CN107431011B - 用于原子层蚀刻的方法 - Google Patents

用于原子层蚀刻的方法 Download PDF

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Publication number
CN107431011B
CN107431011B CN201680020214.2A CN201680020214A CN107431011B CN 107431011 B CN107431011 B CN 107431011B CN 201680020214 A CN201680020214 A CN 201680020214A CN 107431011 B CN107431011 B CN 107431011B
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substrate
etchant
plasma processing
processing system
power
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Chinese (zh)
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CN107431011A (zh
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阿洛科·兰詹
索南·谢尔帕
王明美
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CN201680020214.2A 2015-03-30 2016-03-29 用于原子层蚀刻的方法 Active CN107431011B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562139795P 2015-03-30 2015-03-30
US62/139,795 2015-03-30
PCT/US2016/024661 WO2016160778A1 (en) 2015-03-30 2016-03-29 Method for atomic layer etching

Publications (2)

Publication Number Publication Date
CN107431011A CN107431011A (zh) 2017-12-01
CN107431011B true CN107431011B (zh) 2021-08-24

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CN201680020214.2A Active CN107431011B (zh) 2015-03-30 2016-03-29 用于原子层蚀刻的方法

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US (1) US9881807B2 (enExample)
JP (1) JP6532066B2 (enExample)
KR (1) KR102510737B1 (enExample)
CN (1) CN107431011B (enExample)
SG (1) SG11201707998TA (enExample)
TW (1) TWI621177B (enExample)
WO (1) WO2016160778A1 (enExample)

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US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10692724B2 (en) * 2016-12-23 2020-06-23 Lam Research Corporation Atomic layer etching methods and apparatus
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US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
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US10504742B2 (en) * 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
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JP2019102483A (ja) * 2017-11-28 2019-06-24 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP6987172B2 (ja) * 2017-11-28 2021-12-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置
EP3776636B1 (en) 2018-03-30 2025-05-07 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
WO2019199922A1 (en) * 2018-04-13 2019-10-17 Mattson Technology, Inc. Processing of workpieces with reactive species generated using alkyl halide
GB201810387D0 (en) * 2018-06-25 2018-08-08 Spts Technologies Ltd Method of plasma etching
US10847375B2 (en) * 2018-06-26 2020-11-24 Lam Research Corporation Selective atomic layer etching
US10720337B2 (en) * 2018-07-20 2020-07-21 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials
US11688586B2 (en) * 2018-08-30 2023-06-27 Tokyo Electron Limited Method and apparatus for plasma processing
JP7737789B2 (ja) 2019-07-18 2025-09-11 エーエスエム・アイピー・ホールディング・ベー・フェー 半導体処理システム用シャワーヘッドデバイス
US11043362B2 (en) * 2019-09-17 2021-06-22 Tokyo Electron Limited Plasma processing apparatuses including multiple electron sources
JP7114554B2 (ja) 2019-11-22 2022-08-08 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
CN111370308B (zh) * 2020-02-18 2023-03-21 中国科学院微电子研究所 一种刻蚀方法及系统、刻蚀控制装置、电子器件及设备
JP7394665B2 (ja) * 2020-03-11 2023-12-08 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US12176392B2 (en) 2020-06-25 2024-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with silicide gate fill structure
JP7174016B2 (ja) * 2020-07-16 2022-11-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN112366135B (zh) * 2020-10-26 2024-06-21 北京北方华创微电子装备有限公司 一种硅原子层刻蚀方法
JP7739434B2 (ja) 2021-02-03 2025-09-16 ラム リサーチ コーポレーション 原子層エッチングにおけるエッチング選択性の制御
JP7511501B2 (ja) * 2021-02-10 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置及び監視装置
KR102654170B1 (ko) * 2021-02-17 2024-04-04 대전대학교 산학협력단 액상 전구체를 이용한 원자층 식각 방법
US20220301887A1 (en) * 2021-03-16 2022-09-22 Applied Materials, Inc. Ruthenium etching process
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KR20180036646A (ko) 2018-04-09
TW201643958A (zh) 2016-12-16
US9881807B2 (en) 2018-01-30
TWI621177B (zh) 2018-04-11
JP2018510515A (ja) 2018-04-12
CN107431011A (zh) 2017-12-01
JP6532066B2 (ja) 2019-06-19
SG11201707998TA (en) 2017-10-30
KR102510737B1 (ko) 2023-03-15
WO2016160778A1 (en) 2016-10-06
US20160293432A1 (en) 2016-10-06

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