JP2009218483A5 - - Google Patents

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Publication number
JP2009218483A5
JP2009218483A5 JP2008062611A JP2008062611A JP2009218483A5 JP 2009218483 A5 JP2009218483 A5 JP 2009218483A5 JP 2008062611 A JP2008062611 A JP 2008062611A JP 2008062611 A JP2008062611 A JP 2008062611A JP 2009218483 A5 JP2009218483 A5 JP 2009218483A5
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JP
Japan
Prior art keywords
semiconductor layer
light emitting
semiconductor
layer
electrode
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Application number
JP2008062611A
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English (en)
Japanese (ja)
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JP2009218483A (ja
JP5047013B2 (ja
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Priority claimed from JP2008062611A external-priority patent/JP5047013B2/ja
Priority to JP2008062611A priority Critical patent/JP5047013B2/ja
Application filed filed Critical
Priority to US12/401,473 priority patent/US8017970B2/en
Priority to EP09250663.3A priority patent/EP2101363B1/en
Publication of JP2009218483A publication Critical patent/JP2009218483A/ja
Priority to US12/929,365 priority patent/US8377724B2/en
Publication of JP2009218483A5 publication Critical patent/JP2009218483A5/ja
Publication of JP5047013B2 publication Critical patent/JP5047013B2/ja
Application granted granted Critical
Priority to US13/744,437 priority patent/US8729594B2/en
Priority to US14/244,915 priority patent/US9373752B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008062611A 2008-03-12 2008-03-12 半導体発光素子及びその製造方法 Active JP5047013B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008062611A JP5047013B2 (ja) 2008-03-12 2008-03-12 半導体発光素子及びその製造方法
US12/401,473 US8017970B2 (en) 2008-03-12 2009-03-10 Semiconductor light-emitting element
EP09250663.3A EP2101363B1 (en) 2008-03-12 2009-03-10 Semiconductor light-emitting element and method for producing the same
US12/929,365 US8377724B2 (en) 2008-03-12 2011-01-19 Method for producing semiconductor light-emitting element
US13/744,437 US8729594B2 (en) 2008-03-12 2013-01-18 Semiconductor light-emitting element
US14/244,915 US9373752B2 (en) 2008-03-12 2014-04-04 Semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008062611A JP5047013B2 (ja) 2008-03-12 2008-03-12 半導体発光素子及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012152257A Division JP5368609B2 (ja) 2012-07-06 2012-07-06 半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2009218483A JP2009218483A (ja) 2009-09-24
JP2009218483A5 true JP2009218483A5 (enExample) 2011-10-20
JP5047013B2 JP5047013B2 (ja) 2012-10-10

Family

ID=40933169

Family Applications (1)

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JP2008062611A Active JP5047013B2 (ja) 2008-03-12 2008-03-12 半導体発光素子及びその製造方法

Country Status (3)

Country Link
US (4) US8017970B2 (enExample)
EP (1) EP2101363B1 (enExample)
JP (1) JP5047013B2 (enExample)

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US7577453B2 (en) 2006-06-01 2009-08-18 Trapeze Networks, Inc. Wireless load balancing across bands
US7950643B2 (en) 2007-09-04 2011-05-31 Kabushiki Kaisha Toshiba Sheet finisher, image forming apparatus using the same, and sheet finishing method
JP2010219377A (ja) * 2009-03-18 2010-09-30 Toshiba Corp 半導体発光装置及びその製造方法
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
KR20120092325A (ko) * 2011-02-11 2012-08-21 서울옵토디바이스주식회사 광 결정 구조를 갖는 발광 다이오드 및 그것을 제조하는 방법
JP4989773B1 (ja) 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
TW201301588A (zh) * 2011-06-30 2013-01-01 兆鑫光電科技股份有限公司 大發光面積的發光二極體晶粒及其封裝結構
JP2013140948A (ja) * 2011-12-09 2013-07-18 Toshiba Corp 半導体発光素子及びその製造方法
KR101976450B1 (ko) * 2012-10-19 2019-05-09 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
TWI604632B (zh) 2013-04-25 2017-11-01 晶元光電股份有限公司 發光二極體裝置
FR3005784B1 (fr) * 2013-05-14 2016-10-07 Aledia Dispositif optoelectronique et son procede de fabrication
JP2014099663A (ja) * 2014-03-04 2014-05-29 Toshiba Corp 半導体発光素子
JP2016046411A (ja) * 2014-08-25 2016-04-04 シャープ株式会社 半導体発光素子
JP6793815B2 (ja) * 2017-03-27 2020-12-02 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US11978839B2 (en) * 2019-02-03 2024-05-07 Quanzhou Sanan Semiconductor Technology Co., Ltd. Light-emitting device

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JP3559453B2 (ja) * 1998-06-29 2004-09-02 株式会社東芝 発光素子
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
WO2002073753A2 (en) * 2001-03-09 2002-09-19 Alight Technologies A/S Mode control using transversal bandgap structure in vcsels
JP3866540B2 (ja) * 2001-07-06 2007-01-10 株式会社東芝 窒化物半導体素子およびその製造方法
JP4173445B2 (ja) * 2001-09-13 2008-10-29 学校法人 名城大学 窒化物半導体基板、その製造方法、およびそれを用いた半導体発光素子
JP2004014943A (ja) * 2002-06-10 2004-01-15 Sony Corp マルチビーム型半導体レーザ、半導体発光素子および半導体装置
KR20050051920A (ko) * 2003-11-28 2005-06-02 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
JP2006041498A (ja) * 2004-06-24 2006-02-09 Showa Denko Kk 反射性正極およびそれを用いた窒化ガリウム系化合物半導体発光素子
EP1804301B1 (en) * 2004-10-19 2017-01-11 Nichia Corporation Semiconductor element
JP4869582B2 (ja) * 2004-11-29 2012-02-08 シャープ株式会社 半導体レーザ素子、光ディスク装置および光伝送システム
US20060170022A1 (en) * 2005-01-31 2006-08-03 Klaus Ufert Silicon molecular hybrid storage cell
JP5008263B2 (ja) * 2005-03-02 2012-08-22 日亜化学工業株式会社 半導体発光素子
JP4653671B2 (ja) * 2005-03-14 2011-03-16 株式会社東芝 発光装置
KR100878433B1 (ko) * 2005-05-18 2009-01-13 삼성전기주식회사 발광소자의 오믹컨택층 제조방법 및 이를 이용한발광소자의 제조방법
JP2007005591A (ja) 2005-06-24 2007-01-11 Toshiba Corp 半導体発光素子
US7638810B2 (en) * 2005-09-09 2009-12-29 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. GaN laser with refractory metal ELOG masks for intracavity contact
US7873090B2 (en) * 2005-09-13 2011-01-18 Panasonic Corporation Surface emitting laser, photodetector and optical communication system using the same
JP4688674B2 (ja) * 2005-10-20 2011-05-25 京セラ株式会社 発光素子収納用パッケージおよび発光装置
JP5037835B2 (ja) * 2006-02-28 2012-10-03 キヤノン株式会社 垂直共振器型面発光レーザ
JP2008062611A (ja) 2006-09-11 2008-03-21 Sekisui Film Kk 積層フィルム及び積層体
TW200945627A (en) * 2007-12-07 2009-11-01 Alps Electric Co Ltd Semiconductor light-emitting device
KR101007117B1 (ko) * 2008-10-16 2011-01-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8796718B2 (en) * 2009-09-30 2014-08-05 Kyocera Corporation Light emitting element and method for manufacturing light emitting element

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