JP2014525682A - オプトエレクトロニクス部品 - Google Patents
オプトエレクトロニクス部品 Download PDFInfo
- Publication number
- JP2014525682A JP2014525682A JP2014527662A JP2014527662A JP2014525682A JP 2014525682 A JP2014525682 A JP 2014525682A JP 2014527662 A JP2014527662 A JP 2014527662A JP 2014527662 A JP2014527662 A JP 2014527662A JP 2014525682 A JP2014525682 A JP 2014525682A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- quantum well
- optoelectronic device
- well structure
- structural elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 53
- 230000004888 barrier function Effects 0.000 claims abstract description 58
- 229910052738 indium Inorganic materials 0.000 claims description 21
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 19
- 239000010410 layer Substances 0.000 description 310
- 239000004065 semiconductor Substances 0.000 description 33
- 238000005253 cladding Methods 0.000 description 25
- 239000000463 material Substances 0.000 description 23
- 230000000737 periodic effect Effects 0.000 description 19
- 230000006798 recombination Effects 0.000 description 13
- 238000005215 recombination Methods 0.000 description 13
- -1 nitride compound Chemical class 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000012792 core layer Substances 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
本特許出願は、独国特許出願第102011112706.6号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
Claims (15)
- 活性層(10)を有するオプトエレクトロニクスデバイス(11)であって、前記活性層(10)が、横方向に互いに隔てられている多数の構造要素(6)を備えており、前記構造要素(6)それぞれが量子井戸構造(5)を有し、前記量子井戸構造(5)が、Inx1Aly1Ga1−x1−y1N(0≦x1≦1、0≦y1≦1、x1+y1≦1)から構成される少なくとも1層の障壁層(2)と、Inx2Aly2Ga1−x2−y2N(0≦x2≦1、0≦y2≦1、x2+y2≦1)から構成される少なくとも1層の量子井戸層(1)とを備えている、
オプトエレクトロニクスデバイス(11)。 - 前記量子井戸構造(5)が、InxAl1−xN(0≦x≦0.6)から構成されている複数の中間層(3)を備えている、
請求項1に記載のオプトエレクトロニクスデバイス。 - 前記中間層(3)のインジウム含有量xに関して、0.09≦x≦0.27が成り立つ、
請求項2に記載のオプトエレクトロニクスデバイス。 - 前記中間層(3)が、1.5nm未満の厚さを有する、
請求項2または請求項3に記載のオプトエレクトロニクスデバイス。 - 前記構造要素(6)が、少なくとも特定の領域において、円柱、平行六面体、角柱、角錐、または角錐台の形状を有する、
請求項1から請求項4のいずれかに記載のオプトエレクトロニクスデバイス。 - 前記構造要素(6)が、少なくとも特定の領域において、六角錐、六角錐台、または六角柱の形状を有する、
請求項1から請求項5のいずれかに記載のオプトエレクトロニクスデバイス。 - 前記構造要素(6)が、20μm以下の幅を有する、
請求項1から請求項6のいずれかに記載のオプトエレクトロニクスデバイス。 - 前記構造要素(6)が、5nm〜5μmの範囲内(両端値を含む)の幅を有する、
請求項1から請求項7のいずれかに記載のオプトエレクトロニクスデバイス。 - 前記オプトエレクトロニクスデバイス(11)にマスク層(9)が配置されており、前記構造要素(6)それぞれが前記マスク層(9)における開口部の中に配置されている、
請求項1から請求項8のいずれかに記載のオプトエレクトロニクスデバイス。 - 前記少なくとも1層の障壁層(2)もしくは前記少なくとも1層の量子井戸層(1)またはその両方が、InxAl1−xN(0≦x≦0.35)を含んでいる、
請求項1から請求項9のいずれかに記載のオプトエレクトロニクスデバイス。 - 前記障壁層(2)もしくは前記量子井戸層(1)またはその両方のインジウム含有量xに関して、0.09≦x≦0.27が成り立つ、
請求項10に記載のオプトエレクトロニクスデバイス。 - 前記構造要素(6)それぞれが、前記量子井戸構造(5)を含んでいる積層体を有し、前記積層体の層が、これらが横方向に重なり合わないように互いに上下に配置されている、
請求項1から請求項11のいずれかに記載のオプトエレクトロニクスデバイス。 - 横方向に互いに隔てられている構造要素(6)の間に、電気的絶縁層(9)が配置されている、
請求項12に記載のオプトエレクトロニクスデバイス。 - 前記構造要素(6)それぞれが、前記量子井戸構造(5)を含んでいる積層体を有し、下層の上に配置されている前記積層体の層が、前記下層の層をその側面を含めて全体的に覆っているように、前記積層体の層が互いに上下に配置されている、
請求項1から請求項11のいずれかに記載のオプトエレクトロニクスデバイス。 - 透明導電性酸化物から構成されている層(12)が前記活性層(10)に形成されており、透明導電性酸化物から構成されている前記層(12)が、前記多数の前記構造要素(6)のための共通の電気コンタクトを形成している、
請求項1から請求項14のいずれかに記載のオプトエレクトロニクスデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011112706.6 | 2011-09-07 | ||
DE102011112706.6A DE102011112706B4 (de) | 2011-09-07 | 2011-09-07 | Optoelektronisches Bauelement |
PCT/EP2012/066897 WO2013034485A1 (de) | 2011-09-07 | 2012-08-30 | Optoelektronisches bauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014525682A true JP2014525682A (ja) | 2014-09-29 |
JP6111250B2 JP6111250B2 (ja) | 2017-04-05 |
Family
ID=46755012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014527662A Active JP6111250B2 (ja) | 2011-09-07 | 2012-08-30 | オプトエレクトロニクス部品 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9059353B2 (ja) |
JP (1) | JP6111250B2 (ja) |
KR (1) | KR101909961B1 (ja) |
CN (1) | CN103782398B (ja) |
DE (1) | DE102011112706B4 (ja) |
TW (1) | TWI491069B (ja) |
WO (1) | WO2013034485A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11804570B2 (en) * | 2017-07-24 | 2023-10-31 | The Regents Of The University Of Michigan | Core-shell InGaN/AlGaN quantum nanowire photonic structures |
DE102015104700A1 (de) | 2015-03-27 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102016102876A1 (de) * | 2016-02-18 | 2017-08-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
DE102016104616B4 (de) * | 2016-03-14 | 2021-09-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlichtquelle |
CN105762264B (zh) * | 2016-04-28 | 2018-01-26 | 厦门乾照光电股份有限公司 | 一种具有倒梯形圆台体的微米线发光二极管 |
US10480719B2 (en) * | 2016-08-16 | 2019-11-19 | King Abdullah University Of Science And Technology | Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications |
CN110707191B (zh) * | 2019-10-22 | 2021-11-16 | 錼创显示科技股份有限公司 | 微型发光二极管晶粒及微型发光二极管晶圆 |
TWI712180B (zh) | 2019-10-22 | 2020-12-01 | 錼創顯示科技股份有限公司 | 微型發光二極體晶粒及微型發光二極體晶圓 |
US11699775B2 (en) * | 2020-01-22 | 2023-07-11 | Samsung Electronics Co.. Ltd. | Semiconductor LED and method of manufacturing the same |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001237456A (ja) * | 2000-02-21 | 2001-08-31 | Nichia Chem Ind Ltd | 発光素子 |
JP2003218393A (ja) * | 2002-01-17 | 2003-07-31 | Sony Corp | 選択成長方法、半導体発光素子及びその製造方法 |
JP2007027298A (ja) * | 2005-07-14 | 2007-02-01 | Matsushita Electric Works Ltd | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
JP2007519214A (ja) * | 2003-08-08 | 2007-07-12 | バイケル インク | 高輝度の窒化物マイクロ発光ダイオード及びその製造方法 |
US20100259184A1 (en) * | 2006-02-24 | 2010-10-14 | Ryou Kato | Light-emitting device |
US20110089399A1 (en) * | 2009-10-09 | 2011-04-21 | The Regents Of The University Of California | Light emitting device with a stair quantum well structure |
WO2011067872A1 (ja) * | 2009-12-01 | 2011-06-09 | 国立大学法人北海道大学 | 発光素子およびその製造方法 |
JP2011151275A (ja) * | 2010-01-22 | 2011-08-04 | Nec Corp | 窒化物半導体発光素子および電子装置 |
WO2011105397A1 (ja) * | 2010-02-25 | 2011-09-01 | 国立大学法人北海道大学 | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4952527A (en) * | 1988-02-19 | 1990-08-28 | Massachusetts Institute Of Technology | Method of making buffer layers for III-V devices using solid phase epitaxy |
US5332918A (en) * | 1988-02-19 | 1994-07-26 | Massachusetts Institute Of Technology | Ultra-high-speed photoconductive devices using semi-insulating layers |
US5262360A (en) * | 1990-12-31 | 1993-11-16 | The Board Of Trustees Of The University Of Illinois | AlGaAs native oxide |
FR2675634A1 (fr) * | 1991-04-16 | 1992-10-23 | France Telecom | Dispositif optoelectronique a tres faible capacite parasite. |
US5615143A (en) * | 1994-09-19 | 1997-03-25 | Cornell Research Foundation, Inc. | Optomechanical terabit data storage system |
GB9807692D0 (en) * | 1998-04-14 | 1998-06-10 | Univ Strathclyde | Optival devices |
JP2003218395A (ja) * | 2002-01-18 | 2003-07-31 | Sony Corp | 半導体発光素子、半導体レーザ素子及びこれを用いた発光装置 |
JP2005302784A (ja) * | 2004-04-06 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
US20080163814A1 (en) * | 2006-12-12 | 2008-07-10 | The Regents Of The University Of California | CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES |
KR100670531B1 (ko) * | 2004-08-26 | 2007-01-16 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
WO2006060599A2 (en) * | 2004-12-02 | 2006-06-08 | The Regents Of The University Of California | Semiconductor devices based on coalesced nano-rod arrays |
KR100658938B1 (ko) * | 2005-05-24 | 2006-12-15 | 엘지전자 주식회사 | 나노 로드를 갖는 발광 소자 및 그의 제조 방법 |
JP4740795B2 (ja) | 2005-05-24 | 2011-08-03 | エルジー エレクトロニクス インコーポレイティド | ロッド型発光素子及びその製造方法 |
WO2009009612A2 (en) * | 2007-07-09 | 2009-01-15 | Nanocrystal, Llc | Growth of self-assembled gan nanowires and application in nitride semiconductor bulk material |
WO2009045341A1 (en) * | 2007-09-28 | 2009-04-09 | The Johns Hopkins University | Megahertz organic/polymer diodes and methods related thereto |
US7580595B1 (en) * | 2008-05-09 | 2009-08-25 | Technische Universitaet Berlin | Data transmission optoelectric device |
US8084763B2 (en) | 2008-10-31 | 2011-12-27 | The Regents Of The University Of California | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys |
KR101603777B1 (ko) * | 2009-04-16 | 2016-03-15 | 삼성전자주식회사 | 백색 발광 다이오드 |
US20110103418A1 (en) * | 2009-11-03 | 2011-05-05 | The Regents Of The University Of California | Superluminescent diodes by crystallographic etching |
US8907321B2 (en) | 2009-12-16 | 2014-12-09 | Lehigh Univeristy | Nitride based quantum well light-emitting devices having improved current injection efficiency |
-
2011
- 2011-09-07 DE DE102011112706.6A patent/DE102011112706B4/de active Active
-
2012
- 2012-08-30 US US14/240,433 patent/US9059353B2/en active Active
- 2012-08-30 KR KR1020147009051A patent/KR101909961B1/ko active IP Right Grant
- 2012-08-30 CN CN201280043632.5A patent/CN103782398B/zh active Active
- 2012-08-30 JP JP2014527662A patent/JP6111250B2/ja active Active
- 2012-08-30 WO PCT/EP2012/066897 patent/WO2013034485A1/de active Application Filing
- 2012-09-05 TW TW101132247A patent/TWI491069B/zh active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001237456A (ja) * | 2000-02-21 | 2001-08-31 | Nichia Chem Ind Ltd | 発光素子 |
JP2003218393A (ja) * | 2002-01-17 | 2003-07-31 | Sony Corp | 選択成長方法、半導体発光素子及びその製造方法 |
JP2007519214A (ja) * | 2003-08-08 | 2007-07-12 | バイケル インク | 高輝度の窒化物マイクロ発光ダイオード及びその製造方法 |
JP2007027298A (ja) * | 2005-07-14 | 2007-02-01 | Matsushita Electric Works Ltd | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
US20100259184A1 (en) * | 2006-02-24 | 2010-10-14 | Ryou Kato | Light-emitting device |
US20110089399A1 (en) * | 2009-10-09 | 2011-04-21 | The Regents Of The University Of California | Light emitting device with a stair quantum well structure |
WO2011067872A1 (ja) * | 2009-12-01 | 2011-06-09 | 国立大学法人北海道大学 | 発光素子およびその製造方法 |
JP2011151275A (ja) * | 2010-01-22 | 2011-08-04 | Nec Corp | 窒化物半導体発光素子および電子装置 |
WO2011105397A1 (ja) * | 2010-02-25 | 2011-09-01 | 国立大学法人北海道大学 | 半導体装置及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20140057657A (ko) | 2014-05-13 |
US20140286369A1 (en) | 2014-09-25 |
DE102011112706B4 (de) | 2021-09-02 |
WO2013034485A1 (de) | 2013-03-14 |
JP6111250B2 (ja) | 2017-04-05 |
CN103782398B (zh) | 2017-09-01 |
TWI491069B (zh) | 2015-07-01 |
KR101909961B1 (ko) | 2018-10-19 |
TW201320391A (zh) | 2013-05-16 |
DE102011112706A1 (de) | 2013-03-07 |
US9059353B2 (en) | 2015-06-16 |
CN103782398A (zh) | 2014-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6111250B2 (ja) | オプトエレクトロニクス部品 | |
EP2843714B1 (en) | Semiconductor light emitting device including hole injection layer and method of fabricating the same. | |
US7084420B2 (en) | Nitride based semiconductor device | |
KR100604406B1 (ko) | 질화물 반도체 소자 | |
US10396240B2 (en) | III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same | |
US20130248817A1 (en) | White light emitting diode | |
TWI569467B (zh) | 半導體發光元件 | |
JP2010532926A (ja) | 放射線放出半導体ボディ | |
TWI425662B (zh) | 半導體發光裝置 | |
KR101199677B1 (ko) | 반도체 발광 소자 및 그 제조 방법 | |
JP2012222362A (ja) | 窒化物半導体発光素子 | |
KR101389348B1 (ko) | 질화갈륨계 반도체 발광소자 | |
KR20110046017A (ko) | 발광 소자 | |
KR20130078345A (ko) | 스트레인 완충층을 이용하여 발광효율이 우수한 질화물계 발광소자 | |
KR100558455B1 (ko) | 질화물 반도체 소자 | |
KR20140017443A (ko) | 반도체 발광 소자 및 그 제조 방법 | |
US8704268B2 (en) | Semiconductor light emitting device | |
KR101034211B1 (ko) | 수직형 발광소자 | |
KR101043345B1 (ko) | 질화물 반도체 소자 | |
KR20110081033A (ko) | 스페이서층을 가지는 발광 다이오드 | |
KR20090056319A (ko) | 초격자 구조를 가지는 질화물계 반도체 발광소자 | |
KR20110091246A (ko) | 반도체 발광소자의 제조방법 및 이에 의해 제조된 반도체 발광소자 | |
KR20100060098A (ko) | 질화물 반도체 발광소자 | |
TWI420696B (zh) | 發光元件及其製造方法 | |
JP2022153201A (ja) | Iii族窒化物半導体素子とその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150121 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150127 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150414 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150708 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150818 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151109 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160628 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160909 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170307 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170313 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6111250 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |