JP2012514329A - 両方の側に波長変換器を有する光生成デバイス - Google Patents

両方の側に波長変換器を有する光生成デバイス Download PDF

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Publication number
JP2012514329A
JP2012514329A JP2011543557A JP2011543557A JP2012514329A JP 2012514329 A JP2012514329 A JP 2012514329A JP 2011543557 A JP2011543557 A JP 2011543557A JP 2011543557 A JP2011543557 A JP 2011543557A JP 2012514329 A JP2012514329 A JP 2012514329A
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photoluminescent element
semiconductor
wavelength
light
photoluminescent
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Japanese (ja)
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JP2012514329A5 (enExample
Inventor
エー．レザーデール キャサリン
ジェイ．アウダーカーク アンドリュー
ダブリュ．ケリー トミー
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2012514329A publication Critical patent/JP2012514329A/ja
Publication of JP2012514329A5 publication Critical patent/JP2012514329A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
JP2011543557A 2008-12-24 2009-12-10 両方の側に波長変換器を有する光生成デバイス Withdrawn JP2012514329A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14069708P 2008-12-24 2008-12-24
US61/140,697 2008-12-24
PCT/US2009/067489 WO2010074987A2 (en) 2008-12-24 2009-12-10 Light generating device having double-sided wavelength converter

Publications (2)

Publication Number Publication Date
JP2012514329A true JP2012514329A (ja) 2012-06-21
JP2012514329A5 JP2012514329A5 (enExample) 2013-01-31

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JP2011543557A Withdrawn JP2012514329A (ja) 2008-12-24 2009-12-10 両方の側に波長変換器を有する光生成デバイス

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US (1) US8350462B2 (enExample)
EP (1) EP2380216A2 (enExample)
JP (1) JP2012514329A (enExample)
KR (1) KR20110105842A (enExample)
CN (1) CN102318089A (enExample)
TW (1) TW201029237A (enExample)
WO (1) WO2010074987A2 (enExample)

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JP2017513225A (ja) * 2014-04-01 2017-05-25 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク 半導体画素、このような画素のマトリクス、このような画素を製造するための半導体構造、およびそれらの製作方法
JP2019534564A (ja) * 2016-10-25 2019-11-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体素子の製造方法およびオプトエレクトロニクス半導体素子
JP2022543821A (ja) * 2019-08-06 2022-10-14 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法

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CN102804411A (zh) 2009-05-05 2012-11-28 3M创新有限公司 利用铟耗尽机理在含铟衬底上生长的半导体器件
CN102473817A (zh) 2009-06-30 2012-05-23 3M创新有限公司 无镉再发光半导体构造
CN102474932B (zh) 2009-06-30 2015-12-16 3M创新有限公司 具有可调节色温的白光电致发光器件
US8304976B2 (en) 2009-06-30 2012-11-06 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
US20120188519A1 (en) * 2009-08-31 2012-07-26 3M Innovative Properties Company Projection and display system
CN106935576A (zh) * 2010-09-29 2017-07-07 皇家飞利浦电子股份有限公司 波长转换的发光器件
JP5864367B2 (ja) * 2011-06-16 2016-02-17 日東電工株式会社 蛍光接着シート、蛍光体層付発光ダイオード素子、発光ダイオード装置およびそれらの製造方法
KR102008349B1 (ko) * 2013-03-13 2019-08-07 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP6129706B2 (ja) * 2013-09-27 2017-05-17 Ｊｘ金属株式会社 化合物半導体素子の製造方法およびエッチング液
CN105679904B (zh) * 2016-01-29 2022-04-01 姜全忠 光泵浦发光器件及单片集成光泵浦发光器件的制备方法
US10707265B2 (en) * 2017-05-31 2020-07-07 Iinolux Corporation Display devices
DE102018101089A1 (de) 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
KR20190101297A (ko) * 2018-02-22 2019-08-30 베스텔 일렉트로닉 사나이 베 티카레트 에이에스 디스플레이 장치
US10868213B2 (en) * 2018-06-26 2020-12-15 Lumileds Llc LED utilizing internal color conversion with light extraction enhancements
CN109065572B (zh) * 2018-07-20 2019-11-26 武汉华星光电半导体显示技术有限公司 Oled显示面板及oled显示装置

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KR20080054402A (ko) 2005-09-19 2008-06-17 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 가변 컬러 발광 장치와, 그를 포함하는 조명 시스템, 조명시스템 네트워크 및 어셈블리, 및 그를 위한 제어기 및제어 방법
DE102006024165A1 (de) 2006-05-23 2007-11-29 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
JP4291837B2 (ja) 2006-08-30 2009-07-08 株式会社沖データ 投写型表示装置および画像形成装置
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EP2122695A4 (en) 2007-03-08 2013-09-11 3M Innovative Properties Co NETWORK OF LUMINESCENT ELEMENTS
KR20100077191A (ko) 2007-10-08 2010-07-07 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접합된 반도체 파장 변환기를 갖는 발광 다이오드
US7915627B2 (en) * 2007-10-17 2011-03-29 Intematix Corporation Light emitting device with phosphor wavelength conversion
US20110121319A1 (en) 2007-12-10 2011-05-26 Haase Michael A Semiconductor light emitting device and method of making same
KR20100097205A (ko) 2007-12-10 2010-09-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 단순화된 광 추출을 갖는 하향-변환된 발광 다이오드
US8299701B2 (en) * 2007-12-27 2012-10-30 Ge Lighting Solutions Llc Lighting device having illumination, backlighting and display applications
WO2009148717A2 (en) * 2008-06-05 2009-12-10 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
US20090321758A1 (en) * 2008-06-25 2009-12-31 Wen-Huang Liu Led with improved external light extraction efficiency
EP2308102A4 (en) 2008-06-26 2014-05-07 3M Innovative Properties Co METHOD FOR PRODUCING A LIGHT EXTRACTOR
CN102124583B (zh) 2008-06-26 2013-06-19 3M创新有限公司 半导体光转换构造

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017513225A (ja) * 2014-04-01 2017-05-25 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク 半導体画素、このような画素のマトリクス、このような画素を製造するための半導体構造、およびそれらの製作方法
JP2019534564A (ja) * 2016-10-25 2019-11-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体素子の製造方法およびオプトエレクトロニクス半導体素子
US11018283B2 (en) 2016-10-25 2021-05-25 Osram Oled Gmbh Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component
JP7003124B2 (ja) 2016-10-25 2022-01-20 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体素子の製造方法およびオプトエレクトロニクス半導体素子
US11557700B2 (en) 2016-10-25 2023-01-17 Osram Oled Gmbh Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component
US12349523B2 (en) 2016-10-25 2025-07-01 Osram Oled Gmbh Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component
JP2022543821A (ja) * 2019-08-06 2022-10-14 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法
JP7387871B2 (ja) 2019-08-06 2023-11-28 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法

Also Published As

Publication number Publication date
EP2380216A2 (en) 2011-10-26
US20110260601A1 (en) 2011-10-27
TW201029237A (en) 2010-08-01
WO2010074987A3 (en) 2010-08-19
CN102318089A (zh) 2012-01-11
WO2010074987A2 (en) 2010-07-01
KR20110105842A (ko) 2011-09-27
US8350462B2 (en) 2013-01-08

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