JP2018510515A5 - - Google Patents
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- Publication number
- JP2018510515A5 JP2018510515A5 JP2017551300A JP2017551300A JP2018510515A5 JP 2018510515 A5 JP2018510515 A5 JP 2018510515A5 JP 2017551300 A JP2017551300 A JP 2017551300A JP 2017551300 A JP2017551300 A JP 2017551300A JP 2018510515 A5 JP2018510515 A5 JP 2018510515A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- etchant
- processing system
- plasma processing
- exposed surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 31
- 239000000758 substrate Substances 0.000 claims 24
- 230000004907 flux Effects 0.000 claims 10
- 150000002500 ions Chemical class 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 8
- 239000002356 single layer Substances 0.000 claims 8
- 238000001179 sorption measurement Methods 0.000 claims 5
- 238000003795 desorption Methods 0.000 claims 4
- 238000006243 chemical reaction Methods 0.000 claims 3
- 239000010410 layer Substances 0.000 claims 3
- 238000010926 purge Methods 0.000 claims 3
- 239000002099 adlayer Substances 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 239000003463 adsorbent Substances 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- -1 fluorocarbon compound Chemical class 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical class FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562139795P | 2015-03-30 | 2015-03-30 | |
| US62/139,795 | 2015-03-30 | ||
| PCT/US2016/024661 WO2016160778A1 (en) | 2015-03-30 | 2016-03-29 | Method for atomic layer etching |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018510515A JP2018510515A (ja) | 2018-04-12 |
| JP2018510515A5 true JP2018510515A5 (enExample) | 2019-05-09 |
| JP6532066B2 JP6532066B2 (ja) | 2019-06-19 |
Family
ID=55745829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017551300A Active JP6532066B2 (ja) | 2015-03-30 | 2016-03-29 | 原子層をエッチングする方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9881807B2 (enExample) |
| JP (1) | JP6532066B2 (enExample) |
| KR (1) | KR102510737B1 (enExample) |
| CN (1) | CN107431011B (enExample) |
| SG (1) | SG11201707998TA (enExample) |
| TW (1) | TWI621177B (enExample) |
| WO (1) | WO2016160778A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US10256108B2 (en) * | 2016-03-01 | 2019-04-09 | Lam Research Corporation | Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments |
| CN110050331B (zh) * | 2016-12-09 | 2023-07-25 | Asm Ip 控股有限公司 | 热原子层蚀刻工艺 |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| US10692724B2 (en) * | 2016-12-23 | 2020-06-23 | Lam Research Corporation | Atomic layer etching methods and apparatus |
| US10134600B2 (en) * | 2017-02-06 | 2018-11-20 | Lam Research Corporation | Dielectric contact etch |
| US9779956B1 (en) * | 2017-02-06 | 2017-10-03 | Lam Research Corporation | Hydrogen activated atomic layer etching |
| US11469079B2 (en) * | 2017-03-14 | 2022-10-11 | Lam Research Corporation | Ultrahigh selective nitride etch to form FinFET devices |
| US10483118B2 (en) * | 2017-05-11 | 2019-11-19 | Tokyo Electron Limited | Etching method |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US10504742B2 (en) * | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
| US10763083B2 (en) * | 2017-10-06 | 2020-09-01 | Lam Research Corporation | High energy atomic layer etching |
| JP2019102483A (ja) * | 2017-11-28 | 2019-06-24 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| JP6987172B2 (ja) * | 2017-11-28 | 2021-12-22 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| EP3776636B1 (en) | 2018-03-30 | 2025-05-07 | Lam Research Corporation | Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials |
| WO2019199922A1 (en) * | 2018-04-13 | 2019-10-17 | Mattson Technology, Inc. | Processing of workpieces with reactive species generated using alkyl halide |
| GB201810387D0 (en) * | 2018-06-25 | 2018-08-08 | Spts Technologies Ltd | Method of plasma etching |
| US10847375B2 (en) * | 2018-06-26 | 2020-11-24 | Lam Research Corporation | Selective atomic layer etching |
| US10720337B2 (en) * | 2018-07-20 | 2020-07-21 | Asm Ip Holding B.V. | Pre-cleaning for etching of dielectric materials |
| US11688586B2 (en) * | 2018-08-30 | 2023-06-27 | Tokyo Electron Limited | Method and apparatus for plasma processing |
| JP7737789B2 (ja) | 2019-07-18 | 2025-09-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 半導体処理システム用シャワーヘッドデバイス |
| US11043362B2 (en) * | 2019-09-17 | 2021-06-22 | Tokyo Electron Limited | Plasma processing apparatuses including multiple electron sources |
| JP7114554B2 (ja) | 2019-11-22 | 2022-08-08 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
| CN111370308B (zh) * | 2020-02-18 | 2023-03-21 | 中国科学院微电子研究所 | 一种刻蚀方法及系统、刻蚀控制装置、电子器件及设备 |
| JP7394665B2 (ja) * | 2020-03-11 | 2023-12-08 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US12176392B2 (en) | 2020-06-25 | 2024-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with silicide gate fill structure |
| JP7174016B2 (ja) * | 2020-07-16 | 2022-11-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| CN112366135B (zh) * | 2020-10-26 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 一种硅原子层刻蚀方法 |
| JP7739434B2 (ja) | 2021-02-03 | 2025-09-16 | ラム リサーチ コーポレーション | 原子層エッチングにおけるエッチング選択性の制御 |
| JP7511501B2 (ja) * | 2021-02-10 | 2024-07-05 | 東京エレクトロン株式会社 | プラズマ処理装置及び監視装置 |
| KR102654170B1 (ko) * | 2021-02-17 | 2024-04-04 | 대전대학교 산학협력단 | 액상 전구체를 이용한 원자층 식각 방법 |
| US20220301887A1 (en) * | 2021-03-16 | 2022-09-22 | Applied Materials, Inc. | Ruthenium etching process |
| US11664195B1 (en) | 2021-11-11 | 2023-05-30 | Velvetch Llc | DC plasma control for electron enhanced material processing |
| US11688588B1 (en) | 2022-02-09 | 2023-06-27 | Velvetch Llc | Electron bias control signals for electron enhanced material processing |
| WO2023188013A1 (ja) | 2022-03-29 | 2023-10-05 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置 |
| US11869747B1 (en) | 2023-01-04 | 2024-01-09 | Velvetch Llc | Atomic layer etching by electron wavefront |
| JP2024098769A (ja) | 2023-01-11 | 2024-07-24 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US20250201569A1 (en) * | 2023-12-14 | 2025-06-19 | Applied Materials, Inc. | Etching substrates using vapor adsorption |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6630201B2 (en) * | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
| US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| KR101080604B1 (ko) | 2010-02-09 | 2011-11-04 | 성균관대학교산학협력단 | 원자층 식각 장치 및 이를 이용한 식각 방법 |
| US9076646B2 (en) * | 2010-04-15 | 2015-07-07 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
| US9793126B2 (en) | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
| KR101380835B1 (ko) | 2011-07-22 | 2014-04-04 | 성균관대학교산학협력단 | 그래핀의 원자층 식각 방법 |
| US20130084707A1 (en) | 2011-09-30 | 2013-04-04 | Tokyo Electron Limited | Dry cleaning method for recovering etch process condition |
| CN103117216B (zh) * | 2011-11-17 | 2015-08-05 | 中芯国际集成电路制造(上海)有限公司 | 避免浅沟槽隔离结构产生缺角的半导体器件的制作方法 |
| US9330899B2 (en) * | 2012-11-01 | 2016-05-03 | Asm Ip Holding B.V. | Method of depositing thin film |
-
2016
- 2016-03-29 KR KR1020177030041A patent/KR102510737B1/ko active Active
- 2016-03-29 US US15/083,363 patent/US9881807B2/en active Active
- 2016-03-29 SG SG11201707998TA patent/SG11201707998TA/en unknown
- 2016-03-29 WO PCT/US2016/024661 patent/WO2016160778A1/en not_active Ceased
- 2016-03-29 CN CN201680020214.2A patent/CN107431011B/zh active Active
- 2016-03-29 JP JP2017551300A patent/JP6532066B2/ja active Active
- 2016-03-30 TW TW105109945A patent/TWI621177B/zh active
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