JP2009076890A5 - - Google Patents

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Publication number
JP2009076890A5
JP2009076890A5 JP2008214783A JP2008214783A JP2009076890A5 JP 2009076890 A5 JP2009076890 A5 JP 2009076890A5 JP 2008214783 A JP2008214783 A JP 2008214783A JP 2008214783 A JP2008214783 A JP 2008214783A JP 2009076890 A5 JP2009076890 A5 JP 2009076890A5
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JP
Japan
Prior art keywords
insulating layer
single crystal
crystal semiconductor
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008214783A
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English (en)
Japanese (ja)
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JP2009076890A (ja
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Publication date
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Priority to JP2008214783A priority Critical patent/JP2009076890A/ja
Priority claimed from JP2008214783A external-priority patent/JP2009076890A/ja
Publication of JP2009076890A publication Critical patent/JP2009076890A/ja
Publication of JP2009076890A5 publication Critical patent/JP2009076890A5/ja
Withdrawn legal-status Critical Current

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JP2008214783A 2007-08-31 2008-08-25 半導体装置の作製方法、半導体装置、及び電子機器 Withdrawn JP2009076890A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008214783A JP2009076890A (ja) 2007-08-31 2008-08-25 半導体装置の作製方法、半導体装置、及び電子機器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007227042 2007-08-31
JP2008214783A JP2009076890A (ja) 2007-08-31 2008-08-25 半導体装置の作製方法、半導体装置、及び電子機器

Publications (2)

Publication Number Publication Date
JP2009076890A JP2009076890A (ja) 2009-04-09
JP2009076890A5 true JP2009076890A5 (enExample) 2011-07-28

Family

ID=40406017

Family Applications (1)

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JP2008214783A Withdrawn JP2009076890A (ja) 2007-08-31 2008-08-25 半導体装置の作製方法、半導体装置、及び電子機器

Country Status (2)

Country Link
US (1) US8236630B2 (enExample)
JP (1) JP2009076890A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101056250B1 (ko) 2009-10-21 2011-08-11 삼성모바일디스플레이주식회사 평판 표시 장치 및 그의 제조 방법
KR101049003B1 (ko) 2009-12-01 2011-07-12 삼성모바일디스플레이주식회사 평판 표시 장치 및 그의 제조 방법
KR101101087B1 (ko) 2009-12-09 2011-12-30 삼성모바일디스플레이주식회사 표시 장치 및 그의 제조 방법
US8759118B2 (en) 2011-11-16 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Plating process and structure
US8536573B2 (en) * 2011-12-02 2013-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Plating process and structure

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2540037B2 (ja) * 1987-03-23 1996-10-02 日本電信電話株式会社 半導体装置の製造方法
JPH0254532A (ja) * 1988-08-17 1990-02-23 Sony Corp Ｓｏｉ基板の製造方法
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5818076A (en) * 1993-05-26 1998-10-06 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
JPH07183488A (ja) * 1993-12-24 1995-07-21 Nissan Motor Co Ltd Ｍｏｓ制御形サイリスタおよびその製造方法
JPH08255762A (ja) * 1995-03-17 1996-10-01 Nec Corp 半導体デバイスの製造方法
JP3080867B2 (ja) * 1995-09-25 2000-08-28 日本電気株式会社 Ｓｏｉ基板の製造方法
JP4103968B2 (ja) * 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US6388652B1 (en) * 1997-08-20 2002-05-14 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device
US6686623B2 (en) * 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法
JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3900741B2 (ja) * 1999-05-21 2007-04-04 信越半導体株式会社 Ｓｏｉウェーハの製造方法
JP4450126B2 (ja) * 2000-01-21 2010-04-14 日新電機株式会社 シリコン系結晶薄膜の形成方法
JP4507395B2 (ja) * 2000-11-30 2010-07-21 セイコーエプソン株式会社 電気光学装置用素子基板の製造方法
US7119365B2 (en) * 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
US6908797B2 (en) * 2002-07-09 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7508034B2 (en) * 2002-09-25 2009-03-24 Sharp Kabushiki Kaisha Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
JP2004134675A (ja) * 2002-10-11 2004-04-30 Sharp Corp Ｓｏｉ基板、表示装置およびｓｏｉ基板の製造方法
JP2004119943A (ja) * 2002-09-30 2004-04-15 Renesas Technology Corp 半導体ウェハおよびその製造方法
US7625808B2 (en) * 2003-09-01 2009-12-01 Sumco Corporation Method for manufacturing bonded wafer
JP2006229047A (ja) 2005-02-18 2006-08-31 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP5128064B2 (ja) * 2005-06-17 2013-01-23 国立大学法人東北大学 半導体装置
WO2007046290A1 (en) * 2005-10-18 2007-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2007173354A (ja) * 2005-12-20 2007-07-05 Shin Etsu Chem Co Ltd Ｓｏｉ基板およびｓｏｉ基板の製造方法

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