CN112868109B - 半导体发光元件 - Google Patents

半导体发光元件 Download PDF

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Publication number
CN112868109B
CN112868109B CN201980068568.8A CN201980068568A CN112868109B CN 112868109 B CN112868109 B CN 112868109B CN 201980068568 A CN201980068568 A CN 201980068568A CN 112868109 B CN112868109 B CN 112868109B
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China
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layer
type semiconductor
electrode
contact
composition
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CN201980068568.8A
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Chinese (zh)
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CN112868109A (zh
Inventor
小幡俊之
桥本健宏
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201980068568.8A 2018-10-17 2019-10-07 半导体发光元件 Active CN112868109B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-195599 2018-10-17
JP2018195599A JP7262965B2 (ja) 2018-10-17 2018-10-17 半導体発光素子
PCT/JP2019/039454 WO2020080159A1 (ja) 2018-10-17 2019-10-07 半導体発光素子

Publications (2)

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CN112868109A CN112868109A (zh) 2021-05-28
CN112868109B true CN112868109B (zh) 2025-06-27

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CN201980068568.8A Active CN112868109B (zh) 2018-10-17 2019-10-07 半导体发光元件

Country Status (5)

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US (1) US12027647B2 (enExample)
EP (1) EP3869571A4 (enExample)
JP (1) JP7262965B2 (enExample)
CN (1) CN112868109B (enExample)
WO (1) WO2020080159A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111628059B (zh) * 2020-04-28 2021-03-23 北京大学 AlGaN基深紫外发光二极管器件及其制备方法
JP6867536B1 (ja) 2020-07-07 2021-04-28 日機装株式会社 半導体発光装置および半導体発光装置の製造方法
JP2022120619A (ja) 2021-02-05 2022-08-18 豊田合成株式会社 発光素子
JP7646147B2 (ja) * 2021-03-11 2025-03-17 旭化成株式会社 レーザダイオード
JP7291357B1 (ja) * 2022-02-24 2023-06-15 国立研究開発法人理化学研究所 紫外発光素子およびそれを備える電気機器
JP2023127193A (ja) * 2022-03-01 2023-09-13 旭化成株式会社 紫外線発光素子
CN115763666A (zh) * 2022-11-17 2023-03-07 马鞍山杰生半导体有限公司 一种紫外发光二极管芯片
JP2025112182A (ja) * 2024-01-18 2025-07-31 スタンレー電気株式会社 紫外半導体発光素子及びその製造方法
CN117637953A (zh) * 2024-01-25 2024-03-01 江西兆驰半导体有限公司 一种发光二极管外延片及其制备方法、led芯片

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2005033197A (ja) * 2003-06-20 2005-02-03 Nichia Chem Ind Ltd 窒化物半導体素子
CN107799639A (zh) * 2016-09-01 2018-03-13 Lg伊诺特有限公司 半导体器件及包括其的半导体器件封装

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ATE445233T1 (de) * 2002-01-28 2009-10-15 Nichia Corp Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
JP2004266287A (ja) * 2004-04-06 2004-09-24 Showa Denko Kk 半導体素子
KR102005236B1 (ko) 2012-07-05 2019-07-31 삼성전자주식회사 반사 전극 형성을 위한 콘택층을 포함하는 반도체 발광 소자
US9401452B2 (en) * 2012-09-14 2016-07-26 Palo Alto Research Center Incorporated P-side layers for short wavelength light emitters
JP2014086533A (ja) 2012-10-23 2014-05-12 Showa Denko Kk 発光ダイオードおよびその製造方法
CN103545405B (zh) * 2013-11-11 2016-03-30 天津三安光电有限公司 氮化物发光二极管
TW201545372A (zh) * 2014-05-30 2015-12-01 Mitsubishi Chem Corp 磊晶晶圓、半導體發光元件、發光裝置及磊晶晶圓之製造方法
CN105895757A (zh) * 2016-06-13 2016-08-24 湘能华磊光电股份有限公司 Led外延接触层生长方法
KR102491456B1 (ko) * 2017-03-27 2023-01-25 도와 일렉트로닉스 가부시키가이샤 Iii족 질화물 반도체 발광소자 및 그 제조 방법
US20180323338A1 (en) * 2017-05-04 2018-11-08 X Development Llc Ultraviolet light emitting diode with tunnel junction
US20180331255A1 (en) * 2017-05-12 2018-11-15 X Development Llc Fabrication of ultraviolet light emitting diode with tunnel junction

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033197A (ja) * 2003-06-20 2005-02-03 Nichia Chem Ind Ltd 窒化物半導体素子
CN107799639A (zh) * 2016-09-01 2018-03-13 Lg伊诺特有限公司 半导体器件及包括其的半导体器件封装

Non-Patent Citations (2)

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Title
"Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs";Yuewei Zhang;《APPLIED PHYSICS LETTERS》;参见第1-3页，图2 *
Yuewei Zhang."Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs".《APPLIED PHYSICS LETTERS》.2017,参见第1-3页，图2. *

Also Published As

Publication number Publication date
US12027647B2 (en) 2024-07-02
JP7262965B2 (ja) 2023-04-24
WO2020080159A1 (ja) 2020-04-23
JP2020064955A (ja) 2020-04-23
EP3869571A1 (en) 2021-08-25
US20210288216A1 (en) 2021-09-16
EP3869571A4 (en) 2022-07-20
CN112868109A (zh) 2021-05-28

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