TWI485859B - 半導體裝置和其製造方法 - Google Patents

半導體裝置和其製造方法 Download PDF

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Publication number
TWI485859B
TWI485859B TW097109891A TW97109891A TWI485859B TW I485859 B TWI485859 B TW I485859B TW 097109891 A TW097109891 A TW 097109891A TW 97109891 A TW97109891 A TW 97109891A TW I485859 B TWI485859 B TW I485859B
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TW
Taiwan
Prior art keywords
tantalum nitride
film
nitride film
semiconductor
substrate
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TW097109891A
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English (en)
Chinese (zh)
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TW200849608A (en
Inventor
野田耕生
佐藤奈奈繪
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半導體能源研究所股份有限公司
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Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW200849608A publication Critical patent/TW200849608A/zh
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Publication of TWI485859B publication Critical patent/TWI485859B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/431—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
TW097109891A 2007-03-23 2008-03-20 半導體裝置和其製造方法 TWI485859B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007077930 2007-03-23

Publications (2)

Publication Number Publication Date
TW200849608A TW200849608A (en) 2008-12-16
TWI485859B true TWI485859B (zh) 2015-05-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW097109891A TWI485859B (zh) 2007-03-23 2008-03-20 半導體裝置和其製造方法

Country Status (6)

Country Link
US (2) US7851296B2 (enExample)
JP (2) JP5311851B2 (enExample)
KR (2) KR101402102B1 (enExample)
CN (2) CN102522430B (enExample)
TW (1) TWI485859B (enExample)
WO (1) WO2008123264A1 (enExample)

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JP5224889B2 (ja) * 2008-04-17 2013-07-03 株式会社東芝 半導体装置及びその製造方法
WO2011102190A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Demodulation circuit and rfid tag including the demodulation circuit
JP5121869B2 (ja) 2010-03-23 2013-01-16 株式会社東芝 不揮発性半導体記憶装置の製造方法
US8441010B2 (en) * 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20120001179A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8263458B2 (en) 2010-12-20 2012-09-11 Spansion Llc Process margin engineering in charge trapping field effect transistors
US8441063B2 (en) * 2010-12-30 2013-05-14 Spansion Llc Memory with extended charge trapping layer
KR101832361B1 (ko) * 2011-01-19 2018-04-16 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101244768B1 (ko) * 2011-05-04 2013-03-19 한국과학기술원 그래핀 게이트 전극을 이용한 비휘발성 메모리 소자
KR101975929B1 (ko) * 2012-06-29 2019-05-09 삼성전자주식회사 질산화물 채널층을 구비한 트랜지스터 및 그 제조방법
US8778758B2 (en) * 2012-08-30 2014-07-15 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device and semiconductor device
KR20140032253A (ko) * 2012-09-06 2014-03-14 한국전자통신연구원 터치 스크린 및 그의 제조방법
CN103839891A (zh) * 2012-11-26 2014-06-04 中国科学院微电子研究所 一种半导体结构及其制造方法
CN104218090B (zh) * 2013-05-31 2017-01-04 上海和辉光电有限公司 薄膜晶体管及其制造方法和具有该薄膜晶体管的显示装置
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9312349B2 (en) 2013-07-08 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9666697B2 (en) 2013-07-08 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device including an electron trap layer
US9449853B2 (en) 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
US9269822B2 (en) 2013-09-12 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN104637992B (zh) * 2013-11-13 2019-08-23 上海和辉光电有限公司 具有改善的蚀刻角度的栅极绝缘层及其形成方法
JP2015122343A (ja) * 2013-12-20 2015-07-02 株式会社東芝 不揮発性半導体記憶装置の製造方法および不揮発性半導体記憶装置
US11037851B2 (en) * 2019-08-30 2021-06-15 Applied Materials, Inc. Nitrogen-rich silicon nitride films for thin film transistors
US11121223B2 (en) * 2019-11-15 2021-09-14 Micron Technology, Inc. Control gate structures for field-effect transistors
US11495613B2 (en) * 2020-08-04 2022-11-08 Sandisk Technologies Llc Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same
US11538828B2 (en) 2020-08-04 2022-12-27 Sandisk Technologies Llc Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same
US11605536B2 (en) 2020-09-19 2023-03-14 Tokyo Electron Limited Cyclic low temperature film growth processes

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JP2001237330A (ja) * 1999-12-17 2001-08-31 Sony Corp 不揮発性半導体記憶装置およびその動作方法
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Also Published As

Publication number Publication date
US7851296B2 (en) 2010-12-14
CN102522430B (zh) 2014-10-22
KR101402103B1 (ko) 2014-06-02
JP2008270766A (ja) 2008-11-06
KR101402102B1 (ko) 2014-05-30
TW200849608A (en) 2008-12-16
US20080230831A1 (en) 2008-09-25
US20110079788A1 (en) 2011-04-07
KR20130023400A (ko) 2013-03-07
CN101647113A (zh) 2010-02-10
KR20090127172A (ko) 2009-12-09
WO2008123264A1 (en) 2008-10-16
JP5311851B2 (ja) 2013-10-09
JP2013225691A (ja) 2013-10-31
US8350313B2 (en) 2013-01-08
CN101647113B (zh) 2012-03-21
CN102522430A (zh) 2012-06-27

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