WO2018181044A1 - Iii族窒化物半導体発光素子およびその製造方法 - Google Patents
Iii族窒化物半導体発光素子およびその製造方法 Download PDFInfo
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Definitions
- the present invention relates to a group III nitride semiconductor light-emitting device and a method for manufacturing the same, and more particularly to a group III nitride semiconductor light-emitting device with improved reliability capable of maintaining a high light emission output and a method for manufacturing the same.
- Group III nitride semiconductors composed of compounds of Al, Ga, In, etc. and N are wide bandgap semiconductors with a direct transition band structure, and have a wide range of applications such as sterilization, water purification, medical treatment, lighting, and high-density optical recording.
- the field is expected material.
- light-emitting elements that use Group III nitride semiconductors in the light-emitting layer can cover the range from deep ultraviolet light to visible light by adjusting the content ratio of Group III elements, and put them into practical use for various light sources. Is underway.
- a general group III nitride semiconductor light emitting device emitting deep ultraviolet light is formed by sequentially forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer through a buffer layer on a substrate such as sapphire or AlN single crystal, And an n-side electrode electrically connected to the n-type semiconductor layer and a p-side electrode electrically connected to the p-type semiconductor layer. Moreover, in order to make ohmic contact on the p-side electrode side of the p-type semiconductor layer, it is common to form a p-type GaN contact layer that can easily increase the hole concentration.
- the light emitting layer generally uses a multiple quantum well (MQW) structure in which barrier layers and well layers made of a group III nitride semiconductor are alternately stacked.
- MQW multiple quantum well
- one of the characteristics required for the group III nitride semiconductor light emitting device is a high external quantum efficiency characteristic.
- the external quantum efficiency is determined by (i) internal quantum efficiency, (ii) electron inflow efficiency, and (iii) light extraction efficiency.
- Patent Document 1 discloses an ultraviolet light emitting diode having an AlGaN mixed crystal p-type contact layer and a reflective electrode showing reflectivity with respect to the emitted light from the light emitting layer, with the substrate side as the light extraction direction. According to Patent Document 1, the transmittance of the p-type contact layer can be increased as the Al composition ratio of the p-type contact layer made of AlGaN is increased for short-wavelength light. Therefore, Patent Document 1 proposes to use a p-type contact layer made of AlGaN having transmittance according to the emission wavelength, instead of the conventional p-type contact layer made of GaN.
- Patent Document 1 even if the hole concentration is reduced by the p-type contact layer made of AlGaN, the light extraction efficiency is greatly improved because the transmittance of the p-type contact layer with respect to the emitted light is increased. The external quantum efficiency is improved.
- Patent Document 1 the higher the transmittance of the p-type contact layer with respect to the emitted light, the better. Therefore, when the present inventors examined this knowledge, in order to increase the transmittance of the p-type contact layer with respect to the center emission wavelength, when the Al composition ratio of the p-type contact layer made of AlGaN is excessive, the following phenomenon occurs. It has been experimentally shown that it can occur. In other words, depending on the relationship between the central emission wavelength of the group III nitride semiconductor light emitting device and the p-type contact layer, it is possible to obtain a group III nitride semiconductor device having a higher light emission output than in the prior art.
- a part of the manufactured group III nitride semiconductor light-emitting device had a phenomenon in which the light emission output suddenly deteriorated as it was halved from the initial light emission output.
- the phenomenon in which the light emission output suddenly deteriorates in this way is referred to as “abandoned” in this specification.
- a sample of a group III nitride semiconductor light emitting device was energized at 20 mA to measure the initial light emission output, then energized at 100 mA for 3 seconds, and then measured again at 20 mA to obtain the initial light emission output.
- it is assumed that a sample in which a decrease in output by more than half has been confirmed is dead.
- Such a sudden death was not confirmed in a conventional group III nitride semiconductor device using a p-type contact layer made of GaN. Further, such a group III nitride semiconductor element that can die suddenly has low reliability even if the light emission output is improved, and cannot be fully put into commercialization.
- an object of the present invention is to provide a Group III nitride semiconductor light-emitting device and a method for manufacturing the same that can increase the light-emission output as compared with the related art and that are reliable.
- the inventor has intensively studied how to solve the above problems.
- the inventor pays attention to the relationship between the central emission wavelength of the group III nitride semiconductor light-emitting device and the p-type contact layer made of AlGaN, and when both satisfy an appropriate relational expression, the above-mentioned sudden death does not occur, Furthermore, it was experimentally clarified that the light emission output, that is, the external quantum efficiency, can be improved as compared with the prior art.
- the light emission output that is, the external quantum efficiency
- the gist of the present invention is as follows. [1] On a substrate, an n-type semiconductor layer, a light emitting layer, a p-type electron block layer, a p-type contact layer made of Al x Ga 1-x N, and a p-side A group III nitride semiconductor light emitting device comprising a reflective electrode in this order,
- the central emission wavelength from the light emitting layer is 270 nm or more and 330 nm or less
- the p-type contact layer is in contact with the p-side reflective electrode, and the p-type contact layer has a thickness of 20 nm to 80 nm;
- (lambda) p is the said center light emission wavelength (nm).
- a group III nitride semiconductor light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type electron blocking layer, a p-type contact layer made of Al x Ga 1-x N, and a p-side reflective electrode in this order on a substrate Because The central emission wavelength from the light emitting layer is 270 nm or more and 310 nm or less, The p-type contact layer is in contact with the p-side reflective electrode, and the p-type contact layer has a thickness of 20 nm to 80 nm; A group III nitride semiconductor light-emitting device, wherein the Al composition ratio x of the p-type contact layer satisfies the following formula (1). However, in said formula (1), (lambda) p is the said center light emission wavelength (nm).
- a method for producing a group III nitride semiconductor light-emitting device comprising: The central emission wavelength from the light emitting layer is 270 nm or more and 330 nm or less,
- the p-type contact layer is formed so that the thickness of the p-type contact layer is 20 nm or more and 80 nm or less, and the Al composition ratio x of the p-type contact layer satisfies the following formula (1).
- a method for producing a group III nitride semiconductor light-emitting device comprising: The central emission wavelength from the light emitting layer is 270 nm or more and 310 nm or less,
- the p-type contact layer is formed so that the thickness of the p-type contact layer is 20 nm or more and 80 nm or less, and the Al composition ratio x of the p-type contact layer satisfies the following formula (1).
- forming a layer comprising forming
- the p-type contact layer forming step includes a first step of crystal growth of a layer made of Al x Ga 1-x N by supplying a group III source gas, a group V source gas, and an Mg source gas, and the first step Immediately after completion of the step, the flow rate of the group III source gas is reduced to 1 ⁇ 4 or less of the flow rate of the first step, and the group V source gas and the Mg source gas are kept for 1 minute or more following the first step. And a second step of supplying for 20 minutes or less.
- the method for producing a group III nitride semiconductor light-emitting device according to [5] or [6].
- FIG. 1 is a schematic cross-sectional view illustrating a group III nitride semiconductor light emitting device 100 according to an embodiment of the present invention.
- FIG. 5 is a schematic cross-sectional view illustrating a method for manufacturing group III nitride semiconductor light emitting device 100 according to an embodiment of the present invention.
- FIG. 3 is a schematic cross-sectional view illustrating a preferred embodiment of a method for manufacturing a group III nitride semiconductor light emitting device according to the present invention. It is a graph which shows the correspondence of the center light emission wavelength of a group III nitride semiconductor light-emitting device in Example 1 of an Example, and Al composition ratio of a p-type contact layer. It is a graph which shows the correspondence of the center light emission wavelength of a group III nitride semiconductor light-emitting device in Example 3 of an Example, and Al composition ratio of a p-type contact layer.
- AlGaN the chemical composition ratio of the group III element (total of Al and Ga) and N is 1: 1, and the group III
- the ratio of the elements Al and Ga shall mean any arbitrary compound. In this case, even if there is no notation about In which is a group III element, it may contain 5% or less of In with respect to Al and Ga as group III elements.
- AlN or “GaN”
- AlN the chemical composition ratio of the group III element (total of Al and Ga) and N
- the ratio of the elements Al and Ga shall mean any arbitrary compound. In this case, even if there is no notation about In which is a group III element, it may contain 5% or less of In with respect to Al and Ga as group III elements.
- AlN or “GaN”
- Ga and Al are not included in the composition ratio, respectively, but by simply indicating “AlGaN”, it is either AlN or GaN. This is not excluded.
- the value of the Al composition ratio can be measured by photoluminescence measurement, X
- a layer that functions electrically as a p-type is referred to as a p-type layer
- a layer that functions as an n-type electrically is referred to as an n-type layer.
- a specific impurity such as Mg or Si is not intentionally added and does not function electrically as p-type or n-type, it is referred to as “i-type” or “undoped”.
- i-type or “undoped”.
- inevitable impurities may be mixed in the manufacturing process.
- the carrier density is small (for example, less than 4 ⁇ 10 16 / cm 3 ), Called.
- the value of impurity concentration such as Mg or Si is determined by SIMS analysis.
- the entire thickness of each layer formed by epitaxial growth can be measured using an optical interference type film thickness measuring instrument.
- the thickness of each layer can be calculated from cross-sectional observation of the growth layer using a transmission electron microscope when the composition of adjacent layers is sufficiently different (for example, when the Al composition ratio is different by 0.01 or more).
- the Al composition ratio is the same or substantially equal (for example, less than 0.01), but the boundary and thickness of layers having different impurity concentrations are the boundary between both layers and the thickness of each layer. This is based on a measurement based on TEM-EDS. Both impurity concentrations can be measured by SIMS analysis. Further, when the thickness of each layer is thin as in the superlattice structure, the thickness can be measured using TEM-EDS.
- a group III nitride semiconductor light emitting device 100 includes an n-type semiconductor layer 30, a light emitting layer 40, a p-type electron blocking layer 60, and Al x Ga 1 on a substrate 10.
- a p-type contact layer 70 made of -xN and a p-side reflective electrode 80 are provided in this order.
- the central emission wavelength from the light emitting layer 40 is not less than 270 nm and not more than 310 nm.
- the p-type contact layer 70 is in contact with the p-side reflective electrode 80, the thickness of the p-type contact layer 70 is 20 nm or more and 80 nm or less, and the Al composition ratio x of the p-type contact layer 70 is expressed by the following formula (1 Is satisfied.
- (lambda) p is the said center light emission wavelength (nm).
- the substrate 10 it is preferable to use a substrate that can transmit light emitted from the light emitting layer 40.
- a substrate that can transmit light emitted from the light emitting layer 40 For example, a sapphire substrate or a single crystal AlN substrate can be used.
- an AlN template substrate obtained by epitaxially growing an undoped AlN layer on the surface of a sapphire substrate may be used.
- the n-type semiconductor layer 30 is provided on the substrate 10.
- the n-type semiconductor layer 30 can be a general n-type layer, and can be made of, for example, AlGaN.
- the n-type semiconductor layer 30 functions as an n-type layer by being doped with an n-type dopant, and specific examples of the n-type dopant include Si, Ge, Sn, S, O, Ti, Zr, and the like. Can do.
- the dopant concentration of the n-type dopant is not particularly limited as long as it is a dopant concentration capable of functioning as n-type, and is, for example, 1.0 ⁇ 10 18 atoms / cm 3 to 1.0 ⁇ 10 20 atoms / cm 3 . be able to.
- the n-type semiconductor layer 30 is made of AlGaN, the Al composition ratio is not particularly limited and can be in a general range. Further, the n-type semiconductor layer 30 can be composed of a single layer or a plurality of layers.
- the light emitting layer 40 is provided on the n-type semiconductor layer 30. Moreover, the light emitting layer 40 in this embodiment is provided so that the center light emission wavelength of light emission by the light emitting layer 40 may be 270 nm or more and 310 nm or less.
- the Al composition ratio a of the light emitting layer 40 is set within the range of 0.29 ⁇ a ⁇ 0.55 so that the central light emission wavelength is 270 nm or more and 310 nm or less. can do.
- the composition of the light emitting layer 40 can be expressed as Al a Ga 1-a N.
- the light emitting layer 40 may have a single layer structure.
- the light emitting layer 40 is a multiple quantum well (MQW) in which a well layer 41 and a barrier layer 42 made of AlGaN having different Al composition ratios are repeatedly formed.
- MQW multiple quantum well
- the Al composition ratio w of the well layer 41 can be set, for example, within the range of 0.29 ⁇ w ⁇ 0.55 so that the center emission wavelength is 270 nm or more and 310 nm or less.
- the Al composition ratio b of the barrier layer 42 is higher than the Al composition ratio w of the well layer 41 (that is, b> w).
- the Al composition ratio b of the barrier layer 42 under the condition of b> w. can be set to 0.40 ⁇ b ⁇ 1.0.
- the number of repetitions of the well layer 41 and the barrier layer 42 is not particularly limited, and can be, for example, 1 to 10 times. It is preferable that both end sides (that is, first and last) in the thickness direction of the light emitting layer 40 are barrier layers, and if the number of repetitions of the well layer 41 and the barrier layer 42 is n, in this case, “n. Layers and barrier layers ”. Further, the thickness of the well layer 41 can be set to 0.5 nm to 5 nm, and the thickness of the barrier layer 42 can be set to 3 nm to 30 nm.
- the p-type electron block layer 60 is provided on the light emitting layer 40.
- the p-type electron blocking layer 60 is used as a layer for blocking electrons and injecting electrons into the light emitting layer 40 (well layer 41 in the case of the MQW structure) to increase the efficiency of electron injection.
- the Al composition ratio z of the p-type electron blocking layer 60 is preferably set to 0.5 ⁇ z ⁇ 0.95. If the Al composition ratio z is 0.5 or more, the p-type electron blocking layer 60 may contain In in an amount of 5% or less with respect to Al and Ga as group III elements.
- the Al composition ratio z satisfies the above conditions, while the Al composition ratio b of the barrier layer 42 and the Al composition of the p-type contact layer 70 are satisfied. It shall be higher than the ratio x. That is, z> b, and z> x.
- the Al composition ratio z of the p-type electron blocking layer 60 and the Al composition ratio b of the barrier layer 42 it is preferable that 0 ⁇ z ⁇ b ⁇ 0.55 is satisfied, and 0.1 ⁇ z ⁇ b It is more preferable to satisfy ⁇ 0.55. By doing so, the p-type electron block layer 60 can reliably increase the efficiency of electron injection into the well layer 41.
- the p-type electron block layer 60 preferably has a single layer structure with a constant AlGaN composition ratio.
- the thickness of the p-type electron blocking layer 60 is not particularly limited, but is preferably 10 nm to 80 nm, for example. If the thickness of the p-type electron blocking layer 60 is within this range, a high light emission output can be obtained with certainty.
- the p-type electron blocking layer 60 is preferably thicker than the barrier layer 42.
- Mg, Zn, Ca, Be, Mn etc. can be illustrated as a p-type dopant doped to the p-type electron block layer 60, and it is common to use Mg.
- the dopant concentration of the p-type electron blocking layer 60 is not particularly limited as long as it is a dopant concentration capable of functioning as a p-type layer. For example, the dopant concentration is 1.0 ⁇ 10 18 atoms / cm 3 to 5.0 ⁇ 10 21 atoms / cm 3 can be used.
- the p-type contact layer 70 is provided on the p-type electron block layer 60.
- the p-type contact layer 70 is a layer for reducing the contact resistance between the p-side reflective electrode 80 and the p-type electron block layer 60 provided thereon.
- the p-type contact layer 70 is in contact with the p-side reflective electrode 80 between the p-type contact layer 70 and the p-side reflective electrode 80 except for impurities that are inevitable in manufacturing. Means that no configuration exists.
- the p-type contact layer 70 is made of Al x Ga 1-x N, and the thickness of the p-type contact layer 70 is 20 nm or more and 80 nm or less.
- the Al composition ratio x of the p-type contact layer 70 satisfies the following formula (1).
- the technical significance that the p-type contact layer 70 satisfies this condition will be described together with details of the p-side reflective electrode 80.
- the lambda p is the center emission wavelength of the group III nitride semiconductor light emitting device 100 (nm). Therefore, 270 ⁇ ⁇ p ⁇ 310.
- the p-side reflective electrode 80 is provided on and in contact with the p-type contact layer 70.
- the p-side reflective electrode 80 uses a metal having a high reflectance (for example, 60% or more) with respect to ultraviolet light having a central emission wavelength of 270 nm to 310 nm so as to reflect light emitted from the light emitting layer 40.
- the metal having such reflectance include rhodium (Rh), platinum (Pt), iridium (Ir), ruthenium (Ru), molybdenum (Mo), tungsten (W), tantalum (Ta), and these An alloy containing at least one of them can be used.
- the reflectivity to ultraviolet light is high, and the p-type contact layer 70 and the p-side reflective electrode 80 can have relatively good ohmic contact. From the viewpoint of reflectivity, among these, it is preferable that the p-side reflective electrode 80 contains rhodium (Rh) alone or in the form of an alloy. Further, the thickness, shape and size of the p-side reflective electrode 80 can be appropriately selected according to the shape and size of the group III nitride semiconductor light emitting device 100. For example, the thickness of the p-side reflective electrode 80 is 30 to 30 mm. It can be 45 nm.
- the p-type contact layer 70 absorbs most of the light emitted from the light-emitting layer 40, and thus light extraction due to reflection by the p-side reflective electrode 80 is performed. The effect is hardly expected. As the center emission wavelength ⁇ p becomes shorter, the absorption by the p-type contact layer 70 becomes more remarkable. On the other hand, when the Al composition ratio x of the p-type contact layer 70 is increased, the p-type contact layer 70 transmits light emitted from the light-emitting layer 40, so that light extraction efficiency is increased due to reflection from the p-side reflective electrode 80. .
- the contact resistance of the p-type contact layer 70 is increased, so that a good ohmic contact between the p-type contact layer 70 and the p-side reflective electrode 80 is achieved.
- the forward voltage (Vf) increases and the incidence of sudden death increases.
- the Al composition ratio x satisfies the range of the above formula (1), although the specific resistance of the p-type contact layer 70 is increased, the transmittance of the p-type contact layer 70 can be increased. Furthermore, the light emission output improvement effect can be enjoyed by regulating the transmission distance of light emission from the light emitting layer 40. Therefore, by making the thickness of the p-type contact layer 70 20 nm or more and 80 nm or less while the Al composition ratio x of the p-type contact layer 70 satisfies the following formula (1), the light emission output can be made higher than before, In addition, a reliable group III nitride semiconductor light-emitting device can be obtained.
- the Al composition ratio x of the p-type contact layer satisfies the following formula (2).
- (lambda) p is the above-mentioned center light emission wavelength (nm).
- the thickness of the p-type contact layer 70 is preferably 30 nm or more, and more preferably 40 nm or more. Furthermore, the thickness of the p-type contact layer 70 is preferably 70 nm or less, and more preferably 60 nm or less.
- the p-type contact layer 70 preferably has a high concentration region 72 having a Mg concentration of 3 ⁇ 10 20 atoms / cm 3 or more on the side in contact with the p-side reflective electrode 80.
- the Mg concentration in the high concentration region 72 is more preferably 5 ⁇ 10 20 atoms / cm 3 or more.
- the forward voltage Vf can be lowered by increasing the hole concentration of the p-type contact layer 70.
- the upper limit of the Mg concentration in the high concentration region 72 can be set to 1 ⁇ 10 21 atoms / cm 3 in this embodiment.
- the Mg concentration of the region 71 on the p-type electron block layer 60 side in the p-type contact layer 70 can be in a general range, and is usually 5 ⁇ 10 19 atoms / cm 3 or more and 3 ⁇ 10 20 atoms / cm. Less than 3 .
- region 72 is an average density
- the thickness of the high concentration region 72 is usually 15 nm or less.
- the present embodiment it is possible to provide a Group III nitride semiconductor light-emitting element that can have a higher light emission output than that of the related art and that is reliable.
- this group III nitride semiconductor light-emitting device light emission is reflected by the p-side reflective electrode, so that the main light extraction direction can be the substrate side or the substrate horizontal direction.
- ⁇ Buffer layer> As shown in FIG. 1, it is also preferable to provide a buffer layer 20 between the substrate 10 and the n-type semiconductor layer 30 for alleviating distortion caused by the difference in lattice constant between the two.
- the buffer layer 20 is preferably made of AlN or AlGaN.
- the AlN layer on the surface portion of the AlN template substrate corresponds to the buffer layer 20, but an AlGaN layer may be formed as the buffer layer 20 on the AlN layer. Good.
- the n-side electrode 90 that can be provided on the exposed surface of the n-type semiconductor layer 30 can be, for example, a metal composite film having a Ti-containing film and an Al-containing film formed on the Ti-containing film.
- the thickness, shape, and size can be appropriately selected depending on the shape and size of the light-emitting element.
- the n-side electrode 90 is not limited to being formed on the exposed surface of the n-type semiconductor layer 30 as shown in FIG. 1, and may be electrically connected to the n-type semiconductor layer.
- a group III nitride semiconductor layer having an Al composition ratio higher than the Al composition ratio z of the p-type electron block layer 60 between the light emitting layer 40 and the p-type electron block layer 60 You may provide the guide layer which consists of. By providing the guide layer, injection of holes into the light emitting layer 40 can be promoted.
- an n-type semiconductor layer 30, a light emitting layer 40, and a p-type electron blocking layer 60 are sequentially formed on a substrate 10 (FIG. 2A). ), (B)), a p-type contact layer forming step (FIG.
- the central emission wavelength from the light emitting layer 40 is set to 270 nm or more and 310 nm or less.
- the thickness of the p-type contact layer is set to 20 nm to 80 nm, and the Al composition ratio x of the p-type contact layer is expressed by the following formula (1).
- the p-type contact layer 70 is formed so as to satisfy the above. However, in said formula (1), (lambda) p is the said center light emission wavelength (nm).
- FIG. 2 showing a flowchart according to a preferred embodiment of the present embodiment, but a description overlapping with the above-described embodiment will be omitted.
- MOCVD metal organic chemical vapor deposition
- MBE Organic Chemical Vapor Deposition
- MBE Molecular Beam Epitaxy
- sputtering a known epitaxial growth technique
- the growth temperature, growth pressure, and growth time for epitaxial growth are generally in accordance with the Al composition ratio and thickness of each layer.
- a carrier gas for epitaxial growth may be supplied into the chamber using hydrogen gas, nitrogen gas, or a mixed gas of both.
- TMA trimethylaluminum
- TMG trimethylgallium
- NH 3 gas can be used as a group V element gas.
- V / III ratio Molar ratio of group V element to group III element calculated based on the growth gas flow rate of group V element gas such as NH 3 gas and group III element gas such as TMA gas
- group V element gas such as NH 3 gas and group III element gas such as TMA gas
- group V / III ratio the general conditions may be used.
- a dopant source gas for p-type dopants, cyclopentadienyl magnesium gas (CP 2 Mg) or the like is used as an Mg source, and for n-type dopants, for example, monosilane gas (SiH 4 ) or Zn source is used as a Si source.
- Zinc chloride gas (ZnCl 2 ) or the like is appropriately selected and supplied into the chamber at a predetermined flow rate.
- a p - type contact layer 70 made of Al x Ga 1-x N is formed on the p-type electron block layer 60.
- the thickness range of the p-type contact layer 70 and the conditions of the Al composition ratio x are as described above.
- the p-type contact layer 70 can also be formed by epitaxial growth using the MOCVD method or the like.
- the p-type contact layer forming step is as follows. The first and second steps are preferably included.
- the p-type contact layer forming step includes a first step of crystal growth of a layer made of Al x Ga 1-x N by supplying a group III source gas, a group V source gas, and a Mg source gas, and the first step Immediately after the completion, the flow rate of the group III source gas is reduced to 1 ⁇ 4 or less of the flow rate of the first step, and the group V source gas and the Mg source gas are added for 1 minute to 20 minutes following the first step. It is preferable to include the 2nd process supplied below. This preferred embodiment will be described with reference to FIG.
- a layer made of Al x Ga 1-x N is crystal-grown by supplying group III source gas, group V source gas and Mg source gas.
- the p-type contact layer 70 made of Al x Ga 1-x N may be epitaxially grown under general conditions.
- the flow rate of the group III source gas is reduced to 1 ⁇ 4 or less of the flow rate of the first step.
- the V group source gas and the Mg source gas are supplied for 1 to 20 minutes following the first step.
- FIG. 3C schematically shows that the high concentration region 72 of Mg was formed after the second step.
- the second step it is more preferable to lower the flow rate of the group III source gas to 1/10 or less of the flow rate of the first step, and it is more preferable to stop the supply of the group III source gas. By doing so, the Mg concentration in the high concentration region 72 can be more reliably increased.
- the p-side reflective electrode 80 is formed immediately above the p-type contact layer 70 as shown in FIGS. 2 (D) and 3 (D).
- the p-side reflective electrode 80 can be formed by sputtering or vacuum deposition.
- the buffer layer 20 may be formed on the surface 10A of the substrate 10 as shown in FIGS. Furthermore, a part of the light emitting layer 40, the p-type electron block layer 60, and the p-type contact layer 70 can be removed by etching or the like, and the n-side electrode 90 can be formed on the exposed n-type semiconductor layer 30.
- the present invention provides a group III nitride semiconductor light emitting device having a central emission wavelength from the light emitting layer of 270 nm to 330 nm. Is also applicable. That is, the group III nitride semiconductor light emitting device 100 according to the second embodiment of the present invention includes an n-type semiconductor layer 30, a light emitting layer 40, a p-type electron block layer 60, and Al x Ga 1-x N on the substrate 10. A p-type contact layer 70 and a p-side reflective electrode 80 are provided in this order.
- the central emission wavelength from the light emitting layer 40 is not less than 270 nm and not more than 330 nm.
- the p-type contact layer 70 is in contact with the p-side reflective electrode 80, the thickness of the p-type contact layer 70 is not less than 20 nm and not more than 80 nm, and the Al composition ratio x of the p-type contact layer 70 is the above formula ( 1) is satisfied.
- the same components as those in FIGS. 1 to 3 are denoted by the same reference numerals, and redundant description is omitted. Therefore, 270 ⁇ ⁇ p ⁇ 330 is applied as the numerical range of ⁇ p in the above-described equations (1) and (2).
- the manufacturing method of the group III nitride semiconductor light emitting device 100 according to the second embodiment in which the central emission wavelength from the light emitting layer is 270 nm or more and 330 nm or less includes the n-type semiconductor layer 30, the light emitting layer 40, and the p type on the substrate 10.
- the central emission wavelength from the light emitting layer 40 is set to 270 nm or more and 330 nm or less.
- the p-type contact layer has a thickness of 20 nm or more and 80 nm or less, and further, the p-type contact layer has an Al composition ratio x satisfying the above formula (1).
- a contact layer 70 is formed.
- the Al composition ratio a of the light emitting layer 40 is 0.17 ⁇ a It may be set from the range of ⁇ 0.55.
- the Al composition ratio w of the well layer 41 is in the range of 0.17 ⁇ w ⁇ 0.55, and b> Under the condition w, the Al composition ratio b of the barrier layer 42 may be set as appropriate within the range of 0.30 ⁇ b ⁇ 1.0.
- the growth temperature of the AlN layer was 1300 ° C.
- the growth pressure in the chamber was 10 Torr
- the growth gas flow rates of ammonia gas and TMA gas were set so that the V / III ratio was 163.
- the film thickness of the AlN layer a total of 25 films including the center in the wafer plane and dispersed at equal intervals using an optical interference type film thickness measuring device (Nanospec M6100A; manufactured by Nanometrics). The thickness was measured.
- the AlN template substrate was introduced into a heat treatment furnace, and the inside of the furnace was put into a nitrogen gas atmosphere, and then the temperature in the furnace was raised to heat-treat the AlN template substrate. At that time, the heating temperature was 1650 ° C., and the heating time was 4 hours.
- a buffer layer having a thickness of 1 ⁇ m made of undoped Al 0.7 Ga 0.3 N was formed by MOCVD.
- a Si-doped n-type semiconductor layer having a thickness of 2 ⁇ m made of Al 0.65 Ga 0.35 N was formed on the buffer layer.
- the Si concentration of the n-type semiconductor layer was 1.0 ⁇ 10 19 atoms / cm 3 .
- n-type semiconductor layer a 3 nm thick well layer made of Al 0.45 Ga 0.55 N and a 7 nm thick barrier layer made of Al 0.64 Ga 0.36 N are alternately formed on the n-type semiconductor layer.
- a light emitting layer was formed by repeating 5 sets. 0.5 in 3.5 sets represents that the first and last of the light emitting layer are the barrier layers.
- a p-type electron blocking layer having a thickness of 40 nm and made of Al 0.68 Ga 0.32 N was formed on the light emitting layer using hydrogen gas as a carrier gas (FIG. 3H).
- CP 2 Mg gas was supplied to the chamber as an Mg source and doped with Mg.
- the Mg concentration of the p-type electron block layer was 5.0 ⁇ 10 18 atoms / cm 3 .
- a p-type contact layer made of Al 0.56 Ga 0.44 N was formed, and the thickness thereof was 50 nm.
- a p-type contact layer is formed until a Mg-doped p-type contact layer is grown by supplying CP 2 Mg gas as a Mg source together with a group III source TMA gas, TMG gas, and group V source ammonia gas.
- First step (FIG. 3B). Thereafter, as shown in FIG. 3C, as the second step, only the supply of the group III source gas is stopped, and only the Mg source gas and the group V source gas are supplied for 10.5 minutes. A high concentration region was formed.
- the Al composition of the p-type contact layer was determined from the emission wavelength (bandgap energy) of the p-type contact layer analyzed by photoluminescence measurement.
- the Mg concentration in the 45 nm portion (region 71) on the p-type electron block layer side is 1 ⁇ 10 20 atoms / cm 3
- the remaining 5 nm portion with high Mg concentration was 3 ⁇ 10 20 atoms / cm 3 .
- Invention Example 2 A Group III nitride semiconductor light-emitting device according to Invention Example 2 was produced in the same manner as Invention Example 1, except that the Al composition ratio of the p-type contact layer in Invention Example 1 was changed to 0.46. Also, as a result of SIMS analysis, in the p-type contact layer of Invention Example 2, the Mg concentration in the 45 nm-thick part (region 71) on the p-type electron blocking layer side is 1 ⁇ 10 20 atoms / cm 3 , The Mg concentration of the remaining 5 nm portion (high concentration region 72) in which the Mg concentration was high by the process was 3 ⁇ 10 20 atoms / cm 3 .
- Invention Example 3 A Group III nitride semiconductor light-emitting device according to Invention Example 3 was produced in the same manner as Invention Example 1, except that the Al composition ratio of the p-type contact layer in Invention Example 1 was changed to 0.41.
- Comparative Example 2 A group III nitride semiconductor light-emitting device according to Invention Example 3 was fabricated in the same manner as Invention Example 1, except that the Al composition ratio of the p-type contact layer in Invention Example 1 was changed to 0.35.
- Comparative Example 3 III according to Comparative Example 3 except that the well layer in Invention Example 2 was changed to Al 0.29 Ga 0.71 N and the barrier layer was changed to Al 0.43 Ga 0.57 N. A group nitride semiconductor light emitting device was fabricated.
- Table 2 below shows the conditions for forming the p-type contact layer in the above Invention Examples 1 to 5, Conventional Examples 1 and 2, and Comparative Examples 1 to 3.
- Example 4 (Comparative Example 4) In Invention Example 1, after forming a p-type contact layer made of Al 0.56 Ga 0.44 N having a thickness of 50 nm, a p-type GaN layer having a thickness of 10 nm is further formed, and the invention example is formed on the surface of the p-type GaN layer. A p-side reflective electrode made of the same Rh as 1 was formed. However, in Comparative Example 4, the second step in forming the p-type contact layer made of Al 0.56 Ga 0.44 N in Invention Example 1 is not performed. Other conditions were the same as in Example 1, and a Group III nitride semiconductor light-emitting device according to Comparative Example 4 was produced.
- Invention Example 6 A Group III nitride semiconductor light-emitting device according to Invention Example 6 was produced in the same manner as in Invention Example 2, except that the second step in forming the p-type contact layer in Invention Example 2 was not performed.
- the thickness of the p-type contact layer was 50 nm.
- the Mg concentration of the p-type contact layer was 1 ⁇ 10 20 atoms / cm 3 .
- Invention Example 8 A group III nitride semiconductor light-emitting device according to Invention Example 8 was produced in the same manner as in Invention Example 7, except that the Al composition x of the p-type contact layer was changed to 0.11. Note that the Al composition 0.11 of the p-type contact layer is the lower limit in Equation 1.
- the light emission output is higher than the conventional light output if the Al composition ratio x of the p-type contact layer is within the range of the formula (1) even when the central emission wavelength ⁇ p is 330 nm. It was confirmed that a reliable light-emitting element that can be performed and does not die is obtained.
- the expression (1) is applicable not only when the central emission wavelength ⁇ p is 270 nm or more and 310 nm or less but also when the center emission wavelength ⁇ p is 270 nm or more and 330 nm or less. .
- the light emission output can be made higher than before and a reliable group III nitride semiconductor light-emitting device and a method for manufacturing the same can be provided, it is useful.
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Abstract
Description
[1]基板上に、n型半導体層、発光層、p型電子ブロック層、AlxGa1-xNよりなるp型コンタクト層およびp側反射電極をこの順に備えるIII族窒化物半導体発光素子であって、
前記発光層からの中心発光波長は270nm以上330nm以下であり、
前記p型コンタクト層は前記p側反射電極と接し、かつ、前記p型コンタクト層の厚さが20nm以上80nm以下であり、
前記p型コンタクト層のAl組成比xが下記式(1)を満たすことを特徴とするIII族窒化物半導体発光素子。
前記発光層からの中心発光波長は270nm以上310nm以下であり、
前記p型コンタクト層は前記p側反射電極と接し、かつ、前記p型コンタクト層の厚さが20nm以上80nm以下であり、
前記p型コンタクト層のAl組成比xが下記式(1)を満たすことを特徴とするIII族窒化物半導体発光素子。
前記p型電子ブロック層上にAlxGa1-xNよりなるp型コンタクト層を形成するp型コンタクト層形成工程と、
前記p型コンタクト層の直上にp側反射電極を形成する工程と、
を含むIII族窒化物半導体発光素子の製造方法であって、
前記発光層からの中心発光波長を270nm以上330nm以下とし、
前記p型コンタクト層形成工程において、前記p型コンタクト層の厚さを20nm以上80nm以下とし、さらに、前記p型コンタクト層のAl組成比xが下記式(1)を満たすよう、前記p型コンタクト層を形成することを特徴とするIII族窒化物半導体発光素子の製造方法。
前記p型電子ブロック層上にAlxGa1-xNよりなるp型コンタクト層を形成するp型コンタクト層形成工程と、
前記p型コンタクト層の直上にp側反射電極を形成する工程と、
を含むIII族窒化物半導体発光素子の製造方法であって、
前記発光層からの中心発光波長を270nm以上310nm以下とし、
前記p型コンタクト層形成工程において、前記p型コンタクト層の厚さを20nm以上80nm以下とし、さらに、前記p型コンタクト層のAl組成比xが下記式(1)を満たすよう、前記p型コンタクト層を形成することを特徴とするIII族窒化物半導体発光素子の製造方法。
(実施形態:III族窒化物半導体発光素子100)
図1に示すように、本発明の一実施形態に従うIII族窒化物半導体発光素子100は、基板10上に、n型半導体層30、発光層40、p型電子ブロック層60、AlxGa1-xNよりなるp型コンタクト層70およびp側反射電極80をこの順に備える。そして、発光層40からの中心発光波長は270nm以上310nm以下である。さらに、p型コンタクト層70は、p側反射電極80と接し、かつ、p型コンタクト層70の厚さが20nm以上80nm以下であり、p型コンタクト層70のAl組成比xが下記式(1)を満たす。
基板10としては、発光層40による発光を透過することのできる基板を用いることが好ましく、例えばサファイア基板または単結晶AlN基板などを用いることができる。また、基板10として、サファイア基板の表面にアンドープのAlN層をエピタキシャル成長させたAlNテンプレート基板を用いてもよい。
n型半導体層30は基板10上に設けられる。n型半導体層30は、一般的なn型層とすることができ、例えばAlGaNよりなることができる。n型半導体層30には、n型のドーパントがドープされることでn型層として機能し、n型ドーパントの具体例として、Si,Ge,Sn,S,O,Ti,Zr等を挙げることができる。n型ドーパントのドーパント濃度は、n型として機能することのできるドーパント濃度であれば特に限定されず、例えば1.0×1018atoms/cm3~1.0×1020atoms/cm3とすることができる。また、n型半導体層30がAlGaNよりなる場合、そのAl組成比は、特に制限はなく、一般的な範囲とすることができる。また、n型半導体層30を単層または複数層から構成することもできる。
発光層40はn型半導体層30上に設けられる。また、本実施形態における発光層40は、当該発光層40による発光の中心発光波長が270nm以上310nm以下となるように設けられる。発光層40をAlGaNの単層構造により形成する場合、中心発光波長が270nm以上310nm以下となるよう、発光層40のAl組成比aを、0.29≦a≦0.55の範囲内から設定することができる。この場合、発光層40の組成はAlaGa1-aNと表すことができる。
p型電子ブロック層60は、発光層40上に設けられる。p型電子ブロック層60は電子を堰止めし、電子を発光層40(MQW構造の場合には井戸層41)内に注入して、電子の注入効率を高めるための層として用いられる。この目的のため、p型電子ブロック層60のAl組成比zを、0.5≦z≦0.95とすることが好ましい。なお、Al組成比zが0.5以上であれば、p型電子ブロック層60はIII族元素としてのAlとGaに対して5%以内の量のInを含んでいてもよい。ここで、発光層40が前述の障壁層42を有する多重量子構造である場合、Al組成比zは上記条件を満足しつつ、障壁層42のAl組成比bおよびp型コンタクト層70のAl組成比xよりも高くするものとする。すなわち、z>bであり、さらに、z>xである。ここで、p型電子ブロック層60のAl組成比zおよび障壁層42のAl組成比bの両者に関し、0<z-b≦0.55を満足することが好ましく、0.1≦z-b≦0.55を満足することがより好ましい。こうすることで、p型電子ブロック層60が井戸層41への電子の注入効率を確実に高めることができる。なお、p型電子ブロック層60は、AlGaN組成比が一定の単一層構造とすることが好ましい。
p型コンタクト層70は、p型電子ブロック層60上に設けられる。p型コンタクト層70は、この上に設けられるp側反射電極80とp型電子ブロック層60との間の接触抵抗を低減するための層である。なお、本明細書において、p型コンタクト層70がp側反射電極80と接するとは、p型コンタクト層70、p側反射電極80との間に、製造上不可避的な不純物以外の所期の構成が存在しないことを意味する。
p側反射電極80は、p型コンタクト層70上に接して設けられる。p側反射電極80は、発光層40からの発光を反射するよう、中心発光波長が270nm以上310nm以下の紫外光に対して高い反射率(例えば60%以上)を有する金属を用いる。このような反射率を有する金属として、例えば、ロジウム(Rh)、白金(Pt)、イリジウム(Ir)、ルテニウム(Ru)、モリブデン(Mo)、タングステン(W)、タンタル(Ta)、およびこれらのいずれかを少なくとも含有する合金を用いることができる。これらの金属または合金であれば紫外光への反射率が高く、また、p型コンタクト層70と、p側反射電極80とで比較的良好なオーミック接触を取ることもできる。なお、反射率の観点では、これらの中でも、p側反射電極80がロジウム(Rh)を単体または合金の形態で含むことが好ましい。また、p側反射電極80の厚さ、形状およびサイズは、III族窒化物半導体発光素子100の形状およびサイズに応じて適宜選択することができ、例えばp側反射電極80の厚さを30~45nmとすることができる。
図1に示すように、基板10と、n型半導体層30との間に、両者の格子定数の差に起因する歪みを緩和するためのバッファ層20を設けることも好ましい。バッファ層20は、AlNまたはAlGaNよりなることが好ましい。なお、基板10として前述のAlNテンプレート基板を用いる場合、AlNテンプレート基板の表面部のAlN層がバッファ層20に相当するが、当該AlN層上に、さらにバッファ層20としてAlGaN層を形成してもよい。
また、n型半導体層30の露出面上に設けられ得るn側電極90は、例えばTi含有膜およびこのTi含有膜上に形成されたAl含有膜を有する金属複合膜とすることができ、その厚さ、形状およびサイズは、発光素子の形状およびサイズに応じて適宜選択することができる。n側電極90は、図1に示すような、n型半導体層30の露出面上への形成に限定されず、n型半導体層と電気的に接続していればよい。
なお、図1には図示しないが、発光層40と、p型電子ブロック層60との間に、p型電子ブロック層60のAl組成比zよりもAl組成比の高いIII族窒化物半導体層からなるガイド層を設けてもよい。ガイド層を設けることで、発光層40への正孔の注入を促進することができる。
次に、上述したIII族窒化物半導体発光素子100の製造方法の一実施形態を、図2を用いて説明する。本発明に従うIII族窒化物半導体発光素子100の製造方法の一実施形態は、基板10上にn型半導体層30、発光層40およびp型電子ブロック層60を順次形成する工程(図2(A),(B))と、p型電子ブロック層60上にAlxGa1-xNよりなるp型コンタクト層70を形成するp型コンタクト層形成工程(図2(C))と、p型コンタクト層70の直上にp側反射電極80を形成する工程(図2(D))と、を含む。また、発光層40からの中心発光波長を270nm以上310nm以下とする。そして、図2(C)に示すp型コンタクト層形成工程において、前記p型コンタクト層の厚さを20nm以上80nm以下とし、さらに、前記p型コンタクト層のAl組成比xが下記式(1)を満たすよう、p型コンタクト層70を形成する。
上述の第1実施形態における発光層40からの中心発光波長は270nm以上310nm以下であったものの、本発明は、発光層からの中心発光波長が270nm以上330nm以下のIII族窒化物半導体発光素子にも適用可能である。すなわち、本発明の第2実施形態に従うIII族窒化物半導体発光素子100は、基板10上に、n型半導体層30、発光層40、p型電子ブロック層60、AlxGa1-xNよりなるp型コンタクト層70およびp側反射電極80をこの順に備える。そして、発光層40からの中心発光波長は270nm以上330nm以下である。さらに、p型コンタクト層70は、p側反射電極80と接し、かつ、p型コンタクト層70の厚さが20nm以上80nm以下であり、p型コンタクト層70のAl組成比xが前述の式(1)を満たす。図1~図3と重複する構成については、同一の符号を用い、重複する説明を省略する。したがって、前述の式(1),(2)におけるλpの数値範囲として、270≦λp≦330が適用される。
(発明例1)
以下、実施例を用いて本発明をさらに詳細に説明するが、本発明は以下の実施例に何ら限定されるものではない。図2に示したフローチャートに従って、発明例1に係るIII族窒化物半導体発光素子を作製した。まず、サファイア基板(直径2インチ、厚さ:430μm、面方位:(0001))を用意した。次いで、MOCVD法により、上記サファイア基板上に中心膜厚0.60μm(平均膜厚0.61μm)のAlN層を成長させ、AlNテンプレート基板とした。その際、AlN層の成長温度は1300℃、チャンバ内の成長圧力は10Torrであり、V/III比が163となるようにアンモニアガスとTMAガスの成長ガス流量を設定した。なお、AlN層の膜厚については、光干渉式膜厚測定機(ナノスペックM6100A;ナノメトリックス社製)を用いて、ウェーハ面内の中心を含む、等間隔に分散させた計25箇所の膜厚を測定した。
発明例1におけるp型コンタクト層のAl組成比を0.46に変えた以外は、発明例1と同様にして、発明例2に係るIII族窒化物半導体発光素子を作製した。また、SIMS分析の結果、発明例2のp型コンタクト層においても、p型電子ブロック層側の厚さ45nm部分(領域71)のMg濃度は1×1020atoms/cm3であり、第2工程によりMgを高濃度とした残り5nm部分(高濃度領域72)のMg濃度は3×1020atom/cm3であった
発明例1におけるp型コンタクト層のAl組成比を0.41に変えた以外は、発明例1と同様にして、発明例3に係るIII族窒化物半導体発光素子を作製した
発明例1におけるp型コンタクト層のAl組成比を0(すなわち、GaN)に変え、さらに厚さを150nmに変えた以外は、発明例1と同様にして、従来例1に係るIII族窒化物半導体発光素子を作製した
発明例1におけるp型コンタクト層のAl組成比を0.62に変えた以外は、発明例1と同様にして、発明例3に係るIII族窒化物半導体発光素子を作製した
発明例1におけるp型コンタクト層のAl組成比を0.35に変えた以外は、発明例1と同様にして、発明例3に係るIII族窒化物半導体発光素子を作製した
発明例2における井戸層をAl0.29Ga0.71Nに、障壁層をAl0.43Ga0.57Nに変えた以外は、発明例2と同様にして、比較例3に係るIII族窒化物半導体発光素子を作製した
比較例3におけるp型コンタクト層のAl組成比を0.39に変えた以外は、比較例3と同様にして、発明例4に係るIII族窒化物半導体発光素子を作製した
比較例3におけるp型コンタクト層のAl組成比を0.23に変えた以外は、比較例3と同様にして、発明例5に係るIII族窒化物半導体発光素子を作製した
比較例3におけるp型コンタクト層のAl組成比を0に変えた以外は、比較例3と同様にして、従来例2に係るIII族窒化物半導体発光素子を作製した。
発明例1~3、従来例1および比較例1~2から得られた半導体発光素子に定電流電圧電源を用いて20mAの電流を流したときの順方向電圧Vfおよび積分球による発光出力Poを測定し、それぞれ3個の試料の測定結果の平均値を求めた。発明例1~5、従来例1,2および比較例1~3について、結果を表2に併せて示す。なお、光ファイバ分光器によって発明例1~3、従来例1および比較例1~2の中心発光波長を測定したところ、いずれも280nmであった。また、発明例4,5、従来例2および比較例3の中心発光波長を測定したところ、いずれも310nmであった。
各発明例、従来例および比較例のサンプルに対して、上記評価1と同様にまず20mAで通電して発光出力を測り、次いで100mAで3秒間通電した後、再び20mAで通電して発光出力を測り、初期の発光出力に対する発光出力の変化を測定した。100mAで3秒間通電した後の発光出力が初期の発光出力の半分以下にまで下がったもの、すなわち頓死が発生するサンプル数を確認した。頓死の発生率の結果を表2に併せて示す。また、III族窒化物半導体発光素子の中心発光波長λpとp型コンタクト層のAl組成比xとの対応関係を示すグラフを図4に示す。図4のグラフ中、p型コンタクト層のAl組成比が実線で囲まれた領域内にあれば、頓死が発生しないことが確認された。
(比較例4)
発明例1において、厚さ50nmのAl0.56Ga0.44Nからなるp型コンタクト層を形成したのち、さらに厚さ10nmのp型GaN層を形成し、p型GaN層表面に発明例1と同じRhからなるp側反射電極を形成した。ただし、比較例4では発明例1のAl0.56Ga0.44Nからなるp型コンタクト層の形成における第2工程は行っていない。その他の条件は、発明例1と同様にして、比較例4に係るIII族窒化物半導体発光素子を作製した
発明例2において、p型コンタクト層の形成における第2工程を行わなかった以外は、発明例2と同様にして、発明例6に係るIII族窒化物半導体発光素子を作製した。p型コンタクト層の厚さは50nmであり、SIMS分析の結果、p型コンタクト層のMg濃度は1×1020atoms/cm3であった。
比較例4、発明例6から得られた半導体発光素子に定電流電圧電源を用いて、実験例1と同様にして順方向電圧Vfおよび積分球による発光出力Poを測定した。また、頓死の発生状況も、実験例1と同様にして確認した。実験例1の発明例1,2および従来例1と併せて、結果を表3に示す。
(発明例7)
実験例1の発明例1における表1に記載の各層の層構造を、中心発光波長が330nmとなるよう、下記表4のとおりに変更した以外は、発明例1と同様にして発明例7に係るIII族窒化物半導体発光素子を作製した。なお、p型コンタクト層のAl組成0.27は、式(1)における上限値に該当する。
p型コンタクト層のAl組成xを0.11とした以外は、発明例7と同様にして発明例8に係るIII族窒化物半導体発光素子を作製した。なお、p型コンタクト層のAl組成0.11は、式1における下限値である。
p型コンタクト層のAl組成xを0とした以外は、発明例7と同様にして従来例3に係るIII族窒化物半導体発光素子を作製した。
発明例7、8および従来例3から得られた半導体発光素子のそれぞれに対し、実験例1における評価1と同様にして積分球による発光出力Poを測定した。また、頓死の発生状況についても、実験例1における評価2と同様にして確認した。下記の表5にそれらの結果を示す。また、前述の図4により示した結果と併せて、発明例7、8および従来例3の中心発光波長λpとp型コンタクト層のAl組成比xとの対応関係を図5のグラフに示す。
10A 基板の主面
20 バッファ層
30 n型半導体層
40 発光層
41 井戸層
42 障壁層
60 p型電子ブロック層
70 p型コンタクト層
71 p型電子ブロック層側の領域
72 p側反射電極と接する側の高濃度領域
80 n側電極
90 p側反射電極
100 III族窒化物半導体発光素子
Claims (7)
- 前記p型コンタクト層は、前記p側反射電極と接する側にMg濃度が3×1020atoms/cm3以上の高濃度領域を有する、請求項1または2に記載のIII族窒化物半導体発光素子。
- 基板上にn型半導体層、発光層およびp型電子ブロック層を順次形成する工程と、
前記p型電子ブロック層上にAlxGa1-xNよりなるp型コンタクト層を形成するp型コンタクト層形成工程と、
前記p型コンタクト層の直上にp側反射電極を形成する工程と、
を含むIII族窒化物半導体発光素子の製造方法であって、
前記発光層からの中心発光波長を270nm以上330nm以下とし、
前記p型コンタクト層形成工程において、前記p型コンタクト層の厚さを20nm以上80nm以下とし、さらに、前記p型コンタクト層のAl組成比xが下記式(1)を満たすよう、前記p型コンタクト層を形成することを特徴とするIII族窒化物半導体発光素子の製造方法。
- 基板上にn型半導体層、発光層およびp型電子ブロック層を順次形成する工程と、
前記p型電子ブロック層上にAlxGa1-xNよりなるp型コンタクト層を形成するp型コンタクト層形成工程と、
前記p型コンタクト層の直上にp側反射電極を形成する工程と、
を含むIII族窒化物半導体発光素子の製造方法であって、
前記発光層からの中心発光波長を270nm以上310nm以下とし、
前記p型コンタクト層形成工程において、前記p型コンタクト層の厚さを20nm以上80nm以下とし、さらに、前記p型コンタクト層のAl組成比xが下記式(1)を満たすよう、前記p型コンタクト層を形成することを特徴とするIII族窒化物半導体発光素子の製造方法。
- 前記p型コンタクト層形成工程は、III族原料ガス、V族原料ガスおよびMg原料ガスの供給によりAlxGa1-xNよりなる層を結晶成長させる第1工程と、該第1工程の終了直後に、前記III族原料ガスの流量を前記第1工程の流量の1/4以下に下げると共に、前記第第1工程に引き続き前記V族原料ガスおよび前記Mg原料ガスを1分以上20分以下供給する第2工程とを含む、請求項5または6に記載のIII族窒化物半導体発光素子の製造方法。
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JPWO2018181044A1 (ja) | 2019-11-07 |
TWI742265B (zh) | 2021-10-11 |
KR102491456B1 (ko) | 2023-01-25 |
TW201841385A (zh) | 2018-11-16 |
US20200287087A1 (en) | 2020-09-10 |
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