KR102510737B1 - 원자층 에칭 방법 - Google Patents

원자층 에칭 방법 Download PDF

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Publication number
KR102510737B1
KR102510737B1 KR1020177030041A KR20177030041A KR102510737B1 KR 102510737 B1 KR102510737 B1 KR 102510737B1 KR 1020177030041 A KR1020177030041 A KR 1020177030041A KR 20177030041 A KR20177030041 A KR 20177030041A KR 102510737 B1 KR102510737 B1 KR 102510737B1
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South Korea
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substrate
etchant
plasma processing
processing system
power
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Korean (ko)
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KR20180036646A (ko
Inventor
알록 란잔
소남 셰르파
밍메이 왕
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020177030041A 2015-03-30 2016-03-29 원자층 에칭 방법 Active KR102510737B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562139795P 2015-03-30 2015-03-30
US62/139,795 2015-03-30
PCT/US2016/024661 WO2016160778A1 (en) 2015-03-30 2016-03-29 Method for atomic layer etching

Publications (2)

Publication Number Publication Date
KR20180036646A KR20180036646A (ko) 2018-04-09
KR102510737B1 true KR102510737B1 (ko) 2023-03-15

Family

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Family Applications (1)

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KR1020177030041A Active KR102510737B1 (ko) 2015-03-30 2016-03-29 원자층 에칭 방법

Country Status (7)

Country Link
US (1) US9881807B2 (enExample)
JP (1) JP6532066B2 (enExample)
KR (1) KR102510737B1 (enExample)
CN (1) CN107431011B (enExample)
SG (1) SG11201707998TA (enExample)
TW (1) TWI621177B (enExample)
WO (1) WO2016160778A1 (enExample)

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US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10256108B2 (en) * 2016-03-01 2019-04-09 Lam Research Corporation Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments
US10273584B2 (en) 2016-12-09 2019-04-30 Asm Ip Holding B.V. Thermal atomic layer etching processes
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10692724B2 (en) * 2016-12-23 2020-06-23 Lam Research Corporation Atomic layer etching methods and apparatus
US10134600B2 (en) * 2017-02-06 2018-11-20 Lam Research Corporation Dielectric contact etch
US9779956B1 (en) * 2017-02-06 2017-10-03 Lam Research Corporation Hydrogen activated atomic layer etching
US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
US10483118B2 (en) * 2017-05-11 2019-11-19 Tokyo Electron Limited Etching method
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US10504742B2 (en) * 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10763083B2 (en) * 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
JP6987172B2 (ja) * 2017-11-28 2021-12-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP2019102483A (ja) * 2017-11-28 2019-06-24 東京エレクトロン株式会社 エッチング方法およびエッチング装置
EP3776636B1 (en) 2018-03-30 2025-05-07 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
WO2019199922A1 (en) * 2018-04-13 2019-10-17 Mattson Technology, Inc. Processing of workpieces with reactive species generated using alkyl halide
GB201810387D0 (en) * 2018-06-25 2018-08-08 Spts Technologies Ltd Method of plasma etching
US10847375B2 (en) * 2018-06-26 2020-11-24 Lam Research Corporation Selective atomic layer etching
US10720337B2 (en) * 2018-07-20 2020-07-21 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials
US11688586B2 (en) * 2018-08-30 2023-06-27 Tokyo Electron Limited Method and apparatus for plasma processing
JP7737789B2 (ja) 2019-07-18 2025-09-11 エーエスエム・アイピー・ホールディング・ベー・フェー 半導体処理システム用シャワーヘッドデバイス
US11043362B2 (en) * 2019-09-17 2021-06-22 Tokyo Electron Limited Plasma processing apparatuses including multiple electron sources
JP7114554B2 (ja) * 2019-11-22 2022-08-08 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
CN111370308B (zh) * 2020-02-18 2023-03-21 中国科学院微电子研究所 一种刻蚀方法及系统、刻蚀控制装置、电子器件及设备
JP7394665B2 (ja) 2020-03-11 2023-12-08 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US12176392B2 (en) * 2020-06-25 2024-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with silicide gate fill structure
JP7174016B2 (ja) * 2020-07-16 2022-11-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN112366135B (zh) * 2020-10-26 2024-06-21 北京北方华创微电子装备有限公司 一种硅原子层刻蚀方法
KR20230136016A (ko) 2021-02-03 2023-09-26 램 리써치 코포레이션 원자 층 에칭의 에칭 선택도 제어
JP7511501B2 (ja) * 2021-02-10 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置及び監視装置
KR102654170B1 (ko) * 2021-02-17 2024-04-04 대전대학교 산학협력단 액상 전구체를 이용한 원자층 식각 방법
US20220301887A1 (en) * 2021-03-16 2022-09-22 Applied Materials, Inc. Ruthenium etching process
US11664195B1 (en) 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11688588B1 (en) 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
JP7462065B2 (ja) 2022-03-29 2024-04-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront
JP2024098769A (ja) 2023-01-11 2024-07-24 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US20250201569A1 (en) * 2023-12-14 2025-06-19 Applied Materials, Inc. Etching substrates using vapor adsorption

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Also Published As

Publication number Publication date
CN107431011B (zh) 2021-08-24
WO2016160778A1 (en) 2016-10-06
CN107431011A (zh) 2017-12-01
SG11201707998TA (en) 2017-10-30
JP2018510515A (ja) 2018-04-12
KR20180036646A (ko) 2018-04-09
TW201643958A (zh) 2016-12-16
US9881807B2 (en) 2018-01-30
TWI621177B (zh) 2018-04-11
US20160293432A1 (en) 2016-10-06
JP6532066B2 (ja) 2019-06-19

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