JP6867390B2 - エッチング用組成物及びそれを用いた半導体素子の製造方法 - Google Patents
エッチング用組成物及びそれを用いた半導体素子の製造方法 Download PDFInfo
- Publication number
- JP6867390B2 JP6867390B2 JP2018528949A JP2018528949A JP6867390B2 JP 6867390 B2 JP6867390 B2 JP 6867390B2 JP 2018528949 A JP2018528949 A JP 2018528949A JP 2018528949 A JP2018528949 A JP 2018528949A JP 6867390 B2 JP6867390 B2 JP 6867390B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- carbon atoms
- chemical formula
- etching
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 title claims description 214
- 239000000203 mixture Substances 0.000 title claims description 154
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000000126 substance Substances 0.000 claims description 350
- 125000004432 carbon atom Chemical group C* 0.000 claims description 221
- -1 alkyl phosphite Chemical compound 0.000 claims description 160
- 229910000077 silane Inorganic materials 0.000 claims description 117
- 150000001875 compounds Chemical class 0.000 claims description 95
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 90
- 238000000034 method Methods 0.000 claims description 79
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 74
- 125000005843 halogen group Chemical group 0.000 claims description 61
- 125000003545 alkoxy group Chemical group 0.000 claims description 59
- 150000007522 mineralic acids Chemical class 0.000 claims description 58
- 125000000217 alkyl group Chemical group 0.000 claims description 52
- 125000003118 aryl group Chemical group 0.000 claims description 49
- 239000000654 additive Substances 0.000 claims description 36
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 34
- 230000000996 additive effect Effects 0.000 claims description 33
- 229920000137 polyphosphoric acid Polymers 0.000 claims description 21
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 18
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 16
- 125000004103 aminoalkyl group Chemical group 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 125000002431 aminoalkoxy group Chemical group 0.000 claims description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims description 11
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 125000004448 alkyl carbonyl group Chemical group 0.000 claims description 8
- 150000003868 ammonium compounds Chemical class 0.000 claims description 8
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 claims description 7
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 claims description 6
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 claims description 6
- 229940005657 pyrophosphoric acid Drugs 0.000 claims description 6
- HIFJUMGIHIZEPX-UHFFFAOYSA-N sulfuric acid;sulfur trioxide Chemical compound O=S(=O)=O.OS(O)(=O)=O HIFJUMGIHIZEPX-UHFFFAOYSA-N 0.000 claims description 6
- 125000003342 alkenyl group Chemical group 0.000 claims description 5
- GJYJYFHBOBUTBY-UHFFFAOYSA-N alpha-camphorene Chemical compound CC(C)=CCCC(=C)C1CCC(CCC=C(C)C)=CC1 GJYJYFHBOBUTBY-UHFFFAOYSA-N 0.000 claims description 5
- NFORZJQPTUSMRL-UHFFFAOYSA-N dipropan-2-yl hydrogen phosphite Chemical compound CC(C)OP(O)OC(C)C NFORZJQPTUSMRL-UHFFFAOYSA-N 0.000 claims description 5
- XTTGYFREQJCEML-UHFFFAOYSA-N tributyl phosphite Chemical compound CCCCOP(OCCCC)OCCCC XTTGYFREQJCEML-UHFFFAOYSA-N 0.000 claims description 5
- SJHCUXCOGGKFAI-UHFFFAOYSA-N tripropan-2-yl phosphite Chemical compound CC(C)OP(OC(C)C)OC(C)C SJHCUXCOGGKFAI-UHFFFAOYSA-N 0.000 claims description 5
- UFFAFBPZFGAMJJ-UHFFFAOYSA-N (2-methoxy-4,6-dimethylphenyl)boronic acid Chemical compound COC1=CC(C)=CC(C)=C1B(O)O UFFAFBPZFGAMJJ-UHFFFAOYSA-N 0.000 claims description 4
- CZHYKKAKFWLGJO-UHFFFAOYSA-N dimethyl phosphite Chemical compound COP([O-])OC CZHYKKAKFWLGJO-UHFFFAOYSA-N 0.000 claims description 4
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 4
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 claims description 4
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 claims description 4
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 3
- 125000002723 alicyclic group Chemical group 0.000 claims description 3
- 125000005196 alkyl carbonyloxy group Chemical group 0.000 claims description 3
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 125000004966 cyanoalkyl group Chemical group 0.000 claims description 3
- BVXOPEOQUQWRHQ-UHFFFAOYSA-N dibutyl phosphite Chemical compound CCCCOP([O-])OCCCC BVXOPEOQUQWRHQ-UHFFFAOYSA-N 0.000 claims description 3
- LXCYSACZTOKNNS-UHFFFAOYSA-N diethoxy(oxo)phosphanium Chemical compound CCO[P+](=O)OCC LXCYSACZTOKNNS-UHFFFAOYSA-N 0.000 claims description 3
- TVZISJTYELEYPI-UHFFFAOYSA-N hypodiphosphoric acid Chemical compound OP(O)(=O)P(O)(O)=O TVZISJTYELEYPI-UHFFFAOYSA-N 0.000 claims description 3
- 229910001380 potassium hypophosphite Inorganic materials 0.000 claims description 3
- CRGPNLUFHHUKCM-UHFFFAOYSA-M potassium phosphinate Chemical compound [K+].[O-]P=O CRGPNLUFHHUKCM-UHFFFAOYSA-M 0.000 claims description 3
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 3
- QMJUEAKSVSCCQL-UHFFFAOYSA-N benzyl phosphite Chemical compound [O-]P([O-])OCC1=CC=CC=C1 QMJUEAKSVSCCQL-UHFFFAOYSA-N 0.000 claims description 2
- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical class [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 claims description 2
- QOPBTFMUVTXWFF-UHFFFAOYSA-N tripropyl phosphite Chemical compound CCCOP(OCCC)OCCC QOPBTFMUVTXWFF-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 4
- 229910019142 PO4 Inorganic materials 0.000 claims 1
- 150000002222 fluorine compounds Chemical class 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 1
- 239000010452 phosphate Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 248
- 150000004767 nitrides Chemical class 0.000 description 87
- 230000008569 process Effects 0.000 description 67
- 125000001424 substituent group Chemical group 0.000 description 43
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 34
- 125000005647 linker group Chemical group 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 19
- 239000002245 particle Substances 0.000 description 15
- 125000001309 chloro group Chemical group Cl* 0.000 description 14
- 125000001153 fluoro group Chemical group F* 0.000 description 14
- PULCKIYKBGOTTG-UHFFFAOYSA-N n-(2,4-dimethylpentan-3-ylidene)hydroxylamine Chemical compound CC(C)C(=NO)C(C)C PULCKIYKBGOTTG-UHFFFAOYSA-N 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 13
- 238000000926 separation method Methods 0.000 description 13
- 239000007805 chemical reaction reactant Substances 0.000 description 12
- 239000012528 membrane Substances 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 8
- NAQQTJZRCYNBRX-UHFFFAOYSA-N n-pentan-3-ylidenehydroxylamine Chemical compound CCC(CC)=NO NAQQTJZRCYNBRX-UHFFFAOYSA-N 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 125000001246 bromo group Chemical group Br* 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000007983 Tris buffer Substances 0.000 description 6
- 239000000872 buffer Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 125000002346 iodo group Chemical group I* 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 5
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 5
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- VEZUQRBDRNJBJY-UHFFFAOYSA-N cyclohexanone oxime Chemical compound ON=C1CCCCC1 VEZUQRBDRNJBJY-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- IGXAXQHBULUZNQ-UHFFFAOYSA-N n-(2,3,5,6-tetramethylheptan-4-ylidene)hydroxylamine Chemical compound CC(C)C(C)C(=NO)C(C)C(C)C IGXAXQHBULUZNQ-UHFFFAOYSA-N 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 4
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 4
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 4
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910021341 titanium silicide Inorganic materials 0.000 description 3
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- FZENGILVLUJGJX-IHWYPQMZSA-N (Z)-acetaldehyde oxime Chemical compound C\C=N/O FZENGILVLUJGJX-IHWYPQMZSA-N 0.000 description 2
- JHNRZXQVBKRYKN-VQHVLOKHSA-N (ne)-n-(1-phenylethylidene)hydroxylamine Chemical compound O\N=C(/C)C1=CC=CC=C1 JHNRZXQVBKRYKN-VQHVLOKHSA-N 0.000 description 2
- HXVNBWAKAOHACI-UHFFFAOYSA-N 2,4-dimethyl-3-pentanone Chemical compound CC(C)C(=O)C(C)C HXVNBWAKAOHACI-UHFFFAOYSA-N 0.000 description 2
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 239000004254 Ammonium phosphate Substances 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- MRZRNRPDICXPOU-UHFFFAOYSA-N [SiH4].CC(C)=NO Chemical compound [SiH4].CC(C)=NO MRZRNRPDICXPOU-UHFFFAOYSA-N 0.000 description 2
- PXAJQJMDEXJWFB-UHFFFAOYSA-N acetone oxime Chemical compound CC(C)=NO PXAJQJMDEXJWFB-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 2
- 235000019289 ammonium phosphates Nutrition 0.000 description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 2
- 235000011130 ammonium sulphate Nutrition 0.000 description 2
- 239000012935 ammoniumperoxodisulfate Substances 0.000 description 2
- 239000000010 aprotic solvent Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- DCFKHNIGBAHNSS-UHFFFAOYSA-N chloro(triethyl)silane Chemical compound CC[Si](Cl)(CC)CC DCFKHNIGBAHNSS-UHFFFAOYSA-N 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 2
- BYLOHCRAPOSXLY-UHFFFAOYSA-N dichloro(diethyl)silane Chemical compound CC[Si](Cl)(Cl)CC BYLOHCRAPOSXLY-UHFFFAOYSA-N 0.000 description 2
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 2
- HZLIIKNXMLEWPA-UHFFFAOYSA-N diethoxy(dipropyl)silane Chemical compound CCC[Si](CCC)(OCC)OCC HZLIIKNXMLEWPA-UHFFFAOYSA-N 0.000 description 2
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 2
- BZCJJERBERAQKQ-UHFFFAOYSA-N diethyl(dipropoxy)silane Chemical compound CCCO[Si](CC)(CC)OCCC BZCJJERBERAQKQ-UHFFFAOYSA-N 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
- JVUVKQDVTIIMOD-UHFFFAOYSA-N dimethoxy(dipropyl)silane Chemical compound CCC[Si](OC)(OC)CCC JVUVKQDVTIIMOD-UHFFFAOYSA-N 0.000 description 2
- ZIDTUTFKRRXWTK-UHFFFAOYSA-N dimethyl(dipropoxy)silane Chemical compound CCCO[Si](C)(C)OCCC ZIDTUTFKRRXWTK-UHFFFAOYSA-N 0.000 description 2
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 2
- AVBCBOQFOQZNFK-UHFFFAOYSA-N dipropoxy(dipropyl)silane Chemical compound CCCO[Si](CCC)(CCC)OCCC AVBCBOQFOQZNFK-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- DFJDZTPFNSXNAX-UHFFFAOYSA-N ethoxy(triethyl)silane Chemical compound CCO[Si](CC)(CC)CC DFJDZTPFNSXNAX-UHFFFAOYSA-N 0.000 description 2
- STBFUFDKXHQVMJ-UHFFFAOYSA-N ethoxy(tripropyl)silane Chemical compound CCC[Si](CCC)(CCC)OCC STBFUFDKXHQVMJ-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- WDAXFOBOLVPGLV-UHFFFAOYSA-N ethyl isobutyrate Chemical compound CCOC(=O)C(C)C WDAXFOBOLVPGLV-UHFFFAOYSA-N 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Substances CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- FUMSHFZKHQOOIX-UHFFFAOYSA-N methoxy(tripropyl)silane Chemical compound CCC[Si](CCC)(CCC)OC FUMSHFZKHQOOIX-UHFFFAOYSA-N 0.000 description 2
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 2
- WHIVNJATOVLWBW-SNAWJCMRSA-N methylethyl ketone oxime Chemical compound CC\C(C)=N\O WHIVNJATOVLWBW-SNAWJCMRSA-N 0.000 description 2
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- KUVPEPZUXRFFOD-UHFFFAOYSA-N n-cyclodecylidenehydroxylamine Chemical compound ON=C1CCCCCCCCC1 KUVPEPZUXRFFOD-UHFFFAOYSA-N 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 239000002367 phosphate rock Substances 0.000 description 2
- IEKMLKYASCBALX-UHFFFAOYSA-N propoxy(tripropyl)silane Chemical compound CCCO[Si](CCC)(CCC)CCC IEKMLKYASCBALX-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 2
- HUZZQXYTKNNCOU-UHFFFAOYSA-N triethyl(methoxy)silane Chemical compound CC[Si](CC)(CC)OC HUZZQXYTKNNCOU-UHFFFAOYSA-N 0.000 description 2
- RXJWOBGGPLEFEE-UHFFFAOYSA-N triethyl(propoxy)silane Chemical compound CCCO[Si](CC)(CC)CC RXJWOBGGPLEFEE-UHFFFAOYSA-N 0.000 description 2
- PHPGKIATZDCVHL-UHFFFAOYSA-N trimethyl(propoxy)silane Chemical compound CCCO[Si](C)(C)C PHPGKIATZDCVHL-UHFFFAOYSA-N 0.000 description 2
- VUWVDNLZJXLQPT-UHFFFAOYSA-N tripropoxy(propyl)silane Chemical compound CCCO[Si](CCC)(OCCC)OCCC VUWVDNLZJXLQPT-UHFFFAOYSA-N 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- HNAGHMKIPMKKBB-UHFFFAOYSA-N 1-benzylpyrrolidine-3-carboxamide Chemical compound C1C(C(=O)N)CCN1CC1=CC=CC=C1 HNAGHMKIPMKKBB-UHFFFAOYSA-N 0.000 description 1
- UHOPWFKONJYLCF-UHFFFAOYSA-N 2-(2-sulfanylethyl)isoindole-1,3-dione Chemical compound C1=CC=C2C(=O)N(CCS)C(=O)C2=C1 UHOPWFKONJYLCF-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- GLISOBUNKGBQCL-UHFFFAOYSA-N 3-[ethoxy(dimethyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(C)CCCN GLISOBUNKGBQCL-UHFFFAOYSA-N 0.000 description 1
- KCJAIHQXOQUWTI-UHFFFAOYSA-N 3-tris(trimethylsilyloxy)silylpropan-1-amine Chemical compound C[Si](C)(C)O[Si](O[Si](C)(C)C)(O[Si](C)(C)C)CCCN KCJAIHQXOQUWTI-UHFFFAOYSA-N 0.000 description 1
- YQHDQYPKFWETPO-UHFFFAOYSA-N 4-[methoxy(dimethyl)silyl]butan-1-amine Chemical compound CO[Si](C)(C)CCCCN YQHDQYPKFWETPO-UHFFFAOYSA-N 0.000 description 1
- XMFCIYUZZWZEHI-UHFFFAOYSA-N 4-[methoxy(dimethyl)silyl]butanenitrile Chemical compound CO[Si](C)(C)CCCC#N XMFCIYUZZWZEHI-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- OBQJRAZGDQSCTC-UHFFFAOYSA-N CCC=[O](C)(C)=C1CCCC1 Chemical compound CCC=[O](C)(C)=C1CCCC1 OBQJRAZGDQSCTC-UHFFFAOYSA-N 0.000 description 1
- 0 C[*+]S(**)(O[Si](*)(OS(O)(=N)=O)OS(O*(*)(*)O[Si](*)(OS(O)(=O)=O)I)(=O)=O)OS(O)(=O)=O Chemical compound C[*+]S(**)(O[Si](*)(OS(O)(=N)=O)OS(O*(*)(*)O[Si](*)(OS(O)(=O)=O)I)(=O)=O)OS(O)(=O)=O 0.000 description 1
- MIBQLXWTMMZTJF-UHFFFAOYSA-N C[Si](OC(O[Si](C)(C)C)(O[Si](C)(C)C)[SiH3])(C)C.C[Si](O[Si](C)(O[Si](C)(C)C)O[Si](C)(C)C)(C)C Chemical compound C[Si](OC(O[Si](C)(C)C)(O[Si](C)(C)C)[SiH3])(C)C.C[Si](O[Si](C)(O[Si](C)(C)C)O[Si](C)(C)C)(C)C MIBQLXWTMMZTJF-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- ZFGPJOVCOFYSBS-UHFFFAOYSA-N N-[bis(diethylaminosilyloxy)-methylsilyl]oxysilyl-N-ethylethanamine Chemical compound C(C)N(CC)[SiH2]O[Si](C)(O[SiH2]N(CC)CC)O[SiH2]N(CC)CC ZFGPJOVCOFYSBS-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 241001483078 Phyto Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- NMLJWWANBLFBTD-UHFFFAOYSA-N [chloro(dimethyl)silyl] triethyl silicate Chemical compound C(C)O[Si](O[Si](C)(C)Cl)(OCC)OCC NMLJWWANBLFBTD-UHFFFAOYSA-N 0.000 description 1
- USXPORRDRMUQSB-UHFFFAOYSA-N [chloro(dimethyl)silyl] trimethyl silicate Chemical compound CO[Si](O[Si](C)(C)Cl)(OC)OC USXPORRDRMUQSB-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OBNCKNCVKJNDBV-UHFFFAOYSA-N butanoic acid ethyl ester Natural products CCCC(=O)OCC OBNCKNCVKJNDBV-UHFFFAOYSA-N 0.000 description 1
- SXPLZNMUBFBFIA-UHFFFAOYSA-N butyl(trimethoxy)silane Chemical compound CCCC[Si](OC)(OC)OC SXPLZNMUBFBFIA-UHFFFAOYSA-N 0.000 description 1
- VNVRPYPOLKSSCA-UHFFFAOYSA-N butyl-methoxy-dimethylsilane Chemical compound CCCC[Si](C)(C)OC VNVRPYPOLKSSCA-UHFFFAOYSA-N 0.000 description 1
- 229950005499 carbon tetrachloride Drugs 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- ACTAPAGNZPZLEF-UHFFFAOYSA-N chloro(tripropyl)silane Chemical compound CCC[Si](Cl)(CCC)CCC ACTAPAGNZPZLEF-UHFFFAOYSA-N 0.000 description 1
- CXIMXHWYSUUYSO-UHFFFAOYSA-N chloro-(2,2-dichloroethylsilyloxy)-dimethylsilane Chemical compound ClC(C[SiH2]O[Si](C)(C)Cl)Cl CXIMXHWYSUUYSO-UHFFFAOYSA-N 0.000 description 1
- CVOXVZZKYOQQIY-UHFFFAOYSA-N chloro-(chloromethyl)-diethylsilyloxy-methylsilane Chemical compound ClC[Si](C)(Cl)O[SiH](CC)CC CVOXVZZKYOQQIY-UHFFFAOYSA-N 0.000 description 1
- WBUSLJAAQVHDPS-UHFFFAOYSA-N chloro-(chloromethyl)-dimethylsilyloxy-methylsilane Chemical compound ClC[Si](C)(Cl)O[SiH](C)C WBUSLJAAQVHDPS-UHFFFAOYSA-N 0.000 description 1
- LFYSTAKGDIOTJQ-UHFFFAOYSA-N chloro-(dichloromethyl)-dimethylsilyloxysilane Chemical compound Cl[SiH](C(Cl)Cl)O[SiH](C)C LFYSTAKGDIOTJQ-UHFFFAOYSA-N 0.000 description 1
- CZHHXSFNQBJMTF-UHFFFAOYSA-N chloro-(dichloromethylsilyloxy)-dimethylsilane Chemical compound ClC(Cl)[SiH2]O[Si](C)(C)Cl CZHHXSFNQBJMTF-UHFFFAOYSA-N 0.000 description 1
- IHIVQDTVOIBBRE-UHFFFAOYSA-N chloro-(diethoxymethylsilyloxy)-dimethylsilane Chemical compound C(C)OC(OCC)[SiH2]O[Si](C)(C)Cl IHIVQDTVOIBBRE-UHFFFAOYSA-N 0.000 description 1
- NFCNDJVXPYJSSR-UHFFFAOYSA-N chloro-(difluoromethylsilyloxy)-dimethylsilane Chemical compound FC(F)[SiH2]O[Si](C)(C)Cl NFCNDJVXPYJSSR-UHFFFAOYSA-N 0.000 description 1
- FJUMXTOOFYNTEB-UHFFFAOYSA-N chloro-(dimethoxymethylsilyloxy)-dimethylsilane Chemical compound COC(OC)[SiH2]O[Si](C)(C)Cl FJUMXTOOFYNTEB-UHFFFAOYSA-N 0.000 description 1
- GKDDHPFVACLWSB-UHFFFAOYSA-N chloro-dimethyl-trifluorosilyloxysilane Chemical compound F[Si](O[Si](C)(C)Cl)(F)F GKDDHPFVACLWSB-UHFFFAOYSA-N 0.000 description 1
- YUVXRTOSEYDYJY-UHFFFAOYSA-N chloro-dimethylsilyloxy-(ethoxymethyl)-methylsilane Chemical compound C(C)OC[Si](C)(Cl)O[SiH](C)C YUVXRTOSEYDYJY-UHFFFAOYSA-N 0.000 description 1
- FFABYDVKAHNUOH-UHFFFAOYSA-N chloro-dimethylsilyloxy-(methoxymethyl)-methylsilane Chemical compound COC[Si](C)(Cl)O[SiH](C)C FFABYDVKAHNUOH-UHFFFAOYSA-N 0.000 description 1
- 229960001701 chloroform Drugs 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- UOZZKLIPYZQXEP-UHFFFAOYSA-N dichloro(dipropyl)silane Chemical compound CCC[Si](Cl)(Cl)CCC UOZZKLIPYZQXEP-UHFFFAOYSA-N 0.000 description 1
- 125000004772 dichloromethyl group Chemical group [H]C(Cl)(Cl)* 0.000 description 1
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 1
- OJBGGLLCYJYHPG-UHFFFAOYSA-N diethyl(difluoro)silane Chemical compound CC[Si](F)(F)CC OJBGGLLCYJYHPG-UHFFFAOYSA-N 0.000 description 1
- XRRDNAZMVAXXQP-UHFFFAOYSA-N difluoro(dimethyl)silane Chemical compound C[Si](C)(F)F XRRDNAZMVAXXQP-UHFFFAOYSA-N 0.000 description 1
- OMZDGOHZDWOQKM-UHFFFAOYSA-N difluoro(propyl)silane Chemical compound CCC[SiH](F)F OMZDGOHZDWOQKM-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- NHOREJPMXSLGGR-UHFFFAOYSA-N ethyl(trifluoro)silane Chemical compound CC[Si](F)(F)F NHOREJPMXSLGGR-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- KUCGHDUQOVVQED-UHFFFAOYSA-N ethyl(tripropoxy)silane Chemical compound CCCO[Si](CC)(OCCC)OCCC KUCGHDUQOVVQED-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- CTIKAHQFRQTTAY-UHFFFAOYSA-N fluoro(trimethyl)silane Chemical compound C[Si](C)(C)F CTIKAHQFRQTTAY-UHFFFAOYSA-N 0.000 description 1
- DMTSDXQHAYTVGH-UHFFFAOYSA-N fluoro(tripropyl)silane Chemical compound CCC[Si](F)(CCC)CCC DMTSDXQHAYTVGH-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- OGMDYZVGIYQLCM-UHFFFAOYSA-N hexyl(dimethoxy)silane Chemical compound CCCCCC[SiH](OC)OC OGMDYZVGIYQLCM-UHFFFAOYSA-N 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- UCFRVQXGPJMWPG-UHFFFAOYSA-N n-(2,6-dimethylheptan-4-ylidene)hydroxylamine Chemical compound CC(C)CC(=NO)CC(C)C UCFRVQXGPJMWPG-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- RQKYHDHLEMEVDR-UHFFFAOYSA-N oxo-bis(phenylmethoxy)phosphanium Chemical compound C=1C=CC=CC=1CO[P+](=O)OCC1=CC=CC=C1 RQKYHDHLEMEVDR-UHFFFAOYSA-N 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- ZMYXZXUHYAGGKG-UHFFFAOYSA-N propoxysilane Chemical compound CCCO[SiH3] ZMYXZXUHYAGGKG-UHFFFAOYSA-N 0.000 description 1
- 239000005053 propyltrichlorosilane Substances 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- VNRWTCZXQWOWIG-UHFFFAOYSA-N tetrakis(trimethylsilyl) silicate Chemical compound C[Si](C)(C)O[Si](O[Si](C)(C)C)(O[Si](C)(C)C)O[Si](C)(C)C VNRWTCZXQWOWIG-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- QHXRLTWZMMOIBS-UHFFFAOYSA-N trichloro(dichloromethylsilyloxy)silane Chemical compound Cl[Si](O[SiH2]C(Cl)Cl)(Cl)Cl QHXRLTWZMMOIBS-UHFFFAOYSA-N 0.000 description 1
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 1
- DOEHJNBEOVLHGL-UHFFFAOYSA-N trichloro(propyl)silane Chemical compound CCC[Si](Cl)(Cl)Cl DOEHJNBEOVLHGL-UHFFFAOYSA-N 0.000 description 1
- QHAHOIWVGZZELU-UHFFFAOYSA-N trichloro(trichlorosilyloxy)silane Chemical compound Cl[Si](Cl)(Cl)O[Si](Cl)(Cl)Cl QHAHOIWVGZZELU-UHFFFAOYSA-N 0.000 description 1
- WYCBAFYXQLEQIO-UHFFFAOYSA-N trichloro-[chloro(dimethyl)silyl]oxysilane Chemical compound C[Si](C)(Cl)O[Si](Cl)(Cl)Cl WYCBAFYXQLEQIO-UHFFFAOYSA-N 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- ALVYUZIFSCKIFP-UHFFFAOYSA-N triethoxy(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(OCC)OCC ALVYUZIFSCKIFP-UHFFFAOYSA-N 0.000 description 1
- QVMRVWAOMIXFFW-UHFFFAOYSA-N triethyl(fluoro)silane Chemical compound CC[Si](F)(CC)CC QVMRVWAOMIXFFW-UHFFFAOYSA-N 0.000 description 1
- BHOCBLDBJFCBQS-UHFFFAOYSA-N trifluoro(methyl)silane Chemical compound C[Si](F)(F)F BHOCBLDBJFCBQS-UHFFFAOYSA-N 0.000 description 1
- JGHTXIKECBJCFI-UHFFFAOYSA-N trifluoro(propyl)silane Chemical compound CCC[Si](F)(F)F JGHTXIKECBJCFI-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- SGLFWYWGTJDPPC-UHFFFAOYSA-N trimethyl(pentyl)silane Chemical compound CCCCC[Si](C)(C)C SGLFWYWGTJDPPC-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 1
- XAASNKQYFKTYTR-UHFFFAOYSA-N tris(trimethylsilyloxy)silicon Chemical compound C[Si](C)(C)O[Si](O[Si](C)(C)C)O[Si](C)(C)C XAASNKQYFKTYTR-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
- Silicon Polymers (AREA)
- Drying Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Description
下記表1に示すように、シラン無機酸塩を製造した。
下記表2に示すように、第1添加剤を含まず、第2添加剤としてそれぞれ下記表2に示された化合物を、及び、第1無機酸としてリン酸を、組成物の総重量に対して示されたそれぞれの重量比で混合して、エッチング用組成物を製造した。第1無機酸は、85%の受容液を利用した。
前記参考例で製造されたエッチング用組成物を用いて、157℃の工程温度で窒化膜及び酸化膜に対するエッチングを行い、薄膜厚さの測定装備であるエリプソメーター(NANO VIEW、SEMG−1000)を用いて、窒化膜及び酸化膜に対するエッチング速度及び選択比を測定した。その結果を下記表3に示す。エッチング速度は、それぞれの膜を300秒間エッチングした後、それぞれの膜のエッチング処理前の膜厚とエッチング処理後の膜厚との違いを、エッチング時間(分)で割って算出した数値であり、選択比は酸化膜エッチング速度に対する窒化膜エッチング速度の比を示す。
下記表5に示すように、第1添加剤としてそれぞれ下記表5に示された化合物を、第2添加剤としてそれぞれ下記表5に示された化合物を、及び、第1無機酸としてリン酸を、組成物の総重量に対して示されたそれぞれの重量比で混合して、エッチング用組成物を製造した。第1無機酸は、85%の受容液を利用した。
前記実施例で製造されたエッチング用組成物に対して、上述したように、実際に高温リン酸工程を模写した後、157℃の工程温度で窒化膜及び酸化膜に対するエッチングを行い、薄膜厚さの測定装備であるエリプソメーター(NANO VIEW、SEMG−1000)を用いて、窒化膜及び酸化膜に対するエッチング速度及び選択比を測定した。その結果を下記表6に示す。
21 トンネル酸化膜
22 ポリシリコン膜
23 バッファ酸化膜
24 パッド窒化膜
25 トレンチ
26 酸化膜
26A 素子分離膜
31 パイプゲート電極膜
32、35 窒化膜
33 第1層間絶縁膜
34 第1ゲート電極膜
36 犠牲膜
37 第2層間絶縁膜
38 第2ゲート電極膜
41 導電領域
42 ポリシリコン膜
43 チタニウムシリサイド膜
44 チタニウム窒化膜
45 窒化膜
46 酸化膜
Claims (19)
- 第1無機酸としてのリン酸と、
亜リン酸(phosphorous acid)、有機亜リン酸塩(organic phosphite)、次亜リン酸塩(hypophosphite)、及びこれらの混合物からなる群より選択されるいずれか一つの第1添加剤と、
溶媒と
を含む、シリコン窒化膜エッチング用組成物。 - 前記有機亜リン酸塩は、ジメチルホスファイト(dimethyl phosphite)、ジエチルホスファイト(diethyl phosphite)、ジプロピルホスファイト(dipropyl phosphite)、ジイソプロピルホスファイト(diisopropyl phosphite)、ジブチルホスファイト(dibuthyl phosphite)、トリメチルホスファイト(trimethyl phosphite)、トリエチルホスファイト(triethyl phosphite)、トリプロピルホスファイト(tripropyl phosphite)、トリイソプロピルホスファイト(triisopropyl phosphite)、トリブチルホスファイト(tributhyl phosphite)、ジフェニルホスファイト(diphenyl phosphite)、ジベンジルホスファイト(dibenzyl phosphite)、及びこれらの混合物からなる群より選択されるいずれか一つのアルキル亜リン酸塩である、請求項1に記載のシリコン窒化膜エッチング用組成物。
- 前記次亜リン酸塩は、アンモニウムヒポホスファイト(ammonium hypophosphite)、ソジウムヒポホスファイト(sodium hypophosphite)、カリウムヒポホスファイト(potassium hypophosphite)、及びこれらの混合物からなる群より選択されるいずれか一つである、請求項1に記載のシリコン窒化膜エッチング用組成物。
- 0.01〜15重量%の前記第1添加剤と、70〜99重量%の前記第1無機酸と、残部の溶媒とを含む、請求項1に記載のシリコン窒化膜エッチング用組成物。
- シラン無機酸塩、アルコキシシラン化合物、シロキサン化合物、オキシム化合物、オキシムシラン化合物、及びこれらの混合物からなる群より選択されるいずれか一つを含む第2添加剤をさらに含む、請求項1に記載のシリコン窒化膜エッチング用組成物。
- 前記シラン無機酸塩は、硫酸、発煙硫酸、硝酸、リン酸、無水リン酸、ピロリン酸、ポリリン酸、及びこれらの混合物からなる群より選択されるいずれか一つの第2無機酸と、下記化学式10で表されるシラン化合物とを反応させてなるシラン無機酸塩である、請求項5に記載のシリコン窒化膜エッチング用組成物:
(化学式10)
前記R1〜R4は、それぞれ独立して水素原子、ハロゲン原子、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基、及び炭素数6〜30のアリール基からなる群より選択されるいずれか一つであり、前記R1〜R4のうち少なくとも一つは、ハロゲン原子又は炭素数1〜10のアルコキシ基である。 - 前記シラン無機酸塩は、硫酸、発煙硫酸、硝酸、リン酸、無水リン酸、ピロリン酸、ポリリン酸、及びこれらの混合物からなる群より選択されるいずれか一つの第2無機酸と、下記化学式20で表されるシロキサン化合物とを反応させてなるシロキサン無機酸塩である、請求項5に記載のシリコン窒化膜エッチング用組成物:
(化学式20)
前記R5〜R10は、それぞれ独立して水素原子、ハロゲン原子、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基、及び炭素数6〜30のアリール基からなる群より選択されるいずれか一つであり、
前記R5〜R10のうち少なくとも一つは、ハロゲン原子又は炭素数1〜10のアルコキシ基であり、
前記nは、1〜10の整数である。 - 前記シロキサン無機酸塩は、下記化学式200で表される化合物を含むものである、請求項8に記載のシリコン窒化膜エッチング用組成物:
(化学式200)
前記R1〜R2は、それぞれ独立して水素原子、ハロゲン原子、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基、及び炭素数6〜30のアリール基からなる群より選択されるいずれか一つであり、
前記n1は、0〜3の整数であり、前記n2は、0〜2の整数であり、前記m1は、0又は1の整数であり、n1+n2+m1≧1を満足し、前記l1は、1〜10の整数であり、前記O1〜O3は、それぞれ独立して0〜10の整数であり、
前記R3〜R11は、それぞれ独立して水素原子である。 - 前記アルコキシシラン化合物は、下記化学式300で表される化合物を含むものである、請求項5に記載のシリコン窒化膜エッチング用組成物:
(化学式300)
前記R1〜R4は、それぞれ独立して水素原子、ハロゲン原子、ヒドロキシ基、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基、炭素数1〜10のアミノアルキル基、炭素数1〜10のアミノアルコキシ基、及び炭素数6〜30のアリール基からなる群より選択されるいずれか一つであり、
前記R1〜R4のうち少なくとも一つは、炭素数1〜10のアルコキシ基、炭素数1〜10のアミノアルキル基、又は炭素数1〜10のアミノアルコキシ基である。 - 前記シロキサン化合物は、下記化学式350で表される化合物を含むものである、請求項5に記載のシリコン窒化膜エッチング用組成物:
(化学式350)
前記R2〜R5は、それぞれ独立して水素原子、ハロゲン原子、ヒドロキシ基、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基、炭素数1〜10のアミノアルキル基、炭素数1〜10のアミノアルコキシ基、及び炭素数6〜30のアリール基からなる群より選択されるいずれか一つであり、
前記R2〜R5のうち少なくとも一つは、炭素数1〜10のアルコキシ基、炭素数1〜10のアミノアルキル基、又は炭素数1〜10のアミノアルコキシ基であり、
前記nは、1〜4の整数である。 - 前記オキシムシラン化合物は、下記化学式500で表される化合物を含むものである、請求項5に記載のシリコン窒化膜エッチング用組成物:
(化学式500)
前記R1〜R3は、それぞれ独立して水素原子、ハロゲン原子、炭素数1〜20のアルキル基、炭素数2〜20のアルケニル基、炭素数3〜20のシクロアルキル基、炭素数6〜20のアリール基、炭素数7〜20のアリールアルキル基、及び炭素数1〜20のアルキルカルボニル基からなる群より選択されるいずれか一つであり、
前記R4及びR5は、それぞれ独立して炭素数1〜20のアルキル基、炭素数3〜20のシクロアルキル基、炭素数6〜20のアリール基、炭素数7〜20のアリールアルキル基、及び炭素数1〜20のアルキルカルボニル基からなる群より選択されるいずれか一つであるか、若しくは前記R4及びR5は、炭素数3〜12のアルキレン基として互いに連結し合って脂環族環を形成し、
前記x、y、及びzは、それぞれ独立して0〜3の整数であり、x+y+zは、0〜3の整数である。 - 前記第2添加剤を、組成物全体の0.01〜20重量%の量で含む、請求項5に記載のシリコン窒化膜エッチング用組成物。
- 組成物全体に対して、0.01〜20重量%のアンモニウム系化合物及び/又は0.01〜1重量%のフッ素系化合物をさらに含む、請求項1に記載のシリコン窒化膜エッチング用組成物。
- 請求項1に記載のシリコン窒化膜エッチング用組成物を用いて行うシリコン窒化膜エッチング工程を含む、半導体素子の製造方法。
- 前記シリコン窒化膜エッチング工程は、シリコン酸化膜に対してシリコン窒化膜を選択的にエッチングするものであり、
前記シリコン窒化膜のエッチング工程を、50〜300℃の温度で行う、請求項18に記載の半導体素子の製造方法。
Applications Claiming Priority (15)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2015-0172472 | 2015-12-04 | ||
KR20150172472 | 2015-12-04 | ||
KR1020150178778A KR102545804B1 (ko) | 2015-12-04 | 2015-12-15 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
KR1020150178776A KR102545802B1 (ko) | 2015-12-04 | 2015-12-15 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
KR10-2015-0178776 | 2015-12-15 | ||
KR10-2015-0178774 | 2015-12-15 | ||
KR10-2015-0178777 | 2015-12-15 | ||
KR10-2015-0178775 | 2015-12-15 | ||
KR1020150178774A KR102545800B1 (ko) | 2015-12-04 | 2015-12-15 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
KR1020150178772A KR102545799B1 (ko) | 2015-12-04 | 2015-12-15 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
KR10-2015-0178772 | 2015-12-15 | ||
KR1020150178775A KR102545801B1 (ko) | 2015-12-04 | 2015-12-15 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
KR1020150178777A KR102545803B1 (ko) | 2015-12-04 | 2015-12-15 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
KR10-2015-0178778 | 2015-12-15 | ||
PCT/KR2016/012215 WO2017095022A1 (ko) | 2015-12-04 | 2016-10-28 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018538692A JP2018538692A (ja) | 2018-12-27 |
JP6867390B2 true JP6867390B2 (ja) | 2021-04-28 |
Family
ID=59218266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018528949A Active JP6867390B2 (ja) | 2015-12-04 | 2016-10-28 | エッチング用組成物及びそれを用いた半導体素子の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (9) | US11149200B2 (ja) |
EP (1) | EP3385353B1 (ja) |
JP (1) | JP6867390B2 (ja) |
KR (6) | KR102545800B1 (ja) |
CN (1) | CN108291132B (ja) |
PL (1) | PL3385353T3 (ja) |
SG (2) | SG10202005212QA (ja) |
TW (1) | TWI767894B (ja) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9868902B2 (en) * | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
CN109689838A (zh) * | 2016-12-26 | 2019-04-26 | 秀博瑞殷株式公社 | 蚀刻用组合物和使用该蚀刻用组合物制造半导体器件的方法 |
KR102282702B1 (ko) * | 2017-07-26 | 2021-07-28 | 오씨아이 주식회사 | 식각 조성물, 식각 방법 및 이를 이용한 반도체 소자의 제조 방법 |
KR102336865B1 (ko) * | 2017-07-06 | 2021-12-09 | 오씨아이 주식회사 | 식각 조성물 및 이를 이용한 식각 방법 |
JP7026782B2 (ja) * | 2017-09-06 | 2022-02-28 | インテグリス・インコーポレーテッド | 窒化ケイ素含有基板をエッチングするための組成物および方法 |
KR102441238B1 (ko) * | 2017-09-14 | 2022-09-08 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막에 대한 선택적 에칭을 위한 식각 조성물 및 이를 이용한 식각 방법 |
KR102599378B1 (ko) * | 2017-09-29 | 2023-11-08 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
KR102464161B1 (ko) * | 2017-11-14 | 2022-11-09 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 |
KR102629574B1 (ko) * | 2017-11-24 | 2024-01-26 | 동우 화인켐 주식회사 | 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
KR102484977B1 (ko) * | 2017-12-28 | 2023-01-09 | 오씨아이 주식회사 | 식각 조성물 및 이를 이용한 식각 방법 |
KR102439431B1 (ko) * | 2017-12-29 | 2022-09-02 | 오씨아이 주식회사 | 식각 조성물 및 이를 이용한 식각 방법 |
KR102484988B1 (ko) * | 2017-12-29 | 2023-01-09 | 오씨아이 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
KR102653096B1 (ko) * | 2018-02-13 | 2024-04-01 | 동우 화인켐 주식회사 | 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
KR102636960B1 (ko) * | 2018-02-21 | 2024-02-15 | 동우 화인켐 주식회사 | 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
KR102458646B1 (ko) * | 2018-02-28 | 2022-10-25 | 동우 화인켐 주식회사 | 실리콘-인산염 화합물 및 이의 제조 방법 |
KR101932441B1 (ko) * | 2018-03-23 | 2018-12-26 | 주식회사 제우스이엔피 | 실리콘질화막 식각액 조성물 |
KR102443313B1 (ko) * | 2018-05-18 | 2022-09-15 | 동우 화인켐 주식회사 | 실란 화합물을 포함하는 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
KR102005963B1 (ko) * | 2018-05-26 | 2019-07-31 | 에스케이이노베이션 주식회사 | 식각액 조성물 및 실란화합물 |
KR102024758B1 (ko) | 2018-05-26 | 2019-09-25 | 에스케이이노베이션 주식회사 | 식각액 조성물, 절연막의 식각방법, 반도체 소자의 제조방법 및 실란화합물 |
CN110606954B (zh) * | 2018-06-15 | 2023-03-24 | 易案爱富科技有限公司 | 聚硅氧烷类化合物、包含所述聚硅氧烷类化合物的氮化硅层蚀刻组合物 |
KR102240668B1 (ko) * | 2018-06-15 | 2021-04-15 | 주식회사 이엔에프테크놀로지 | 폴리실록산계 화합물을 포함하는 조성물 및 이를 포함하는 식각 조성물 |
KR102258316B1 (ko) * | 2018-06-25 | 2021-06-01 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 |
KR102460326B1 (ko) * | 2018-06-28 | 2022-10-31 | 오씨아이 주식회사 | 실리콘 기판 식각 용액 |
WO2020017723A1 (ko) * | 2018-07-20 | 2020-01-23 | 동우화인켐 주식회사 | 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
KR102629575B1 (ko) * | 2018-07-20 | 2024-01-26 | 동우 화인켐 주식회사 | 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
WO2020040386A1 (ko) * | 2018-08-20 | 2020-02-27 | 동우화인켐 주식회사 | 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
KR102629576B1 (ko) * | 2018-08-20 | 2024-01-26 | 동우 화인켐 주식회사 | 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
KR102532774B1 (ko) * | 2018-08-20 | 2023-05-12 | 동우 화인켐 주식회사 | 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법 |
CN111048415B (zh) * | 2018-10-11 | 2023-03-14 | 上海新阳半导体材料股份有限公司 | 一种选择性刻蚀液组合物及其制备方法和应用 |
KR102557642B1 (ko) * | 2018-10-25 | 2023-07-20 | 에스케이이노베이션 주식회사 | 식각 조성물 첨가제, 그 제조방법 및 이를 포함하는 식각 조성물 |
KR102633743B1 (ko) * | 2018-10-26 | 2024-02-05 | 에스케이이노베이션 주식회사 | 식각액 조성물, 절연막의 식각방법 및 반도체 소자의 제조방법 |
KR102571430B1 (ko) * | 2018-10-31 | 2023-08-28 | 오씨아이 주식회사 | 실리콘 기판 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
KR102628802B1 (ko) * | 2018-11-15 | 2024-01-24 | 엔테그리스, 아이엔씨. | 질화규소 에칭 조성물 및 방법 |
KR102307189B1 (ko) * | 2018-12-11 | 2021-09-30 | 주식회사 케이씨텍 | 반도체용 고선택비 식각액 |
WO2020122454A1 (ko) * | 2018-12-11 | 2020-06-18 | 주식회사 케이씨텍 | 반도체용 고선택비 식각액, 실리콘 질화막 선택적 식각액 및 이를 이용한 반도체 소자의 제조 |
KR102278765B1 (ko) * | 2019-07-31 | 2021-07-20 | 주식회사 케이씨텍 | 실리콘 질화막 선택적 식각액 및 이를 이용한 반도체 소자의 제조 방법 |
KR102576574B1 (ko) * | 2018-12-27 | 2023-09-08 | 에스케이이노베이션 주식회사 | 식각 조성물, 이를 이용한 절연막의 식각방법 및 반도체 소자의 제조방법 |
KR102576576B1 (ko) * | 2018-12-27 | 2023-09-08 | 에스케이이노베이션 주식회사 | 식각 조성물, 이를 이용한 절연막의 식각방법 및 반도체 소자의 제조방법 |
KR102576575B1 (ko) * | 2018-12-27 | 2023-09-08 | 에스케이이노베이션 주식회사 | 식각 조성물, 이를 이용한 절연막의 식각방법 및 반도체 소자의 제조방법 |
KR20200086141A (ko) * | 2019-01-08 | 2020-07-16 | 삼성전자주식회사 | 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법 |
KR102584616B1 (ko) * | 2019-01-28 | 2023-10-05 | 오씨아이 주식회사 | 실리콘 기판 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
KR20200122521A (ko) * | 2019-04-18 | 2020-10-28 | 에스케이이노베이션 주식회사 | 신규한 규소 화합물 |
TWI756719B (zh) * | 2019-06-28 | 2022-03-01 | 日商斯庫林集團股份有限公司 | 基板處理液 |
TWI741635B (zh) | 2019-06-28 | 2021-10-01 | 日商斯庫林集團股份有限公司 | 基板處理方法及基板處理裝置 |
KR102675053B1 (ko) | 2019-08-05 | 2024-06-12 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
KR102345230B1 (ko) * | 2019-08-23 | 2021-12-30 | 주식회사 제우스이엔피 | 실리콘질화막 식각액 조성물 및 이의 제조방법 |
KR102675055B1 (ko) | 2019-09-18 | 2024-06-12 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
TWI752669B (zh) * | 2019-10-09 | 2022-01-11 | 美商恩特葛瑞斯股份有限公司 | 濕式蝕刻組合物及方法 |
KR20210062347A (ko) | 2019-11-21 | 2021-05-31 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
KR102335965B1 (ko) * | 2020-03-25 | 2021-12-07 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 |
KR102488503B1 (ko) | 2020-09-21 | 2023-01-13 | 재원산업 주식회사 | 질화막 식각용 조성물 및 이를 이용한 반도체 패턴 형성 방법 |
CN115011350A (zh) * | 2022-07-05 | 2022-09-06 | 上海集成电路材料研究院有限公司 | 一种蚀刻组合物、蚀刻方法及应用 |
CN115287069B (zh) * | 2022-07-06 | 2023-06-09 | 湖北兴福电子材料股份有限公司 | 一种抑制二氧化硅蚀刻的无c蚀刻液 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB989409A (en) | 1962-08-24 | 1965-04-14 | Gen Electric | Organopolysiloxane compositions |
US20040134873A1 (en) * | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
JP4443864B2 (ja) | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法 |
KR100558164B1 (ko) * | 2003-06-30 | 2006-03-10 | 삼성전자주식회사 | 질화물 제거용 식각액 및 이를 이용한 반도체 소자의질화막 제거방법 |
ES2293340T3 (es) | 2003-08-19 | 2008-03-16 | Mallinckrodt Baker, Inc. | Composiciones decapantes y de limpieza para microelectronica. |
JP2005256077A (ja) * | 2004-03-11 | 2005-09-22 | Tosoh Corp | エッチング液 |
JP3994992B2 (ja) * | 2004-08-13 | 2007-10-24 | 三菱瓦斯化学株式会社 | シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法 |
US7846989B2 (en) * | 2005-02-25 | 2010-12-07 | John A. Kanca | Dental gel etchants |
WO2006110279A1 (en) * | 2005-04-08 | 2006-10-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
JP2006319171A (ja) * | 2005-05-13 | 2006-11-24 | Tosoh Corp | エッチング用組成物 |
KR100831238B1 (ko) * | 2005-12-01 | 2008-05-22 | 주식회사 엘지화학 | 중굴절 및 고굴절 실록산계 피복 조성물, 이의 제조방법,및 이로부터 제조되는 광학 렌즈 |
KR20080079999A (ko) * | 2007-02-28 | 2008-09-02 | 토소가부시키가이샤 | 에칭 방법 및 그것에 이용되는 에칭용 조성물 |
EP2197972B1 (en) * | 2007-09-21 | 2020-04-01 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
KR101426089B1 (ko) | 2008-02-11 | 2014-08-04 | 동우 화인켐 주식회사 | 세정액 조성물 및 이를 이용한 세정 방법 |
JP5406556B2 (ja) * | 2009-02-23 | 2014-02-05 | 関東化学株式会社 | 金属積層膜用エッチング液組成物 |
KR101097275B1 (ko) * | 2009-10-07 | 2011-12-22 | 솔브레인 주식회사 | 실리콘질화막에 대한 고선택비 식각용 조성물 |
KR101097277B1 (ko) * | 2009-10-07 | 2011-12-22 | 솔브레인 주식회사 | 습식 식각용 조성물 |
KR20130025612A (ko) * | 2011-09-02 | 2013-03-12 | 동우 화인켐 주식회사 | 갈륨 함유 금속 산화물막의 식각액 조성물 |
US9368647B2 (en) | 2011-10-18 | 2016-06-14 | Samsung Electronics Co., Ltd. | Compositions for etching |
KR101782329B1 (ko) | 2011-10-18 | 2017-09-28 | 삼성전자주식회사 | 식각용 조성물 및 이를 이용하는 반도체 기억 소자의 형성 방법 |
KR102365046B1 (ko) * | 2012-12-18 | 2022-02-21 | 솔브레인 주식회사 | 식각 조성물, 식각 방법 및 반도체 소자 |
JP6110814B2 (ja) * | 2013-06-04 | 2017-04-05 | 富士フイルム株式会社 | エッチング液およびそのキット、これらを用いたエッチング方法、半導体基板製品の製造方法および半導体素子の製造方法 |
KR102256930B1 (ko) | 2013-10-18 | 2021-05-28 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 금속 패턴 제조방법 |
KR102161019B1 (ko) | 2013-10-31 | 2020-09-29 | 솔브레인 주식회사 | 질화티타늄막 및 텅스텐막의 적층체용 식각 조성물, 이를 이용한 식각 방법 및 이로부터 제조된 반도체 소자 |
KR20150107354A (ko) | 2014-03-14 | 2015-09-23 | 동우 화인켐 주식회사 | 아인산을 포함하는 금속막용 식각액 조성물 |
CN104119767A (zh) * | 2014-06-25 | 2014-10-29 | 蚌埠凯盛工程技术有限公司 | 一种抗黄变阻燃粉末涂料 |
KR101539373B1 (ko) * | 2014-07-17 | 2015-07-27 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
KR101539374B1 (ko) * | 2014-07-17 | 2015-07-27 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
US9868902B2 (en) | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
KR101539375B1 (ko) | 2014-07-17 | 2015-07-27 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
JP6494349B2 (ja) | 2015-03-18 | 2019-04-03 | 株式会社Adeka | エッチング液組成物及びエッチング方法 |
-
2015
- 2015-12-15 KR KR1020150178774A patent/KR102545800B1/ko active IP Right Grant
- 2015-12-15 KR KR1020150178778A patent/KR102545804B1/ko active IP Right Grant
- 2015-12-15 KR KR1020150178776A patent/KR102545802B1/ko active IP Right Grant
- 2015-12-15 KR KR1020150178775A patent/KR102545801B1/ko active IP Right Grant
- 2015-12-15 KR KR1020150178772A patent/KR102545799B1/ko active IP Right Grant
- 2015-12-15 KR KR1020150178777A patent/KR102545803B1/ko active IP Right Grant
-
2016
- 2016-10-28 SG SG10202005212QA patent/SG10202005212QA/en unknown
- 2016-10-28 US US15/781,471 patent/US11149200B2/en active Active
- 2016-10-28 JP JP2018528949A patent/JP6867390B2/ja active Active
- 2016-10-28 SG SG11201804639QA patent/SG11201804639QA/en unknown
- 2016-10-28 EP EP16870918.6A patent/EP3385353B1/en active Active
- 2016-10-28 PL PL16870918.6T patent/PL3385353T3/pl unknown
- 2016-10-28 CN CN201680071078.XA patent/CN108291132B/zh active Active
- 2016-12-02 TW TW105140018A patent/TWI767894B/zh active
-
2020
- 2020-11-10 US US17/093,662 patent/US11390807B2/en active Active
- 2020-11-10 US US17/093,656 patent/US11479720B2/en active Active
- 2020-11-10 US US17/093,652 patent/US11390806B2/en active Active
- 2020-11-10 US US17/093,650 patent/US11421156B2/en active Active
- 2020-11-10 US US17/093,658 patent/US11566178B2/en active Active
- 2020-11-10 US US17/093,654 patent/US11530355B2/en active Active
-
2022
- 2022-12-26 US US18/088,769 patent/US20230141924A1/en active Pending
- 2022-12-26 US US18/088,765 patent/US20230136538A1/en active Pending
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6867390B2 (ja) | エッチング用組成物及びそれを用いた半導体素子の製造方法 | |
JP7274025B2 (ja) | エッチング用組成物およびこれを用いた半導体素子の製造方法 | |
KR101627181B1 (ko) | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 | |
JP6580397B2 (ja) | エッチング用組成物及びこれを用いた半導体素子の製造方法 | |
KR101539375B1 (ko) | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 | |
KR101539373B1 (ko) | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 | |
KR102689081B1 (ko) | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 | |
KR102599378B1 (ko) | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 | |
KR20180074951A (ko) | 식각용 조성물, 이의 제조 방법 및 이를 이용한 반도체 소자의 제조방법 | |
KR20180075417A (ko) | 식각용 조성물, 이의 제조 방법 및 이를 이용한 반도체 소자의 제조방법 | |
KR20230149801A (ko) | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180702 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191001 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20200121 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201127 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201208 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20210128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210222 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210406 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210408 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6867390 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |