JP5047013B2 - 半導体発光素子及びその製造方法 - Google Patents

半導体発光素子及びその製造方法 Download PDF

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Publication number
JP5047013B2
JP5047013B2 JP2008062611A JP2008062611A JP5047013B2 JP 5047013 B2 JP5047013 B2 JP 5047013B2 JP 2008062611 A JP2008062611 A JP 2008062611A JP 2008062611 A JP2008062611 A JP 2008062611A JP 5047013 B2 JP5047013 B2 JP 5047013B2
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Japan
Prior art keywords
semiconductor layer
light emitting
electrode
layer
semiconductor
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JP2008062611A
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English (en)
Japanese (ja)
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JP2009218483A5 (enExample
JP2009218483A (ja
Inventor
弘 勝野
康夫 大場
桂 金子
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2008062611A priority Critical patent/JP5047013B2/ja
Priority to US12/401,473 priority patent/US8017970B2/en
Priority to EP09250663.3A priority patent/EP2101363B1/en
Publication of JP2009218483A publication Critical patent/JP2009218483A/ja
Priority to US12/929,365 priority patent/US8377724B2/en
Publication of JP2009218483A5 publication Critical patent/JP2009218483A5/ja
Application granted granted Critical
Publication of JP5047013B2 publication Critical patent/JP5047013B2/ja
Priority to US13/744,437 priority patent/US8729594B2/en
Priority to US14/244,915 priority patent/US9373752B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2008062611A 2008-03-12 2008-03-12 半導体発光素子及びその製造方法 Active JP5047013B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008062611A JP5047013B2 (ja) 2008-03-12 2008-03-12 半導体発光素子及びその製造方法
US12/401,473 US8017970B2 (en) 2008-03-12 2009-03-10 Semiconductor light-emitting element
EP09250663.3A EP2101363B1 (en) 2008-03-12 2009-03-10 Semiconductor light-emitting element and method for producing the same
US12/929,365 US8377724B2 (en) 2008-03-12 2011-01-19 Method for producing semiconductor light-emitting element
US13/744,437 US8729594B2 (en) 2008-03-12 2013-01-18 Semiconductor light-emitting element
US14/244,915 US9373752B2 (en) 2008-03-12 2014-04-04 Semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008062611A JP5047013B2 (ja) 2008-03-12 2008-03-12 半導体発光素子及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012152257A Division JP5368609B2 (ja) 2012-07-06 2012-07-06 半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2009218483A JP2009218483A (ja) 2009-09-24
JP2009218483A5 JP2009218483A5 (enExample) 2011-10-20
JP5047013B2 true JP5047013B2 (ja) 2012-10-10

Family

ID=40933169

Family Applications (1)

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JP2008062611A Active JP5047013B2 (ja) 2008-03-12 2008-03-12 半導体発光素子及びその製造方法

Country Status (3)

Country Link
US (4) US8017970B2 (enExample)
EP (1) EP2101363B1 (enExample)
JP (1) JP5047013B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7577453B2 (en) 2006-06-01 2009-08-18 Trapeze Networks, Inc. Wireless load balancing across bands
US7950643B2 (en) 2007-09-04 2011-05-31 Kabushiki Kaisha Toshiba Sheet finisher, image forming apparatus using the same, and sheet finishing method
JP2010219377A (ja) * 2009-03-18 2010-09-30 Toshiba Corp 半導体発光装置及びその製造方法
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
KR20120092325A (ko) * 2011-02-11 2012-08-21 서울옵토디바이스주식회사 광 결정 구조를 갖는 발광 다이오드 및 그것을 제조하는 방법
JP4989773B1 (ja) 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
TW201301588A (zh) * 2011-06-30 2013-01-01 兆鑫光電科技股份有限公司 大發光面積的發光二極體晶粒及其封裝結構
JP2013140948A (ja) * 2011-12-09 2013-07-18 Toshiba Corp 半導体発光素子及びその製造方法
KR101976450B1 (ko) 2012-10-19 2019-05-09 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
TWI604632B (zh) 2013-04-25 2017-11-01 晶元光電股份有限公司 發光二極體裝置
FR3005784B1 (fr) * 2013-05-14 2016-10-07 Aledia Dispositif optoelectronique et son procede de fabrication
JP2014099663A (ja) * 2014-03-04 2014-05-29 Toshiba Corp 半導体発光素子
JP2016046411A (ja) * 2014-08-25 2016-04-04 シャープ株式会社 半導体発光素子
CN110462851B (zh) * 2017-03-27 2022-07-19 同和电子科技有限公司 Iii族氮化物半导体发光元件及其制造方法
US11978839B2 (en) * 2019-02-03 2024-05-07 Quanzhou Sanan Semiconductor Technology Co., Ltd. Light-emitting device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3559453B2 (ja) * 1998-06-29 2004-09-02 株式会社東芝 発光素子
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
AU2002237203A1 (en) * 2001-03-09 2002-09-24 Danmarks Tekniske Universitet Mode control using transversal bandgap structure in vcsels
JP3866540B2 (ja) 2001-07-06 2007-01-10 株式会社東芝 窒化物半導体素子およびその製造方法
US6967359B2 (en) * 2001-09-13 2005-11-22 Japan Science And Technology Agency Nitride semiconductor substrate production method thereof and semiconductor optical device using the same
JP2004014943A (ja) * 2002-06-10 2004-01-15 Sony Corp マルチビーム型半導体レーザ、半導体発光素子および半導体装置
KR20050051920A (ko) * 2003-11-28 2005-06-02 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
JP2006041498A (ja) * 2004-06-24 2006-02-09 Showa Denko Kk 反射性正極およびそれを用いた窒化ガリウム系化合物半導体発光素子
EP1804301B1 (en) * 2004-10-19 2017-01-11 Nichia Corporation Semiconductor element
JP4869582B2 (ja) * 2004-11-29 2012-02-08 シャープ株式会社 半導体レーザ素子、光ディスク装置および光伝送システム
US20060170022A1 (en) * 2005-01-31 2006-08-03 Klaus Ufert Silicon molecular hybrid storage cell
JP5008263B2 (ja) * 2005-03-02 2012-08-22 日亜化学工業株式会社 半導体発光素子
JP4653671B2 (ja) * 2005-03-14 2011-03-16 株式会社東芝 発光装置
KR100878433B1 (ko) * 2005-05-18 2009-01-13 삼성전기주식회사 발광소자의 오믹컨택층 제조방법 및 이를 이용한발광소자의 제조방법
JP2007005591A (ja) 2005-06-24 2007-01-11 Toshiba Corp 半導体発光素子
US7638810B2 (en) * 2005-09-09 2009-12-29 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. GaN laser with refractory metal ELOG masks for intracavity contact
US7873090B2 (en) * 2005-09-13 2011-01-18 Panasonic Corporation Surface emitting laser, photodetector and optical communication system using the same
JP4688674B2 (ja) * 2005-10-20 2011-05-25 京セラ株式会社 発光素子収納用パッケージおよび発光装置
JP5037835B2 (ja) * 2006-02-28 2012-10-03 キヤノン株式会社 垂直共振器型面発光レーザ
JP2008062611A (ja) 2006-09-11 2008-03-21 Sekisui Film Kk 積層フィルム及び積層体
TW200945627A (en) * 2007-12-07 2009-11-01 Alps Electric Co Ltd Semiconductor light-emitting device
KR101007117B1 (ko) * 2008-10-16 2011-01-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
EP2485279B1 (en) * 2009-09-30 2018-08-15 Kyocera Corporation Light emitting element and method for manufacturing light emitting element

Also Published As

Publication number Publication date
US8017970B2 (en) 2011-09-13
US20130134458A1 (en) 2013-05-30
US9373752B2 (en) 2016-06-21
US20140217360A1 (en) 2014-08-07
EP2101363A2 (en) 2009-09-16
US20090230422A1 (en) 2009-09-17
US8377724B2 (en) 2013-02-19
JP2009218483A (ja) 2009-09-24
US20110117684A1 (en) 2011-05-19
US8729594B2 (en) 2014-05-20
EP2101363B1 (en) 2018-06-06
EP2101363A3 (en) 2014-08-20

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