IN2014DN07580A - - Google Patents

Info

Publication number
IN2014DN07580A
IN2014DN07580A IN7580DEN2014A IN2014DN07580A IN 2014DN07580 A IN2014DN07580 A IN 2014DN07580A IN 7580DEN2014 A IN7580DEN2014 A IN 7580DEN2014A IN 2014DN07580 A IN2014DN07580 A IN 2014DN07580A
Authority
IN
India
Prior art keywords
etching
silicon surface
solution
etching solution
nanometers
Prior art date
Application number
Other languages
English (en)
Inventor
Fatima Toor
Howard M Branz
Original Assignee
Alliance Sustainable Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/423,745 external-priority patent/US8815104B2/en
Application filed by Alliance Sustainable Energy filed Critical Alliance Sustainable Energy
Publication of IN2014DN07580A publication Critical patent/IN2014DN07580A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • ing And Chemical Polishing (AREA)
IN7580DEN2014 2012-03-19 2013-03-11 IN2014DN07580A (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/423,745 US8815104B2 (en) 2008-03-21 2012-03-19 Copper-assisted, anti-reflection etching of silicon surfaces
PCT/US2013/030257 WO2013142122A1 (en) 2012-03-19 2013-03-11 Copper-assisted, anti-reflection etching of silicon surfaces

Publications (1)

Publication Number Publication Date
IN2014DN07580A true IN2014DN07580A (enExample) 2015-04-24

Family

ID=49223188

Family Applications (1)

Application Number Title Priority Date Filing Date
IN7580DEN2014 IN2014DN07580A (enExample) 2012-03-19 2013-03-11

Country Status (6)

Country Link
EP (2) EP2828895B1 (enExample)
JP (1) JP5866477B2 (enExample)
CN (1) CN104584231A (enExample)
CA (1) CA2866616A1 (enExample)
IN (1) IN2014DN07580A (enExample)
WO (1) WO2013142122A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8815104B2 (en) 2008-03-21 2014-08-26 Alliance For Sustainable Energy, Llc Copper-assisted, anti-reflection etching of silicon surfaces
US8828765B2 (en) 2010-06-09 2014-09-09 Alliance For Sustainable Energy, Llc Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces
CN103283001A (zh) 2011-03-08 2013-09-04 可持续能源联盟有限责任公司 蓝光响应增强的高效黑硅光伏器件
EP2828895B1 (en) 2012-03-19 2020-10-07 Alliance for Sustainable Energy, LLC Copper-assisted, anti-reflection etching of silicon surfaces
CN103746038A (zh) * 2014-01-09 2014-04-23 上海交通大学 一种多孔硅模板的制备方法
CN105633180B (zh) * 2016-03-23 2017-03-15 湖南大学 石墨烯辅助硅片湿法制绒的方法
CN106498502A (zh) * 2016-12-06 2017-03-15 南京理工大学 一种利用金属辅助刻蚀具有木材反向结构硅表面的方法
CN106672974B (zh) * 2016-12-15 2018-11-13 西南交通大学 一种制备硅微纳分级结构的新方法
CN107946386A (zh) * 2017-12-01 2018-04-20 浙江晶科能源有限公司 一种黑硅电池的绒面制备方法
CN108133968A (zh) * 2017-12-27 2018-06-08 南京理工大学 利用松木结构多孔铜辅助刻蚀锥状阵列硅表面的方法
EP3739637A1 (de) 2019-05-15 2020-11-18 Meyer Burger (Germany) GmbH Verfahren zur herstellung texturierter solarwafer
TWI742821B (zh) * 2020-08-27 2021-10-11 國立成功大學 抗反射結構、其製造方法、光電元件及由溶液中回收銀離子的方法
CN114291786A (zh) * 2021-12-29 2022-04-08 杭州电子科技大学 一种磁场与振动结合的硅片微纳米结构制备装置
CN114314504A (zh) * 2021-12-29 2022-04-12 杭州电子科技大学 一种磁场与机械振动结合的硅纳米结构制备方法
CN115506031B (zh) * 2022-09-29 2025-10-31 南京信息职业技术学院 一种超滑硅表面及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4049329B2 (ja) * 2002-06-06 2008-02-20 関西ティー・エル・オー株式会社 太陽電池用多結晶シリコン基板の製造方法
TW200620451A (en) * 2004-11-09 2006-06-16 Univ Osaka Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method
JP2007194485A (ja) * 2006-01-20 2007-08-02 Osaka Univ 太陽電池用シリコン基板の製造方法
JP5442453B2 (ja) * 2007-02-15 2014-03-12 マサチューセッツ インスティテュート オブ テクノロジー 凹凸化された表面を備えた太陽電池
KR100971658B1 (ko) * 2008-01-03 2010-07-22 엘지전자 주식회사 실리콘 태양전지의 텍스처링 방법
US8075792B1 (en) * 2008-03-21 2011-12-13 Alliance For Sustainable Energy, Llc Nanoparticle-based etching of silicon surfaces
US20090236317A1 (en) * 2008-03-21 2009-09-24 Midwest Research Institute Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions
WO2011056948A2 (en) * 2009-11-05 2011-05-12 Advanced Technology Materials, Inc. Methods of texturing surfaces for controlled reflection
TWI472477B (zh) * 2010-03-02 2015-02-11 國立臺灣大學 矽奈米結構與其製造方法及應用
US8193095B2 (en) * 2010-05-28 2012-06-05 National Taiwan University Method for forming silicon trench
TW201200465A (en) * 2010-06-29 2012-01-01 Univ Nat Central Nano/micro-structure and fabrication method thereof
JP2010245568A (ja) * 2010-07-21 2010-10-28 Mitsubishi Electric Corp 太陽電池の製造方法
CN102051618A (zh) * 2010-11-05 2011-05-11 云南师范大学 一种基于液相化学反应的黑硅制备方法
JP5467697B2 (ja) * 2011-10-07 2014-04-09 株式会社ジェイ・イー・ティ 太陽電池の製造方法
EP2828895B1 (en) 2012-03-19 2020-10-07 Alliance for Sustainable Energy, LLC Copper-assisted, anti-reflection etching of silicon surfaces
CN102768951A (zh) * 2012-07-06 2012-11-07 南京大学 金属铜离子辅助刻蚀制备黑硅的方法

Also Published As

Publication number Publication date
JP2015512566A (ja) 2015-04-27
CA2866616A1 (en) 2013-09-26
WO2013142122A1 (en) 2013-09-26
EP2828895B1 (en) 2020-10-07
CN104584231A (zh) 2015-04-29
EP3780121A1 (en) 2021-02-17
JP5866477B2 (ja) 2016-02-17
EP2828895A1 (en) 2015-01-28
EP2828895A4 (en) 2015-10-28

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