JP2008311628A5 - - Google Patents
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- Publication number
- JP2008311628A5 JP2008311628A5 JP2008111178A JP2008111178A JP2008311628A5 JP 2008311628 A5 JP2008311628 A5 JP 2008311628A5 JP 2008111178 A JP2008111178 A JP 2008111178A JP 2008111178 A JP2008111178 A JP 2008111178A JP 2008311628 A5 JP2008311628 A5 JP 2008311628A5
- Authority
- JP
- Japan
- Prior art keywords
- reference circuit
- transistor
- crystal semiconductor
- region
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000002955 isolation Methods 0.000 claims 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008111178A JP5159411B2 (ja) | 2007-05-17 | 2008-04-22 | 表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007132181 | 2007-05-17 | ||
| JP2007132181 | 2007-05-17 | ||
| JP2008111178A JP5159411B2 (ja) | 2007-05-17 | 2008-04-22 | 表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008311628A JP2008311628A (ja) | 2008-12-25 |
| JP2008311628A5 true JP2008311628A5 (enExample) | 2011-03-31 |
| JP5159411B2 JP5159411B2 (ja) | 2013-03-06 |
Family
ID=40131452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008111178A Expired - Fee Related JP5159411B2 (ja) | 2007-05-17 | 2008-04-22 | 表示装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7851804B2 (enExample) |
| JP (1) | JP5159411B2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102162746B1 (ko) | 2009-10-21 | 2020-10-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 아날로그 회로 및 반도체 장치 |
| KR101848684B1 (ko) * | 2010-02-19 | 2018-04-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 장치 |
| KR102173801B1 (ko) | 2012-07-12 | 2020-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 및 표시 장치의 제작 방법 |
| WO2014038323A1 (ja) | 2012-09-06 | 2014-03-13 | ソニー株式会社 | 情報処理装置、情報処理方法及びプログラム |
| US8946731B2 (en) | 2012-09-24 | 2015-02-03 | International Business Machines Corporation | OLED display with spalled semiconductor driving circuitry and other integrated functions |
| US9059123B2 (en) | 2013-07-24 | 2015-06-16 | International Business Machines Corporation | Active matrix using hybrid integrated circuit and bipolar transistor |
| JP6402599B2 (ja) * | 2014-11-13 | 2018-10-10 | 富士通株式会社 | 情報処理装置、設計支援方法、及び設計支援プログラム |
| US9910530B2 (en) * | 2015-02-27 | 2018-03-06 | Panasonic Liquid Crystal Display Co., Ltd. | Display panel with touch detection function |
| JP6708643B2 (ja) * | 2015-06-19 | 2020-06-10 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US10836200B2 (en) * | 2017-11-13 | 2020-11-17 | X Display Company Technology Limited | Rigid micro-modules with ILED and light conductor |
| CN108428726B (zh) * | 2018-04-10 | 2020-04-21 | 京东方科技集团股份有限公司 | 一种oled基板及其制备方法 |
| US11167375B2 (en) | 2018-08-10 | 2021-11-09 | The Research Foundation For The State University Of New York | Additive manufacturing processes and additively manufactured products |
| KR20230173253A (ko) * | 2022-06-16 | 2023-12-27 | 삼성디스플레이 주식회사 | 색변환 기판, 이를 포함하는 표시 장치, 및 색변환 기판의 제조 방법 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6067062A (en) * | 1990-09-05 | 2000-05-23 | Seiko Instruments Inc. | Light valve device |
| US6448944B2 (en) * | 1993-10-22 | 2002-09-10 | Kopin Corporation | Head-mounted matrix display |
| JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| JP2002124467A (ja) | 2000-10-18 | 2002-04-26 | Matsushita Electric Ind Co Ltd | 多結晶半導体膜の形成方法および薄膜トランジスタの製造方法 |
| US6734463B2 (en) | 2001-05-23 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a window |
| US7119365B2 (en) | 2002-03-26 | 2006-10-10 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate |
| TWI224880B (en) | 2002-07-25 | 2004-12-01 | Sanyo Electric Co | Organic electroluminescence display device |
| US7508034B2 (en) * | 2002-09-25 | 2009-03-24 | Sharp Kabushiki Kaisha | Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device |
| WO2004066248A1 (ja) | 2003-01-17 | 2004-08-05 | Semiconductor Energy Laboratory Co., Ltd. | 電流源回路、信号線駆動回路及びその駆動方法並びに発光装置 |
| JP3922229B2 (ja) * | 2003-08-29 | 2007-05-30 | セイコーエプソン株式会社 | アレイ基板、表示パネル及び電子機器 |
| CN100460898C (zh) | 2003-11-20 | 2009-02-11 | 夏普株式会社 | 圆偏振板、垂直配向型液晶显示板及其制造方法 |
| US7495257B2 (en) * | 2003-12-26 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7274044B2 (en) | 2004-01-26 | 2007-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2005338794A (ja) * | 2004-04-27 | 2005-12-08 | Rohm Co Ltd | 有機ｅｌ駆動回路の基準電流発生回路、有機ｅｌ駆動回路およびこれを用いる有機ｅｌ表示装置 |
| US7692378B2 (en) | 2004-04-28 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device including an insulating layer with an opening |
| US7687404B2 (en) | 2004-05-14 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US7476908B2 (en) * | 2004-05-21 | 2009-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2006189806A (ja) * | 2004-12-06 | 2006-07-20 | Semiconductor Energy Lab Co Ltd | 表示装置及びその駆動方法 |
| JP4274113B2 (ja) * | 2004-12-07 | 2009-06-03 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| US7566633B2 (en) * | 2005-02-25 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2006276718A (ja) * | 2005-03-30 | 2006-10-12 | Toshiba Matsushita Display Technology Co Ltd | Ｅｌ表示装置 |
-
2008
- 2008-03-25 US US12/054,949 patent/US7851804B2/en not_active Expired - Fee Related
- 2008-04-22 JP JP2008111178A patent/JP5159411B2/ja not_active Expired - Fee Related
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