MY160091A - Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates - Google Patents
Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substratesInfo
- Publication number
- MY160091A MY160091A MYPI2012005135A MYPI2012005135A MY160091A MY 160091 A MY160091 A MY 160091A MY PI2012005135 A MYPI2012005135 A MY PI2012005135A MY PI2012005135 A MYPI2012005135 A MY PI2012005135A MY 160091 A MY160091 A MY 160091A
- Authority
- MY
- Malaysia
- Prior art keywords
- treating
- silicon substrates
- nxn
- cleaning composition
- aqueous alkaline
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H10P50/00—
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Detergent Compositions (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35283110P | 2010-06-09 | 2010-06-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY160091A true MY160091A (en) | 2017-02-28 |
Family
ID=45097599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2012005135A MY160091A (en) | 2010-06-09 | 2011-06-01 | Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9076920B2 (enExample) |
| EP (1) | EP2580303B1 (enExample) |
| JP (1) | JP2013534547A (enExample) |
| KR (1) | KR101894603B1 (enExample) |
| CN (1) | CN103038311B (enExample) |
| ES (1) | ES2699223T3 (enExample) |
| MY (1) | MY160091A (enExample) |
| PH (1) | PH12012502385A1 (enExample) |
| SG (1) | SG186108A1 (enExample) |
| TW (1) | TWI498421B (enExample) |
| WO (1) | WO2011154875A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
| IN2014CN00877A (enExample) * | 2011-08-09 | 2015-04-03 | Basf Se | |
| CN102751384A (zh) * | 2012-07-07 | 2012-10-24 | 蚌埠玻璃工业设计研究院 | 一种晶体硅表面织构方法 |
| CN104584232B (zh) * | 2012-08-10 | 2017-03-08 | 第一工业制药株式会社 | 纹理形成用蚀刻液及使用其的纹理形成方法 |
| KR102118964B1 (ko) * | 2012-12-05 | 2020-06-08 | 엔테그리스, 아이엔씨. | Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법 |
| EP3022171B1 (en) * | 2013-07-16 | 2017-07-05 | Akzo Nobel Chemicals International B.V. | New salts, crystals, complexes, and derivatives of threonine diacetic acid, a process to prepare threonine diacetic acid, and the use thereof |
| WO2015033815A1 (ja) | 2013-09-05 | 2015-03-12 | 株式会社Kit | 水素製造装置、水素製造方法、水素製造用シリコン微細粒子、及び水素製造用シリコン微細粒子の製造方法 |
| JP6373029B2 (ja) * | 2014-03-27 | 2018-08-15 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2015189829A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| DE102014206675A1 (de) * | 2014-04-07 | 2015-10-08 | Gebr. Schmid Gmbh | Verfahren und Lösung zur Herstellung und Nachbehandlung von Wafern |
| JP6417612B2 (ja) * | 2014-12-01 | 2018-11-07 | メック株式会社 | エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法 |
| KR101765212B1 (ko) | 2015-07-17 | 2017-08-04 | 주식회사 위즈켐 | 천연계 태양광 웨이퍼 세정제 조성물 |
| KR102457249B1 (ko) * | 2015-09-18 | 2022-10-21 | 주식회사 이엔에프테크놀로지 | 식각 조성물 |
| CN105118898A (zh) * | 2015-09-23 | 2015-12-02 | 中利腾晖光伏科技有限公司 | 一种硅片表面钝化方法及基于其的n型双面电池的制作方法 |
| WO2017083811A1 (en) * | 2015-11-14 | 2017-05-18 | Tokyo Electron Limited | Method of treating a microelectronic substrate using dilute tmah |
| CN107164109A (zh) * | 2017-03-31 | 2017-09-15 | 吴江创源新材料科技有限公司 | 一种蓝宝石晶片退火前清洗液及其制备方法和清洗工艺 |
| KR102756186B1 (ko) | 2020-02-05 | 2025-01-17 | 삼성전자주식회사 | 반도체 패키지 및 패키지-온-패키지의 제조 방법 |
| CN112689886B (zh) * | 2020-06-16 | 2022-11-18 | 福建晶安光电有限公司 | 一种衬底加工方法及半导体器件制造方法 |
| CN119286525B (zh) * | 2024-12-10 | 2025-06-24 | 嘉兴市小辰光伏科技有限公司 | 一种用于解决TOPCon电池LPCVD双插正面绕扩印的添加剂及清洗工艺 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50158281A (enExample) | 1974-06-10 | 1975-12-22 | ||
| GB1573206A (en) | 1975-11-26 | 1980-08-20 | Tokyo Shibaura Electric Co | Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices |
| FR2372904A1 (fr) | 1976-11-19 | 1978-06-30 | Ibm | Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application |
| JPS6348830A (ja) | 1986-08-19 | 1988-03-01 | Toshiba Corp | 半導体表面処理方法 |
| JPS63274149A (ja) | 1987-05-06 | 1988-11-11 | Mitsubishi Gas Chem Co Inc | 半導体処理剤 |
| US5129955A (en) | 1989-01-11 | 1992-07-14 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method |
| US5207866A (en) | 1991-01-17 | 1993-05-04 | Motorola, Inc. | Anisotropic single crystal silicon etching solution and method |
| US5179414A (en) | 1991-01-22 | 1993-01-12 | Compag Computer Corporation | Apparatus for developing an image on a photoconductive surface |
| TW263531B (enExample) | 1992-03-11 | 1995-11-21 | Mitsubishi Gas Chemical Co | |
| TW274630B (enExample) | 1994-01-28 | 1996-04-21 | Wako Zunyaku Kogyo Kk | |
| US5466389A (en) | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5498293A (en) | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| DK1105778T3 (da) | 1998-05-18 | 2009-10-19 | Mallinckrodt Baker Inc | Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substrater |
| US6417147B2 (en) | 2000-02-29 | 2002-07-09 | Showa Denko K.K. | Cleaning agent composition, method for cleaning and use thereof |
| US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| JP3893104B2 (ja) * | 2002-12-20 | 2007-03-14 | 花王株式会社 | 銅配線半導体基板用ポリマー洗浄剤組成物 |
| DK1664935T3 (da) | 2003-08-19 | 2008-01-28 | Mallinckrodt Baker Inc | Rensesammensætninger til mikroelektronik |
| CN1546627A (zh) * | 2003-12-16 | 2004-11-17 | 上海华虹(集团)有限公司 | 解决湿法剥离氮化硅薄膜新的清洗溶液 |
| SG150509A1 (en) * | 2004-03-01 | 2009-03-30 | Mallinckrodt Baker Inc | Nanoelectronic and microelectronic cleaning compositions |
| WO2006110279A1 (en) * | 2005-04-08 | 2006-10-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
| US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| US20080116170A1 (en) * | 2006-11-17 | 2008-05-22 | Sian Collins | Selective metal wet etch composition and process |
| KR100964153B1 (ko) | 2006-11-22 | 2010-06-17 | 엘지전자 주식회사 | 태양전지의 제조방법 및 그에 의해 제조되는 태양전지 |
| TWI498422B (zh) * | 2007-05-17 | 2015-09-01 | 安堤格里斯公司 | 用於化學機械研磨後(post-CMP)清洗配方之新穎抗氧化劑 |
| CN100546627C (zh) * | 2007-06-29 | 2009-10-07 | 王芬 | 一种外用祛除黄褐斑的中药面膜 |
| KR20100080780A (ko) * | 2007-10-04 | 2010-07-12 | 미츠비시 가스 가가쿠 가부시키가이샤 | 실리콘 에칭액 및 에칭 방법 |
| TWI448551B (zh) | 2008-02-15 | 2014-08-11 | 獅王股份有限公司 | 洗淨劑組成物及電子裝置用基板之洗淨方法 |
| US8623231B2 (en) | 2008-06-11 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for etching an ultra thin film |
| US9228148B2 (en) | 2008-12-04 | 2016-01-05 | Voestalpine Stahl Gmbh | Method for producing molded bodies from sheet steel galvanized on one or both sides |
| CN102656250B (zh) | 2009-09-21 | 2015-02-25 | 巴斯夫欧洲公司 | 含水酸性蚀刻溶液和使单晶和多晶硅衬底的表面纹理化的方法 |
-
2011
- 2011-06-01 CN CN201180037424.XA patent/CN103038311B/zh not_active Expired - Fee Related
- 2011-06-01 WO PCT/IB2011/052418 patent/WO2011154875A1/en not_active Ceased
- 2011-06-01 EP EP11792023.1A patent/EP2580303B1/en not_active Not-in-force
- 2011-06-01 ES ES11792023T patent/ES2699223T3/es active Active
- 2011-06-01 PH PH1/2012/502385A patent/PH12012502385A1/en unknown
- 2011-06-01 SG SG2012087946A patent/SG186108A1/en unknown
- 2011-06-01 KR KR1020137000351A patent/KR101894603B1/ko not_active Expired - Fee Related
- 2011-06-01 MY MYPI2012005135A patent/MY160091A/en unknown
- 2011-06-01 US US13/703,233 patent/US9076920B2/en not_active Expired - Fee Related
- 2011-06-01 JP JP2013513788A patent/JP2013534547A/ja active Pending
- 2011-06-09 TW TW100120249A patent/TWI498421B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP2580303B1 (en) | 2018-08-29 |
| KR101894603B1 (ko) | 2018-09-03 |
| US9076920B2 (en) | 2015-07-07 |
| EP2580303A4 (en) | 2016-01-06 |
| EP2580303A1 (en) | 2013-04-17 |
| CN103038311B (zh) | 2015-10-07 |
| ES2699223T3 (es) | 2019-02-08 |
| KR20130093070A (ko) | 2013-08-21 |
| TW201209157A (en) | 2012-03-01 |
| US20130078756A1 (en) | 2013-03-28 |
| CN103038311A (zh) | 2013-04-10 |
| SG186108A1 (en) | 2013-01-30 |
| TWI498421B (zh) | 2015-09-01 |
| WO2011154875A1 (en) | 2011-12-15 |
| JP2013534547A (ja) | 2013-09-05 |
| PH12012502385A1 (en) | 2022-03-21 |
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