PH12012502385A1 - Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates - Google Patents

Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates

Info

Publication number
PH12012502385A1
PH12012502385A1 PH1/2012/502385A PH12012502385A PH12012502385A1 PH 12012502385 A1 PH12012502385 A1 PH 12012502385A1 PH 12012502385 A PH12012502385 A PH 12012502385A PH 12012502385 A1 PH12012502385 A1 PH 12012502385A1
Authority
PH
Philippines
Prior art keywords
treating
silicon substrates
nxn
cleaning composition
aqueous alkaline
Prior art date
Application number
PH1/2012/502385A
Other languages
English (en)
Inventor
Achim FeãŸEnbecker
Simon Braun
Berthold Ferstl
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of PH12012502385A1 publication Critical patent/PH12012502385A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
  • Photovoltaic Devices (AREA)
  • General Chemical & Material Sciences (AREA)
PH1/2012/502385A 2010-06-09 2011-06-01 Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates PH12012502385A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35283110P 2010-06-09 2010-06-09
PCT/IB2011/052418 WO2011154875A1 (en) 2010-06-09 2011-06-01 Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates

Publications (1)

Publication Number Publication Date
PH12012502385A1 true PH12012502385A1 (en) 2022-03-21

Family

ID=45097599

Family Applications (1)

Application Number Title Priority Date Filing Date
PH1/2012/502385A PH12012502385A1 (en) 2010-06-09 2011-06-01 Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates

Country Status (11)

Country Link
US (1) US9076920B2 (enExample)
EP (1) EP2580303B1 (enExample)
JP (1) JP2013534547A (enExample)
KR (1) KR101894603B1 (enExample)
CN (1) CN103038311B (enExample)
ES (1) ES2699223T3 (enExample)
MY (1) MY160091A (enExample)
PH (1) PH12012502385A1 (enExample)
SG (1) SG186108A1 (enExample)
TW (1) TWI498421B (enExample)
WO (1) WO2011154875A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
WO2013021296A1 (en) * 2011-08-09 2013-02-14 Basf Se Aqueous alkaline compositions and method for treating the surface of silicon substrates
CN102751384A (zh) * 2012-07-07 2012-10-24 蚌埠玻璃工业设计研究院 一种晶体硅表面织构方法
WO2014024414A1 (ja) * 2012-08-10 2014-02-13 第一工業製薬株式会社 テクスチャー形成用エッチング液およびそれを用いたテクスチャー形成方法
KR102118964B1 (ko) * 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
CN105377809B (zh) * 2013-07-16 2018-06-08 阿克佐诺贝尔化学国际公司 苏氨酸二乙酸的新型盐、晶体、络合物和衍生物，制备苏氨酸二乙酸的方法及其用途
JP6462572B2 (ja) * 2013-09-05 2019-01-30 小林　光 水素製造装置、水素製造方法、水素製造用シリコン微細粒子、及び水素製造用シリコン微細粒子の製造方法
JP6373029B2 (ja) * 2014-03-27 2018-08-15 株式会社フジミインコーポレーテッド 研磨用組成物
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
DE102014206675A1 (de) * 2014-04-07 2015-10-08 Gebr. Schmid Gmbh Verfahren und Lösung zur Herstellung und Nachbehandlung von Wafern
JP6417612B2 (ja) * 2014-12-01 2018-11-07 メック株式会社 エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法
KR101765212B1 (ko) 2015-07-17 2017-08-04 주식회사 위즈켐 천연계 태양광 웨이퍼 세정제 조성물
KR102457249B1 (ko) * 2015-09-18 2022-10-21 주식회사 이엔에프테크놀로지 식각 조성물
CN105118898A (zh) * 2015-09-23 2015-12-02 中利腾晖光伏科技有限公司 一种硅片表面钝化方法及基于其的n型双面电池的制作方法
KR102549285B1 (ko) * 2015-11-14 2023-06-28 도쿄엘렉트론가부시키가이샤 묽은 tmah을 사용하여 마이크로전자 기판을 처리하는 방법
CN107164109A (zh) * 2017-03-31 2017-09-15 吴江创源新材料科技有限公司 一种蓝宝石晶片退火前清洗液及其制备方法和清洗工艺
KR102756186B1 (ko) 2020-02-05 2025-01-17 삼성전자주식회사 반도체 패키지 및 패키지-온-패키지의 제조 방법
CN112689886B (zh) * 2020-06-16 2022-11-18 福建晶安光电有限公司 一种衬底加工方法及半导体器件制造方法
CN119286525B (zh) * 2024-12-10 2025-06-24 嘉兴市小辰光伏科技有限公司 一种用于解决TOPCon电池LPCVD双插正面绕扩印的添加剂及清洗工艺

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50158281A (enExample) 1974-06-10 1975-12-22
GB1573206A (en) 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
FR2372904A1 (fr) 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
JPS6348830A (ja) 1986-08-19 1988-03-01 Toshiba Corp 半導体表面処理方法
JPS63274149A (ja) 1987-05-06 1988-11-11 Mitsubishi Gas Chem Co Inc 半導体処理剤
US5129955A (en) 1989-01-11 1992-07-14 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method
US5207866A (en) 1991-01-17 1993-05-04 Motorola, Inc. Anisotropic single crystal silicon etching solution and method
US5179414A (en) 1991-01-22 1993-01-12 Compag Computer Corporation Apparatus for developing an image on a photoconductive surface
TW263531B (enExample) 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
TW274630B (enExample) 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5466389A (en) 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5498293A (en) 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
AU4189599A (en) 1998-05-18 1999-12-06 Mallinckrodt, Inc. Silicate-containing alkaline compositions for cleaning microelectronic substrates
US6417147B2 (en) 2000-02-29 2002-07-09 Showa Denko K.K. Cleaning agent composition, method for cleaning and use thereof
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP3893104B2 (ja) * 2002-12-20 2007-03-14 花王株式会社 銅配線半導体基板用ポリマー洗浄剤組成物
CN1839355B (zh) 2003-08-19 2012-07-11 安万托特性材料股份有限公司 用于微电子设备的剥离和清洁组合物
CN1546627A (zh) * 2003-12-16 2004-11-17 上海华虹（集团）有限公司 解决湿法剥离氮化硅薄膜新的清洗溶液
JP4633785B2 (ja) * 2004-03-01 2011-02-16 アバンター・パフォーマンス・マテリアルズ・インコーポレイテッド ナノエレクトロニクスおよびマイクロエレクトロニクスの洗浄組成物
US20060226122A1 (en) 2005-04-08 2006-10-12 Wojtczak William A Selective wet etching of metal nitrides
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US20080116170A1 (en) * 2006-11-17 2008-05-22 Sian Collins Selective metal wet etch composition and process
KR100964153B1 (ko) * 2006-11-22 2010-06-17 엘지전자 주식회사 태양전지의 제조방법 및 그에 의해 제조되는 태양전지
KR101644763B1 (ko) * 2007-05-17 2016-08-01 엔테그리스, 아이엔씨. Ｃｍｐ후 세정 제제용 신규한 항산화제
CN100546627C (zh) * 2007-06-29 2009-10-07 王芬 一种外用祛除黄褐斑的中药面膜
KR20100080780A (ko) * 2007-10-04 2010-07-12 미츠비시 가스 가가쿠 가부시키가이샤 실리콘 에칭액 및 에칭 방법
JP5286290B2 (ja) 2008-02-15 2013-09-11 ライオン株式会社 洗浄剤組成物および電子デバイス用基板の洗浄方法、並びに電子デバイス用基板
US8623231B2 (en) * 2008-06-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for etching an ultra thin film
JP5693463B2 (ja) 2008-12-04 2015-04-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 片面または両面に亜鉛メッキされた鋼板から成形品を製造する方法
WO2011032880A1 (en) 2009-09-21 2011-03-24 Basf Se Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates

Also Published As

Publication number Publication date
SG186108A1 (en) 2013-01-30
EP2580303A1 (en) 2013-04-17
TWI498421B (zh) 2015-09-01
CN103038311B (zh) 2015-10-07
KR101894603B1 (ko) 2018-09-03
EP2580303B1 (en) 2018-08-29
US20130078756A1 (en) 2013-03-28
MY160091A (en) 2017-02-28
ES2699223T3 (es) 2019-02-08
CN103038311A (zh) 2013-04-10
KR20130093070A (ko) 2013-08-21
TW201209157A (en) 2012-03-01
WO2011154875A1 (en) 2011-12-15
US9076920B2 (en) 2015-07-07
JP2013534547A (ja) 2013-09-05
EP2580303A4 (en) 2016-01-06

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