JP2011507272A5 - - Google Patents

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Publication number
JP2011507272A5
JP2011507272A5 JP2010538013A JP2010538013A JP2011507272A5 JP 2011507272 A5 JP2011507272 A5 JP 2011507272A5 JP 2010538013 A JP2010538013 A JP 2010538013A JP 2010538013 A JP2010538013 A JP 2010538013A JP 2011507272 A5 JP2011507272 A5 JP 2011507272A5
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JP
Japan
Prior art keywords
led
converter
wafer
wavelength
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010538013A
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English (en)
Japanese (ja)
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JP2011507272A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/082766 external-priority patent/WO2009075972A2/en
Publication of JP2011507272A publication Critical patent/JP2011507272A/ja
Publication of JP2011507272A5 publication Critical patent/JP2011507272A5/ja
Pending legal-status Critical Current

Links

JP2010538013A 2007-12-10 2008-11-07 簡易な光抽出方式の下方変換発光ダイオード Pending JP2011507272A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1260407P 2007-12-10 2007-12-10
PCT/US2008/082766 WO2009075972A2 (en) 2007-12-10 2008-11-07 Down-converted light emitting diode with simplified light extraction

Publications (2)

Publication Number Publication Date
JP2011507272A JP2011507272A (ja) 2011-03-03
JP2011507272A5 true JP2011507272A5 (enExample) 2011-12-22

Family

ID=40756057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010538013A Pending JP2011507272A (ja) 2007-12-10 2008-11-07 簡易な光抽出方式の下方変換発光ダイオード

Country Status (7)

Country Link
US (1) US20100295075A1 (enExample)
EP (1) EP2232591A4 (enExample)
JP (1) JP2011507272A (enExample)
KR (1) KR20100097205A (enExample)
CN (1) CN101897038B (enExample)
TW (1) TWI453943B (enExample)
WO (1) WO2009075972A2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009085594A2 (en) * 2007-12-28 2009-07-09 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
KR20110031953A (ko) * 2008-06-26 2011-03-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반도체 광 변환 구조체
CN102124582B (zh) 2008-06-26 2013-11-06 3M创新有限公司 半导体光转换构造
CN102318088A (zh) 2008-12-24 2012-01-11 3M创新有限公司 制备双面波长转换器和使用所述双面波长转换器的光产生装置的方法
JP2012514329A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側に波長変換器を有する光生成デバイス
DE102009020127A1 (de) * 2009-03-25 2010-09-30 Osram Opto Semiconductors Gmbh Leuchtdiode
DE102009023351A1 (de) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102009048401A1 (de) 2009-10-06 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102010008605A1 (de) * 2010-02-19 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauteil
CN102270724B (zh) * 2010-06-01 2014-04-09 陈文彬 发光二极管晶片级色彩纯化的方法
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
CN102593269A (zh) * 2011-01-11 2012-07-18 旭明光电股份有限公司 白光led装置及其制造方法
DE102011014845B4 (de) 2011-03-23 2023-05-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierendes Halbleiterbauteil und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauteils
TWI466343B (zh) * 2012-01-06 2014-12-21 華夏光股份有限公司 發光二極體裝置
EP2979310B1 (en) 2013-03-29 2019-07-03 Signify Holding B.V. Light emitting device comprising wavelength converter
JP2015072751A (ja) * 2013-10-01 2015-04-16 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
US9529969B2 (en) * 2014-01-27 2016-12-27 RDFISolutions, LLC Event based tracking, health management, and patient and treatment monitoring system
DE112015000511B4 (de) 2014-01-27 2023-01-05 Osram Sylvania Inc. Keramischer Wellenlängenumwandler mit einem hochreflektierenden Reflektor
DE102016101442B4 (de) * 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
DE102016113002B4 (de) 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
DE102018101089A1 (de) * 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
EP4050666A1 (en) 2021-02-26 2022-08-31 Nichia Corporation Semiconductor light emitting element and method of manufacturing the same

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739217A (en) * 1969-06-23 1973-06-12 Bell Telephone Labor Inc Surface roughening of electroluminescent diodes
US6252896B1 (en) * 1999-03-05 2001-06-26 Agilent Technologies, Inc. Long-Wavelength VCSEL using buried bragg reflectors
EP1234344B1 (en) * 1999-12-03 2020-12-02 Cree, Inc. Enhanced light extraction in leds through the use of internal and external optical elements
JP4044261B2 (ja) * 2000-03-10 2008-02-06 株式会社東芝 半導体発光素子及びその製造方法
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
WO2002084631A1 (en) * 2001-04-11 2002-10-24 Sony Corporation Element transfer method, element arrangmenet method using the same, and image display apparatus production method
JP2003124504A (ja) * 2001-10-18 2003-04-25 Toshiba Corp 半導体発光装置、および半導体発光装置の製造方法
US6954478B2 (en) * 2002-02-04 2005-10-11 Sanyo Electric Co., Ltd. Nitride-based semiconductor laser device
TW591811B (en) * 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
KR101154494B1 (ko) * 2003-12-09 2012-06-13 재팬 사이언스 앤드 테크놀로지 에이젼시 질소면의 표면상의 구조물 제조를 통한 고효율 3족 질화물계 발광다이오드
JP2005277374A (ja) * 2004-02-26 2005-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
CN100561758C (zh) * 2004-10-22 2009-11-18 首尔Opto仪器股份有限公司 氮化镓化合物半导体发光元件及其制造方法
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
JP2006310721A (ja) * 2005-03-28 2006-11-09 Yokohama National Univ 自発光デバイス
JP2007109792A (ja) * 2005-10-12 2007-04-26 Sony Corp 半導体発光素子および波長変換基板
JP2009515340A (ja) * 2005-10-31 2009-04-09 トラスティーズ オブ ボストン ユニバーシティ テクスチャ出しされた半導体層を特徴とする光学装置
US7791271B2 (en) * 2006-02-24 2010-09-07 Global Oled Technology Llc Top-emitting OLED device with light-scattering layer and color-conversion
US8049233B2 (en) * 2006-03-10 2011-11-01 Panasonic Electric Works Co., Ltd. Light-emitting device
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7863634B2 (en) * 2006-06-12 2011-01-04 3M Innovative Properties Company LED device with re-emitting semiconductor construction and reflector
US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
US7627017B2 (en) * 2006-08-25 2009-12-01 Stc. Unm Laser amplifier and method of making the same
US9018619B2 (en) * 2006-10-09 2015-04-28 Cree, Inc. Quantum wells for light conversion
US20080121903A1 (en) * 2006-11-24 2008-05-29 Sony Corporation Method for manufacturing light-emitting diode, light-emitting diode, lightsource cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display, and electronic apparatus
WO2009048704A2 (en) * 2007-10-08 2009-04-16 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter

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