JP2011507272A5 - - Google Patents

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Publication number
JP2011507272A5
JP2011507272A5 JP2010538013A JP2010538013A JP2011507272A5 JP 2011507272 A5 JP2011507272 A5 JP 2011507272A5 JP 2010538013 A JP2010538013 A JP 2010538013A JP 2010538013 A JP2010538013 A JP 2010538013A JP 2011507272 A5 JP2011507272 A5 JP 2011507272A5
Authority
JP
Japan
Prior art keywords
led
converter
wafer
wavelength
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010538013A
Other languages
English (en)
Japanese (ja)
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JP2011507272A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/082766 external-priority patent/WO2009075972A2/en
Publication of JP2011507272A publication Critical patent/JP2011507272A/ja
Publication of JP2011507272A5 publication Critical patent/JP2011507272A5/ja
Pending legal-status Critical Current

Links

JP2010538013A 2007-12-10 2008-11-07 簡易な光抽出方式の下方変換発光ダイオード Pending JP2011507272A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1260407P 2007-12-10 2007-12-10
PCT/US2008/082766 WO2009075972A2 (en) 2007-12-10 2008-11-07 Down-converted light emitting diode with simplified light extraction

Publications (2)

Publication Number Publication Date
JP2011507272A JP2011507272A (ja) 2011-03-03
JP2011507272A5 true JP2011507272A5 (enExample) 2011-12-22

Family

ID=40756057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010538013A Pending JP2011507272A (ja) 2007-12-10 2008-11-07 簡易な光抽出方式の下方変換発光ダイオード

Country Status (7)

Country Link
US (1) US20100295075A1 (enExample)
EP (1) EP2232591A4 (enExample)
JP (1) JP2011507272A (enExample)
KR (1) KR20100097205A (enExample)
CN (1) CN101897038B (enExample)
TW (1) TWI453943B (enExample)
WO (1) WO2009075972A2 (enExample)

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EP2308104A4 (en) * 2008-06-26 2014-04-30 3M Innovative Properties Co SEMICONDUCTOR LIGHT CONVERSION CONSTRUCTION
CN102318089A (zh) 2008-12-24 2012-01-11 3M创新有限公司 具有双面波长转换器的光产生装置
WO2010075177A2 (en) 2008-12-24 2010-07-01 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
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DE102009023351A1 (de) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
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DE102010008605A1 (de) * 2010-02-19 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauteil
CN102270724B (zh) * 2010-06-01 2014-04-09 陈文彬 发光二极管晶片级色彩纯化的方法
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
CN102593269A (zh) * 2011-01-11 2012-07-18 旭明光电股份有限公司 白光led装置及其制造方法
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WO2015112946A1 (en) 2014-01-27 2015-07-30 Osram Sylvania Inc. Ceramic wavelength converter having a high reflectivity reflector
DE102016101442B4 (de) 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
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