JP2013534547A - 水性アルカリ性エッチング及び洗浄組成物、及びシリコン基材の表面を処理するための方法 - Google Patents
水性アルカリ性エッチング及び洗浄組成物、及びシリコン基材の表面を処理するための方法 Download PDFInfo
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- JP2013534547A JP2013534547A JP2013513788A JP2013513788A JP2013534547A JP 2013534547 A JP2013534547 A JP 2013534547A JP 2013513788 A JP2013513788 A JP 2013513788A JP 2013513788 A JP2013513788 A JP 2013513788A JP 2013534547 A JP2013534547 A JP 2013534547A
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- silicon substrate
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 171
- 239000010703 silicon Substances 0.000 title claims abstract description 171
- 239000000203 mixture Substances 0.000 title claims abstract description 149
- 239000000758 substrate Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 90
- 238000004140 cleaning Methods 0.000 title claims abstract description 69
- 238000005530 etching Methods 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 claims abstract description 59
- 150000003839 salts Chemical class 0.000 claims abstract description 44
- 239000002253 acid Substances 0.000 claims abstract description 27
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- 230000005611 electricity Effects 0.000 claims abstract description 17
- 230000008859 change Effects 0.000 claims abstract description 15
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 11
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 11
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 10
- 125000002723 alicyclic group Chemical group 0.000 claims abstract description 9
- 239000001257 hydrogen Substances 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 9
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 8
- 150000001340 alkali metals Chemical group 0.000 claims abstract description 8
- 229910052784 alkaline earth metal Chemical group 0.000 claims abstract description 7
- 150000001342 alkaline earth metals Chemical group 0.000 claims abstract description 7
- 125000002877 alkyl aryl group Chemical group 0.000 claims abstract description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract 3
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- 239000011574 phosphorus Substances 0.000 claims description 47
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 38
- -1 sulfate ester Chemical class 0.000 claims description 34
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 12
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- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims description 2
- 125000006238 prop-1-en-1-yl group Chemical group [H]\C(*)=C(/[H])C([H])([H])[H] 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims 1
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000010306 acid treatment Methods 0.000 description 6
- 230000001476 alcoholic effect Effects 0.000 description 6
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- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 239000002736 nonionic surfactant Substances 0.000 description 5
- 159000000000 sodium salts Chemical class 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000011086 high cleaning Methods 0.000 description 4
- 150000002431 hydrogen Chemical group 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
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- 150000001298 alcohols Chemical class 0.000 description 3
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- 239000003945 anionic surfactant Substances 0.000 description 3
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- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 3
- 229960001231 choline Drugs 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
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- 238000006386 neutralization reaction Methods 0.000 description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
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- WYMDDFRYORANCC-UHFFFAOYSA-N 2-[[3-[bis(carboxymethyl)amino]-2-hydroxypropyl]-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)CN(CC(O)=O)CC(O)=O WYMDDFRYORANCC-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C11D7/36—Organic compounds containing phosphorus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- C—CHEMISTRY; METALLURGY
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D2111/10—Objects to be cleaned
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
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- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (3)
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| US35283110P | 2010-06-09 | 2010-06-09 | |
| US61/352,831 | 2010-06-09 | ||
| PCT/IB2011/052418 WO2011154875A1 (en) | 2010-06-09 | 2011-06-01 | Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates |
Publications (2)
| Publication Number | Publication Date |
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| JP2013534547A true JP2013534547A (ja) | 2013-09-05 |
| JP2013534547A5 JP2013534547A5 (enExample) | 2014-07-10 |
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| JP2013513788A Pending JP2013534547A (ja) | 2010-06-09 | 2011-06-01 | 水性アルカリ性エッチング及び洗浄組成物、及びシリコン基材の表面を処理するための方法 |
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| Country | Link |
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| US (1) | US9076920B2 (enExample) |
| EP (1) | EP2580303B1 (enExample) |
| JP (1) | JP2013534547A (enExample) |
| KR (1) | KR101894603B1 (enExample) |
| CN (1) | CN103038311B (enExample) |
| ES (1) | ES2699223T3 (enExample) |
| MY (1) | MY160091A (enExample) |
| PH (1) | PH12012502385A1 (enExample) |
| SG (1) | SG186108A1 (enExample) |
| TW (1) | TWI498421B (enExample) |
| WO (1) | WO2011154875A1 (enExample) |
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| JP2014529641A (ja) * | 2011-08-09 | 2014-11-13 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | シリコン基板の表面を処理するための水性アルカリ性組成物および方法 |
| JP2015189828A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2015189829A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2017118143A (ja) * | 2012-08-10 | 2017-06-29 | 第一工業製薬株式会社 | シリコン基板の表面加工方法 |
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| US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
| CN102751384A (zh) * | 2012-07-07 | 2012-10-24 | 蚌埠玻璃工业设计研究院 | 一种晶体硅表面织构方法 |
| WO2014089196A1 (en) * | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
| US9416095B2 (en) | 2013-07-16 | 2016-08-16 | Akzo Nobel Chemicals International B.V. | Salts, crystals, complexes, and derivatives of threonine diacetic acid, a process to prepare threonine diacetic acid, and the use thereof |
| JP6462572B2 (ja) | 2013-09-05 | 2019-01-30 | 小林 光 | 水素製造装置、水素製造方法、水素製造用シリコン微細粒子、及び水素製造用シリコン微細粒子の製造方法 |
| DE102014206675A1 (de) * | 2014-04-07 | 2015-10-08 | Gebr. Schmid Gmbh | Verfahren und Lösung zur Herstellung und Nachbehandlung von Wafern |
| JP6417612B2 (ja) * | 2014-12-01 | 2018-11-07 | メック株式会社 | エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法 |
| KR101765212B1 (ko) | 2015-07-17 | 2017-08-04 | 주식회사 위즈켐 | 천연계 태양광 웨이퍼 세정제 조성물 |
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| CN112689886B (zh) * | 2020-06-16 | 2022-11-18 | 福建晶安光电有限公司 | 一种衬底加工方法及半导体器件制造方法 |
| CN119286525B (zh) * | 2024-12-10 | 2025-06-24 | 嘉兴市小辰光伏科技有限公司 | 一种用于解决TOPCon电池LPCVD双插正面绕扩印的添加剂及清洗工艺 |
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Cited By (4)
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| JP2014529641A (ja) * | 2011-08-09 | 2014-11-13 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | シリコン基板の表面を処理するための水性アルカリ性組成物および方法 |
| JP2017118143A (ja) * | 2012-08-10 | 2017-06-29 | 第一工業製薬株式会社 | シリコン基板の表面加工方法 |
| JP2015189828A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2015189829A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201209157A (en) | 2012-03-01 |
| CN103038311B (zh) | 2015-10-07 |
| KR101894603B1 (ko) | 2018-09-03 |
| ES2699223T3 (es) | 2019-02-08 |
| US9076920B2 (en) | 2015-07-07 |
| SG186108A1 (en) | 2013-01-30 |
| US20130078756A1 (en) | 2013-03-28 |
| MY160091A (en) | 2017-02-28 |
| TWI498421B (zh) | 2015-09-01 |
| CN103038311A (zh) | 2013-04-10 |
| KR20130093070A (ko) | 2013-08-21 |
| EP2580303B1 (en) | 2018-08-29 |
| PH12012502385A1 (en) | 2022-03-21 |
| WO2011154875A1 (en) | 2011-12-15 |
| EP2580303A1 (en) | 2013-04-17 |
| EP2580303A4 (en) | 2016-01-06 |
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