 発光素子
KR20130058406A (ko) 반도체 발광소자
JP2021097148A (ja) 半導体発光素子
KR100545999B1 (ko) 질화물반도체소자
JP5164641B2 (ja) 電流狭窄型半導体発光素子の製造方法
JP7221593B2 (ja) 半導体発光素子
TWI776472B (zh) 半導體發光元件以及半導體發光元件的製造方法
KR101368687B1 (ko) 초격자 구조를 이용한 질화물계 반도체 발광 소자의 제조 방법
JPH1140891A (ja) 窒化ガリウム系半導体発光素子及びその製造方法
CN106025018A (zh) 超晶格结构
KR100601992B1 (ko) 반사전극 및 이를 구비하는 화합물 반도체 발광소자
JP2021184456A (ja) 窒化物半導体レーザダイオード
JP2021534590A (ja) 半導体接触層を有する光電子半導体部品および光電子半導体部品を製造するための方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210916

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210916

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220719

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220908

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230110

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230228

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230328

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230412

R150 Certificate of patent or registration of utility model

Ref document number: 7262965

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150