JP5391599B2 - 基板接合方法及び電子部品 - Google Patents
基板接合方法及び電子部品 Download PDFInfo
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Description
なお、接合用絶縁膜によって第1の基板と第2の基板とを接合させる態様としては、一方の基板に設けた接合用絶縁膜を他方の基板の表面に接合させる場合や、一方の基板に設けた接合用絶縁膜と他方の基板に設けた接合用絶縁膜を接合させる場合が含まれる。
原料室温度:50℃前後
成膜圧力:1〜10Torr
成膜温度:200〜500℃
プラズマパワー:400W前後
サセプタ距離:5〜20mm
11a カバー基板
12 ICデバイス
13 絶縁シール部
14 電極
21 ウエハ
21a 基板
22 MEMSデバイス
23 電極
26 Au突起電極
31 MEMS装置
41 プラズマCVD装置
42 チャンバ
43 原料容器
44 供給ダクト
45 TEOSタンク
47 シャワーヘッド
51 イオンガン
52 Ar+イオン
53 SiO2分子
54 結合手
Claims (6)
- 第1の基板と第2の基板のうち少なくとも一方の基板に、TEOSを原材料とするCVD法によりSiO2膜を堆積させることによって接合用絶縁膜を成膜する成膜工程と、
前記接合用絶縁膜を介して前記第1の基板と前記第2の基板とを接合させる接合工程と、
接合用絶縁膜のうち前記第1の基板及び前記第2の基板に接合している箇所を分割する位置で、接合された両基板を断裁する断裁工程と、
を備えた基板接合方法。 - 前記第1の基板の電極と前記第2の基板の電極のうち一方の電極に塑性変形可能な金属からなる接合用電極を設け、
前記接合工程において第1の基板と第2の基板を重ねて接合する際に、前記接合用電極を他方の基板の電極に当接させてから前記接合用絶縁膜を当接させることで、前記接合用電極を他方の基板の電極に圧着させることを特徴とする、請求項1に記載の基板接合方法。 - 前記接合工程は、接合表面を活性化させる接合方法により、前記接合用絶縁膜を介して前記第1の基板と前記第2の基板とを接合させることを特徴とする、請求項1に記載の基板接合方法。
- 前記第1の基板はウエハ基板であり、
前記第2の基板は複数のデバイスを作製されたウエハ基板であり、
前記第1の基板と前記第2の基板とを接合した後、接合された両基板を前記デバイスを設けた領域ごとに断裁することを特徴とする、請求項1に記載の基板接合方法。 - 3枚以上の複数枚の基板を接合することを特徴とする、請求項1に記載の基板接合方法。
- 第1の基板と複数個のデバイスを作製された第2の基板のうち少なくとも一方の基板に、TEOSを原材料として生成されるSiO2膜によって接合用絶縁膜を形成し、前記接合用絶縁膜を介して前記第1の基板と前記第2の基板とを接合して両基板間に前記デバイスを封止し、接合用絶縁膜のうち前記第1の基板及び前記第2の基板に接合している箇所を分割する位置で、接合された両基板を前記デバイスを設けた領域ごとに断裁したことを特徴とする電子部品。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008182577A JP5391599B2 (ja) | 2008-07-14 | 2008-07-14 | 基板接合方法及び電子部品 |
EP09165177.8A EP2145855B1 (en) | 2008-07-14 | 2009-07-10 | Substrate bonding method and MEMS component |
CN200910159812XA CN101628705B (zh) | 2008-07-14 | 2009-07-10 | 基板接合方法和电子部件 |
US12/502,735 US8048772B2 (en) | 2008-07-14 | 2009-07-14 | Substrate bonding method and electronic component thereof |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008182577A JP5391599B2 (ja) | 2008-07-14 | 2008-07-14 | 基板接合方法及び電子部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010021466A JP2010021466A (ja) | 2010-01-28 |
JP5391599B2 true JP5391599B2 (ja) | 2014-01-15 |
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CN104973562A (zh) * | 2014-04-03 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | 晶圆的切割方法和mems晶圆的切割方法 |
CN108726470B (zh) * | 2017-04-21 | 2020-02-21 | 华为技术有限公司 | Mems芯片及其电封装方法 |
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US7692270B2 (en) | 2003-10-20 | 2010-04-06 | University Of Dayton | Ferroelectric varactors suitable for capacitive shunt switching |
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US7611919B2 (en) * | 2005-04-21 | 2009-11-03 | Hewlett-Packard Development Company, L.P. | Bonding interface for micro-device packaging |
US7417307B2 (en) * | 2005-07-29 | 2008-08-26 | Hewlett-Packard Development Company, L.P. | System and method for direct-bonding of substrates |
US20070023850A1 (en) * | 2005-07-30 | 2007-02-01 | Chien-Hua Chen | Bonding surfaces together via plasma treatment on both surfaces with wet treatment on only one surface |
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US7601271B2 (en) * | 2005-11-28 | 2009-10-13 | S.O.I.Tec Silicon On Insulator Technologies | Process and equipment for bonding by molecular adhesion |
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