JP2012513117A5 - - Google Patents
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- Publication number
- JP2012513117A5 JP2012513117A5 JP2011542184A JP2011542184A JP2012513117A5 JP 2012513117 A5 JP2012513117 A5 JP 2012513117A5 JP 2011542184 A JP2011542184 A JP 2011542184A JP 2011542184 A JP2011542184 A JP 2011542184A JP 2012513117 A5 JP2012513117 A5 JP 2012513117A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon oxide
- flowing
- precursor
- containing precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 29
- 239000002243 precursor Substances 0.000 claims 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 17
- 229910052710 silicon Inorganic materials 0.000 claims 17
- 239000010703 silicon Substances 0.000 claims 17
- 238000000151 deposition Methods 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 10
- 230000008021 deposition Effects 0.000 claims 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 6
- 230000001590 oxidative effect Effects 0.000 claims 6
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 claims 6
- 150000003961 organosilicon compounds Chemical class 0.000 claims 5
- 239000000654 additive Substances 0.000 claims 4
- 230000000996 additive effect Effects 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 2
- 229910018540 Si C Inorganic materials 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims 2
- 229910018557 Si O Inorganic materials 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000009499 grossing Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13886408P | 2008-12-18 | 2008-12-18 | |
| US61/138,864 | 2008-12-18 | ||
| US12/489,234 | 2009-06-22 | ||
| US12/489,234 US8012887B2 (en) | 2008-12-18 | 2009-06-22 | Precursor addition to silicon oxide CVD for improved low temperature gapfill |
| PCT/US2009/065181 WO2010080216A2 (en) | 2008-12-18 | 2009-11-19 | Precursor addition to silicon oxide cvd for improved low temperature gapfill |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012513117A JP2012513117A (ja) | 2012-06-07 |
| JP2012513117A5 true JP2012513117A5 (enExample) | 2013-01-10 |
Family
ID=42266753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011542184A Pending JP2012513117A (ja) | 2008-12-18 | 2009-11-19 | 低温ギャップフィル改善のための酸化シリコンｃｖｄへの前駆体添加 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8012887B2 (enExample) |
| JP (1) | JP2012513117A (enExample) |
| KR (1) | KR20110104062A (enExample) |
| CN (1) | CN102282649A (enExample) |
| TW (1) | TWI395831B (enExample) |
| WO (1) | WO2010080216A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8476142B2 (en) | 2010-04-12 | 2013-07-02 | Applied Materials, Inc. | Preferential dielectric gapfill |
| US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
| US8664127B2 (en) * | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
| US20120180954A1 (en) | 2011-01-18 | 2012-07-19 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
| US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
| WO2013048872A1 (en) * | 2011-09-26 | 2013-04-04 | Applied Materials, Inc. | Pretreatment and improved dielectric coverage |
| KR101862547B1 (ko) | 2012-04-13 | 2018-05-31 | 삼성전자주식회사 | 폴리실리콘막 형성 방법 및 반도체 장치의 제조 방법 |
| CN102709426A (zh) * | 2012-06-11 | 2012-10-03 | 华灿光电股份有限公司 | 一种表面粗化的GaN基LED芯片的制作方法 |
| US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
| US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| CN107660307B (zh) * | 2015-06-26 | 2021-11-05 | 应用材料公司 | 氧化硅膜的选择性沉积 |
| US10264663B1 (en) | 2017-10-18 | 2019-04-16 | Lam Research Corporation | Matchless plasma source for semiconductor wafer fabrication |
| US10872762B2 (en) * | 2017-11-08 | 2020-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming silicon oxide layer and semiconductor structure |
| US10672590B2 (en) * | 2018-03-14 | 2020-06-02 | Lam Research Corporation | Frequency tuning for a matchless plasma source |
| JP7076490B2 (ja) | 2020-03-24 | 2022-05-27 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| US11404465B2 (en) * | 2020-06-15 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company Limited | Epitaxial semiconductor liner for enhancing uniformity of a charged layer in a deep trench and methods of forming the same |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05121568A (ja) * | 1991-05-21 | 1993-05-18 | Fujitsu Ltd | 半導体装置の製造方法 |
| US6008540A (en) * | 1997-05-28 | 1999-12-28 | Texas Instruments Incorporated | Integrated circuit dielectric and method |
| US6727190B2 (en) * | 1998-09-03 | 2004-04-27 | Micron Technology, Inc. | Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials |
| US20020090834A1 (en) * | 2000-12-18 | 2002-07-11 | Lee Wei William | Method for depositing silicon dioxide on a substrate surface using hexamethyldisiloxane (HMDSO) as a precursor gas |
| US6583048B2 (en) * | 2001-01-17 | 2003-06-24 | Air Products And Chemicals, Inc. | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
| US6596654B1 (en) * | 2001-08-24 | 2003-07-22 | Novellus Systems, Inc. | Gap fill for high aspect ratio structures |
| US6890850B2 (en) * | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
| US20070212850A1 (en) * | 2002-09-19 | 2007-09-13 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
| US7456116B2 (en) * | 2002-09-19 | 2008-11-25 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
| US6905940B2 (en) * | 2002-09-19 | 2005-06-14 | Applied Materials, Inc. | Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill |
| US7087536B2 (en) * | 2004-09-01 | 2006-08-08 | Applied Materials | Silicon oxide gapfill deposition using liquid precursors |
| JP2006339506A (ja) * | 2005-06-03 | 2006-12-14 | Semiconductor Process Laboratory Co Ltd | 成膜方法及び半導体装置の製造方法 |
| TWI263301B (en) * | 2006-01-26 | 2006-10-01 | United Microelectronics Corp | Porous low-k dielectric film and fabrication method thereof |
| US7790634B2 (en) * | 2006-05-30 | 2010-09-07 | Applied Materials, Inc | Method for depositing and curing low-k films for gapfill and conformal film applications |
| US7297376B1 (en) * | 2006-07-07 | 2007-11-20 | Applied Materials, Inc. | Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers |
| US20080124946A1 (en) * | 2006-11-28 | 2008-05-29 | Air Products And Chemicals, Inc. | Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films |
| JP5211572B2 (ja) * | 2007-07-27 | 2013-06-12 | 株式会社明電舎 | 酸化膜形成方法 |
-
2009
- 2009-06-22 US US12/489,234 patent/US8012887B2/en not_active Expired - Fee Related
- 2009-11-19 WO PCT/US2009/065181 patent/WO2010080216A2/en not_active Ceased
- 2009-11-19 CN CN200980151841XA patent/CN102282649A/zh active Pending
- 2009-11-19 KR KR1020117016797A patent/KR20110104062A/ko not_active Withdrawn
- 2009-11-19 JP JP2011542184A patent/JP2012513117A/ja active Pending
- 2009-12-08 TW TW098141920A patent/TWI395831B/zh not_active IP Right Cessation
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