JP2008288579A5 - - Google Patents

Info

Publication number

JP2008288579A5

JP2008288579A5 JP2008109391A JP2008109391A JP2008288579A5 JP 2008288579 A5 JP2008288579 A5 JP 2008288579A5 JP 2008109391 A JP2008109391 A JP 2008109391A JP 2008109391 A JP2008109391 A JP 2008109391A JP 2008288579 A5 JP2008288579 A5 JP 2008288579A5

Authority

JP

Japan

Prior art keywords

substrate

layer

manufacturing

heat treatment

temperature

Prior art date

2008-04-18

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

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• 239000000758 substrate Substances 0.000 claims 33
• 239000004065 semiconductor Substances 0.000 claims 17
• 238000000034 method Methods 0.000 claims 14
• 238000004519 manufacturing process Methods 0.000 claims 12
• 238000010438 heat treatment Methods 0.000 claims 11
• 150000002500 ions Chemical class 0.000 claims 11
• 238000000926 separation method Methods 0.000 claims 8
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 7
• 229910052814 silicon oxide Inorganic materials 0.000 claims 7
• 239000007789 gas Substances 0.000 claims 4
• BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 3
• 230000004888 barrier function Effects 0.000 claims 3
• 238000005229 chemical vapour deposition Methods 0.000 claims 3
• 239000001257 hydrogen Substances 0.000 claims 3
• 229910052739 hydrogen Inorganic materials 0.000 claims 3
• -1 hydrogen ions Chemical class 0.000 claims 3
• 229910000077 silane Inorganic materials 0.000 claims 3
• WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims 2
• BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 2
• HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims 2
• 230000035515 penetration Effects 0.000 claims 2
• CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims 2
• 230000032798 delamination Effects 0.000 claims 1
• FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 1
• 150000001282 organosilanes Chemical class 0.000 claims 1
• QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims 1