WO2010150994A3 - 파장변환물질층을 구비하는 발광 다이오드 및 이의 제조방법 - Google Patents

파장변환물질층을 구비하는 발광 다이오드 및 이의 제조방법 Download PDF

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Publication number
WO2010150994A3
WO2010150994A3 PCT/KR2010/003741 KR2010003741W WO2010150994A3 WO 2010150994 A3 WO2010150994 A3 WO 2010150994A3 KR 2010003741 W KR2010003741 W KR 2010003741W WO 2010150994 A3 WO2010150994 A3 WO 2010150994A3
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WO
WIPO (PCT)
Prior art keywords
light
emitting diode
wavelength conversion
conversion material
diode chip
Prior art date
Application number
PCT/KR2010/003741
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English (en)
French (fr)
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WO2010150994A9 (ko
WO2010150994A2 (ko
Inventor
이광철
김재필
송상빈
김상묵
Original Assignee
한국광기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국광기술원 filed Critical 한국광기술원
Priority to US13/376,714 priority Critical patent/US20120086040A1/en
Publication of WO2010150994A2 publication Critical patent/WO2010150994A2/ko
Publication of WO2010150994A3 publication Critical patent/WO2010150994A3/ko
Publication of WO2010150994A9 publication Critical patent/WO2010150994A9/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder

Abstract

파장변환물질층을 구비하는 발광 다이오드 및 이의 제조방법을 제공한다. 상기 발광다이오드는 베이스 구조물, 상기 베이스 구조물 상에 배치된 발광다이오드 칩 및 상기 발광다이오드 칩 상에 배치되며, 상기 발광다이오드 칩의 측면부에 인접한 영역에 비해 상부면에 인접한 영역이 두꺼운 파장변환물질층을 포함한다. 또한, 상기 발광다이오드 제조방법은 베이스 구조물 상에 발광다이오드 칩을 배치하는 단계 및 상기 발광다이오드 칩 상에 상기 발광다이오드 칩의 측면부에 인접한 영역에 비해 상부면에 인접한 영역이 두꺼운 투광성 광경화 물질을 함유한 파장변환물질층을 배치하는 단계를 포함한다.
PCT/KR2010/003741 2009-06-23 2010-06-10 파장변환물질층을 구비하는 발광 다이오드 및 이의 제조방법 WO2010150994A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/376,714 US20120086040A1 (en) 2009-06-23 2010-06-10 Light-emitting diode having a wavelength conversion material layer, and method for fabricating same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0055755 2009-06-23
KR1020090055755A KR100963743B1 (ko) 2009-06-23 2009-06-23 파장변환물질층을 구비하는 발광 다이오드 및 이의 제조방법

Publications (3)

Publication Number Publication Date
WO2010150994A2 WO2010150994A2 (ko) 2010-12-29
WO2010150994A3 true WO2010150994A3 (ko) 2011-03-03
WO2010150994A9 WO2010150994A9 (ko) 2011-06-03

Family

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PCT/KR2010/003741 WO2010150994A2 (ko) 2009-06-23 2010-06-10 파장변환물질층을 구비하는 발광 다이오드 및 이의 제조방법

Country Status (3)

Country Link
US (1) US20120086040A1 (ko)
KR (1) KR100963743B1 (ko)
WO (1) WO2010150994A2 (ko)

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WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101179288B1 (ko) 2011-04-08 2012-09-03 이상근 경사발광면이 형성된 에폭시반사부가 구비된 엘이디 조명체
DE102012106859B4 (de) * 2012-07-27 2019-01-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines mehrfarbigen LED-Displays
JP2014224182A (ja) * 2013-05-15 2014-12-04 株式会社東芝 蛍光体、発光装置、および蛍光体の製造方法
CN106063378B (zh) * 2014-03-05 2018-04-03 Lg电子株式会社 使用半导体发光器件的显示器件
WO2016014762A1 (en) * 2014-07-23 2016-01-28 Crystal Is, Inc. Photon extraction from ultraviolet light-emitting devices
KR101647068B1 (ko) * 2014-10-27 2016-08-10 주식회사 세미콘라이트 반도체 발광소자 및 이를 제조하는 방법
KR101648971B1 (ko) 2015-04-17 2016-08-19 한국광기술원 칩 레벨 막 형성모듈
US11094530B2 (en) 2019-05-14 2021-08-17 Applied Materials, Inc. In-situ curing of color conversion layer
US11239213B2 (en) * 2019-05-17 2022-02-01 Applied Materials, Inc. In-situ curing of color conversion layer in recess
CN110311055A (zh) * 2019-07-26 2019-10-08 马鞍山微晶光电材料有限公司 一种复合发光基片及其制备方法和应用
GB2600979B (en) * 2020-11-13 2023-01-11 Plessey Semiconductors Ltd Filter for micro LED display
TWI767594B (zh) * 2021-03-03 2022-06-11 達運精密工業股份有限公司 顯示裝置

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Also Published As

Publication number Publication date
KR100963743B1 (ko) 2010-06-14
US20120086040A1 (en) 2012-04-12
WO2010150994A9 (ko) 2011-06-03
WO2010150994A2 (ko) 2010-12-29

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