JP2009065136A5 - - Google Patents
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- Publication number
- JP2009065136A5 JP2009065136A5 JP2008203669A JP2008203669A JP2009065136A5 JP 2009065136 A5 JP2009065136 A5 JP 2009065136A5 JP 2008203669 A JP2008203669 A JP 2008203669A JP 2008203669 A JP2008203669 A JP 2008203669A JP 2009065136 A5 JP2009065136 A5 JP 2009065136A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- ions
- single crystal
- crystal semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000000758 substrate Substances 0.000 claims 45
- 239000004065 semiconductor Substances 0.000 claims 40
- 150000002500 ions Chemical class 0.000 claims 31
- 239000013078 crystal Substances 0.000 claims 28
- 238000004519 manufacturing process Methods 0.000 claims 12
- 238000000034 method Methods 0.000 claims 11
- 238000000926 separation method Methods 0.000 claims 8
- 229910003691 SiBr Inorganic materials 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 230000005284 excitation Effects 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 4
- 229910000077 silane Inorganic materials 0.000 claims 4
- -1 silicon halide Chemical class 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 150000001282 organosilanes Chemical class 0.000 claims 2
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 claims 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims 2
- CFTHARXEQHJSEH-UHFFFAOYSA-N silicon tetraiodide Chemical compound I[Si](I)(I)I CFTHARXEQHJSEH-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008203669A JP2009065136A (ja) | 2007-08-16 | 2008-08-07 | 半導体基板の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007212285 | 2007-08-16 | ||
| JP2008203669A JP2009065136A (ja) | 2007-08-16 | 2008-08-07 | 半導体基板の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009065136A JP2009065136A (ja) | 2009-03-26 |
| JP2009065136A5 true JP2009065136A5 (enExample) | 2011-08-25 |
Family
ID=40559404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008203669A Withdrawn JP2009065136A (ja) | 2007-08-16 | 2008-08-07 | 半導体基板の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009065136A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5370100B2 (ja) * | 2009-11-26 | 2013-12-18 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
| JP5769023B2 (ja) * | 2011-11-22 | 2015-08-26 | 株式会社トクヤマ | シリコン単結晶膜の製造方法 |
| US11062906B2 (en) | 2013-08-16 | 2021-07-13 | Entegris, Inc. | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3864495B2 (ja) * | 1997-05-15 | 2006-12-27 | 株式会社デンソー | 半導体基板の製造方法 |
| JPH11233449A (ja) * | 1998-02-13 | 1999-08-27 | Denso Corp | 半導体基板の製造方法 |
| JP2000077287A (ja) * | 1998-08-26 | 2000-03-14 | Nissin Electric Co Ltd | 結晶薄膜基板の製造方法 |
| US6544862B1 (en) * | 2000-01-14 | 2003-04-08 | Silicon Genesis Corporation | Particle distribution method and resulting structure for a layer transfer process |
| JP2004134675A (ja) * | 2002-10-11 | 2004-04-30 | Sharp Corp | Ｓｏｉ基板、表示装置およびｓｏｉ基板の製造方法 |
| JP2006261591A (ja) * | 2005-03-18 | 2006-09-28 | Fujitsu Ltd | 絶縁ゲート型半導体装置の製造方法 |
-
2008
- 2008-08-07 JP JP2008203669A patent/JP2009065136A/ja not_active Withdrawn
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