PH12012502385A1 - Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates - Google Patents
Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substratesInfo
- Publication number
- PH12012502385A1 PH12012502385A1 PH1/2012/502385A PH12012502385A PH12012502385A1 PH 12012502385 A1 PH12012502385 A1 PH 12012502385A1 PH 12012502385 A PH12012502385 A PH 12012502385A PH 12012502385 A1 PH12012502385 A1 PH 12012502385A1
- Authority
- PH
- Philippines
- Prior art keywords
- treating
- silicon substrates
- nxn
- cleaning composition
- aqueous alkaline
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 238000004140 cleaning Methods 0.000 title abstract 2
- 238000005530 etching Methods 0.000 title abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 150000007513 acids Chemical class 0.000 abstract 1
- 125000001931 aliphatic group Chemical group 0.000 abstract 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 125000002877 alkyl aryl group Chemical group 0.000 abstract 1
- 239000000908 ammonium hydroxide Substances 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 125000001453 quaternary ammonium group Chemical group 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35283110P | 2010-06-09 | 2010-06-09 | |
| PCT/IB2011/052418 WO2011154875A1 (en) | 2010-06-09 | 2011-06-01 | Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PH12012502385A1 true PH12012502385A1 (en) | 2022-03-21 |
Family
ID=45097599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PH1/2012/502385A PH12012502385A1 (en) | 2010-06-09 | 2011-06-01 | Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9076920B2 (enExample) |
| EP (1) | EP2580303B1 (enExample) |
| JP (1) | JP2013534547A (enExample) |
| KR (1) | KR101894603B1 (enExample) |
| CN (1) | CN103038311B (enExample) |
| ES (1) | ES2699223T3 (enExample) |
| MY (1) | MY160091A (enExample) |
| PH (1) | PH12012502385A1 (enExample) |
| SG (1) | SG186108A1 (enExample) |
| TW (1) | TWI498421B (enExample) |
| WO (1) | WO2011154875A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
| SG10201605697UA (en) * | 2011-08-09 | 2016-09-29 | Basf Se | Aqueous alkaline compositions and method for treating the surface of silicon substrates |
| CN102751384A (zh) * | 2012-07-07 | 2012-10-24 | 蚌埠玻璃工业设计研究院 | 一种晶体硅表面织构方法 |
| SG11201500281YA (en) * | 2012-08-10 | 2015-03-30 | Dai Ichi Kogyo Seiyaku Co Ltd | Etching fluid for forming texture and texture-forming method using same |
| WO2014089196A1 (en) * | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
| US9416095B2 (en) | 2013-07-16 | 2016-08-16 | Akzo Nobel Chemicals International B.V. | Salts, crystals, complexes, and derivatives of threonine diacetic acid, a process to prepare threonine diacetic acid, and the use thereof |
| JP6462572B2 (ja) | 2013-09-05 | 2019-01-30 | 小林 光 | 水素製造装置、水素製造方法、水素製造用シリコン微細粒子、及び水素製造用シリコン微細粒子の製造方法 |
| JP6373029B2 (ja) * | 2014-03-27 | 2018-08-15 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2015189829A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| DE102014206675A1 (de) * | 2014-04-07 | 2015-10-08 | Gebr. Schmid Gmbh | Verfahren und Lösung zur Herstellung und Nachbehandlung von Wafern |
| JP6417612B2 (ja) * | 2014-12-01 | 2018-11-07 | メック株式会社 | エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法 |
| KR101765212B1 (ko) | 2015-07-17 | 2017-08-04 | 주식회사 위즈켐 | 천연계 태양광 웨이퍼 세정제 조성물 |
| KR102457249B1 (ko) * | 2015-09-18 | 2022-10-21 | 주식회사 이엔에프테크놀로지 | 식각 조성물 |
| CN105118898A (zh) * | 2015-09-23 | 2015-12-02 | 中利腾晖光伏科技有限公司 | 一种硅片表面钝化方法及基于其的n型双面电池的制作方法 |
| CN108431929B (zh) * | 2015-11-14 | 2023-03-31 | 东京毅力科创株式会社 | 使用稀释的tmah处理微电子基底的方法 |
| CN107164109A (zh) * | 2017-03-31 | 2017-09-15 | 吴江创源新材料科技有限公司 | 一种蓝宝石晶片退火前清洗液及其制备方法和清洗工艺 |
| KR102756186B1 (ko) | 2020-02-05 | 2025-01-17 | 삼성전자주식회사 | 반도체 패키지 및 패키지-온-패키지의 제조 방법 |
| CN112689886B (zh) * | 2020-06-16 | 2022-11-18 | 福建晶安光电有限公司 | 一种衬底加工方法及半导体器件制造方法 |
| CN119286525B (zh) * | 2024-12-10 | 2025-06-24 | 嘉兴市小辰光伏科技有限公司 | 一种用于解决TOPCon电池LPCVD双插正面绕扩印的添加剂及清洗工艺 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS50158281A (enExample) | 1974-06-10 | 1975-12-22 | ||
| GB1573206A (en) | 1975-11-26 | 1980-08-20 | Tokyo Shibaura Electric Co | Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices |
| FR2372904A1 (fr) | 1976-11-19 | 1978-06-30 | Ibm | Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application |
| JPS6348830A (ja) | 1986-08-19 | 1988-03-01 | Toshiba Corp | 半導体表面処理方法 |
| JPS63274149A (ja) | 1987-05-06 | 1988-11-11 | Mitsubishi Gas Chem Co Inc | 半導体処理剤 |
| US5129955A (en) | 1989-01-11 | 1992-07-14 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method |
| US5207866A (en) | 1991-01-17 | 1993-05-04 | Motorola, Inc. | Anisotropic single crystal silicon etching solution and method |
| US5179414A (en) | 1991-01-22 | 1993-01-12 | Compag Computer Corporation | Apparatus for developing an image on a photoconductive surface |
| TW263531B (enExample) | 1992-03-11 | 1995-11-21 | Mitsubishi Gas Chemical Co | |
| TW274630B (enExample) | 1994-01-28 | 1996-04-21 | Wako Zunyaku Kogyo Kk | |
| US5466389A (en) | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5498293A (en) | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| ATE436043T1 (de) | 1998-05-18 | 2009-07-15 | Mallinckrodt Baker Inc | Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate |
| US6417147B2 (en) | 2000-02-29 | 2002-07-09 | Showa Denko K.K. | Cleaning agent composition, method for cleaning and use thereof |
| US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| JP3893104B2 (ja) | 2002-12-20 | 2007-03-14 | 花王株式会社 | 銅配線半導体基板用ポリマー洗浄剤組成物 |
| KR101056544B1 (ko) | 2003-08-19 | 2011-08-11 | 아반토르 퍼포먼스 머티리얼스, 인크. | 마이크로전자 기판용 박리 및 세정 조성물 |
| CN1546627A (zh) | 2003-12-16 | 2004-11-17 | 上海华虹(集团)有限公司 | 解决湿法剥离氮化硅薄膜新的清洗溶液 |
| BRPI0508291A (pt) * | 2004-03-01 | 2007-07-31 | Mallinckrodt Baker Inc | composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza |
| WO2006110279A1 (en) | 2005-04-08 | 2006-10-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
| US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| WO2008061258A2 (en) * | 2006-11-17 | 2008-05-22 | Sachem, Inc. | Selective metal wet etch composition and process |
| KR100964153B1 (ko) | 2006-11-22 | 2010-06-17 | 엘지전자 주식회사 | 태양전지의 제조방법 및 그에 의해 제조되는 태양전지 |
| KR101561708B1 (ko) * | 2007-05-17 | 2015-10-19 | 인티그리스, 인코포레이티드 | Cmp후 세정 제제용 신규한 항산화제 |
| CN100546627C (zh) * | 2007-06-29 | 2009-10-07 | 王芬 | 一种外用祛除黄褐斑的中药面膜 |
| JPWO2009044647A1 (ja) * | 2007-10-04 | 2011-02-03 | 三菱瓦斯化学株式会社 | シリコンエッチング液およびエッチング方法 |
| JP5286290B2 (ja) | 2008-02-15 | 2013-09-11 | ライオン株式会社 | 洗浄剤組成物および電子デバイス用基板の洗浄方法、並びに電子デバイス用基板 |
| US8623231B2 (en) | 2008-06-11 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for etching an ultra thin film |
| JP5693463B2 (ja) | 2008-12-04 | 2015-04-01 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 片面または両面に亜鉛メッキされた鋼板から成形品を製造する方法 |
| KR20120135185A (ko) | 2009-09-21 | 2012-12-12 | 바스프 에스이 | 단결정 및 다결정 규소 기판의 표면을 조직화하기 위한 산성 에칭 수용액 및 방법 |
-
2011
- 2011-06-01 EP EP11792023.1A patent/EP2580303B1/en not_active Not-in-force
- 2011-06-01 SG SG2012087946A patent/SG186108A1/en unknown
- 2011-06-01 KR KR1020137000351A patent/KR101894603B1/ko not_active Expired - Fee Related
- 2011-06-01 CN CN201180037424.XA patent/CN103038311B/zh not_active Expired - Fee Related
- 2011-06-01 WO PCT/IB2011/052418 patent/WO2011154875A1/en not_active Ceased
- 2011-06-01 MY MYPI2012005135A patent/MY160091A/en unknown
- 2011-06-01 JP JP2013513788A patent/JP2013534547A/ja active Pending
- 2011-06-01 ES ES11792023T patent/ES2699223T3/es active Active
- 2011-06-01 US US13/703,233 patent/US9076920B2/en not_active Expired - Fee Related
- 2011-06-01 PH PH1/2012/502385A patent/PH12012502385A1/en unknown
- 2011-06-09 TW TW100120249A patent/TWI498421B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW201209157A (en) | 2012-03-01 |
| JP2013534547A (ja) | 2013-09-05 |
| CN103038311B (zh) | 2015-10-07 |
| KR101894603B1 (ko) | 2018-09-03 |
| ES2699223T3 (es) | 2019-02-08 |
| US9076920B2 (en) | 2015-07-07 |
| SG186108A1 (en) | 2013-01-30 |
| US20130078756A1 (en) | 2013-03-28 |
| MY160091A (en) | 2017-02-28 |
| TWI498421B (zh) | 2015-09-01 |
| CN103038311A (zh) | 2013-04-10 |
| KR20130093070A (ko) | 2013-08-21 |
| EP2580303B1 (en) | 2018-08-29 |
| WO2011154875A1 (en) | 2011-12-15 |
| EP2580303A1 (en) | 2013-04-17 |
| EP2580303A4 (en) | 2016-01-06 |
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