JP2013534547A5 - - Google Patents

Download PDF

Info

Publication number
JP2013534547A5
JP2013534547A5 JP2013513788A JP2013513788A JP2013534547A5 JP 2013534547 A5 JP2013534547 A5 JP 2013534547A5 JP 2013513788 A JP2013513788 A JP 2013513788A JP 2013513788 A JP2013513788 A JP 2013513788A JP 2013534547 A5 JP2013534547 A5 JP 2013534547A5
Authority
JP
Japan
Prior art keywords
silicon substrate
emitter
phosphorus
silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013513788A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013534547A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2011/052418 external-priority patent/WO2011154875A1/en
Publication of JP2013534547A publication Critical patent/JP2013534547A/ja
Publication of JP2013534547A5 publication Critical patent/JP2013534547A5/ja
Pending legal-status Critical Current

Links

JP2013513788A 2010-06-09 2011-06-01 水性アルカリ性エッチング及び洗浄組成物、及びシリコン基材の表面を処理するための方法 Pending JP2013534547A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35283110P 2010-06-09 2010-06-09
US61/352,831 2010-06-09
PCT/IB2011/052418 WO2011154875A1 (en) 2010-06-09 2011-06-01 Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates

Publications (2)

Publication Number Publication Date
JP2013534547A JP2013534547A (ja) 2013-09-05
JP2013534547A5 true JP2013534547A5 (enExample) 2014-07-10

Family

ID=45097599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013513788A Pending JP2013534547A (ja) 2010-06-09 2011-06-01 水性アルカリ性エッチング及び洗浄組成物、及びシリコン基材の表面を処理するための方法

Country Status (11)

Country Link
US (1) US9076920B2 (enExample)
EP (1) EP2580303B1 (enExample)
JP (1) JP2013534547A (enExample)
KR (1) KR101894603B1 (enExample)
CN (1) CN103038311B (enExample)
ES (1) ES2699223T3 (enExample)
MY (1) MY160091A (enExample)
PH (1) PH12012502385A1 (enExample)
SG (1) SG186108A1 (enExample)
TW (1) TWI498421B (enExample)
WO (1) WO2011154875A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
CN103717687B (zh) * 2011-08-09 2016-05-18 巴斯夫欧洲公司 处理硅基材表面的含水碱性组合物和方法
CN102751384A (zh) * 2012-07-07 2012-10-24 蚌埠玻璃工业设计研究院 一种晶体硅表面织构方法
WO2014024414A1 (ja) * 2012-08-10 2014-02-13 第一工業製薬株式会社 テクスチャー形成用エッチング液およびそれを用いたテクスチャー形成方法
KR102118964B1 (ko) * 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
US9416095B2 (en) 2013-07-16 2016-08-16 Akzo Nobel Chemicals International B.V. Salts, crystals, complexes, and derivatives of threonine diacetic acid, a process to prepare threonine diacetic acid, and the use thereof
WO2015033815A1 (ja) 2013-09-05 2015-03-12 株式会社Kit 水素製造装置、水素製造方法、水素製造用シリコン微細粒子、及び水素製造用シリコン微細粒子の製造方法
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP6373029B2 (ja) * 2014-03-27 2018-08-15 株式会社フジミインコーポレーテッド 研磨用組成物
DE102014206675A1 (de) * 2014-04-07 2015-10-08 Gebr. Schmid Gmbh Verfahren und Lösung zur Herstellung und Nachbehandlung von Wafern
JP6417612B2 (ja) * 2014-12-01 2018-11-07 メック株式会社 エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法
KR101765212B1 (ko) 2015-07-17 2017-08-04 주식회사 위즈켐 천연계 태양광 웨이퍼 세정제 조성물
KR102457249B1 (ko) * 2015-09-18 2022-10-21 주식회사 이엔에프테크놀로지 식각 조성물
CN105118898A (zh) * 2015-09-23 2015-12-02 中利腾晖光伏科技有限公司 一种硅片表面钝化方法及基于其的n型双面电池的制作方法
TWI675905B (zh) * 2015-11-14 2019-11-01 日商東京威力科創股份有限公司 使用稀釋的氫氧化四甲基銨處理微電子基板的方法
CN107164109A (zh) * 2017-03-31 2017-09-15 吴江创源新材料科技有限公司 一种蓝宝石晶片退火前清洗液及其制备方法和清洗工艺
KR102756186B1 (ko) 2020-02-05 2025-01-17 삼성전자주식회사 반도체 패키지 및 패키지-온-패키지의 제조 방법
CN112689886B (zh) * 2020-06-16 2022-11-18 福建晶安光电有限公司 一种衬底加工方法及半导体器件制造方法
CN119286525B (zh) * 2024-12-10 2025-06-24 嘉兴市小辰光伏科技有限公司 一种用于解决TOPCon电池LPCVD双插正面绕扩印的添加剂及清洗工艺

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50158281A (enExample) 1974-06-10 1975-12-22
GB1573206A (en) 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
FR2372904A1 (fr) 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
JPS6348830A (ja) 1986-08-19 1988-03-01 Toshiba Corp 半導体表面処理方法
JPS63274149A (ja) 1987-05-06 1988-11-11 Mitsubishi Gas Chem Co Inc 半導体処理剤
US5129955A (en) 1989-01-11 1992-07-14 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method
US5207866A (en) 1991-01-17 1993-05-04 Motorola, Inc. Anisotropic single crystal silicon etching solution and method
US5179414A (en) 1991-01-22 1993-01-12 Compag Computer Corporation Apparatus for developing an image on a photoconductive surface
TW263531B (enExample) 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
TW274630B (enExample) 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5466389A (en) 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5498293A (en) 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
ES2328309T3 (es) 1998-05-18 2009-11-11 Mallinckrodt Baker, Inc. Composiciones alcalinas que contienen silicato para limpiar sustratos microelectronicos.
US6417147B2 (en) 2000-02-29 2002-07-09 Showa Denko K.K. Cleaning agent composition, method for cleaning and use thereof
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP3893104B2 (ja) * 2002-12-20 2007-03-14 花王株式会社 銅配線半導体基板用ポリマー洗浄剤組成物
PL1664935T3 (pl) 2003-08-19 2008-01-31 Avantor Performance Mat Inc Kompozycje do usuwania powłok oraz czyszczenia dla mikroelektroniki
CN1546627A (zh) * 2003-12-16 2004-11-17 上海华虹(集团)有限公司 解决湿法剥离氮化硅薄膜新的清洗溶液
SG150509A1 (en) * 2004-03-01 2009-03-30 Mallinckrodt Baker Inc Nanoelectronic and microelectronic cleaning compositions
EP1866957A1 (en) * 2005-04-08 2007-12-19 Sachem, Inc. Selective wet etching of metal nitrides
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
WO2008061258A2 (en) * 2006-11-17 2008-05-22 Sachem, Inc. Selective metal wet etch composition and process
KR100964153B1 (ko) 2006-11-22 2010-06-17 엘지전자 주식회사 태양전지의 제조방법 및 그에 의해 제조되는 태양전지
KR101622862B1 (ko) 2007-05-17 2016-05-19 엔테그리스, 아이엔씨. Cmp후 세정 제제용 신규한 항산화제
CN100546627C (zh) * 2007-06-29 2009-10-07 王芬 一种外用祛除黄褐斑的中药面膜
WO2009044647A1 (ja) * 2007-10-04 2009-04-09 Mitsubishi Gas Chemical Company, Inc. シリコンエッチング液およびエッチング方法
US8809247B2 (en) 2008-02-15 2014-08-19 Lion Corporation Cleaning composition and method for cleaning substrate for electronic device
US8623231B2 (en) * 2008-06-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for etching an ultra thin film
US9228148B2 (en) 2008-12-04 2016-01-05 Voestalpine Stahl Gmbh Method for producing molded bodies from sheet steel galvanized on one or both sides
MY158452A (en) 2009-09-21 2016-10-14 Basf Se Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates

Similar Documents

Publication Publication Date Title
JP2011205089A5 (ja) 半導体膜の作製方法
CN103219228B (zh) 多晶硅层的制作方法和多晶硅薄膜晶体管及其制造方法
JP2011029637A5 (enExample)
JP2010034523A5 (enExample)
JP2014112668A5 (enExample)
JP2015067869A5 (enExample)
JP2015053445A5 (enExample)
JP2009111363A5 (enExample)
JP2011176095A5 (enExample)
JP2009135434A5 (enExample)
JP2008294417A5 (enExample)
JP2014208883A5 (enExample)
JP2014513868A5 (enExample)
JP2009158937A5 (enExample)
JP2009033123A5 (enExample)
EP2863259A3 (en) Method for manufacturing photomask blank
JP2012190048A5 (enExample)
TW201614719A (en) Semiconductor manufacturing method and semiconductor manufacturing apparatus
JP2010245334A5 (enExample)
JP2010109353A5 (enExample)
JP2012054540A5 (ja) Soi基板の作製方法
MX2013001008A (es) Metodo para producir un dispositivo de emision de luz.
JP2017174902A5 (enExample)
JP2013038404A5 (enExample)
JP2013543931A5 (enExample)