IN2014DN07580A - - Google Patents

Info

Publication number
IN2014DN07580A
IN2014DN07580A IN7580DEN2014A IN2014DN07580A IN 2014DN07580 A IN2014DN07580 A IN 2014DN07580A IN 7580DEN2014 A IN7580DEN2014 A IN 7580DEN2014A IN 2014DN07580 A IN2014DN07580 A IN 2014DN07580A
Authority
IN
India
Prior art keywords
etching
silicon surface
solution
etching solution
nanometers
Prior art date
Application number
Inventor
Fatima Toor
Howard M Branz
Original Assignee
Alliance Sustainable Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/423,745 external-priority patent/US8815104B2/en
Application filed by Alliance Sustainable Energy filed Critical Alliance Sustainable Energy
Publication of IN2014DN07580A publication Critical patent/IN2014DN07580A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116) with a particle to particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant etchant solution (146) e.g. an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with for example ultrasonic agitation and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching copper nanoparticles enhance or drive the etching process.
IN7580DEN2014 2012-03-19 2013-03-11 IN2014DN07580A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/423,745 US8815104B2 (en) 2008-03-21 2012-03-19 Copper-assisted, anti-reflection etching of silicon surfaces
PCT/US2013/030257 WO2013142122A1 (en) 2012-03-19 2013-03-11 Copper-assisted, anti-reflection etching of silicon surfaces

Publications (1)

Publication Number Publication Date
IN2014DN07580A true IN2014DN07580A (en) 2015-04-24

Family

ID=49223188

Family Applications (1)

Application Number Title Priority Date Filing Date
IN7580DEN2014 IN2014DN07580A (en) 2012-03-19 2013-03-11

Country Status (6)

Country Link
EP (2) EP2828895B1 (en)
JP (1) JP5866477B2 (en)
CN (1) CN104584231A (en)
CA (1) CA2866616A1 (en)
IN (1) IN2014DN07580A (en)
WO (1) WO2013142122A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8815104B2 (en) 2008-03-21 2014-08-26 Alliance For Sustainable Energy, Llc Copper-assisted, anti-reflection etching of silicon surfaces
US8828765B2 (en) 2010-06-09 2014-09-09 Alliance For Sustainable Energy, Llc Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces
JP2014512673A (en) 2011-03-08 2014-05-22 アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー Efficient black silicon photovoltaic device with improved blue sensitivity
WO2013142122A1 (en) 2012-03-19 2013-09-26 Alliance For Sustainable Energy, Llc Copper-assisted, anti-reflection etching of silicon surfaces
CN103746038A (en) * 2014-01-09 2014-04-23 上海交通大学 Preparation method of porous silicon template
CN105633180B (en) * 2016-03-23 2017-03-15 湖南大学 The method of Graphene auxiliary silicon slice wet-method etching
CN106498502A (en) * 2016-12-06 2017-03-15 南京理工大学 A kind of method that utilization metal auxiliary etch has timber reverse geometry silicon face
CN106672974B (en) * 2016-12-15 2018-11-13 西南交通大学 A kind of new method preparing silicon micro-nano hierarchical structure
CN107946386A (en) * 2017-12-01 2018-04-20 浙江晶科能源有限公司 A kind of suede surface preparation method of black silicon battery
CN108133968A (en) * 2017-12-27 2018-06-08 南京理工大学 Utilize the method for pine structural porous copper auxiliary etch taper array silicon face
EP3739637A1 (en) 2019-05-15 2020-11-18 Meyer Burger (Germany) GmbH Method for producing textured solar wafer
TWI742821B (en) * 2020-08-27 2021-10-11 國立成功大學 Anti-reflection structure, manufacturing method thereof, photoelectric element and method for recovering silver ions from solution
CN114314504A (en) * 2021-12-29 2022-04-12 杭州电子科技大学 Preparation method of magnetic field and mechanical vibration combined silicon nanostructure
CN114291786A (en) * 2021-12-29 2022-04-08 杭州电子科技大学 A device for preparing silicon wafer micro-nano structure combined with magnetic field and vibration
CN115506031A (en) * 2022-09-29 2022-12-23 南京信息职业技术学院 Ultra-smooth silicon surface and preparation method thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4049329B2 (en) * 2002-06-06 2008-02-20 関西ティー・エル・オー株式会社 Method for producing polycrystalline silicon substrate for solar cell
TW200620451A (en) * 2004-11-09 2006-06-16 Univ Osaka Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method
JP2007194485A (en) * 2006-01-20 2007-08-02 Osaka Univ Method for manufacturing silicon substrate for solar cell
MY158347A (en) * 2007-02-15 2016-09-30 Massachusetts Inst Technology Solar cells with textured surfaces
KR100971658B1 (en) * 2008-01-03 2010-07-22 엘지전자 주식회사 Texturing Methods of Silicon Solar Cells
US20090236317A1 (en) * 2008-03-21 2009-09-24 Midwest Research Institute Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions
US8075792B1 (en) * 2008-03-21 2011-12-13 Alliance For Sustainable Energy, Llc Nanoparticle-based etching of silicon surfaces
WO2011056948A2 (en) * 2009-11-05 2011-05-12 Advanced Technology Materials, Inc. Methods of texturing surfaces for controlled reflection
TWI472477B (en) * 2010-03-02 2015-02-11 Univ Nat Taiwan 矽 nano structure and its manufacturing method and application
US8193095B2 (en) * 2010-05-28 2012-06-05 National Taiwan University Method for forming silicon trench
TW201200465A (en) * 2010-06-29 2012-01-01 Univ Nat Central Nano/micro-structure and fabrication method thereof
JP2010245568A (en) * 2010-07-21 2010-10-28 Mitsubishi Electric Corp Manufacturing method of solar cell
CN102051618A (en) * 2010-11-05 2011-05-11 云南师范大学 Method for preparing black silicon based on liquid-phase chemical reaction
JP5467697B2 (en) * 2011-10-07 2014-04-09 株式会社ジェイ・イー・ティ Manufacturing method of solar cell
WO2013142122A1 (en) 2012-03-19 2013-09-26 Alliance For Sustainable Energy, Llc Copper-assisted, anti-reflection etching of silicon surfaces
CN102768951A (en) * 2012-07-06 2012-11-07 南京大学 Method for preparing black silicon by metal copper ion assisted etching

Also Published As

Publication number Publication date
EP3780121A1 (en) 2021-02-17
EP2828895A4 (en) 2015-10-28
EP2828895A1 (en) 2015-01-28
JP2015512566A (en) 2015-04-27
CA2866616A1 (en) 2013-09-26
CN104584231A (en) 2015-04-29
JP5866477B2 (en) 2016-02-17
EP2828895B1 (en) 2020-10-07
WO2013142122A1 (en) 2013-09-26

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