JP4857310B2 - 半導体発光素子及びその製造方法 - Google Patents

半導体発光素子及びその製造方法 Download PDF

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Publication number
JP4857310B2
JP4857310B2 JP2008163168A JP2008163168A JP4857310B2 JP 4857310 B2 JP4857310 B2 JP 4857310B2 JP 2008163168 A JP2008163168 A JP 2008163168A JP 2008163168 A JP2008163168 A JP 2008163168A JP 4857310 B2 JP4857310 B2 JP 4857310B2
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Prior art keywords
light emitting
light
layer
semiconductor
emitting diode
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Expired - Fee Related
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JP2008163168A
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Japanese (ja)
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JP2008227553A (ja
JP2008227553A5 (enExample
Inventor
哲三 上田
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Publication of JP2008227553A5 publication Critical patent/JP2008227553A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05016—Shape in side view
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    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

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JP2008163168A 2004-02-19 2008-06-23 半導体発光素子及びその製造方法 Expired - Fee Related JP4857310B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008163168A JP4857310B2 (ja) 2004-02-19 2008-06-23 半導体発光素子及びその製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004042329 2004-02-19
JP2004042330 2004-02-19
JP2004042329 2004-02-19
JP2004042330 2004-02-19
JP2008163168A JP4857310B2 (ja) 2004-02-19 2008-06-23 半導体発光素子及びその製造方法

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JP2005043395A Division JP2005268775A (ja) 2004-02-19 2005-02-21 半導体発光素子及びその製造方法

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JP2008227553A JP2008227553A (ja) 2008-09-25
JP2008227553A5 JP2008227553A5 (enExample) 2009-04-30
JP4857310B2 true JP4857310B2 (ja) 2012-01-18

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US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US7268370B2 (en) 2003-06-05 2007-09-11 Matsushita Electric Industrial Co., Ltd. Phosphor, semiconductor light emitting device, and fabrication method thereof
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP2005268770A (ja) * 2004-02-19 2005-09-29 Matsushita Electric Ind Co Ltd 白色発光素子及び白色光源
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US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
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KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
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JP2008098529A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 半導体装置及びその製造方法
JP4984824B2 (ja) * 2006-10-26 2012-07-25 豊田合成株式会社 発光装置
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US8232564B2 (en) * 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
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US7781780B2 (en) 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
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