JP2009099900A5 - - Google Patents
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- Publication number
- JP2009099900A5 JP2009099900A5 JP2007272297A JP2007272297A JP2009099900A5 JP 2009099900 A5 JP2009099900 A5 JP 2009099900A5 JP 2007272297 A JP2007272297 A JP 2007272297A JP 2007272297 A JP2007272297 A JP 2007272297A JP 2009099900 A5 JP2009099900 A5 JP 2009099900A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- layer
- insulating film
- glass
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 28
- 239000000758 substrate Substances 0.000 claims 28
- 239000004065 semiconductor Substances 0.000 claims 23
- 239000011521 glass Substances 0.000 claims 20
- 239000013078 crystal Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 5
- 229910052796 boron Inorganic materials 0.000 claims 5
- 150000002500 ions Chemical class 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims 3
- -1 hydrogen ions Chemical class 0.000 claims 3
- 150000001282 organosilanes Chemical class 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000002356 single layer Substances 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007272297A JP5275608B2 (ja) | 2007-10-19 | 2007-10-19 | 半導体基板の作製方法 |
| US12/249,437 US7994022B2 (en) | 2007-10-19 | 2008-10-10 | Semiconductor substrate and semiconductor device and manufacturing method of the same |
| US13/168,155 US8227866B2 (en) | 2007-10-19 | 2011-06-24 | Semiconductor substrate and semiconductor device and manufacturing method of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007272297A JP5275608B2 (ja) | 2007-10-19 | 2007-10-19 | 半導体基板の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009099900A JP2009099900A (ja) | 2009-05-07 |
| JP2009099900A5 true JP2009099900A5 (enExample) | 2010-09-09 |
| JP5275608B2 JP5275608B2 (ja) | 2013-08-28 |
Family
ID=40562626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007272297A Expired - Fee Related JP5275608B2 (ja) | 2007-10-19 | 2007-10-19 | 半導体基板の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US7994022B2 (enExample) |
| JP (1) | JP5275608B2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090186237A1 (en) * | 2008-01-18 | 2009-07-23 | Rolls-Royce Corp. | CMAS-Resistant Thermal Barrier Coatings |
| US7820527B2 (en) * | 2008-02-20 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Cleave initiation using varying ion implant dose |
| KR100989125B1 (ko) * | 2008-07-16 | 2010-10-20 | 삼성모바일디스플레이주식회사 | 원장기판 절단 장치 및 이에 의하여 절단된 유기발광표시장치 |
| US10717678B2 (en) * | 2008-09-30 | 2020-07-21 | Rolls-Royce Corporation | Coating including a rare earth silicate-based layer including a second phase |
| US8470460B2 (en) * | 2008-11-25 | 2013-06-25 | Rolls-Royce Corporation | Multilayer thermal barrier coatings |
| CN101762922B (zh) * | 2008-12-24 | 2012-05-30 | 京东方科技集团股份有限公司 | 触摸式电子纸及其制造方法 |
| US20110033630A1 (en) * | 2009-08-05 | 2011-02-10 | Rolls-Royce Corporation | Techniques for depositing coating on ceramic substrate |
| US9194242B2 (en) | 2010-07-23 | 2015-11-24 | Rolls-Royce Corporation | Thermal barrier coatings including CMAS-resistant thermal barrier coating layers |
| US20140261080A1 (en) | 2010-08-27 | 2014-09-18 | Rolls-Royce Corporation | Rare earth silicate environmental barrier coatings |
| JP5729097B2 (ja) * | 2011-04-07 | 2015-06-03 | Jsr株式会社 | 基材の処理方法、仮固定材および電子部品 |
| KR20120129592A (ko) * | 2011-05-20 | 2012-11-28 | 삼성디스플레이 주식회사 | 평판 표시 장치용 백플레인, 이를 포함하는 평판 표시 장치, 및 그 제조 방법 |
| FR2985370A1 (fr) * | 2011-12-29 | 2013-07-05 | Commissariat Energie Atomique | Procede de fabrication d'une structure multicouche sur un support |
| CN102701569B (zh) * | 2012-01-12 | 2015-01-07 | 上海华力微电子有限公司 | 改善高密度等离子体化学气相淀积的磷硅玻璃形貌的方法 |
| US9390942B2 (en) * | 2012-11-30 | 2016-07-12 | Peregrine Semiconductor Corporation | Method, system, and apparatus for preparing substrates and bonding semiconductor layers to substrates |
| CN105144364B (zh) * | 2013-04-25 | 2018-01-09 | 夏普株式会社 | 半导体装置和半导体装置的制造方法 |
| KR20140140416A (ko) * | 2013-05-29 | 2014-12-09 | 삼성디스플레이 주식회사 | 유기발광 디스플레이 장치 제조방법 및 이에 따라 제조된 유기발광 디스플레이 장치 |
| CN103345390A (zh) * | 2013-06-17 | 2013-10-09 | 北京金山安全软件有限公司 | 用于移动终端的图片输出方法、装置和移动终端 |
| US10329205B2 (en) | 2014-11-24 | 2019-06-25 | Rolls-Royce Corporation | Bond layer for silicon-containing substrates |
| KR101986924B1 (ko) * | 2014-12-18 | 2019-06-07 | 엔테그리스, 아이엔씨. | 충격 상태 보호부를 갖는 웨이퍼 용기 |
| EP3427293B1 (en) * | 2016-03-07 | 2021-05-05 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof |
| US20190017177A1 (en) | 2017-07-17 | 2019-01-17 | Rolls-Royce Corporation | Thermal barrier coatings for components in high-temperature mechanical systems |
| US11655543B2 (en) | 2017-08-08 | 2023-05-23 | Rolls-Royce Corporation | CMAS-resistant barrier coatings |
| US10851656B2 (en) | 2017-09-27 | 2020-12-01 | Rolls-Royce Corporation | Multilayer environmental barrier coating |
| US11251406B2 (en) | 2019-03-07 | 2022-02-15 | Vitro Flat Glass Llc | Borosilicate light extraction region |
| CN110299427A (zh) * | 2019-05-06 | 2019-10-01 | 上海空间电源研究所 | 一种空间用刚性太阳电池弯曲度调控方法 |
| CN119008364B (zh) * | 2024-07-05 | 2025-09-23 | 上海集成电路材料研究院有限公司 | 一种电子源结构及制作方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3237888B2 (ja) * | 1992-01-31 | 2001-12-10 | キヤノン株式会社 | 半導体基体及びその作製方法 |
| JPH08255762A (ja) * | 1995-03-17 | 1996-10-01 | Nec Corp | 半導体デバイスの製造方法 |
| US6599574B1 (en) * | 1996-04-04 | 2003-07-29 | Applied Materials Inc. | Method and apparatus for forming a dielectric film using helium as a carrier gas |
| US7470598B2 (en) * | 2004-06-21 | 2008-12-30 | Sang-Yun Lee | Semiconductor layer structure and method of making the same |
| JPH11163363A (ja) | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US6433841B1 (en) | 1997-12-19 | 2002-08-13 | Seiko Epson Corporation | Electro-optical apparatus having faces holding electro-optical material in between flattened by using concave recess, manufacturing method thereof, and electronic device using same |
| JP2000077287A (ja) * | 1998-08-26 | 2000-03-14 | Nissin Electric Co Ltd | 結晶薄膜基板の製造方法 |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| US6850292B1 (en) | 1998-12-28 | 2005-02-01 | Seiko Epson Corporation | Electric-optic device, method of fabricating the same, and electronic apparatus |
| JP3636641B2 (ja) | 1999-08-20 | 2005-04-06 | セイコーエプソン株式会社 | 電気光学装置 |
| JP3864678B2 (ja) | 2000-07-28 | 2007-01-10 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
| US7018909B2 (en) * | 2003-02-28 | 2006-03-28 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Forming structures that include a relaxed or pseudo-relaxed layer on a substrate |
| JP4319078B2 (ja) * | 2004-03-26 | 2009-08-26 | シャープ株式会社 | 半導体装置の製造方法 |
| EP1993128A3 (en) * | 2007-05-17 | 2010-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate |
| US9059247B2 (en) * | 2007-05-18 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate and method for manufacturing semiconductor device |
| US7781306B2 (en) * | 2007-06-20 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor substrate and method for manufacturing the same |
-
2007
- 2007-10-19 JP JP2007272297A patent/JP5275608B2/ja not_active Expired - Fee Related
-
2008
- 2008-10-10 US US12/249,437 patent/US7994022B2/en not_active Expired - Fee Related
-
2011
- 2011-06-24 US US13/168,155 patent/US8227866B2/en not_active Expired - Fee Related
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