JP2008227553A5 - - Google Patents
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- Publication number
- JP2008227553A5 JP2008227553A5 JP2008163168A JP2008163168A JP2008227553A5 JP 2008227553 A5 JP2008227553 A5 JP 2008227553A5 JP 2008163168 A JP2008163168 A JP 2008163168A JP 2008163168 A JP2008163168 A JP 2008163168A JP 2008227553 A5 JP2008227553 A5 JP 2008227553A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- light emitting
- light
- emitting diode
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 50
- 239000010410 layer Substances 0.000 claims 8
- 239000012535 impurity Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 239000013078 crystal Substances 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052744 lithium Inorganic materials 0.000 claims 2
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 229910052693 Europium Inorganic materials 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 claims 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical group [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 230000001443 photoexcitation Effects 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008163168A JP4857310B2 (ja) | 2004-02-19 | 2008-06-23 | 半導体発光素子及びその製造方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004042329 | 2004-02-19 | ||
| JP2004042330 | 2004-02-19 | ||
| JP2004042329 | 2004-02-19 | ||
| JP2004042330 | 2004-02-19 | ||
| JP2008163168A JP4857310B2 (ja) | 2004-02-19 | 2008-06-23 | 半導体発光素子及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005043395A Division JP2005268775A (ja) | 2004-02-19 | 2005-02-21 | 半導体発光素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008227553A JP2008227553A (ja) | 2008-09-25 |
| JP2008227553A5 true JP2008227553A5 (enExample) | 2009-04-30 |
| JP4857310B2 JP4857310B2 (ja) | 2012-01-18 |
Family
ID=34863493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008163168A Expired - Fee Related JP4857310B2 (ja) | 2004-02-19 | 2008-06-23 | 半導体発光素子及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US7569863B2 (enExample) |
| JP (1) | JP4857310B2 (enExample) |
Families Citing this family (62)
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| US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US20060005763A1 (en) | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US7638346B2 (en) | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
| US7268370B2 (en) | 2003-06-05 | 2007-09-11 | Matsushita Electric Industrial Co., Ltd. | Phosphor, semiconductor light emitting device, and fabrication method thereof |
| US7915085B2 (en) * | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
| JP2005268770A (ja) * | 2004-02-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 白色発光素子及び白色光源 |
| US7569863B2 (en) * | 2004-02-19 | 2009-08-04 | Panasonic Corporation | Semiconductor light emitting device |
| WO2007065018A2 (en) | 2005-12-02 | 2007-06-07 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| WO2007123735A1 (en) | 2006-03-30 | 2007-11-01 | Crystal Is, Inc. | Methods for controllable doping of aluminum nitride bulk crystals |
| KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
| TWI349146B (en) * | 2006-05-15 | 2011-09-21 | Epistar Corp | A light-mixing type light-emitting device |
| DE112007001235B4 (de) * | 2006-05-23 | 2018-05-09 | Meijo University | Licht emittierende Halbleitervorrichtung |
| TW200807760A (en) * | 2006-05-23 | 2008-02-01 | Alps Electric Co Ltd | Method for manufacturing semiconductor light emitting element |
| JP2008098529A (ja) * | 2006-10-13 | 2008-04-24 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP4984824B2 (ja) * | 2006-10-26 | 2012-07-25 | 豊田合成株式会社 | 発光装置 |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| WO2008088838A1 (en) * | 2007-01-17 | 2008-07-24 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US8232564B2 (en) * | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
| US9196799B2 (en) * | 2007-01-22 | 2015-11-24 | Cree, Inc. | LED chips having fluorescent substrates with microholes and methods for fabricating |
| US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| CN101652832B (zh) | 2007-01-26 | 2011-06-22 | 晶体公司 | 厚的赝晶氮化物外延层 |
| US8080833B2 (en) * | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| US8088220B2 (en) | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
| TWI492412B (zh) * | 2007-09-07 | 2015-07-11 | Cree Inc | 晶圓級磷光體塗佈方法及使用該方法製造之裝置 |
| US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US8167674B2 (en) * | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US8878219B2 (en) * | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
| US7781780B2 (en) | 2008-03-31 | 2010-08-24 | Bridgelux, Inc. | Light emitting diodes with smooth surface for reflective electrode |
| DE102008051048A1 (de) * | 2008-10-09 | 2010-04-15 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper |
| KR100992743B1 (ko) * | 2008-12-26 | 2010-11-05 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| TWI466266B (zh) * | 2009-02-24 | 2014-12-21 | 晶元光電股份有限公司 | 陣列式發光元件及其裝置 |
| KR101603777B1 (ko) * | 2009-04-16 | 2016-03-15 | 삼성전자주식회사 | 백색 발광 다이오드 |
| KR101611412B1 (ko) * | 2009-10-28 | 2016-04-11 | 삼성전자주식회사 | 발광 소자 |
| KR101011757B1 (ko) * | 2010-04-09 | 2011-02-07 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 |
| CN103038400B (zh) | 2010-06-30 | 2016-06-22 | 晶体公司 | 使用热梯度控制的大块氮化铝单晶的生长 |
| KR101735670B1 (ko) | 2010-07-13 | 2017-05-15 | 엘지이노텍 주식회사 | 발광 소자 |
| CN102339920B (zh) * | 2010-07-20 | 2014-01-22 | 晶元光电股份有限公司 | 发光元件 |
| US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
| CN104752454B (zh) * | 2010-10-14 | 2018-08-03 | 晶元光电股份有限公司 | 发光元件 |
| US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
| JP2012186195A (ja) * | 2011-03-03 | 2012-09-27 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| JP5479391B2 (ja) * | 2011-03-08 | 2014-04-23 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| US9331252B2 (en) | 2011-08-23 | 2016-05-03 | Micron Technology, Inc. | Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods |
| US8975614B2 (en) * | 2011-08-23 | 2015-03-10 | Micron Technology, Inc. | Wavelength converters for solid state lighting devices, and associated systems and methods |
| JP5988568B2 (ja) * | 2011-11-14 | 2016-09-07 | Dowaエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
| KR20140086624A (ko) * | 2012-12-28 | 2014-07-08 | 삼성전자주식회사 | 질화물 반도체 발광 소자 |
| TWI584493B (zh) * | 2013-02-04 | 2017-05-21 | 晶元光電股份有限公司 | 發光二極體及其製作方法 |
| CN105144345B (zh) | 2013-03-15 | 2018-05-08 | 晶体公司 | 与赝配电子和光电器件的平面接触 |
| US9450157B2 (en) * | 2013-04-30 | 2016-09-20 | Soko Kagaku Co., Ltd. | Ultraviolet light emitting device using metal non-bondable amorphous fluororesin molding compound |
| JP6174931B2 (ja) * | 2013-07-26 | 2017-08-02 | 学校法人 名城大学 | 半導体光素子アレイ及びその作製方法と、半導体光素子アレイを用いた表示装置 |
| US10456488B2 (en) | 2014-03-07 | 2019-10-29 | Sensor Electronic Technology, Inc. | Ultraviolet transparent structure for ultraviolet illumination using scattered and focused radiation |
| DE202015009236U1 (de) | 2014-03-07 | 2016-12-27 | Sensor Electronic Technology, Inc. | Ultraviolett-Oberflächenilluminator |
| US20160111618A1 (en) * | 2014-05-07 | 2016-04-21 | Sensor Electronic Technology, Inc. | Optoelectronic device including improved thermal management |
| KR102373677B1 (ko) * | 2015-08-24 | 2022-03-14 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
| CN106410006B (zh) * | 2016-06-22 | 2018-08-17 | 厦门乾照光电股份有限公司 | 一种集成可见光指示装置的紫外发光二极管及其生产方法 |
| US10734545B2 (en) * | 2017-06-21 | 2020-08-04 | The Regents Of The University Of Michigan | Monolithically integrated InGaN/GaN quantum nanowire devices |
| US10199532B1 (en) * | 2017-09-08 | 2019-02-05 | Mikro Mesa Technology Co., Ltd. | Light-emitting diode and method for manufacturing the same |
| US12159846B2 (en) * | 2019-07-01 | 2024-12-03 | Texas Instruments Incorporated | Process flow for fabrication of cap metal over top metal with sinter before protective dielectric etch |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH08288549A (ja) | 1995-04-11 | 1996-11-01 | Omron Corp | 多波長発光半導体素子 |
| JPH09232627A (ja) | 1996-02-26 | 1997-09-05 | Matsushita Electric Ind Co Ltd | 白色発光素子 |
| US6600175B1 (en) * | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
| US5955749A (en) * | 1996-12-02 | 1999-09-21 | Massachusetts Institute Of Technology | Light emitting device utilizing a periodic dielectric structure |
| JPH10261818A (ja) * | 1997-03-19 | 1998-09-29 | Fujitsu Ltd | 発光半導体装置 |
| JP3559446B2 (ja) | 1998-03-23 | 2004-09-02 | 株式会社東芝 | 半導体発光素子および半導体発光装置 |
| JP4292600B2 (ja) | 1998-09-11 | 2009-07-08 | ソニー株式会社 | GaN系半導体発光素子およびその製造方法 |
| JP3525061B2 (ja) | 1998-09-25 | 2004-05-10 | 株式会社東芝 | 半導体発光素子の製造方法 |
| US6153894A (en) * | 1998-11-12 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device |
| JP3950254B2 (ja) | 1999-03-10 | 2007-07-25 | 住友電気工業株式会社 | 発光装置 |
| JP2000082849A (ja) | 1999-09-27 | 2000-03-21 | Toshiba Corp | 半導体発光素子、半導体発光装置およびその製造方法 |
| TW497277B (en) * | 2000-03-10 | 2002-08-01 | Toshiba Corp | Semiconductor light emitting device and method for manufacturing the same |
| JP4008656B2 (ja) | 2000-12-27 | 2007-11-14 | 株式会社東芝 | 半導体発光装置 |
| JP2002009335A (ja) | 2000-06-19 | 2002-01-11 | Hitachi Cable Ltd | 発光ダイオード |
| JP4077170B2 (ja) | 2000-09-21 | 2008-04-16 | シャープ株式会社 | 半導体発光装置 |
| JP2002111072A (ja) | 2000-09-29 | 2002-04-12 | Toyoda Gosei Co Ltd | 発光装置 |
| KR20010000545A (ko) * | 2000-10-05 | 2001-01-05 | 유태경 | 펌핑 층이 집적된 다 파장 AlGaInN계 반도체LED 소자 및 그 제조 방법 |
| JP2002217450A (ja) | 2001-01-22 | 2002-08-02 | Sanken Electric Co Ltd | 半導体発光素子及びその製造方法 |
| JP2002222989A (ja) * | 2001-01-26 | 2002-08-09 | Toshiba Corp | 半導体発光素子 |
| JP2002299686A (ja) | 2001-03-29 | 2002-10-11 | Sharp Corp | 半導体発光素子およびその製造方法 |
| JP2002319703A (ja) | 2001-04-20 | 2002-10-31 | Ricoh Co Ltd | 半導体装置およびその作製方法 |
| JP3791765B2 (ja) | 2001-06-08 | 2006-06-28 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
| US6537838B2 (en) | 2001-06-11 | 2003-03-25 | Limileds Lighting, U.S., Llc | Forming semiconductor structures including activated acceptors in buried p-type III-V layers |
| JP2003037291A (ja) | 2001-07-25 | 2003-02-07 | Nichia Chem Ind Ltd | 発光素子 |
| JP4193471B2 (ja) | 2001-12-14 | 2008-12-10 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
| ATE445233T1 (de) * | 2002-01-28 | 2009-10-15 | Nichia Corp | Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung |
| DE10203801A1 (de) | 2002-01-31 | 2003-08-21 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Verfahren zu dessen Herstellung |
| JP4233268B2 (ja) | 2002-04-23 | 2009-03-04 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
| JP3962282B2 (ja) | 2002-05-23 | 2007-08-22 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US6972516B2 (en) * | 2002-06-14 | 2005-12-06 | University Of Cincinnati | Photopump-enhanced electroluminescent devices |
| US7005679B2 (en) * | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
| US7569863B2 (en) * | 2004-02-19 | 2009-08-04 | Panasonic Corporation | Semiconductor light emitting device |
| JP2005268770A (ja) * | 2004-02-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 白色発光素子及び白色光源 |
-
2005
- 2005-02-18 US US11/060,425 patent/US7569863B2/en active Active
-
2008
- 2008-06-23 JP JP2008163168A patent/JP4857310B2/ja not_active Expired - Fee Related
-
2009
- 2009-06-23 US US12/490,200 patent/US20090261372A1/en not_active Abandoned
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