JP2019504467A5 - - Google Patents
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- Publication number
- JP2019504467A5 JP2019504467A5 JP2018523021A JP2018523021A JP2019504467A5 JP 2019504467 A5 JP2019504467 A5 JP 2019504467A5 JP 2018523021 A JP2018523021 A JP 2018523021A JP 2018523021 A JP2018523021 A JP 2018523021A JP 2019504467 A5 JP2019504467 A5 JP 2019504467A5
- Authority
- JP
- Japan
- Prior art keywords
- nanowires
- surface layer
- oxidized
- microwave plasma
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002070 nanowire Substances 0.000 claims 35
- 238000000034 method Methods 0.000 claims 31
- 239000002344 surface layer Substances 0.000 claims 15
- 239000007795 chemical reaction product Substances 0.000 claims 6
- 239000000126 substance Substances 0.000 claims 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562250395P | 2015-11-03 | 2015-11-03 | |
| US62/250,395 | 2015-11-03 | ||
| PCT/US2016/060378 WO2017079470A1 (en) | 2015-11-03 | 2016-11-03 | Method of corner rounding and trimming of nanowires by microwave plasma |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019504467A JP2019504467A (ja) | 2019-02-14 |
| JP2019504467A5 true JP2019504467A5 (enExample) | 2019-11-21 |
| JP6928763B2 JP6928763B2 (ja) | 2021-09-01 |
Family
ID=58635828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018523021A Active JP6928763B2 (ja) | 2015-11-03 | 2016-11-03 | マイクロ波プラズマによりナノワイヤの角を丸め、調整する方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10008564B2 (enExample) |
| JP (1) | JP6928763B2 (enExample) |
| KR (1) | KR102396835B1 (enExample) |
| WO (1) | WO2017079470A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI845516B (zh) * | 2018-06-22 | 2024-06-21 | 日商東京威力科創股份有限公司 | 奈米線裝置的形成方法 |
| US11810761B2 (en) | 2018-07-27 | 2023-11-07 | Eagle Harbor Technologies, Inc. | Nanosecond pulser ADC system |
| KR102499709B1 (ko) * | 2018-08-10 | 2023-02-16 | 이글 하버 테크놀로지스, 인코포레이티드 | RF 플라즈마 반응기용 플라즈마 시스(sheath) 제어 |
| JP7072477B2 (ja) * | 2018-09-20 | 2022-05-20 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| JP7414593B2 (ja) * | 2020-03-10 | 2024-01-16 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US11967484B2 (en) | 2020-07-09 | 2024-04-23 | Eagle Harbor Technologies, Inc. | Ion current droop compensation |
| US11824542B1 (en) | 2022-06-29 | 2023-11-21 | Eagle Harbor Technologies, Inc. | Bipolar high voltage pulser |
| KR20250084155A (ko) | 2022-09-29 | 2025-06-10 | 이글 하버 테크놀로지스, 인코포레이티드 | 고전압 플라즈마 제어 |
| JP2024079879A (ja) * | 2022-12-01 | 2024-06-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7829144B2 (en) * | 1997-11-05 | 2010-11-09 | Tokyo Electron Limited | Method of forming a metal film for electrode |
| US6793967B1 (en) * | 1999-06-25 | 2004-09-21 | Sony Corporation | Carbonaceous complex structure and manufacturing method therefor |
| US6235643B1 (en) * | 1999-08-10 | 2001-05-22 | Applied Materials, Inc. | Method for etching a trench having rounded top and bottom corners in a silicon substrate |
| US7445671B2 (en) * | 2000-06-29 | 2008-11-04 | University Of Louisville | Formation of metal oxide nanowire networks (nanowebs) of low-melting metals |
| US7029536B2 (en) * | 2003-03-17 | 2006-04-18 | Tokyo Electron Limited | Processing system and method for treating a substrate |
| US6852584B1 (en) | 2004-01-14 | 2005-02-08 | Tokyo Electron Limited | Method of trimming a gate electrode structure |
| US7452778B2 (en) * | 2004-06-10 | 2008-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor nano-wire devices and methods of fabrication |
| KR100594327B1 (ko) * | 2005-03-24 | 2006-06-30 | 삼성전자주식회사 | 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법 |
| KR101163816B1 (ko) * | 2005-09-22 | 2012-07-09 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 장치 |
| US9716153B2 (en) * | 2007-05-25 | 2017-07-25 | Cypress Semiconductor Corporation | Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region |
| US7981763B1 (en) * | 2008-08-15 | 2011-07-19 | Novellus Systems, Inc. | Atomic layer removal for high aspect ratio gapfill |
| JP2010093051A (ja) * | 2008-10-08 | 2010-04-22 | Fujitsu Microelectronics Ltd | 電界効果型半導体装置 |
| US7893492B2 (en) * | 2009-02-17 | 2011-02-22 | International Business Machines Corporation | Nanowire mesh device and method of fabricating same |
| US8211735B2 (en) * | 2009-06-08 | 2012-07-03 | International Business Machines Corporation | Nano/microwire solar cell fabricated by nano/microsphere lithography |
| FR2950481B1 (fr) * | 2009-09-18 | 2011-10-28 | Commissariat Energie Atomique | Realisation d'un dispositif microelectronique comprenant des nano-fils de silicium et de germanium integres sur un meme substrat |
| CN102034863B (zh) | 2009-09-28 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件、含包围圆柱形沟道的栅的晶体管及制造方法 |
| DE102011107072B8 (de) * | 2011-07-12 | 2013-01-17 | Centrotherm Thermal Solutions Gmbh & Co. Kg | Verfahren zum ausbilden einer oxidschicht auf einem substrat bei tiefen temperaturen |
| US8771536B2 (en) * | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
| JP6016339B2 (ja) * | 2011-08-12 | 2016-10-26 | 東京エレクトロン株式会社 | カーボンナノチューブの加工方法及び加工装置 |
| US20130149852A1 (en) * | 2011-12-08 | 2013-06-13 | Tokyo Electron Limited | Method for forming a semiconductor device |
| US8557632B1 (en) * | 2012-04-09 | 2013-10-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
| US9059398B2 (en) * | 2012-08-03 | 2015-06-16 | Applied Materials, Inc. | Methods for etching materials used in MRAM applications |
| US8889497B2 (en) * | 2012-12-28 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
| KR101452693B1 (ko) * | 2013-04-09 | 2014-10-22 | 주식회사 테스 | 기판처리방법 |
| EP2887399B1 (en) * | 2013-12-20 | 2017-08-30 | Imec | A method for manufacturing a transistor device and associated device |
| US9419107B2 (en) * | 2014-06-19 | 2016-08-16 | Applied Materials, Inc. | Method for fabricating vertically stacked nanowires for semiconductor applications |
| KR102799414B1 (ko) * | 2015-12-28 | 2025-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 포함하는 표시 장치 |
| JP6590716B2 (ja) * | 2016-02-02 | 2019-10-16 | 東京エレクトロン株式会社 | トランジスタの閾値制御方法および半導体装置の製造方法 |
-
2016
- 2016-11-03 WO PCT/US2016/060378 patent/WO2017079470A1/en not_active Ceased
- 2016-11-03 KR KR1020187015170A patent/KR102396835B1/ko active Active
- 2016-11-03 US US15/342,968 patent/US10008564B2/en active Active
- 2016-11-03 JP JP2018523021A patent/JP6928763B2/ja active Active
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