KR101402102B1 - 반도체장치의 제작 방법 - Google Patents

반도체장치의 제작 방법 Download PDF

Info

Publication number
KR101402102B1
KR101402102B1 KR1020097022054A KR20097022054A KR101402102B1 KR 101402102 B1 KR101402102 B1 KR 101402102B1 KR 1020097022054 A KR1020097022054 A KR 1020097022054A KR 20097022054 A KR20097022054 A KR 20097022054A KR 101402102 B1 KR101402102 B1 KR 101402102B1
Authority
KR
South Korea
Prior art keywords
film
silicon nitride
nitride film
semiconductor
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097022054A
Other languages
English (en)
Korean (ko)
Other versions
KR20090127172A (ko
Inventor
코세이 노다
나나에 사토
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20090127172A publication Critical patent/KR20090127172A/ko
Application granted granted Critical
Publication of KR101402102B1 publication Critical patent/KR101402102B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/431—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
KR1020097022054A 2007-03-23 2008-03-18 반도체장치의 제작 방법 Expired - Fee Related KR101402102B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2007-077930 2007-03-23
JP2007077930 2007-03-23
PCT/JP2008/055619 WO2008123264A1 (en) 2007-03-23 2008-03-18 Semiconductor device and manufacturing method thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137003615A Division KR101402103B1 (ko) 2007-03-23 2008-03-18 반도체장치

Publications (2)

Publication Number Publication Date
KR20090127172A KR20090127172A (ko) 2009-12-09
KR101402102B1 true KR101402102B1 (ko) 2014-05-30

Family

ID=39773814

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020097022054A Expired - Fee Related KR101402102B1 (ko) 2007-03-23 2008-03-18 반도체장치의 제작 방법
KR1020137003615A Expired - Fee Related KR101402103B1 (ko) 2007-03-23 2008-03-18 반도체장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137003615A Expired - Fee Related KR101402103B1 (ko) 2007-03-23 2008-03-18 반도체장치

Country Status (6)

Country Link
US (2) US7851296B2 (enExample)
JP (2) JP5311851B2 (enExample)
KR (2) KR101402102B1 (enExample)
CN (2) CN102522430B (enExample)
TW (1) TWI485859B (enExample)
WO (1) WO2008123264A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5408930B2 (ja) * 2007-08-31 2014-02-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5224889B2 (ja) * 2008-04-17 2013-07-03 株式会社東芝 半導体装置及びその製造方法
WO2011102190A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Demodulation circuit and rfid tag including the demodulation circuit
JP5121869B2 (ja) 2010-03-23 2013-01-16 株式会社東芝 不揮発性半導体記憶装置の製造方法
US8441010B2 (en) * 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20120001179A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8263458B2 (en) 2010-12-20 2012-09-11 Spansion Llc Process margin engineering in charge trapping field effect transistors
US8441063B2 (en) * 2010-12-30 2013-05-14 Spansion Llc Memory with extended charge trapping layer
KR101832361B1 (ko) * 2011-01-19 2018-04-16 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101244768B1 (ko) * 2011-05-04 2013-03-19 한국과학기술원 그래핀 게이트 전극을 이용한 비휘발성 메모리 소자
KR101975929B1 (ko) * 2012-06-29 2019-05-09 삼성전자주식회사 질산화물 채널층을 구비한 트랜지스터 및 그 제조방법
US8778758B2 (en) * 2012-08-30 2014-07-15 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device and semiconductor device
KR20140032253A (ko) * 2012-09-06 2014-03-14 한국전자통신연구원 터치 스크린 및 그의 제조방법
CN103839891A (zh) * 2012-11-26 2014-06-04 中国科学院微电子研究所 一种半导体结构及其制造方法
CN104218090B (zh) * 2013-05-31 2017-01-04 上海和辉光电有限公司 薄膜晶体管及其制造方法和具有该薄膜晶体管的显示装置
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9312349B2 (en) 2013-07-08 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9666697B2 (en) 2013-07-08 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device including an electron trap layer
US9449853B2 (en) 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
US9269822B2 (en) 2013-09-12 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN104637992B (zh) * 2013-11-13 2019-08-23 上海和辉光电有限公司 具有改善的蚀刻角度的栅极绝缘层及其形成方法
JP2015122343A (ja) * 2013-12-20 2015-07-02 株式会社東芝 不揮発性半導体記憶装置の製造方法および不揮発性半導体記憶装置
US11037851B2 (en) * 2019-08-30 2021-06-15 Applied Materials, Inc. Nitrogen-rich silicon nitride films for thin film transistors
US11121223B2 (en) * 2019-11-15 2021-09-14 Micron Technology, Inc. Control gate structures for field-effect transistors
US11495613B2 (en) * 2020-08-04 2022-11-08 Sandisk Technologies Llc Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same
US11538828B2 (en) 2020-08-04 2022-12-27 Sandisk Technologies Llc Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same
US11605536B2 (en) 2020-09-19 2023-03-14 Tokyo Electron Limited Cyclic low temperature film growth processes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990014006A (ko) * 1997-07-15 1999-02-25 니시무로 다이조 반도체장치 및 그 제조방법
US20030222318A1 (en) 2002-05-29 2003-12-04 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2004247581A (ja) * 2003-02-14 2004-09-02 Sony Corp 不揮発性半導体記録装置およびその製造方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924547B2 (ja) 1976-11-04 1984-06-09 ソニー株式会社 不揮発性メモリトランジスタ
JPS5924547A (ja) * 1982-08-02 1984-02-08 Hitachi Ltd 筒状部品の外径形状加工方法
JPS6060770A (ja) 1983-09-14 1985-04-08 Matsushita Electronics Corp 半導体記憶装置
JP2506726B2 (ja) 1987-02-23 1996-06-12 松下電子工業株式会社 不揮発性記憶装置の製造方法
JP2551595B2 (ja) * 1987-07-31 1996-11-06 工業技術院長 半導体不揮発性メモリ素子
JPH0259632A (ja) * 1988-08-25 1990-02-28 Shinko Electric Co Ltd トルク測定装置
JP2863198B2 (ja) * 1989-06-07 1999-03-03 株式会社日立製作所 半導体集積回路装置の製造方法およびそれによって得られる半導体集積回路装置
JPH03226068A (ja) 1990-01-30 1991-10-07 Ricoh Co Ltd イメージセンサ
JPH06314785A (ja) 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JPH07176753A (ja) 1993-12-17 1995-07-14 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JP3452981B2 (ja) 1994-04-29 2003-10-06 株式会社半導体エネルギー研究所 半導体集積回路およびその作製方法
US6433361B1 (en) * 1994-04-29 2002-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit and method for forming the same
JP3305901B2 (ja) * 1994-12-14 2002-07-24 東芝マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP2006013534A (ja) 1997-07-08 2006-01-12 Sony Corp 半導体不揮発性記憶装置の製造方法
US6005270A (en) * 1997-11-10 1999-12-21 Sony Corporation Semiconductor nonvolatile memory device and method of production of same
KR100297712B1 (ko) * 1998-07-23 2001-08-07 윤종용 고집적화를위한불휘발성메모리및그제조방법
JP4342621B2 (ja) * 1998-12-09 2009-10-14 株式会社東芝 不揮発性半導体記憶装置
JP4923318B2 (ja) * 1999-12-17 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置およびその動作方法
JP4792620B2 (ja) * 2000-06-21 2011-10-12 ソニー株式会社 不揮発性半導体記憶装置およびその製造方法
JP4151229B2 (ja) 2000-10-26 2008-09-17 ソニー株式会社 不揮発性半導体記憶装置およびその製造方法
JP4617574B2 (ja) * 2001-01-16 2011-01-26 ソニー株式会社 不揮発性半導体記憶装置およびその製造方法
JP2002280465A (ja) * 2001-03-19 2002-09-27 Sony Corp 不揮発性半導体記憶装置およびその製造方法
JP4696383B2 (ja) * 2001-03-28 2011-06-08 ソニー株式会社 不揮発性半導体記憶装置の製造方法
WO2004091997A1 (ja) * 2003-04-18 2004-10-28 Koyo Seiko Co. Ltd. 電動パワーステアリング装置
JP2004356562A (ja) * 2003-05-30 2004-12-16 Renesas Technology Corp 半導体装置の製造方法および半導体装置
EP1714294B1 (en) * 2004-02-10 2016-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory
JP4951861B2 (ja) * 2004-09-29 2012-06-13 ソニー株式会社 不揮発性メモリデバイスおよびその製造方法
KR100688575B1 (ko) * 2004-10-08 2007-03-02 삼성전자주식회사 비휘발성 반도체 메모리 소자
JP2005210139A (ja) * 2005-03-07 2005-08-04 Toshiba Corp 不揮発性半導体記憶装置
KR100672829B1 (ko) * 2005-08-31 2007-01-22 삼성전자주식회사 전하 트랩 절연체의 제조 방법 및 소노스 타입의 비휘발성메모리 장치의 제조방법
TWI429028B (zh) * 2006-03-31 2014-03-01 Semiconductor Energy Lab 非揮發性半導體記憶體裝置及其製造方法
US7786526B2 (en) * 2006-03-31 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
TWI431726B (zh) * 2006-06-01 2014-03-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
US8143661B2 (en) * 2006-10-10 2012-03-27 Spansion Llc Memory cell system with charge trap

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990014006A (ko) * 1997-07-15 1999-02-25 니시무로 다이조 반도체장치 및 그 제조방법
US20030222318A1 (en) 2002-05-29 2003-12-04 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2003347543A (ja) 2002-05-29 2003-12-05 Toshiba Corp 半導体装置及びその製造方法
JP2004247581A (ja) * 2003-02-14 2004-09-02 Sony Corp 不揮発性半導体記録装置およびその製造方法

Also Published As

Publication number Publication date
US7851296B2 (en) 2010-12-14
CN102522430B (zh) 2014-10-22
KR101402103B1 (ko) 2014-06-02
JP2008270766A (ja) 2008-11-06
TW200849608A (en) 2008-12-16
US20080230831A1 (en) 2008-09-25
US20110079788A1 (en) 2011-04-07
KR20130023400A (ko) 2013-03-07
CN101647113A (zh) 2010-02-10
KR20090127172A (ko) 2009-12-09
WO2008123264A1 (en) 2008-10-16
JP5311851B2 (ja) 2013-10-09
JP2013225691A (ja) 2013-10-31
US8350313B2 (en) 2013-01-08
CN101647113B (zh) 2012-03-21
CN102522430A (zh) 2012-06-27
TWI485859B (zh) 2015-05-21

Similar Documents

Publication Publication Date Title
KR101402102B1 (ko) 반도체장치의 제작 방법
JP5408930B2 (ja) 半導体装置の作製方法
US8022460B2 (en) Nonvolatile semiconductor memory device
KR101349879B1 (ko) 불휘발성 반도체 기억장치
KR101406766B1 (ko) 불휘발성 반도체 기억장치 및 그 제작방법
US8212302B2 (en) Nonvolatile semiconductor memory device
KR101488516B1 (ko) 불휘발성 반도체 기억장치
US8872251B2 (en) Nonvolatile semiconductor memory device and manufacturing method thereof
JP5466815B2 (ja) 半導体装置
JP5164406B2 (ja) 不揮発性半導体記憶装置
JP2007288175A (ja) 不揮発性半導体記憶装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A107 Divisional application of patent
A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20170504

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20180427

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20190429

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220527

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220527

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000