JP5866477B2 - シリコン表面の銅支援反射防止エッチング - Google Patents

シリコン表面の銅支援反射防止エッチング Download PDF

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JP5866477B2
JP5866477B2 JP2015501724A JP2015501724A JP5866477B2 JP 5866477 B2 JP5866477 B2 JP 5866477B2 JP 2015501724 A JP2015501724 A JP 2015501724A JP 2015501724 A JP2015501724 A JP 2015501724A JP 5866477 B2 JP5866477 B2 JP 5866477B2
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etching
silicon
solution
silicon surface
percent
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JP2015512566A (ja
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ファティマ トーア，
ファティマ トーア，
エム． ブランツ，ハワード
エム． ブランツ，ハワード
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • ing And Chemical Polishing (AREA)
JP2015501724A 2012-03-19 2013-03-11 シリコン表面の銅支援反射防止エッチング Active JP5866477B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/423,745 2012-03-19
US13/423,745 US8815104B2 (en) 2008-03-21 2012-03-19 Copper-assisted, anti-reflection etching of silicon surfaces
PCT/US2013/030257 WO2013142122A1 (en) 2012-03-19 2013-03-11 Copper-assisted, anti-reflection etching of silicon surfaces

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JP2015512566A JP2015512566A (ja) 2015-04-27
JP5866477B2 true JP5866477B2 (ja) 2016-02-17

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JP2015501724A Active JP5866477B2 (ja) 2012-03-19 2013-03-11 シリコン表面の銅支援反射防止エッチング

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EP (2) EP2828895B1 (enExample)
JP (1) JP5866477B2 (enExample)
CN (1) CN104584231A (enExample)
CA (1) CA2866616A1 (enExample)
IN (1) IN2014DN07580A (enExample)
WO (1) WO2013142122A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8815104B2 (en) 2008-03-21 2014-08-26 Alliance For Sustainable Energy, Llc Copper-assisted, anti-reflection etching of silicon surfaces
US8828765B2 (en) 2010-06-09 2014-09-09 Alliance For Sustainable Energy, Llc Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces
CN103283001A (zh) 2011-03-08 2013-09-04 可持续能源联盟有限责任公司 蓝光响应增强的高效黑硅光伏器件
EP2828895B1 (en) 2012-03-19 2020-10-07 Alliance for Sustainable Energy, LLC Copper-assisted, anti-reflection etching of silicon surfaces
CN103746038A (zh) * 2014-01-09 2014-04-23 上海交通大学 一种多孔硅模板的制备方法
CN105633180B (zh) * 2016-03-23 2017-03-15 湖南大学 石墨烯辅助硅片湿法制绒的方法
CN106498502A (zh) * 2016-12-06 2017-03-15 南京理工大学 一种利用金属辅助刻蚀具有木材反向结构硅表面的方法
CN106672974B (zh) * 2016-12-15 2018-11-13 西南交通大学 一种制备硅微纳分级结构的新方法
CN107946386A (zh) * 2017-12-01 2018-04-20 浙江晶科能源有限公司 一种黑硅电池的绒面制备方法
CN108133968A (zh) * 2017-12-27 2018-06-08 南京理工大学 利用松木结构多孔铜辅助刻蚀锥状阵列硅表面的方法
EP3739637A1 (de) 2019-05-15 2020-11-18 Meyer Burger (Germany) GmbH Verfahren zur herstellung texturierter solarwafer
TWI742821B (zh) * 2020-08-27 2021-10-11 國立成功大學 抗反射結構、其製造方法、光電元件及由溶液中回收銀離子的方法
CN114291786A (zh) * 2021-12-29 2022-04-08 杭州电子科技大学 一种磁场与振动结合的硅片微纳米结构制备装置
CN114314504A (zh) * 2021-12-29 2022-04-12 杭州电子科技大学 一种磁场与机械振动结合的硅纳米结构制备方法
CN115506031B (zh) * 2022-09-29 2025-10-31 南京信息职业技术学院 一种超滑硅表面及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4049329B2 (ja) * 2002-06-06 2008-02-20 関西ティー・エル・オー株式会社 太陽電池用多結晶シリコン基板の製造方法
TW200620451A (en) * 2004-11-09 2006-06-16 Univ Osaka Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method
JP2007194485A (ja) * 2006-01-20 2007-08-02 Osaka Univ 太陽電池用シリコン基板の製造方法
JP5442453B2 (ja) * 2007-02-15 2014-03-12 マサチューセッツ インスティテュート オブ テクノロジー 凹凸化された表面を備えた太陽電池
KR100971658B1 (ko) * 2008-01-03 2010-07-22 엘지전자 주식회사 실리콘 태양전지의 텍스처링 방법
US8075792B1 (en) * 2008-03-21 2011-12-13 Alliance For Sustainable Energy, Llc Nanoparticle-based etching of silicon surfaces
US20090236317A1 (en) * 2008-03-21 2009-09-24 Midwest Research Institute Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions
WO2011056948A2 (en) * 2009-11-05 2011-05-12 Advanced Technology Materials, Inc. Methods of texturing surfaces for controlled reflection
TWI472477B (zh) * 2010-03-02 2015-02-11 國立臺灣大學 矽奈米結構與其製造方法及應用
US8193095B2 (en) * 2010-05-28 2012-06-05 National Taiwan University Method for forming silicon trench
TW201200465A (en) * 2010-06-29 2012-01-01 Univ Nat Central Nano/micro-structure and fabrication method thereof
JP2010245568A (ja) * 2010-07-21 2010-10-28 Mitsubishi Electric Corp 太陽電池の製造方法
CN102051618A (zh) * 2010-11-05 2011-05-11 云南师范大学 一种基于液相化学反应的黑硅制备方法
JP5467697B2 (ja) * 2011-10-07 2014-04-09 株式会社ジェイ・イー・ティ 太陽電池の製造方法
EP2828895B1 (en) 2012-03-19 2020-10-07 Alliance for Sustainable Energy, LLC Copper-assisted, anti-reflection etching of silicon surfaces
CN102768951A (zh) * 2012-07-06 2012-11-07 南京大学 金属铜离子辅助刻蚀制备黑硅的方法

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Publication number Publication date
JP2015512566A (ja) 2015-04-27
CA2866616A1 (en) 2013-09-26
WO2013142122A1 (en) 2013-09-26
EP2828895B1 (en) 2020-10-07
CN104584231A (zh) 2015-04-29
EP3780121A1 (en) 2021-02-17
EP2828895A1 (en) 2015-01-28
EP2828895A4 (en) 2015-10-28
IN2014DN07580A (enExample) 2015-04-24

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