JP2012513117A - 低温ギャップフィル改善のための酸化シリコンｃｖｄへの前駆体添加 - Google Patents

低温ギャップフィル改善のための酸化シリコンｃｖｄへの前駆体添加 Download PDF

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JP2012513117A
JP2012513117A JP2011542184A JP2011542184A JP2012513117A JP 2012513117 A JP2012513117 A JP 2012513117A JP 2011542184 A JP2011542184 A JP 2011542184A JP 2011542184 A JP2011542184 A JP 2011542184A JP 2012513117 A JP2012513117 A JP 2012513117A
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silicon oxide
silicon
precursor
flowing
substrate
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JP2012513117A5 (enExample
Inventor
シャンカー ヴェンカタラマン，
宏 ▲浜▼名
マニュエル， エー． ヘルナンデス，
ニティン， ケー． イングル，
ポール， エドワード ジー，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2012513117A publication Critical patent/JP2012513117A/ja
Publication of JP2012513117A5 publication Critical patent/JP2012513117A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
JP2011542184A 2008-12-18 2009-11-19 低温ギャップフィル改善のための酸化シリコンｃｖｄへの前駆体添加 Pending JP2012513117A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13886408P 2008-12-18 2008-12-18
US61/138,864 2008-12-18
US12/489,234 2009-06-22
US12/489,234 US8012887B2 (en) 2008-12-18 2009-06-22 Precursor addition to silicon oxide CVD for improved low temperature gapfill
PCT/US2009/065181 WO2010080216A2 (en) 2008-12-18 2009-11-19 Precursor addition to silicon oxide cvd for improved low temperature gapfill

Publications (2)

Publication Number Publication Date
JP2012513117A true JP2012513117A (ja) 2012-06-07
JP2012513117A5 JP2012513117A5 (enExample) 2013-01-10

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JP2011542184A Pending JP2012513117A (ja) 2008-12-18 2009-11-19 低温ギャップフィル改善のための酸化シリコンｃｖｄへの前駆体添加

Country Status (6)

Country Link
US (1) US8012887B2 (enExample)
JP (1) JP2012513117A (enExample)
KR (1) KR20110104062A (enExample)
CN (1) CN102282649A (enExample)
TW (1) TWI395831B (enExample)
WO (1) WO2010080216A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8476142B2 (en) 2010-04-12 2013-07-02 Applied Materials, Inc. Preferential dielectric gapfill
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) * 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
US20130252440A1 (en) * 2011-09-26 2013-09-26 Applied Materials, Inc. Pretreatment and improved dielectric coverage
KR101862547B1 (ko) 2012-04-13 2018-05-31 삼성전자주식회사 폴리실리콘막 형성 방법 및 반도체 장치의 제조 방법
CN102709426A (zh) * 2012-06-11 2012-10-03 华灿光电股份有限公司 一种表面粗化的GaN基LED芯片的制作方法
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
CN107660307B (zh) * 2015-06-26 2021-11-05 应用材料公司 氧化硅膜的选择性沉积
US10264663B1 (en) 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
US10872762B2 (en) * 2017-11-08 2020-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming silicon oxide layer and semiconductor structure
US10672590B2 (en) * 2018-03-14 2020-06-02 Lam Research Corporation Frequency tuning for a matchless plasma source
JP7076490B2 (ja) 2020-03-24 2022-05-27 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
US11404465B2 (en) * 2020-06-15 2022-08-02 Taiwan Semiconductor Manufacturing Company Limited Epitaxial semiconductor liner for enhancing uniformity of a charged layer in a deep trench and methods of forming the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121568A (ja) * 1991-05-21 1993-05-18 Fujitsu Ltd 半導体装置の製造方法
JP2005513766A (ja) * 2001-12-14 2005-05-12 アプライド　マテリアルズ　インコーポレイテッド ダマシン適用において誘電体材料を堆積する方法
JP2006339506A (ja) * 2005-06-03 2006-12-14 Semiconductor Process Laboratory Co Ltd 成膜方法及び半導体装置の製造方法
WO2007140376A2 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. A method for depositing and curing low-k films for gapfill and conformal film applications
JP2008135755A (ja) * 2006-11-28 2008-06-12 Air Products & Chemicals Inc 酸化ケイ素および窒化ケイ素膜の誘電的特性を変更するための有機シラン化合物
JP2008227511A (ja) * 2007-03-15 2008-09-25 Applied Materials Inc 誘電体材料を含有するシリコンの形成過程における改良されたギャップ充填堆積
JP2009032911A (ja) * 2007-07-27 2009-02-12 Meidensha Corp 酸化膜形成方法及びその装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008540A (en) * 1997-05-28 1999-12-28 Texas Instruments Incorporated Integrated circuit dielectric and method
US6727190B2 (en) * 1998-09-03 2004-04-27 Micron Technology, Inc. Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials
US20020090834A1 (en) 2000-12-18 2002-07-11 Lee Wei William Method for depositing silicon dioxide on a substrate surface using hexamethyldisiloxane (HMDSO) as a precursor gas
US6583048B2 (en) * 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
US6596654B1 (en) 2001-08-24 2003-07-22 Novellus Systems, Inc. Gap fill for high aspect ratio structures
US6905940B2 (en) 2002-09-19 2005-06-14 Applied Materials, Inc. Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
US7456116B2 (en) 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US7087536B2 (en) 2004-09-01 2006-08-08 Applied Materials Silicon oxide gapfill deposition using liquid precursors
TWI263301B (en) * 2006-01-26 2006-10-01 United Microelectronics Corp Porous low-k dielectric film and fabrication method thereof
US7297376B1 (en) * 2006-07-07 2007-11-20 Applied Materials, Inc. Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121568A (ja) * 1991-05-21 1993-05-18 Fujitsu Ltd 半導体装置の製造方法
JP2005513766A (ja) * 2001-12-14 2005-05-12 アプライド　マテリアルズ　インコーポレイテッド ダマシン適用において誘電体材料を堆積する方法
JP2006339506A (ja) * 2005-06-03 2006-12-14 Semiconductor Process Laboratory Co Ltd 成膜方法及び半導体装置の製造方法
WO2007140376A2 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. A method for depositing and curing low-k films for gapfill and conformal film applications
JP2009539265A (ja) * 2006-05-30 2009-11-12 アプライド マテリアルズ インコーポレイテッド ギャップ充填と共形のフィルムの適用のために低ｋ膜を堆積させ硬化する方法
JP2008135755A (ja) * 2006-11-28 2008-06-12 Air Products & Chemicals Inc 酸化ケイ素および窒化ケイ素膜の誘電的特性を変更するための有機シラン化合物
JP2008227511A (ja) * 2007-03-15 2008-09-25 Applied Materials Inc 誘電体材料を含有するシリコンの形成過程における改良されたギャップ充填堆積
JP2009032911A (ja) * 2007-07-27 2009-02-12 Meidensha Corp 酸化膜形成方法及びその装置

Also Published As

Publication number Publication date
KR20110104062A (ko) 2011-09-21
CN102282649A (zh) 2011-12-14
US20100159711A1 (en) 2010-06-24
US8012887B2 (en) 2011-09-06
TWI395831B (zh) 2013-05-11
WO2010080216A3 (en) 2010-08-26
TW201030175A (en) 2010-08-16
WO2010080216A2 (en) 2010-07-15

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