MY160091A - Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates - Google Patents

Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates

Info

Publication number
MY160091A
MY160091A MYPI2012005135A MYPI2012005135A MY160091A MY 160091 A MY160091 A MY 160091A MY PI2012005135 A MYPI2012005135 A MY PI2012005135A MY PI2012005135 A MYPI2012005135 A MY PI2012005135A MY 160091 A MY160091 A MY 160091A
Authority
MY
Malaysia
Prior art keywords
treating
silicon substrates
nxn
cleaning composition
aqueous alkaline
Prior art date
Application number
MYPI2012005135A
Other languages
English (en)
Inventor
Berthold Ferstl
Simon Braun
Achim Fessenbecker
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of MY160091A publication Critical patent/MY160091A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Detergent Compositions (AREA)
MYPI2012005135A 2010-06-09 2011-06-01 Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates MY160091A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35283110P 2010-06-09 2010-06-09

Publications (1)

Publication Number Publication Date
MY160091A true MY160091A (en) 2017-02-28

Family

ID=45097599

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012005135A MY160091A (en) 2010-06-09 2011-06-01 Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates

Country Status (11)

Country Link
US (1) US9076920B2 (enExample)
EP (1) EP2580303B1 (enExample)
JP (1) JP2013534547A (enExample)
KR (1) KR101894603B1 (enExample)
CN (1) CN103038311B (enExample)
ES (1) ES2699223T3 (enExample)
MY (1) MY160091A (enExample)
PH (1) PH12012502385A1 (enExample)
SG (1) SG186108A1 (enExample)
TW (1) TWI498421B (enExample)
WO (1) WO2011154875A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
SG10201605697UA (en) * 2011-08-09 2016-09-29 Basf Se Aqueous alkaline compositions and method for treating the surface of silicon substrates
CN102751384A (zh) * 2012-07-07 2012-10-24 蚌埠玻璃工业设计研究院 一种晶体硅表面织构方法
SG11201500281YA (en) * 2012-08-10 2015-03-30 Dai Ichi Kogyo Seiyaku Co Ltd Etching fluid for forming texture and texture-forming method using same
WO2014089196A1 (en) * 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
US9416095B2 (en) 2013-07-16 2016-08-16 Akzo Nobel Chemicals International B.V. Salts, crystals, complexes, and derivatives of threonine diacetic acid, a process to prepare threonine diacetic acid, and the use thereof
JP6462572B2 (ja) 2013-09-05 2019-01-30 小林　光 水素製造装置、水素製造方法、水素製造用シリコン微細粒子、及び水素製造用シリコン微細粒子の製造方法
JP6373029B2 (ja) * 2014-03-27 2018-08-15 株式会社フジミインコーポレーテッド 研磨用組成物
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
DE102014206675A1 (de) * 2014-04-07 2015-10-08 Gebr. Schmid Gmbh Verfahren und Lösung zur Herstellung und Nachbehandlung von Wafern
JP6417612B2 (ja) * 2014-12-01 2018-11-07 メック株式会社 エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法
KR101765212B1 (ko) 2015-07-17 2017-08-04 주식회사 위즈켐 천연계 태양광 웨이퍼 세정제 조성물
KR102457249B1 (ko) * 2015-09-18 2022-10-21 주식회사 이엔에프테크놀로지 식각 조성물
CN105118898A (zh) * 2015-09-23 2015-12-02 中利腾晖光伏科技有限公司 一种硅片表面钝化方法及基于其的n型双面电池的制作方法
CN108431929B (zh) * 2015-11-14 2023-03-31 东京毅力科创株式会社 使用稀释的tmah处理微电子基底的方法
CN107164109A (zh) * 2017-03-31 2017-09-15 吴江创源新材料科技有限公司 一种蓝宝石晶片退火前清洗液及其制备方法和清洗工艺
KR102756186B1 (ko) 2020-02-05 2025-01-17 삼성전자주식회사 반도체 패키지 및 패키지-온-패키지의 제조 방법
CN112689886B (zh) * 2020-06-16 2022-11-18 福建晶安光电有限公司 一种衬底加工方法及半导体器件制造方法
CN119286525B (zh) * 2024-12-10 2025-06-24 嘉兴市小辰光伏科技有限公司 一种用于解决TOPCon电池LPCVD双插正面绕扩印的添加剂及清洗工艺

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50158281A (enExample) 1974-06-10 1975-12-22
GB1573206A (en) 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
FR2372904A1 (fr) 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
JPS6348830A (ja) 1986-08-19 1988-03-01 Toshiba Corp 半導体表面処理方法
JPS63274149A (ja) 1987-05-06 1988-11-11 Mitsubishi Gas Chem Co Inc 半導体処理剤
US5129955A (en) 1989-01-11 1992-07-14 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method
US5207866A (en) 1991-01-17 1993-05-04 Motorola, Inc. Anisotropic single crystal silicon etching solution and method
US5179414A (en) 1991-01-22 1993-01-12 Compag Computer Corporation Apparatus for developing an image on a photoconductive surface
TW263531B (enExample) 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
TW274630B (enExample) 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5466389A (en) 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5498293A (en) 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
ATE436043T1 (de) 1998-05-18 2009-07-15 Mallinckrodt Baker Inc Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate
US6417147B2 (en) 2000-02-29 2002-07-09 Showa Denko K.K. Cleaning agent composition, method for cleaning and use thereof
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP3893104B2 (ja) 2002-12-20 2007-03-14 花王株式会社 銅配線半導体基板用ポリマー洗浄剤組成物
KR101056544B1 (ko) 2003-08-19 2011-08-11 아반토르 퍼포먼스 머티리얼스, 인크. 마이크로전자 기판용 박리 및 세정 조성물
CN1546627A (zh) 2003-12-16 2004-11-17 上海华虹（集团）有限公司 解决湿法剥离氮化硅薄膜新的清洗溶液
BRPI0508291A (pt) * 2004-03-01 2007-07-31 Mallinckrodt Baker Inc composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza
WO2006110279A1 (en) 2005-04-08 2006-10-19 Sachem, Inc. Selective wet etching of metal nitrides
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
WO2008061258A2 (en) * 2006-11-17 2008-05-22 Sachem, Inc. Selective metal wet etch composition and process
KR100964153B1 (ko) 2006-11-22 2010-06-17 엘지전자 주식회사 태양전지의 제조방법 및 그에 의해 제조되는 태양전지
KR101561708B1 (ko) * 2007-05-17 2015-10-19 인티그리스, 인코포레이티드 Ｃｍｐ후 세정 제제용 신규한 항산화제
CN100546627C (zh) * 2007-06-29 2009-10-07 王芬 一种外用祛除黄褐斑的中药面膜
JPWO2009044647A1 (ja) * 2007-10-04 2011-02-03 三菱瓦斯化学株式会社 シリコンエッチング液およびエッチング方法
JP5286290B2 (ja) 2008-02-15 2013-09-11 ライオン株式会社 洗浄剤組成物および電子デバイス用基板の洗浄方法、並びに電子デバイス用基板
US8623231B2 (en) 2008-06-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for etching an ultra thin film
JP5693463B2 (ja) 2008-12-04 2015-04-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 片面または両面に亜鉛メッキされた鋼板から成形品を製造する方法
KR20120135185A (ko) 2009-09-21 2012-12-12 바스프 에스이 단결정 및 다결정 규소 기판의 표면을 조직화하기 위한 산성 에칭 수용액 및 방법

Also Published As

Publication number Publication date
TW201209157A (en) 2012-03-01
JP2013534547A (ja) 2013-09-05
CN103038311B (zh) 2015-10-07
KR101894603B1 (ko) 2018-09-03
ES2699223T3 (es) 2019-02-08
US9076920B2 (en) 2015-07-07
SG186108A1 (en) 2013-01-30
US20130078756A1 (en) 2013-03-28
TWI498421B (zh) 2015-09-01
CN103038311A (zh) 2013-04-10
KR20130093070A (ko) 2013-08-21
EP2580303B1 (en) 2018-08-29
PH12012502385A1 (en) 2022-03-21
WO2011154875A1 (en) 2011-12-15
EP2580303A1 (en) 2013-04-17
EP2580303A4 (en) 2016-01-06

Similar Documents

Publication Publication Date Title
MY160091A (en) Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
PH12014500150A1 (en) Aqueous alkaline compositions and method for treating the surface of silicon substrates
TW200732844A (en) Positive photosensitive composition and method of forming pattern using the same
WO2009155498A3 (en) Use of pattern recognition to align patterns in a downstream process
TW200741033A (en) Ceramic coating member for semiconductor processing apparatus
SG148975A1 (en) Methods and apparatus for cleaning deposition chamber parts using selective spray etch
MY163493A (en) Aqueous alkaline cleaning compositions and method of their use
EP2372779A3 (en) Alkaline etching liquid for texturing a silicon wafer surface
MY165517A (en) Method for wafer dicing and composition useful thereof
GB201305214D0 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
EP1826829A3 (en) Method for making irregularly surfaced substrate and method for fabricating photovoltaic device
CN107908084A (zh) 一种新式无机环保型退膜液
CN108352318B (zh) 蚀刻液组合物以及蚀刻方法
PH12021551215A1 (en) Aqueous alkaline pre-treatment solution for use prior to deposition of a palladium activation layer, method and use thereof
SG155985A1 (en) Method of producing simox wafer
WO2015187402A8 (en) Aqueous electroless nickel plating bath and method of using the same
TW201130006A (en) Paste for electron emission source and electron emission source
MX2013006916A (es) Procesos y composiciones para mejorar el desempeño anti-corrosion de superficies de zinc pretratadas con oxido de zirconio.
CN103132122B (zh) 一种钢丝在线常温电解磷化方法
US20120034725A1 (en) Method for texturing silicon wafers, treatment liquid therefor, and use
MX2013003581A (es) Proceso para producir granulos que comprende una o mas sales de agentes complejas.
MY132030A (en) Assembly system for stationing semiconductor wafer and process for manufacturing semiconductor wafer
PH12014502518A1 (en) Etching fluid and production method for silicon-based substrate using same
TW200712798A (en) Novel method and system for advanced reticle contaimination cleaning
DE602008001932D1 (de) Seltenerdmagnet und Verfahren zu dessen Herstellung