TWI621177B - 原子層蝕刻方法 - Google Patents
原子層蝕刻方法 Download PDFInfo
- Publication number
- TWI621177B TWI621177B TW105109945A TW105109945A TWI621177B TW I621177 B TWI621177 B TW I621177B TW 105109945 A TW105109945 A TW 105109945A TW 105109945 A TW105109945 A TW 105109945A TW I621177 B TWI621177 B TW I621177B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- etching
- etchant
- plasma processing
- processing system
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 93
- 238000005530 etching Methods 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 168
- 238000012545 processing Methods 0.000 claims abstract description 78
- 230000008569 process Effects 0.000 claims abstract description 50
- 230000004907 flux Effects 0.000 claims abstract description 33
- 150000002500 ions Chemical class 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 230000008878 coupling Effects 0.000 claims abstract description 8
- 238000010168 coupling process Methods 0.000 claims abstract description 8
- 238000005859 coupling reaction Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 76
- 239000007789 gas Substances 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 24
- 238000003795 desorption Methods 0.000 claims description 21
- 238000001179 sorption measurement Methods 0.000 claims description 21
- 150000003254 radicals Chemical class 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 2
- -1 fluorocarbon compound Chemical class 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- 239000003463 adsorbent Substances 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 239000002052 molecular layer Substances 0.000 abstract description 8
- 238000009826 distribution Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 230000006698 induction Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000000059 patterning Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000026030 halogenation Effects 0.000 description 3
- 238000005658 halogenation reaction Methods 0.000 description 3
- 239000013529 heat transfer fluid Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002099 adlayer Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 238000009931 pascalization Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562139795P | 2015-03-30 | 2015-03-30 | |
| US62/139,795 | 2015-03-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201643958A TW201643958A (zh) | 2016-12-16 |
| TWI621177B true TWI621177B (zh) | 2018-04-11 |
Family
ID=55745829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105109945A TWI621177B (zh) | 2015-03-30 | 2016-03-30 | 原子層蝕刻方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9881807B2 (enExample) |
| JP (1) | JP6532066B2 (enExample) |
| KR (1) | KR102510737B1 (enExample) |
| CN (1) | CN107431011B (enExample) |
| SG (1) | SG11201707998TA (enExample) |
| TW (1) | TWI621177B (enExample) |
| WO (1) | WO2016160778A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US10256108B2 (en) * | 2016-03-01 | 2019-04-09 | Lam Research Corporation | Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments |
| CN110050331B (zh) * | 2016-12-09 | 2023-07-25 | Asm Ip 控股有限公司 | 热原子层蚀刻工艺 |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| US10692724B2 (en) * | 2016-12-23 | 2020-06-23 | Lam Research Corporation | Atomic layer etching methods and apparatus |
| US10134600B2 (en) * | 2017-02-06 | 2018-11-20 | Lam Research Corporation | Dielectric contact etch |
| US9779956B1 (en) * | 2017-02-06 | 2017-10-03 | Lam Research Corporation | Hydrogen activated atomic layer etching |
| US11469079B2 (en) * | 2017-03-14 | 2022-10-11 | Lam Research Corporation | Ultrahigh selective nitride etch to form FinFET devices |
| US10483118B2 (en) * | 2017-05-11 | 2019-11-19 | Tokyo Electron Limited | Etching method |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US10504742B2 (en) * | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
| US10763083B2 (en) * | 2017-10-06 | 2020-09-01 | Lam Research Corporation | High energy atomic layer etching |
| JP2019102483A (ja) * | 2017-11-28 | 2019-06-24 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| JP6987172B2 (ja) * | 2017-11-28 | 2021-12-22 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| EP3776636B1 (en) | 2018-03-30 | 2025-05-07 | Lam Research Corporation | Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials |
| WO2019199922A1 (en) * | 2018-04-13 | 2019-10-17 | Mattson Technology, Inc. | Processing of workpieces with reactive species generated using alkyl halide |
| GB201810387D0 (en) * | 2018-06-25 | 2018-08-08 | Spts Technologies Ltd | Method of plasma etching |
| US10847375B2 (en) * | 2018-06-26 | 2020-11-24 | Lam Research Corporation | Selective atomic layer etching |
| US10720337B2 (en) * | 2018-07-20 | 2020-07-21 | Asm Ip Holding B.V. | Pre-cleaning for etching of dielectric materials |
| US11688586B2 (en) * | 2018-08-30 | 2023-06-27 | Tokyo Electron Limited | Method and apparatus for plasma processing |
| JP7737789B2 (ja) | 2019-07-18 | 2025-09-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 半導体処理システム用シャワーヘッドデバイス |
| US11043362B2 (en) * | 2019-09-17 | 2021-06-22 | Tokyo Electron Limited | Plasma processing apparatuses including multiple electron sources |
| JP7114554B2 (ja) | 2019-11-22 | 2022-08-08 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
| CN111370308B (zh) * | 2020-02-18 | 2023-03-21 | 中国科学院微电子研究所 | 一种刻蚀方法及系统、刻蚀控制装置、电子器件及设备 |
| JP7394665B2 (ja) * | 2020-03-11 | 2023-12-08 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US12176392B2 (en) | 2020-06-25 | 2024-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with silicide gate fill structure |
| JP7174016B2 (ja) * | 2020-07-16 | 2022-11-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| CN112366135B (zh) * | 2020-10-26 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 一种硅原子层刻蚀方法 |
| JP7739434B2 (ja) | 2021-02-03 | 2025-09-16 | ラム リサーチ コーポレーション | 原子層エッチングにおけるエッチング選択性の制御 |
| JP7511501B2 (ja) * | 2021-02-10 | 2024-07-05 | 東京エレクトロン株式会社 | プラズマ処理装置及び監視装置 |
| KR102654170B1 (ko) * | 2021-02-17 | 2024-04-04 | 대전대학교 산학협력단 | 액상 전구체를 이용한 원자층 식각 방법 |
| US20220301887A1 (en) * | 2021-03-16 | 2022-09-22 | Applied Materials, Inc. | Ruthenium etching process |
| US11664195B1 (en) | 2021-11-11 | 2023-05-30 | Velvetch Llc | DC plasma control for electron enhanced material processing |
| US11688588B1 (en) | 2022-02-09 | 2023-06-27 | Velvetch Llc | Electron bias control signals for electron enhanced material processing |
| WO2023188013A1 (ja) | 2022-03-29 | 2023-10-05 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置 |
| US11869747B1 (en) | 2023-01-04 | 2024-01-09 | Velvetch Llc | Atomic layer etching by electron wavefront |
| JP2024098769A (ja) | 2023-01-11 | 2024-07-24 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US20250201569A1 (en) * | 2023-12-14 | 2025-06-19 | Applied Materials, Inc. | Etching substrates using vapor adsorption |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| US20140113457A1 (en) * | 2010-04-15 | 2014-04-24 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
| US20150083582A1 (en) * | 2010-08-04 | 2015-03-26 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6630201B2 (en) * | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
| KR101080604B1 (ko) | 2010-02-09 | 2011-11-04 | 성균관대학교산학협력단 | 원자층 식각 장치 및 이를 이용한 식각 방법 |
| KR101380835B1 (ko) | 2011-07-22 | 2014-04-04 | 성균관대학교산학협력단 | 그래핀의 원자층 식각 방법 |
| US20130084707A1 (en) | 2011-09-30 | 2013-04-04 | Tokyo Electron Limited | Dry cleaning method for recovering etch process condition |
| CN103117216B (zh) * | 2011-11-17 | 2015-08-05 | 中芯国际集成电路制造(上海)有限公司 | 避免浅沟槽隔离结构产生缺角的半导体器件的制作方法 |
| US9330899B2 (en) * | 2012-11-01 | 2016-05-03 | Asm Ip Holding B.V. | Method of depositing thin film |
-
2016
- 2016-03-29 KR KR1020177030041A patent/KR102510737B1/ko active Active
- 2016-03-29 US US15/083,363 patent/US9881807B2/en active Active
- 2016-03-29 SG SG11201707998TA patent/SG11201707998TA/en unknown
- 2016-03-29 WO PCT/US2016/024661 patent/WO2016160778A1/en not_active Ceased
- 2016-03-29 CN CN201680020214.2A patent/CN107431011B/zh active Active
- 2016-03-29 JP JP2017551300A patent/JP6532066B2/ja active Active
- 2016-03-30 TW TW105109945A patent/TWI621177B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| US20140113457A1 (en) * | 2010-04-15 | 2014-04-24 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
| US20150083582A1 (en) * | 2010-08-04 | 2015-03-26 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180036646A (ko) | 2018-04-09 |
| TW201643958A (zh) | 2016-12-16 |
| US9881807B2 (en) | 2018-01-30 |
| JP2018510515A (ja) | 2018-04-12 |
| CN107431011A (zh) | 2017-12-01 |
| JP6532066B2 (ja) | 2019-06-19 |
| SG11201707998TA (en) | 2017-10-30 |
| KR102510737B1 (ko) | 2023-03-15 |
| WO2016160778A1 (en) | 2016-10-06 |
| US20160293432A1 (en) | 2016-10-06 |
| CN107431011B (zh) | 2021-08-24 |
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