JP2020064955A - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP2020064955A JP2020064955A JP2018195599A JP2018195599A JP2020064955A JP 2020064955 A JP2020064955 A JP 2020064955A JP 2018195599 A JP2018195599 A JP 2018195599A JP 2018195599 A JP2018195599 A JP 2018195599A JP 2020064955 A JP2020064955 A JP 2020064955A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- type semiconductor
- contact
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 168
- 239000000203 mixture Substances 0.000 claims abstract description 110
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 55
- 230000007423 decrease Effects 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 33
- 238000005253 cladding Methods 0.000 claims description 22
- 239000002019 doping agent Substances 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 13
- 238000002310 reflectometry Methods 0.000 claims description 10
- 230000009467 reduction Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 458
- 238000010586 diagram Methods 0.000 description 14
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000004913 activation Effects 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
12 n型半導体層
13 活性層
15、21、31 p型半導体層
15B、21A、31A コンタクト層
Claims (8)
- AlGaN又はAlInGaNの組成を有するn型半導体層と、
前記n型半導体層上に形成され、AlGaN系半導体又はAlInGaN系半導体からなる活性層と、
前記活性層上に形成され、AlN、AlGaN又はAlInGaNの組成を有するp型半導体層と、
前記p型半導体層上に形成されたp電極と、を有し、
前記p型半導体層は、前記p電極上に形成され、前記p電極との界面に向かってバンドギャップが小さくなるAlGaN層又はAlInGaN層からなるコンタクト層を有し、
前記コンタクト層は、前記p電極に接触し、トンネル接合によって前記p電極に接続されたトンネルコンタクト層を有することを特徴とする半導体発光素子。 - 前記p電極は、前記活性層から放出された光に対して反射性を有することを特徴とする請求項1に記載の半導体発光素子。
- 前記活性層は、井戸層及び前記井戸層よりも大きなバンドギャップの障壁層を含む量子井戸構造を有し、
前記p型半導体層は、前記井戸層よりも大きなバンドギャップを有することを特徴とする請求項1又は2に記載の半導体発光素子。 - 前記n型半導体層、前記活性層及び前記p型半導体層は、単結晶のAlN基板上にエピタキシャル成長された半導体層であることを特徴とする請求項1又は2に記載の半導体発光素子。
- 前記p型半導体層は、前記コンタクト層よりも前記活性層側に形成されたp型クラッド層を有し、
前記コンタクト層は、前記p電極との界面近傍において前記p型クラッド層よりも高いドーパント濃度を有することを特徴とする請求項1乃至4のいずれか1つに記載の半導体発光素子。 - 前記コンタクト層は、前記p電極との界面に向かってAl組成が小さくなるAlGaN層からなることを特徴とする請求項1乃至5のいずれか1つに記載の半導体発光素子。
- 前記コンタクト層における前記Al組成の減少率は、前記p電極との界面に向かって減少することを特徴とする請求項6に記載の半導体発光素子。
- 前記コンタクト層における前記Al組成の減少率は、前記p電極との界面に向かって増加することを特徴とする請求項6に記載の半導体発光素子。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018195599A JP7262965B2 (ja) | 2018-10-17 | 2018-10-17 | 半導体発光素子 |
US17/285,848 US20210288216A1 (en) | 2018-10-17 | 2019-10-07 | Semiconductor light-emitting element |
EP19874318.9A EP3869571A4 (en) | 2018-10-17 | 2019-10-07 | LIGHT EMITTING SEMICONDUCTOR ELEMENT |
CN201980068568.8A CN112868109A (zh) | 2018-10-17 | 2019-10-07 | 半导体发光元件 |
PCT/JP2019/039454 WO2020080159A1 (ja) | 2018-10-17 | 2019-10-07 | 半導体発光素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018195599A JP7262965B2 (ja) | 2018-10-17 | 2018-10-17 | 半導体発光素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020064955A true JP2020064955A (ja) | 2020-04-23 |
JP2020064955A5 JP2020064955A5 (ja) | 2021-10-28 |
JP7262965B2 JP7262965B2 (ja) | 2023-04-24 |
Family
ID=70283903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018195599A Active JP7262965B2 (ja) | 2018-10-17 | 2018-10-17 | 半導体発光素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20210288216A1 (ja) |
EP (1) | EP3869571A4 (ja) |
JP (1) | JP7262965B2 (ja) |
CN (1) | CN112868109A (ja) |
WO (1) | WO2020080159A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111628059A (zh) * | 2020-04-28 | 2020-09-04 | 北京大学 | AlGaN基深紫外发光二极管器件及其制备方法 |
JP2022014593A (ja) * | 2020-07-07 | 2022-01-20 | 日機装株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7291357B1 (ja) * | 2022-02-24 | 2023-06-15 | 国立研究開発法人理化学研究所 | 紫外発光素子およびそれを備える電気機器 |
CN115763666A (zh) * | 2022-11-17 | 2023-03-07 | 马鞍山杰生半导体有限公司 | 一种紫外发光二极管芯片 |
CN117637953A (zh) * | 2024-01-25 | 2024-03-01 | 江西兆驰半导体有限公司 | 一种发光二极管外延片及其制备方法、led芯片 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004266287A (ja) * | 2004-04-06 | 2004-09-24 | Showa Denko Kk | 半導体素子 |
JP2005033197A (ja) * | 2003-06-20 | 2005-02-03 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2014086533A (ja) * | 2012-10-23 | 2014-05-12 | Showa Denko Kk | 発光ダイオードおよびその製造方法 |
JP2016164966A (ja) * | 2014-05-30 | 2016-09-08 | 三菱化学株式会社 | 窒化物半導体ウエハの製造方法、窒化物半導体ウエハおよび窒化物半導体チップ |
WO2018181044A1 (ja) * | 2017-03-27 | 2018-10-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003065464A1 (fr) * | 2002-01-28 | 2003-08-07 | Nichia Corporation | Dispositif a semi-conducteur a base de nitrure comprenant un substrat de support, et son procede de realisation |
KR102005236B1 (ko) * | 2012-07-05 | 2019-07-31 | 삼성전자주식회사 | 반사 전극 형성을 위한 콘택층을 포함하는 반도체 발광 소자 |
US9401452B2 (en) * | 2012-09-14 | 2016-07-26 | Palo Alto Research Center Incorporated | P-side layers for short wavelength light emitters |
CN103545405B (zh) * | 2013-11-11 | 2016-03-30 | 天津三安光电有限公司 | 氮化物发光二极管 |
CN105895757A (zh) * | 2016-06-13 | 2016-08-24 | 湘能华磊光电股份有限公司 | Led外延接触层生长方法 |
US10340415B2 (en) * | 2016-09-01 | 2019-07-02 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package including the same |
US20180323338A1 (en) * | 2017-05-04 | 2018-11-08 | X Development Llc | Ultraviolet light emitting diode with tunnel junction |
US20180331255A1 (en) * | 2017-05-12 | 2018-11-15 | X Development Llc | Fabrication of ultraviolet light emitting diode with tunnel junction |
-
2018
- 2018-10-17 JP JP2018195599A patent/JP7262965B2/ja active Active
-
2019
- 2019-10-07 US US17/285,848 patent/US20210288216A1/en active Granted
- 2019-10-07 WO PCT/JP2019/039454 patent/WO2020080159A1/ja unknown
- 2019-10-07 EP EP19874318.9A patent/EP3869571A4/en active Pending
- 2019-10-07 CN CN201980068568.8A patent/CN112868109A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005033197A (ja) * | 2003-06-20 | 2005-02-03 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2004266287A (ja) * | 2004-04-06 | 2004-09-24 | Showa Denko Kk | 半導体素子 |
JP2014086533A (ja) * | 2012-10-23 | 2014-05-12 | Showa Denko Kk | 発光ダイオードおよびその製造方法 |
JP2016164966A (ja) * | 2014-05-30 | 2016-09-08 | 三菱化学株式会社 | 窒化物半導体ウエハの製造方法、窒化物半導体ウエハおよび窒化物半導体チップ |
WO2018181044A1 (ja) * | 2017-03-27 | 2018-10-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111628059A (zh) * | 2020-04-28 | 2020-09-04 | 北京大学 | AlGaN基深紫外发光二极管器件及其制备方法 |
CN111628059B (zh) * | 2020-04-28 | 2021-03-23 | 北京大学 | AlGaN基深紫外发光二极管器件及其制备方法 |
JP2022014593A (ja) * | 2020-07-07 | 2022-01-20 | 日機装株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
TWI795820B (zh) * | 2020-07-07 | 2023-03-11 | 日商日機裝股份有限公司 | 半導體發光裝置以及半導體發光裝置的製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3869571A4 (en) | 2022-07-20 |
JP7262965B2 (ja) | 2023-04-24 |
WO2020080159A1 (ja) | 2020-04-23 |
US20210288216A1 (en) | 2021-09-16 |
CN112868109A (zh) | 2021-05-28 |
EP3869571A1 (en) | 2021-08-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2020080159A1 (ja) | 半導体発光素子 | |
US9166098B2 (en) | Nitride semiconductor light emitting device | |
JP4904261B2 (ja) | 電流阻止構造を有する発光デバイスおよび電流阻止構造を有する発光デバイスを作製する方法 | |
JP3863177B2 (ja) | 窒化ガリウム系発光装置 | |
TWI455353B (zh) | 深紫外線發光二極體 | |
KR100947676B1 (ko) | 3족 질화물 반도체 발광소자 | |
KR101184862B1 (ko) | 질화물 반도체 발광 소자 및 질화물 반도체 발광 소자의 제조 방법 | |
US20130228747A1 (en) | Nitride semiconductor light emitting device | |
JP2008047871A (ja) | 半導体発光ダイオード | |
JP2005116794A (ja) | 窒化物半導体発光素子 | |
JP5983554B2 (ja) | Iii族窒化物半導体発光素子 | |
JP6924836B2 (ja) | 光電子半導体チップ | |
KR101008588B1 (ko) | 3족 질화물 반도체 발광소자 | |
JP5082444B2 (ja) | 窒化物半導体発光素子 | |
JP2021097148A (ja) | 半導体発光素子 | |
JP4493041B2 (ja) | 窒化物半導体発光素子 | |
KR100601992B1 (ko) | 반사전극 및 이를 구비하는 화합물 반도체 발광소자 | |
JP7221593B2 (ja) | 半導体発光素子 | |
JP2021184456A (ja) | 窒化物半導体レーザダイオード | |
KR101333332B1 (ko) | 발광 다이오드 및 그 제조 방법 | |
JP2019186262A (ja) | 窒化物半導体発光素子 | |
TWI776472B (zh) | 半導體發光元件以及半導體發光元件的製造方法 | |
JP2014003121A (ja) | 窒化物半導体発光素子 | |
KR20070079139A (ko) | 3족 질화물 반도체 적층체의 제조 방법 및 이를 이용한 3족질화물 반도체 발광소자와 그 제조 방법 | |
JP2005317823A (ja) | 窒化ガリウム系発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210916 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210916 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220719 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220908 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230228 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230328 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230412 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7262965 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |