JP2011507272A5 - - Google Patents

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Publication number
JP2011507272A5
JP2011507272A5 JP2010538013A JP2010538013A JP2011507272A5 JP 2011507272 A5 JP2011507272 A5 JP 2011507272A5 JP 2010538013 A JP2010538013 A JP 2010538013A JP 2010538013 A JP2010538013 A JP 2010538013A JP 2011507272 A5 JP2011507272 A5 JP 2011507272A5
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JP
Japan
Prior art keywords
led
converter
wafer
wavelength
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010538013A
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English (en)
Japanese (ja)
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JP2011507272A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/082766 external-priority patent/WO2009075972A2/en
Publication of JP2011507272A publication Critical patent/JP2011507272A/ja
Publication of JP2011507272A5 publication Critical patent/JP2011507272A5/ja
Pending legal-status Critical Current

Links

JP2010538013A 2007-12-10 2008-11-07 簡易な光抽出方式の下方変換発光ダイオード Pending JP2011507272A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1260407P 2007-12-10 2007-12-10
PCT/US2008/082766 WO2009075972A2 (en) 2007-12-10 2008-11-07 Down-converted light emitting diode with simplified light extraction

Publications (2)

Publication Number Publication Date
JP2011507272A JP2011507272A (ja) 2011-03-03
JP2011507272A5 true JP2011507272A5 (enExample) 2011-12-22

Family

ID=40756057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010538013A Pending JP2011507272A (ja) 2007-12-10 2008-11-07 簡易な光抽出方式の下方変換発光ダイオード

Country Status (7)

Country Link
US (1) US20100295075A1 (enExample)
EP (1) EP2232591A4 (enExample)
JP (1) JP2011507272A (enExample)
KR (1) KR20100097205A (enExample)
CN (1) CN101897038B (enExample)
TW (1) TWI453943B (enExample)
WO (1) WO2009075972A2 (enExample)

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US12389717B2 (en) 2021-02-26 2025-08-12 Nichia Corporation Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

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