SG11201707998TA - Method for atomic layer etching - Google Patents

Method for atomic layer etching

Info

Publication number
SG11201707998TA
SG11201707998TA SG11201707998TA SG11201707998TA SG11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA
Authority
SG
Singapore
Prior art keywords
atomic layer
layer etching
etching
atomic
layer
Prior art date
Application number
SG11201707998TA
Other languages
English (en)
Inventor
Alok Ranjan
Sonam Sherpa
Mingmei Wang
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11201707998TA publication Critical patent/SG11201707998TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
SG11201707998TA 2015-03-30 2016-03-29 Method for atomic layer etching SG11201707998TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562139795P 2015-03-30 2015-03-30
PCT/US2016/024661 WO2016160778A1 (en) 2015-03-30 2016-03-29 Method for atomic layer etching

Publications (1)

Publication Number Publication Date
SG11201707998TA true SG11201707998TA (en) 2017-10-30

Family

ID=55745829

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201707998TA SG11201707998TA (en) 2015-03-30 2016-03-29 Method for atomic layer etching

Country Status (7)

Country Link
US (1) US9881807B2 (enExample)
JP (1) JP6532066B2 (enExample)
KR (1) KR102510737B1 (enExample)
CN (1) CN107431011B (enExample)
SG (1) SG11201707998TA (enExample)
TW (1) TWI621177B (enExample)
WO (1) WO2016160778A1 (enExample)

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US10256108B2 (en) * 2016-03-01 2019-04-09 Lam Research Corporation Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments
CN110050331B (zh) * 2016-12-09 2023-07-25 Asm Ip 控股有限公司 热原子层蚀刻工艺
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10692724B2 (en) * 2016-12-23 2020-06-23 Lam Research Corporation Atomic layer etching methods and apparatus
US10134600B2 (en) * 2017-02-06 2018-11-20 Lam Research Corporation Dielectric contact etch
US9779956B1 (en) * 2017-02-06 2017-10-03 Lam Research Corporation Hydrogen activated atomic layer etching
US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
US10483118B2 (en) * 2017-05-11 2019-11-19 Tokyo Electron Limited Etching method
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US10504742B2 (en) * 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10763083B2 (en) * 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
JP2019102483A (ja) * 2017-11-28 2019-06-24 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP6987172B2 (ja) * 2017-11-28 2021-12-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置
EP3776636B1 (en) 2018-03-30 2025-05-07 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
WO2019199922A1 (en) * 2018-04-13 2019-10-17 Mattson Technology, Inc. Processing of workpieces with reactive species generated using alkyl halide
GB201810387D0 (en) * 2018-06-25 2018-08-08 Spts Technologies Ltd Method of plasma etching
US10847375B2 (en) * 2018-06-26 2020-11-24 Lam Research Corporation Selective atomic layer etching
US10720337B2 (en) * 2018-07-20 2020-07-21 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials
US11688586B2 (en) * 2018-08-30 2023-06-27 Tokyo Electron Limited Method and apparatus for plasma processing
JP7737789B2 (ja) 2019-07-18 2025-09-11 エーエスエム・アイピー・ホールディング・ベー・フェー 半導体処理システム用シャワーヘッドデバイス
US11043362B2 (en) * 2019-09-17 2021-06-22 Tokyo Electron Limited Plasma processing apparatuses including multiple electron sources
JP7114554B2 (ja) 2019-11-22 2022-08-08 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
CN111370308B (zh) * 2020-02-18 2023-03-21 中国科学院微电子研究所 一种刻蚀方法及系统、刻蚀控制装置、电子器件及设备
JP7394665B2 (ja) * 2020-03-11 2023-12-08 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US12176392B2 (en) 2020-06-25 2024-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with silicide gate fill structure
JP7174016B2 (ja) * 2020-07-16 2022-11-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN112366135B (zh) * 2020-10-26 2024-06-21 北京北方华创微电子装备有限公司 一种硅原子层刻蚀方法
JP7739434B2 (ja) 2021-02-03 2025-09-16 ラム リサーチ コーポレーション 原子層エッチングにおけるエッチング選択性の制御
JP7511501B2 (ja) * 2021-02-10 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置及び監視装置
KR102654170B1 (ko) * 2021-02-17 2024-04-04 대전대학교 산학협력단 액상 전구체를 이용한 원자층 식각 방법
US20220301887A1 (en) * 2021-03-16 2022-09-22 Applied Materials, Inc. Ruthenium etching process
US11664195B1 (en) 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11688588B1 (en) 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
WO2023188013A1 (ja) 2022-03-29 2023-10-05 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront
JP2024098769A (ja) 2023-01-11 2024-07-24 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US20250201569A1 (en) * 2023-12-14 2025-06-19 Applied Materials, Inc. Etching substrates using vapor adsorption

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US6630201B2 (en) * 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
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US9076646B2 (en) * 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
KR101380835B1 (ko) 2011-07-22 2014-04-04 성균관대학교산학협력단 그래핀의 원자층 식각 방법
US20130084707A1 (en) 2011-09-30 2013-04-04 Tokyo Electron Limited Dry cleaning method for recovering etch process condition
CN103117216B (zh) * 2011-11-17 2015-08-05 中芯国际集成电路制造(上海)有限公司 避免浅沟槽隔离结构产生缺角的半导体器件的制作方法
US9330899B2 (en) * 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film

Also Published As

Publication number Publication date
KR20180036646A (ko) 2018-04-09
TW201643958A (zh) 2016-12-16
US9881807B2 (en) 2018-01-30
TWI621177B (zh) 2018-04-11
JP2018510515A (ja) 2018-04-12
CN107431011A (zh) 2017-12-01
JP6532066B2 (ja) 2019-06-19
KR102510737B1 (ko) 2023-03-15
WO2016160778A1 (en) 2016-10-06
US20160293432A1 (en) 2016-10-06
CN107431011B (zh) 2021-08-24

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