JP2013534547A5 - - Google Patents

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Publication number
JP2013534547A5
JP2013534547A5 JP2013513788A JP2013513788A JP2013534547A5 JP 2013534547 A5 JP2013534547 A5 JP 2013534547A5 JP 2013513788 A JP2013513788 A JP 2013513788A JP 2013513788 A JP2013513788 A JP 2013513788A JP 2013534547 A5 JP2013534547 A5 JP 2013534547A5
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JP
Japan
Prior art keywords
silicon substrate
emitter
phosphorus
silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013513788A
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English (en)
Japanese (ja)
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JP2013534547A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/IB2011/052418 external-priority patent/WO2011154875A1/en
Publication of JP2013534547A publication Critical patent/JP2013534547A/ja
Publication of JP2013534547A5 publication Critical patent/JP2013534547A5/ja
Pending legal-status Critical Current

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JP2013513788A 2010-06-09 2011-06-01 水性アルカリ性エッチング及び洗浄組成物、及びシリコン基材の表面を処理するための方法 Pending JP2013534547A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35283110P 2010-06-09 2010-06-09
US61/352,831 2010-06-09
PCT/IB2011/052418 WO2011154875A1 (en) 2010-06-09 2011-06-01 Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates

Publications (2)

Publication Number Publication Date
JP2013534547A JP2013534547A (ja) 2013-09-05
JP2013534547A5 true JP2013534547A5 (enExample) 2014-07-10

Family

ID=45097599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013513788A Pending JP2013534547A (ja) 2010-06-09 2011-06-01 水性アルカリ性エッチング及び洗浄組成物、及びシリコン基材の表面を処理するための方法

Country Status (11)

Country Link
US (1) US9076920B2 (enExample)
EP (1) EP2580303B1 (enExample)
JP (1) JP2013534547A (enExample)
KR (1) KR101894603B1 (enExample)
CN (1) CN103038311B (enExample)
ES (1) ES2699223T3 (enExample)
MY (1) MY160091A (enExample)
PH (1) PH12012502385A1 (enExample)
SG (1) SG186108A1 (enExample)
TW (1) TWI498421B (enExample)
WO (1) WO2011154875A1 (enExample)

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CN104584232B (zh) * 2012-08-10 2017-03-08 第一工业制药株式会社 纹理形成用蚀刻液及使用其的纹理形成方法
KR102118964B1 (ko) * 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
EP3022171B1 (en) * 2013-07-16 2017-07-05 Akzo Nobel Chemicals International B.V. New salts, crystals, complexes, and derivatives of threonine diacetic acid, a process to prepare threonine diacetic acid, and the use thereof
WO2015033815A1 (ja) 2013-09-05 2015-03-12 株式会社Ｋｉｔ 水素製造装置、水素製造方法、水素製造用シリコン微細粒子、及び水素製造用シリコン微細粒子の製造方法
JP6373029B2 (ja) * 2014-03-27 2018-08-15 株式会社フジミインコーポレーテッド 研磨用組成物
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
DE102014206675A1 (de) * 2014-04-07 2015-10-08 Gebr. Schmid Gmbh Verfahren und Lösung zur Herstellung und Nachbehandlung von Wafern
JP6417612B2 (ja) * 2014-12-01 2018-11-07 メック株式会社 エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法
KR101765212B1 (ko) 2015-07-17 2017-08-04 주식회사 위즈켐 천연계 태양광 웨이퍼 세정제 조성물
KR102457249B1 (ko) * 2015-09-18 2022-10-21 주식회사 이엔에프테크놀로지 식각 조성물
CN105118898A (zh) * 2015-09-23 2015-12-02 中利腾晖光伏科技有限公司 一种硅片表面钝化方法及基于其的n型双面电池的制作方法
WO2017083811A1 (en) * 2015-11-14 2017-05-18 Tokyo Electron Limited Method of treating a microelectronic substrate using dilute tmah
CN107164109A (zh) * 2017-03-31 2017-09-15 吴江创源新材料科技有限公司 一种蓝宝石晶片退火前清洗液及其制备方法和清洗工艺
KR102756186B1 (ko) 2020-02-05 2025-01-17 삼성전자주식회사 반도체 패키지 및 패키지-온-패키지의 제조 방법
CN112689886B (zh) * 2020-06-16 2022-11-18 福建晶安光电有限公司 一种衬底加工方法及半导体器件制造方法
CN119286525B (zh) * 2024-12-10 2025-06-24 嘉兴市小辰光伏科技有限公司 一种用于解决TOPCon电池LPCVD双插正面绕扩印的添加剂及清洗工艺

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