JP2019517743A5 - - Google Patents
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- Publication number
- JP2019517743A5 JP2019517743A5 JP2019514202A JP2019514202A JP2019517743A5 JP 2019517743 A5 JP2019517743 A5 JP 2019517743A5 JP 2019514202 A JP2019514202 A JP 2019514202A JP 2019514202 A JP2019514202 A JP 2019514202A JP 2019517743 A5 JP2019517743 A5 JP 2019517743A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- process gas
- gas
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 42
- 239000007789 gas Substances 0.000 claims 25
- 239000000758 substrate Substances 0.000 claims 20
- 239000011261 inert gas Substances 0.000 claims 5
- 125000006850 spacer group Chemical group 0.000 claims 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 238000003672 processing method Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 230000004907 flux Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662342993P | 2016-05-29 | 2016-05-29 | |
| US62/342,993 | 2016-05-29 | ||
| PCT/US2017/034868 WO2017210141A1 (en) | 2016-05-29 | 2017-05-26 | Method of sidewall image transfer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019517743A JP2019517743A (ja) | 2019-06-24 |
| JP2019517743A5 true JP2019517743A5 (enExample) | 2020-04-30 |
| JP6928810B2 JP6928810B2 (ja) | 2021-09-01 |
Family
ID=60418325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019514202A Active JP6928810B2 (ja) | 2016-05-29 | 2017-05-26 | 側壁イメージ転写の方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10373828B2 (enExample) |
| JP (1) | JP6928810B2 (enExample) |
| KR (1) | KR102347402B1 (enExample) |
| TW (1) | TWI680499B (enExample) |
| WO (1) | WO2017210141A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190038945A (ko) | 2016-08-29 | 2019-04-09 | 도쿄엘렉트론가부시키가이샤 | 실리콘 질화물의 준원자 층 에칭 방법 |
| WO2018044727A1 (en) * | 2016-08-29 | 2018-03-08 | Tokyo Electron Limited | Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures |
| KR102537097B1 (ko) | 2017-02-23 | 2023-05-25 | 도쿄엘렉트론가부시키가이샤 | 실리콘 질화물의 유사 원자층 에칭 방법 |
| TWI761461B (zh) | 2017-02-23 | 2022-04-21 | 日商東京威力科創股份有限公司 | 用於製造自對準塊體結構之矽氮化物心軸的異向性抽出方法 |
| US10607852B2 (en) * | 2017-09-13 | 2020-03-31 | Tokyo Electron Limited | Selective nitride etching method for self-aligned multiple patterning |
| KR102845765B1 (ko) | 2018-01-15 | 2025-08-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 원격 플라즈마 산화에 대한 아르곤 추가 |
| JP7025952B2 (ja) * | 2018-02-16 | 2022-02-25 | 東京エレクトロン株式会社 | エッチングする方法及びプラズマ処理装置 |
| JP2019165090A (ja) * | 2018-03-19 | 2019-09-26 | 東芝メモリ株式会社 | 半導体装置の製造方法および半導体製造装置 |
| US10867804B2 (en) | 2018-06-29 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Patterning method for semiconductor device and structures resulting therefrom |
| US10629451B1 (en) * | 2019-02-01 | 2020-04-21 | American Air Liquide, Inc. | Method to improve profile control during selective etching of silicon nitride spacers |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05109760A (ja) * | 1991-10-18 | 1993-04-30 | Seiko Epson Corp | 半導体装置 |
| JP2804700B2 (ja) * | 1993-03-31 | 1998-09-30 | 富士通株式会社 | 半導体装置の製造装置及び半導体装置の製造方法 |
| KR100322545B1 (ko) * | 1999-02-10 | 2002-03-18 | 윤종용 | 건식 세정 공정을 전 공정으로 이용하는 반도체 장치의콘택홀 채움 방법 |
| US7977249B1 (en) | 2007-03-07 | 2011-07-12 | Novellus Systems, Inc. | Methods for removing silicon nitride and other materials during fabrication of contacts |
| US8252696B2 (en) | 2007-10-22 | 2012-08-28 | Applied Materials, Inc. | Selective etching of silicon nitride |
| US20090286402A1 (en) | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
| US9658765B2 (en) * | 2008-07-31 | 2017-05-23 | Northrop Grumman Systems Corporation | Image magnification system for computer interface |
| US20100267237A1 (en) * | 2009-04-20 | 2010-10-21 | Advanced Micro Devices, Inc. | Methods for fabricating finfet semiconductor devices using ashable sacrificial mandrels |
| US20110223770A1 (en) * | 2010-03-15 | 2011-09-15 | Lam Research Corporation | Nitride plasma etch with highly tunable selectivity to oxide |
| US8961794B2 (en) * | 2010-07-29 | 2015-02-24 | Phillips 66 Company | Metal impurity and high molecular weight components removal of biomass derived biocrude |
| US8999856B2 (en) * | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
| TWI476832B (zh) | 2011-09-28 | 2015-03-11 | Tokyo Electron Ltd | 蝕刻方法及裝置 |
| US8809169B2 (en) * | 2011-09-30 | 2014-08-19 | Tokyo Electron Limited | Multi-layer pattern for alternate ALD processes |
| KR101276258B1 (ko) * | 2011-11-21 | 2013-06-20 | 피에스케이 주식회사 | 반도체 제조 장치 및 반도체 제조 방법 |
| US9093389B2 (en) * | 2013-01-16 | 2015-07-28 | Applied Materials, Inc. | Method of patterning a silicon nitride dielectric film |
| US9257293B2 (en) | 2013-03-14 | 2016-02-09 | Applied Materials, Inc. | Methods of forming silicon nitride spacers |
| US9269590B2 (en) * | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
| US9318343B2 (en) * | 2014-06-11 | 2016-04-19 | Tokyo Electron Limited | Method to improve etch selectivity during silicon nitride spacer etch |
| US20150371865A1 (en) * | 2014-06-19 | 2015-12-24 | Applied Materials, Inc. | High selectivity gas phase silicon nitride removal |
| JP6235981B2 (ja) * | 2014-07-01 | 2017-11-22 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| US9406522B2 (en) * | 2014-07-24 | 2016-08-02 | Applied Materials, Inc. | Single platform, multiple cycle spacer deposition and etch |
| US20160181116A1 (en) * | 2014-12-18 | 2016-06-23 | Lam Research Corporation | Selective nitride etch |
| US9484202B1 (en) * | 2015-06-03 | 2016-11-01 | Applied Materials, Inc. | Apparatus and methods for spacer deposition and selective removal in an advanced patterning process |
-
2017
- 2017-05-26 JP JP2019514202A patent/JP6928810B2/ja active Active
- 2017-05-26 KR KR1020187038105A patent/KR102347402B1/ko active Active
- 2017-05-26 WO PCT/US2017/034868 patent/WO2017210141A1/en not_active Ceased
- 2017-05-26 US US15/607,406 patent/US10373828B2/en active Active
- 2017-05-31 TW TW106117833A patent/TWI680499B/zh active
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