JP2011507272A - 簡易な光抽出方式の下方変換発光ダイオード - Google Patents
簡易な光抽出方式の下方変換発光ダイオード Download PDFInfo
- Publication number
- JP2011507272A JP2011507272A JP2010538013A JP2010538013A JP2011507272A JP 2011507272 A JP2011507272 A JP 2011507272A JP 2010538013 A JP2010538013 A JP 2010538013A JP 2010538013 A JP2010538013 A JP 2010538013A JP 2011507272 A JP2011507272 A JP 2011507272A
- Authority
- JP
- Japan
- Prior art keywords
- led
- wafer
- wavelength converter
- light
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000605 extraction Methods 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 claims abstract description 96
- 238000006243 chemical reaction Methods 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 127
- 239000000758 substrate Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 2
- 238000000149 argon plasma sintering Methods 0.000 claims 4
- 239000000463 material Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 16
- 238000005538 encapsulation Methods 0.000 description 10
- 239000002105 nanoparticle Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000000872 buffer Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- -1 band gaps Substances 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
Abstract
【選択図】図1
Description
Claims (24)
- 波長変換発光ダイオード(LED)装置であって、
出力表面を有するLEDと、
前記LEDと光学的に接合する多層半導体波長コンバータと、
を含み、少なくとも前記LED及び前記波長コンバータのうちの1つに光抽出機能が設けられた、装置。 - 前記光抽出機能がテクスチャ処理表面を含む、請求項1に記載の装置。
- 前記テクスチャ処理表面が前記LEDの表面である、請求項2に記載の装置。
- 前記テクスチャ処理表面が前記波長コンバータの表面である、請求項2に記載の装置。
- 前記光抽出機能が複数の光散乱粒子を含む、請求項1に記載の装置。
- 前記LEDが前記光散乱粒子を含む、請求項5に記載の装置。
- 前記波長コンバータが前記光散乱粒子を含む、請求項5に記載の装置。
- 前記波長コンバータが前記LEDに直接接合する、請求項1に記載の装置。
- 前記波長コンバータがエバネッセント接合層を介して前記LEDに接合する、請求項1に記載の装置。
- 前記LEDが、LED基材に付着するLED半導体層を含み、前記光抽出機能が、少なくともLED半導体層及び前記LED基材のうちの1つに設けられる、請求項1に記載の装置。
- 前記LED半導体層が金属層を介して前記LED基材に付着し、前記光抽出機能が、前記金属層に近接する前記LED半導体層の側面に位置する、請求項10に記載の装置。
- 前記光抽出機能が、前記装置内の物質インターフェースのエバネッセント連結距離内に設けられる、請求項1に記載の装置。
- 波長変換発光ダイオードを作製する方法であって、
基材上に配置される一組のLED半導体層を含む発光ダイオード(LED)ウエハーを提供する工程と、
前記LED層内で発生する光の波長の変換に効果的であるように構成される多層半導体波長コンバータウエハーを提供する工程と、
前記コンバータウエハーを前記LEDウエハーと光学的に接合してLED/コンバータウエハーを作製する工程と、
前記LED/コンバータウエハーから個々の変換LEDダイを分離する工程と、
を含む、波長変換LEDを作製する方法。 - 前記コンバータウエハーを前記LEDウエハーに光学的に接合する工程が、前記波長コンバータウエハーを前記LEDウエハーに直接接合することを含む、請求項13に記載の方法。
- 前記コンバータウエハーを前記LEDウエハーに光学的に接合する工程が、前記波長コンバータウエハーをエバネッセント接合層を介して前記LEDウエハーに接合することを含む、請求項13に記載の方法。
- 光抽出機能を前記LEDウエハー及び前記波長コンバータウエハーのうちの1つに提供する工程を更に含む、請求項13に記載の方法。
- 前記光抽出機能を提供する工程が、前記LEDウエハー及び前記波長コンバータウエハーのうちの1つにテクスチャ処理表面を提供することを含む、請求項16に記載の方法。
- 前記光抽出機能を提供する工程が、前記LEDウエハー及び前記波長コンバータウエハーのうちの1つ内に光散乱粒子を提供することを含む、請求項16に記載の方法。
- 半導体波長コンバータ装置であって、
光抽出機能を備える多層半導体波長コンバータと、
第一側面上に取り外し可能な保護層と、
を含み、第二側面が、別の半導体要素に光学的に接合するために平坦である、装置。 - 前記コンバータウエハーを前記LEDウエハーに光学的に接合する工程が、前記波長コンバータウエハーを前記LEDウエハーに直接接合することを含む、請求項19に記載の装置。
- 前記光抽出機能がテクスチャ処理表面を含む、請求項19に記載の装置。
- 前記光抽出機能が散乱層を含む、請求項19に記載の装置。
- 前記光抽出機能が前記波長コンバータの第一側面上に設けられる、請求項19に記載の装置。
- 前記光抽出機能が前記波長コンバータの第二側面上に設けられる、請求項19に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1260407P | 2007-12-10 | 2007-12-10 | |
PCT/US2008/082766 WO2009075972A2 (en) | 2007-12-10 | 2008-11-07 | Down-converted light emitting diode with simplified light extraction |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011507272A true JP2011507272A (ja) | 2011-03-03 |
JP2011507272A5 JP2011507272A5 (ja) | 2011-12-22 |
Family
ID=40756057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010538013A Pending JP2011507272A (ja) | 2007-12-10 | 2008-11-07 | 簡易な光抽出方式の下方変換発光ダイオード |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100295075A1 (ja) |
EP (1) | EP2232591A4 (ja) |
JP (1) | JP2011507272A (ja) |
KR (1) | KR20100097205A (ja) |
CN (1) | CN101897038B (ja) |
TW (1) | TWI453943B (ja) |
WO (1) | WO2009075972A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014507811A (ja) * | 2011-03-23 | 2014-03-27 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光半導体部品 |
JP2019508732A (ja) * | 2016-01-27 | 2019-03-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 変換要素、および、このタイプの変換要素を備えた放射放出半導体装置 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101911318A (zh) * | 2007-12-28 | 2010-12-08 | 3M创新有限公司 | 发射均匀波长的下变换光源 |
CN102124583B (zh) * | 2008-06-26 | 2013-06-19 | 3M创新有限公司 | 半导体光转换构造 |
KR20110030630A (ko) | 2008-06-26 | 2011-03-23 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 반도체 광 변환 구조물 |
EP2380217A2 (en) | 2008-12-24 | 2011-10-26 | 3M Innovative Properties Company | Method of making double-sided wavelength converter and light generating device using same |
WO2010074987A2 (en) | 2008-12-24 | 2010-07-01 | 3M Innovative Properties Company | Light generating device having double-sided wavelength converter |
DE102009020127A1 (de) * | 2009-03-25 | 2010-09-30 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
DE102009023351A1 (de) | 2009-05-29 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
DE102009048401A1 (de) * | 2009-10-06 | 2011-04-07 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
DE102010008605A1 (de) * | 2010-02-19 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronisches Bauteil |
CN102270724B (zh) * | 2010-06-01 | 2014-04-09 | 陈文彬 | 发光二极管晶片级色彩纯化的方法 |
TW201208143A (en) * | 2010-08-06 | 2012-02-16 | Semileds Optoelectronics Co | White LED device and manufacturing method thereof |
CN102593269A (zh) * | 2011-01-11 | 2012-07-18 | 旭明光电股份有限公司 | 白光led装置及其制造方法 |
TWI466343B (zh) * | 2012-01-06 | 2014-12-21 | Phostek Inc | 發光二極體裝置 |
US10386559B2 (en) | 2013-03-29 | 2019-08-20 | Signify Holding B.V. | Light emitting device comprising wavelength converter |
JP2015072751A (ja) * | 2013-10-01 | 2015-04-16 | 株式会社ジャパンディスプレイ | 有機el表示装置 |
DE112015000511B4 (de) | 2014-01-27 | 2023-01-05 | Osram Sylvania Inc. | Keramischer Wellenlängenumwandler mit einem hochreflektierenden Reflektor |
US9529969B2 (en) * | 2014-01-27 | 2016-12-27 | RDFISolutions, LLC | Event based tracking, health management, and patient and treatment monitoring system |
CN106410006B (zh) * | 2016-06-22 | 2018-08-17 | 厦门乾照光电股份有限公司 | 一种集成可见光指示装置的紫外发光二极管及其生产方法 |
DE102016113002B4 (de) * | 2016-07-14 | 2022-09-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen |
DE102018101089A1 (de) * | 2018-01-18 | 2019-07-18 | Osram Opto Semiconductors Gmbh | Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001257379A (ja) * | 2000-03-10 | 2001-09-21 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP2003124504A (ja) * | 2001-10-18 | 2003-04-25 | Toshiba Corp | 半導体発光装置、および半導体発光装置の製造方法 |
JP2004214592A (ja) * | 2003-01-02 | 2004-07-29 | Epitech Technology Corp | 混色発光ダイオード |
JP2006005367A (ja) * | 2004-06-03 | 2006-01-05 | Lumileds Lighting Us Llc | 発光デバイスのための発光セラミック |
WO2006062588A1 (en) * | 2004-12-09 | 2006-06-15 | 3M Innovative Properties Company | Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3739217A (en) * | 1969-06-23 | 1973-06-12 | Bell Telephone Labor Inc | Surface roughening of electroluminescent diodes |
US6252896B1 (en) * | 1999-03-05 | 2001-06-26 | Agilent Technologies, Inc. | Long-Wavelength VCSEL using buried bragg reflectors |
WO2001041225A2 (en) * | 1999-12-03 | 2001-06-07 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
US6987613B2 (en) * | 2001-03-30 | 2006-01-17 | Lumileds Lighting U.S., Llc | Forming an optical element on the surface of a light emitting device for improved light extraction |
WO2002084631A1 (fr) * | 2001-04-11 | 2002-10-24 | Sony Corporation | Procede de transfert d'element, procede de disposition d'element mettant en oeuvre ce procede et procede de production d'un appareil d'affichage d'image |
US6954478B2 (en) * | 2002-02-04 | 2005-10-11 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor laser device |
JP5719493B2 (ja) * | 2003-12-09 | 2015-05-20 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 表面粗化による高効率の(B,Al,Ga,In)Nベースの発光ダイオード |
JP2005277374A (ja) * | 2004-02-26 | 2005-10-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
EP2426743B1 (en) * | 2004-10-22 | 2019-02-20 | Seoul Viosys Co., Ltd | GaN compound semiconductor light emitting element and method of manufacturing the same |
US7045375B1 (en) * | 2005-01-14 | 2006-05-16 | Au Optronics Corporation | White light emitting device and method of making same |
JP2006310721A (ja) * | 2005-03-28 | 2006-11-09 | Yokohama National Univ | 自発光デバイス |
JP2007109792A (ja) * | 2005-10-12 | 2007-04-26 | Sony Corp | 半導体発光素子および波長変換基板 |
WO2007053624A2 (en) * | 2005-10-31 | 2007-05-10 | Trustees Of Boston University | Optical devices featuring textured semiconductor layers |
US7791271B2 (en) * | 2006-02-24 | 2010-09-07 | Global Oled Technology Llc | Top-emitting OLED device with light-scattering layer and color-conversion |
CN101395728B (zh) * | 2006-03-10 | 2011-04-13 | 松下电工株式会社 | 发光元件及其制造方法 |
US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
US7863634B2 (en) * | 2006-06-12 | 2011-01-04 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and reflector |
US7902542B2 (en) * | 2006-06-14 | 2011-03-08 | 3M Innovative Properties Company | Adapted LED device with re-emitting semiconductor construction |
US7627017B2 (en) * | 2006-08-25 | 2009-12-01 | Stc. Unm | Laser amplifier and method of making the same |
US9018619B2 (en) * | 2006-10-09 | 2015-04-28 | Cree, Inc. | Quantum wells for light conversion |
JP2008153634A (ja) * | 2006-11-24 | 2008-07-03 | Sony Corp | 発光ダイオードの製造方法、発光ダイオード、光源セルユニット、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器 |
JP2010541295A (ja) * | 2007-10-08 | 2010-12-24 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体波長コンバータが接合された発光ダイオード |
-
2008
- 2008-11-07 EP EP08858541.9A patent/EP2232591A4/en not_active Withdrawn
- 2008-11-07 WO PCT/US2008/082766 patent/WO2009075972A2/en active Application Filing
- 2008-11-07 KR KR1020107015078A patent/KR20100097205A/ko not_active Application Discontinuation
- 2008-11-07 US US12/746,898 patent/US20100295075A1/en not_active Abandoned
- 2008-11-07 CN CN2008801200474A patent/CN101897038B/zh not_active Expired - Fee Related
- 2008-11-07 JP JP2010538013A patent/JP2011507272A/ja active Pending
- 2008-11-24 TW TW097145372A patent/TWI453943B/zh not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001257379A (ja) * | 2000-03-10 | 2001-09-21 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP2003124504A (ja) * | 2001-10-18 | 2003-04-25 | Toshiba Corp | 半導体発光装置、および半導体発光装置の製造方法 |
JP2004214592A (ja) * | 2003-01-02 | 2004-07-29 | Epitech Technology Corp | 混色発光ダイオード |
JP2006005367A (ja) * | 2004-06-03 | 2006-01-05 | Lumileds Lighting Us Llc | 発光デバイスのための発光セラミック |
WO2006062588A1 (en) * | 2004-12-09 | 2006-06-15 | 3M Innovative Properties Company | Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission |
JP2008523615A (ja) * | 2004-12-09 | 2008-07-03 | スリーエム イノベイティブ プロパティズ カンパニー | 多色、広帯域または「白色」発光用の適合型短波長led |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014507811A (ja) * | 2011-03-23 | 2014-03-27 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光半導体部品 |
KR101515319B1 (ko) | 2011-03-23 | 2015-04-24 | 오스람 옵토 세미컨덕터스 게엠베하 | 발광 반도체 소자 |
US9331243B2 (en) | 2011-03-23 | 2016-05-03 | Osram Opto Semiconductors Gmbh | Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies |
US9853186B2 (en) | 2011-03-23 | 2017-12-26 | Osram Opto Semiconductors Gmbh | Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies |
JP2019508732A (ja) * | 2016-01-27 | 2019-03-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 変換要素、および、このタイプの変換要素を備えた放射放出半導体装置 |
US11557698B2 (en) | 2016-01-27 | 2023-01-17 | Osram Oled Gmbh | Conversion element and radiation-emitting semiconductor device comprising a conversion element of said type |
Also Published As
Publication number | Publication date |
---|---|
WO2009075972A3 (en) | 2009-08-20 |
TW200939538A (en) | 2009-09-16 |
CN101897038B (zh) | 2012-08-29 |
US20100295075A1 (en) | 2010-11-25 |
TWI453943B (zh) | 2014-09-21 |
CN101897038A (zh) | 2010-11-24 |
KR20100097205A (ko) | 2010-09-02 |
WO2009075972A2 (en) | 2009-06-18 |
EP2232591A2 (en) | 2010-09-29 |
EP2232591A4 (en) | 2013-12-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2011507272A (ja) | 簡易な光抽出方式の下方変換発光ダイオード | |
US20100283074A1 (en) | Light emitting diode with bonded semiconductor wavelength converter | |
US10461230B2 (en) | Light emitting diode component | |
EP2453490B1 (en) | Light emitting devices with improved light extraction efficiency | |
US20080035944A1 (en) | Radiation emitting element | |
JP2007214260A (ja) | 半導体発光素子およびその製造方法 | |
TW200807768A (en) | LED device with re-emitting semiconductor construction and converging optical element | |
WO2015112943A1 (en) | Led device with bragg reflector and method of singulating led wafer substrates into dice with same | |
US20110140129A1 (en) | Light source with improved monochromaticity | |
US8193543B2 (en) | Monochromatic light source with high aspect ratio | |
US11289534B2 (en) | Component having semiconductor bodies electrically conductively connected via a transition zone | |
Horng et al. | Recent development of fabrication technologies of nitride LEDs for performance improvement | |
Horng et al. | Fabrication of nitride LEDs |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111031 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111031 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130319 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130813 |