JP2012514329A5 - - Google Patents
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- Publication number
- JP2012514329A5 JP2012514329A5 JP2011543557A JP2011543557A JP2012514329A5 JP 2012514329 A5 JP2012514329 A5 JP 2012514329A5 JP 2011543557 A JP2011543557 A JP 2011543557A JP 2011543557 A JP2011543557 A JP 2011543557A JP 2012514329 A5 JP2012514329 A5 JP 2012514329A5
- Authority
- JP
- Japan
- Prior art keywords
- photoluminescent element
- semiconductor
- semiconductor structure
- wavelength
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 43
- 238000006243 chemical reaction Methods 0.000 claims 7
- 230000005284 excitation Effects 0.000 claims 5
- 239000000463 material Substances 0.000 claims 5
- SIYUNWULVVAZDE-UHFFFAOYSA-N magnesium zinc cadmium(2+) selenium(2-) Chemical compound [Mg++].[Zn++].[Se--].[Se--].[Se--].[Cd++] SIYUNWULVVAZDE-UHFFFAOYSA-N 0.000 claims 2
- NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 claims 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14069708P | 2008-12-24 | 2008-12-24 | |
| US61/140,697 | 2008-12-24 | ||
| PCT/US2009/067489 WO2010074987A2 (en) | 2008-12-24 | 2009-12-10 | Light generating device having double-sided wavelength converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012514329A JP2012514329A (ja) | 2012-06-21 |
| JP2012514329A5 true JP2012514329A5 (enExample) | 2013-01-31 |
Family
ID=42115309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011543557A Withdrawn JP2012514329A (ja) | 2008-12-24 | 2009-12-10 | 両方の側に波長変換器を有する光生成デバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8350462B2 (enExample) |
| EP (1) | EP2380216A2 (enExample) |
| JP (1) | JP2012514329A (enExample) |
| KR (1) | KR20110105842A (enExample) |
| CN (1) | CN102318089A (enExample) |
| TW (1) | TW201029237A (enExample) |
| WO (1) | WO2010074987A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120015337A (ko) | 2009-05-05 | 2012-02-21 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법 |
| JP2012526391A (ja) | 2009-05-05 | 2012-10-25 | スリーエム イノベイティブ プロパティズ カンパニー | インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子 |
| EP2449609A1 (en) | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | Cadmium-free re-emitting semiconductor construction |
| EP2449856A1 (en) | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | White light electroluminescent devices with adjustable color temperature |
| EP2449608A1 (en) | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | Electroluminescent devices with color adjustment based on current crowding |
| WO2011026005A2 (en) * | 2009-08-31 | 2011-03-03 | 3M Innovative Properties Company | Projection and display system |
| WO2012042452A2 (en) * | 2010-09-29 | 2012-04-05 | Koninklijke Philips Electronics N.V. | Wavelength converted light emitting device |
| JP5864367B2 (ja) * | 2011-06-16 | 2016-02-17 | 日東電工株式会社 | 蛍光接着シート、蛍光体層付発光ダイオード素子、発光ダイオード装置およびそれらの製造方法 |
| KR102008349B1 (ko) * | 2013-03-13 | 2019-08-07 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
| JP6129706B2 (ja) * | 2013-09-27 | 2017-05-17 | Ｊｘ金属株式会社 | 化合物半導体素子の製造方法およびエッチング液 |
| FR3019380B1 (fr) * | 2014-04-01 | 2017-09-01 | Centre Nat Rech Scient | Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication |
| CN105679904B (zh) * | 2016-01-29 | 2022-04-01 | 姜全忠 | 光泵浦发光器件及单片集成光泵浦发光器件的制备方法 |
| DE102016220915A1 (de) | 2016-10-25 | 2018-04-26 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
| US10707265B2 (en) * | 2017-05-31 | 2020-07-07 | Iinolux Corporation | Display devices |
| DE102018101089A1 (de) | 2018-01-18 | 2019-07-18 | Osram Opto Semiconductors Gmbh | Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips |
| US10585311B2 (en) * | 2018-02-22 | 2020-03-10 | Vestel Elektronik Sanayi Ve Ticaret A.S. | Display device |
| US10868213B2 (en) * | 2018-06-26 | 2020-12-15 | Lumileds Llc | LED utilizing internal color conversion with light extraction enhancements |
| CN109065572B (zh) * | 2018-07-20 | 2019-11-26 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板及oled显示装置 |
| GB2586580B (en) * | 2019-08-06 | 2022-01-12 | Plessey Semiconductors Ltd | LED array and method of forming a LED array |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1260407A (en) | 1917-03-31 | 1918-03-26 | Raymond Brothers Impact Pulverizer Company | Pulverizing apparatus. |
| US5915193A (en) | 1995-05-18 | 1999-06-22 | Tong; Qin-Yi | Method for the cleaning and direct bonding of solids |
| JP3378465B2 (ja) | 1997-05-16 | 2003-02-17 | 株式会社東芝 | 発光装置 |
| TW480744B (en) | 2000-03-14 | 2002-03-21 | Lumileds Lighting Bv | Light-emitting diode, lighting device and method of manufacturing same |
| US6737801B2 (en) | 2000-06-28 | 2004-05-18 | The Fox Group, Inc. | Integrated color LED chip |
| US6563133B1 (en) | 2000-08-09 | 2003-05-13 | Ziptronix, Inc. | Method of epitaxial-like wafer bonding at low temperature and bonded structure |
| JP2002170989A (ja) | 2000-12-04 | 2002-06-14 | Sharp Corp | 窒化物系化合物半導体発光素子 |
| CA2427559A1 (en) * | 2002-05-15 | 2003-11-15 | Sumitomo Electric Industries, Ltd. | White color light emitting device |
| US6841802B2 (en) * | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
| US20050156510A1 (en) * | 2004-01-21 | 2005-07-21 | Chua Janet B.Y. | Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials |
| US7361938B2 (en) | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
| US7402831B2 (en) | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| WO2007034367A1 (en) * | 2005-09-19 | 2007-03-29 | Koninklijke Philips Electronics N.V. | Variable color light emitting device and method for controlling the same |
| DE102006024165A1 (de) | 2006-05-23 | 2007-11-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips |
| JP4291837B2 (ja) | 2006-08-30 | 2009-07-08 | 株式会社沖データ | 投写型表示装置および画像形成装置 |
| DE102006059612A1 (de) | 2006-12-12 | 2008-06-19 | Forschungsverbund Berlin E.V. | Halbleiterbauelement und Verfahren zu dessen Herstellung |
| KR100856282B1 (ko) | 2007-03-05 | 2008-09-03 | 삼성전기주식회사 | 광자 리사이클링을 이용한 광자결정 발광소자 |
| JP2010525555A (ja) | 2007-03-08 | 2010-07-22 | スリーエム イノベイティブ プロパティズ カンパニー | 発光素子のアレイ |
| US20100283074A1 (en) | 2007-10-08 | 2010-11-11 | Kelley Tommie W | Light emitting diode with bonded semiconductor wavelength converter |
| US7915627B2 (en) * | 2007-10-17 | 2011-03-29 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
| CN101939855B (zh) | 2007-12-10 | 2013-10-30 | 3M创新有限公司 | 半导体发光装置及其制造方法 |
| CN101897038B (zh) | 2007-12-10 | 2012-08-29 | 3M创新有限公司 | 波长转换发光二极管及其制造方法 |
| US8299701B2 (en) * | 2007-12-27 | 2012-10-30 | Ge Lighting Solutions Llc | Lighting device having illumination, backlighting and display applications |
| KR20110019390A (ko) | 2008-06-05 | 2011-02-25 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 접합형 반도체 파장 변환기를 갖는 발광 다이오드 |
| US20090321758A1 (en) * | 2008-06-25 | 2009-12-31 | Wen-Huang Liu | Led with improved external light extraction efficiency |
| KR20110031953A (ko) | 2008-06-26 | 2011-03-29 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 반도체 광 변환 구조체 |
| US8324000B2 (en) | 2008-06-26 | 2012-12-04 | 3M Innovative Properties Company | Method of fabricating light extractor |
-
2009
- 2009-12-10 WO PCT/US2009/067489 patent/WO2010074987A2/en not_active Ceased
- 2009-12-10 EP EP09795844A patent/EP2380216A2/en not_active Withdrawn
- 2009-12-10 US US13/141,638 patent/US8350462B2/en not_active Expired - Fee Related
- 2009-12-10 CN CN200980156984XA patent/CN102318089A/zh active Pending
- 2009-12-10 KR KR1020117017260A patent/KR20110105842A/ko not_active Ceased
- 2009-12-10 JP JP2011543557A patent/JP2012514329A/ja not_active Withdrawn
- 2009-12-23 TW TW098144598A patent/TW201029237A/zh unknown
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