JP2008270766A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008270766A5 JP2008270766A5 JP2008068736A JP2008068736A JP2008270766A5 JP 2008270766 A5 JP2008270766 A5 JP 2008270766A5 JP 2008068736 A JP2008068736 A JP 2008068736A JP 2008068736 A JP2008068736 A JP 2008068736A JP 2008270766 A5 JP2008270766 A5 JP 2008270766A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- silicon nitride
- semiconductor
- nitride film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 85
- 229910052581 Si3N4 Inorganic materials 0.000 claims 43
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 43
- 239000000758 substrate Substances 0.000 claims 23
- 239000007789 gas Substances 0.000 claims 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 16
- 238000004519 manufacturing process Methods 0.000 claims 16
- 230000015572 biosynthetic process Effects 0.000 claims 14
- 238000000034 method Methods 0.000 claims 13
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 6
- 239000012212 insulator Substances 0.000 claims 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 4
- 229910021529 ammonia Inorganic materials 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 4
- 229910052732 germanium Inorganic materials 0.000 claims 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 4
- 229910052736 halogen Inorganic materials 0.000 claims 3
- 125000005843 halogen group Chemical group 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 239000010453 quartz Substances 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims 1
- 239000002985 plastic film Substances 0.000 claims 1
- 229920006255 plastic film Polymers 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008068736A JP5311851B2 (ja) | 2007-03-23 | 2008-03-18 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007077930 | 2007-03-23 | ||
| JP2007077930 | 2007-03-23 | ||
| JP2008068736A JP5311851B2 (ja) | 2007-03-23 | 2008-03-18 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013138649A Division JP2013225691A (ja) | 2007-03-23 | 2013-07-02 | 半導体装置、及び、半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008270766A JP2008270766A (ja) | 2008-11-06 |
| JP2008270766A5 true JP2008270766A5 (enExample) | 2011-04-14 |
| JP5311851B2 JP5311851B2 (ja) | 2013-10-09 |
Family
ID=39773814
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008068736A Expired - Fee Related JP5311851B2 (ja) | 2007-03-23 | 2008-03-18 | 半導体装置 |
| JP2013138649A Withdrawn JP2013225691A (ja) | 2007-03-23 | 2013-07-02 | 半導体装置、及び、半導体装置の作製方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013138649A Withdrawn JP2013225691A (ja) | 2007-03-23 | 2013-07-02 | 半導体装置、及び、半導体装置の作製方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7851296B2 (enExample) |
| JP (2) | JP5311851B2 (enExample) |
| KR (2) | KR101402102B1 (enExample) |
| CN (2) | CN102522430B (enExample) |
| TW (1) | TWI485859B (enExample) |
| WO (1) | WO2008123264A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5408930B2 (ja) * | 2007-08-31 | 2014-02-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5224889B2 (ja) * | 2008-04-17 | 2013-07-03 | 株式会社東芝 | 半導体装置及びその製造方法 |
| WO2011102190A1 (en) * | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Demodulation circuit and rfid tag including the demodulation circuit |
| JP5121869B2 (ja) | 2010-03-23 | 2013-01-16 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
| US8441010B2 (en) * | 2010-07-01 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US20120001179A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8263458B2 (en) | 2010-12-20 | 2012-09-11 | Spansion Llc | Process margin engineering in charge trapping field effect transistors |
| US8441063B2 (en) * | 2010-12-30 | 2013-05-14 | Spansion Llc | Memory with extended charge trapping layer |
| KR101832361B1 (ko) * | 2011-01-19 | 2018-04-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| KR101244768B1 (ko) * | 2011-05-04 | 2013-03-19 | 한국과학기술원 | 그래핀 게이트 전극을 이용한 비휘발성 메모리 소자 |
| KR101975929B1 (ko) * | 2012-06-29 | 2019-05-09 | 삼성전자주식회사 | 질산화물 채널층을 구비한 트랜지스터 및 그 제조방법 |
| US8778758B2 (en) * | 2012-08-30 | 2014-07-15 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device and semiconductor device |
| KR20140032253A (ko) * | 2012-09-06 | 2014-03-14 | 한국전자통신연구원 | 터치 스크린 및 그의 제조방법 |
| CN103839891A (zh) * | 2012-11-26 | 2014-06-04 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
| CN104218090B (zh) * | 2013-05-31 | 2017-01-04 | 上海和辉光电有限公司 | 薄膜晶体管及其制造方法和具有该薄膜晶体管的显示装置 |
| US20150008428A1 (en) | 2013-07-08 | 2015-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US9312349B2 (en) | 2013-07-08 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US9666697B2 (en) | 2013-07-08 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device including an electron trap layer |
| US9449853B2 (en) | 2013-09-04 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising electron trap layer |
| US9269822B2 (en) | 2013-09-12 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN104637992B (zh) * | 2013-11-13 | 2019-08-23 | 上海和辉光电有限公司 | 具有改善的蚀刻角度的栅极绝缘层及其形成方法 |
| JP2015122343A (ja) * | 2013-12-20 | 2015-07-02 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法および不揮発性半導体記憶装置 |
| US11037851B2 (en) * | 2019-08-30 | 2021-06-15 | Applied Materials, Inc. | Nitrogen-rich silicon nitride films for thin film transistors |
| US11121223B2 (en) * | 2019-11-15 | 2021-09-14 | Micron Technology, Inc. | Control gate structures for field-effect transistors |
| US11495613B2 (en) * | 2020-08-04 | 2022-11-08 | Sandisk Technologies Llc | Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same |
| US11538828B2 (en) | 2020-08-04 | 2022-12-27 | Sandisk Technologies Llc | Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same |
| US11605536B2 (en) | 2020-09-19 | 2023-03-14 | Tokyo Electron Limited | Cyclic low temperature film growth processes |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5924547B2 (ja) | 1976-11-04 | 1984-06-09 | ソニー株式会社 | 不揮発性メモリトランジスタ |
| JPS5924547A (ja) * | 1982-08-02 | 1984-02-08 | Hitachi Ltd | 筒状部品の外径形状加工方法 |
| JPS6060770A (ja) | 1983-09-14 | 1985-04-08 | Matsushita Electronics Corp | 半導体記憶装置 |
| JP2506726B2 (ja) | 1987-02-23 | 1996-06-12 | 松下電子工業株式会社 | 不揮発性記憶装置の製造方法 |
| JP2551595B2 (ja) * | 1987-07-31 | 1996-11-06 | 工業技術院長 | 半導体不揮発性メモリ素子 |
| JPH0259632A (ja) * | 1988-08-25 | 1990-02-28 | Shinko Electric Co Ltd | トルク測定装置 |
| JP2863198B2 (ja) * | 1989-06-07 | 1999-03-03 | 株式会社日立製作所 | 半導体集積回路装置の製造方法およびそれによって得られる半導体集積回路装置 |
| JPH03226068A (ja) | 1990-01-30 | 1991-10-07 | Ricoh Co Ltd | イメージセンサ |
| JPH06314785A (ja) | 1993-03-05 | 1994-11-08 | Semiconductor Energy Lab Co Ltd | 薄膜半導体装置およびその作製方法 |
| JPH07176753A (ja) | 1993-12-17 | 1995-07-14 | Semiconductor Energy Lab Co Ltd | 薄膜半導体装置およびその作製方法 |
| JP3452981B2 (ja) | 1994-04-29 | 2003-10-06 | 株式会社半導体エネルギー研究所 | 半導体集積回路およびその作製方法 |
| US6433361B1 (en) * | 1994-04-29 | 2002-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit and method for forming the same |
| JP3305901B2 (ja) * | 1994-12-14 | 2002-07-24 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2006013534A (ja) | 1997-07-08 | 2006-01-12 | Sony Corp | 半導体不揮発性記憶装置の製造方法 |
| US6191463B1 (en) * | 1997-07-15 | 2001-02-20 | Kabushiki Kaisha Toshiba | Apparatus and method of improving an insulating film on a semiconductor device |
| US6005270A (en) * | 1997-11-10 | 1999-12-21 | Sony Corporation | Semiconductor nonvolatile memory device and method of production of same |
| KR100297712B1 (ko) * | 1998-07-23 | 2001-08-07 | 윤종용 | 고집적화를위한불휘발성메모리및그제조방법 |
| JP4342621B2 (ja) * | 1998-12-09 | 2009-10-14 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP4923318B2 (ja) * | 1999-12-17 | 2012-04-25 | ソニー株式会社 | 不揮発性半導体記憶装置およびその動作方法 |
| JP4792620B2 (ja) * | 2000-06-21 | 2011-10-12 | ソニー株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
| JP4151229B2 (ja) | 2000-10-26 | 2008-09-17 | ソニー株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
| JP4617574B2 (ja) * | 2001-01-16 | 2011-01-26 | ソニー株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
| JP2002280465A (ja) * | 2001-03-19 | 2002-09-27 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
| JP4696383B2 (ja) * | 2001-03-28 | 2011-06-08 | ソニー株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JP3637332B2 (ja) | 2002-05-29 | 2005-04-13 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2004247581A (ja) * | 2003-02-14 | 2004-09-02 | Sony Corp | 不揮発性半導体記録装置およびその製造方法 |
| WO2004091997A1 (ja) * | 2003-04-18 | 2004-10-28 | Koyo Seiko Co. Ltd. | 電動パワーステアリング装置 |
| JP2004356562A (ja) * | 2003-05-30 | 2004-12-16 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
| EP1714294B1 (en) * | 2004-02-10 | 2016-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory |
| JP4951861B2 (ja) * | 2004-09-29 | 2012-06-13 | ソニー株式会社 | 不揮発性メモリデバイスおよびその製造方法 |
| KR100688575B1 (ko) * | 2004-10-08 | 2007-03-02 | 삼성전자주식회사 | 비휘발성 반도체 메모리 소자 |
| JP2005210139A (ja) * | 2005-03-07 | 2005-08-04 | Toshiba Corp | 不揮発性半導体記憶装置 |
| KR100672829B1 (ko) * | 2005-08-31 | 2007-01-22 | 삼성전자주식회사 | 전하 트랩 절연체의 제조 방법 및 소노스 타입의 비휘발성메모리 장치의 제조방법 |
| TWI429028B (zh) * | 2006-03-31 | 2014-03-01 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置及其製造方法 |
| US7786526B2 (en) * | 2006-03-31 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| TWI431726B (zh) * | 2006-06-01 | 2014-03-21 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置 |
| US8143661B2 (en) * | 2006-10-10 | 2012-03-27 | Spansion Llc | Memory cell system with charge trap |
-
2008
- 2008-03-18 KR KR1020097022054A patent/KR101402102B1/ko not_active Expired - Fee Related
- 2008-03-18 JP JP2008068736A patent/JP5311851B2/ja not_active Expired - Fee Related
- 2008-03-18 CN CN201210004802.0A patent/CN102522430B/zh not_active Expired - Fee Related
- 2008-03-18 WO PCT/JP2008/055619 patent/WO2008123264A1/en not_active Ceased
- 2008-03-18 KR KR1020137003615A patent/KR101402103B1/ko not_active Expired - Fee Related
- 2008-03-18 CN CN200880007858.3A patent/CN101647113B/zh not_active Expired - Fee Related
- 2008-03-19 US US12/076,522 patent/US7851296B2/en not_active Expired - Fee Related
- 2008-03-20 TW TW097109891A patent/TWI485859B/zh not_active IP Right Cessation
-
2010
- 2010-12-10 US US12/965,330 patent/US8350313B2/en not_active Expired - Fee Related
-
2013
- 2013-07-02 JP JP2013138649A patent/JP2013225691A/ja not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008270766A5 (enExample) | ||
| CN107112213B (zh) | 在低温下生长薄外延膜的方法 | |
| TWI808093B (zh) | 形成半導體結構之方法及相關半導體結構 | |
| JP5102393B2 (ja) | ケイ素含有フィルムの低温堆積 | |
| KR102648942B1 (ko) | 실리콘 함유 에피택셜층을 형성하기 위한 방법 및 관련 반도체 소자 구조체 | |
| US9984868B2 (en) | PEALD of films comprising silicon nitride | |
| US7365029B2 (en) | Method for silicon nitride chemical vapor deposition | |
| CN107430994B (zh) | 提高选择性外延生长的生长速率的方法 | |
| KR20080027859A (ko) | 광여기 증착 프로세스 동안 실리콘-함유 재료들을 형성하는방법 | |
| KR20080006019A (ko) | 실리콘계 유전층을 화학 기상 증착하기 위한 방법 | |
| KR100434698B1 (ko) | 반도체소자의 선택적 에피성장법 | |
| KR20140057193A (ko) | 인장 변형 적용들을 위한 고인장 실리콘 합금의 에피택시 | |
| JP2009076890A5 (enExample) | ||
| US20170110580A1 (en) | Coms structure and fabrication method thereof | |
| US20200283896A1 (en) | Methods for low temperature silicide formation | |
| KR20200062050A (ko) | 반도체막의 형성 방법 및 성막 장치 | |
| TW202240012A (zh) | 膜沉積系統及方法 | |
| US8158495B2 (en) | Process for forming a silicon-based single-crystal portion | |
| JP2006120992A (ja) | シリコン窒化膜の製造方法及びその製造装置 | |
| TWI878303B (zh) | 用於製造元件及結構的選擇性方法 | |
| KR20200055630A (ko) | 저온 결정질 실리콘 형성방법 | |
| TWI223332B (en) | Method of forming a polysilicon layer comprising microcrystalline grains | |
| KR20200073452A (ko) | 저온 실리콘 절연막 증착 방법 | |
| JP2010093148A (ja) | 半導体装置の製造方法 | |
| JPS60158672A (ja) | 半導体装置の製造方法 |