CN114291786A - Magnetic field and vibration combined silicon wafer micro-nano structure preparation device - Google Patents
Magnetic field and vibration combined silicon wafer micro-nano structure preparation device Download PDFInfo
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- CN114291786A CN114291786A CN202111681487.0A CN202111681487A CN114291786A CN 114291786 A CN114291786 A CN 114291786A CN 202111681487 A CN202111681487 A CN 202111681487A CN 114291786 A CN114291786 A CN 114291786A
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- silicon wafer
- magnetic field
- reaction kettle
- nano structure
- vibrator
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 44
- 239000010703 silicon Substances 0.000 title claims abstract description 44
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000002923 metal particle Substances 0.000 claims abstract description 19
- 238000004804 winding Methods 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 abstract description 8
- 239000002253 acid Substances 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000011529 conductive interlayer Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a silicon wafer micro-nano structure preparation device combining a magnetic field and vibration, which comprises an armature coil, an enameled wire winding group, a reaction kettle, a vibrator and a clamping tray, wherein the armature coil is arranged on the armature coil; the armature ring is fixed on the side wall of the reaction kettle; three enameled wires are wound on the armature ring; the clamping push disc is fixed at the bottom of the reaction kettle; the bottom of the reaction kettle is fixedly connected with the output end of the vibrator; the vibrator and the three enameled wire winding groups are respectively connected with a power supply. According to the invention, different magnetic field distributions can be obtained by changing the frequency, phase and amplitude of the current introduced into the three enameled wire winding groups, so that different preset patterns can be etched on the silicon wafer by acid in the corrosive liquid aggregated around the magnetic conductivity metal particles; the invention has simple structure and higher precision in silicon wafer processing.
Description
Technical Field
The invention belongs to the technical field of silicon wafer micro-nano structure processing, and particularly relates to a magnetic field and vibration combined silicon wafer micro-nano structure preparation device.
Background
The micro-nano structure on the surface of the silicon wafer has wide application in the fields of sensors, electronic circuits, new energy and the like. The existing method for preparing the silicon micro-nano structure mainly comprises dry etching and wet etching; compared with dry etching, the wet etching process is simple, low in cost and more beneficial to industrial development. Noble metal catalytic chemical corrosion is one of wet etching and is naturally concerned; however, the quality and the etching speed of the nano structure manufactured by metal catalytic chemical corrosion are influenced by the etching temperature, the self crystal orientation force of silicon, the types of noble metals, the concentration of etching liquid and the types of etching liquid, the etching direction cannot be controlled, so that the high-quality nano structure cannot be manufactured, and the problems of low accuracy and difficult control exist due to the slow etching speed; therefore, at present, a silicon wafer surface micro-nano structure processing device with controllability and high precision is required to be provided to improve the silicon wafer processing efficiency.
Disclosure of Invention
In order to solve the problems in the etching technology, the invention provides a device combining a magnetic field and vibration, which controls the motion of metal particles through the magnetic field and the vibration, realizes the control of the silicon surface nano structure and improves the preparation efficiency.
The invention relates to a magnetic field and vibration combined silicon wafer micro-nano structure preparation device, which comprises an armature coil, an enameled wire winding group, a reaction kettle, a vibrator and a clamping tray, wherein the armature coil is arranged on the armature coil; the armature ring is fixed on the side wall of the reaction kettle; three enameled wires are wound on the armature ring; the clamping push disc is fixed at the bottom of the reaction kettle; the bottom of the reaction kettle is fixedly connected with the output end of the vibrator; the vibrator and the three enameled wire winding groups are respectively connected with a power supply.
Preferably, the magnetic conductive metal particles are also included.
Preferably, the power supply adopts alternating current.
More preferably, a resistor is connected in series between the enameled wire winding group and the power supply.
Preferably, the clamping tray comprises a cross plate, a sliding rod, a limiting block and a spring; the cross plate is fixed at the bottom of the reaction kettle; the four arms of the cross plate are provided with round holes; the inner ends of the four slide bars and the round holes of the four arms of the cross plate respectively form a sliding pair; a limiting block is fixed at the outer end of the sliding rod; each limiting block is connected with one round hole at the corresponding position through a spring with pretension.
The invention has the beneficial effects that:
the silicon wafer is fixed by the clamping tray; separating out magnetic conductive metal particles from the magnetic conductive interlayer on the surface of the silicon wafer through vibration of a vibrator; the three enameled wire winding groups are electrified to generate a magnetic field, so that the magnetic conductive metal particles can move along the main magnetic flux of the magnetic field and collide with the silicon wafer under the vibration action of the vibrator; through a vibrator and a magnetic field, the magnetic conductive metal particles can continuously and repeatedly collide with the silicon wafer, and acid which is gathered in corrosive liquid around the magnetic conductive metal particles and plays a corrosive role impacts the surface of the silicon wafer along with the magnetic conductive metal particles to react with the silicon wafer; according to the invention, different magnetic field distributions can be obtained by changing the frequency, phase and amplitude of the current introduced into the three enameled wire winding groups, so that different preset patterns can be etched on the silicon wafer by acid in the corrosive liquid aggregated around the magnetic conductivity metal particles; the invention has simple structure and higher precision in silicon wafer processing.
Drawings
FIG. 1 is a schematic view of the assembled relationship of the present invention;
fig. 2 is a schematic view of the structure of the clamping tray of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
The invention relates to a silicon wafer micro-nano structure preparation device combining a magnetic field and vibration, which comprises an armature coil 5, an enameled wire winding group 4, a reaction kettle 7, a vibrator 6 and a clamping tray 8, wherein the armature coil is arranged on the armature coil; the armature ring 5 is fixed on the side wall of the reaction kettle 7; the three enameled wire winding groups 4 are wound on the armature coil 5; the clamping push disc 8 is fixed at the bottom of the reaction kettle 7; the bottom of the reaction kettle 7 is fixedly connected with the output end of the vibrator 6; the vibrator 6 and the three enameled wire winding groups 4 are respectively connected with a power supply 2.
As a preferred embodiment, the present invention further comprises magnetically permeable metal particles.
As a preferred embodiment, the power supply 2 uses alternating current.
As a more preferable embodiment, a resistor 3 is connected in series between the enameled wire winding group 4 and the power supply 2; the resistor 3 can protect the circuit and improve the stability of the circuit.
As a preferred embodiment, as shown in fig. 2, the clamping tray 8 includes a cross plate, a slide bar, a stopper and a spring; the cross plate is fixed at the bottom of the reaction kettle 7; the four arms of the cross plate are provided with round holes; the inner ends of the four slide bars and the round holes of the four arms of the cross plate respectively form a sliding pair; a limiting block is fixed at the outer end of the sliding rod; each limiting block is connected with one round hole at the corresponding position through a spring with pretension; when the silicon wafer is to be fixed, the limiting blocks are pulled outwards, after the silicon wafer is placed on the cross plate, the limiting blocks are loosened, and the four limiting blocks press the periphery of the silicon wafer under the action of spring tension; when the silicon wafer is taken down, the four limit blocks return to the initial positions under the action of the tensile force of the springs.
The power supply 2 and the vibrator 6 are both connected with the controller 1 and controlled by the controller.
Under the condition that all the above embodiments are provided, the working principle of the invention is as follows:
depositing a magnetic conductive interlayer metal film (magnetic conductive material is clamped in the metal film and can release magnetic conductive metal particles during vibration) on the surface of the silicon wafer in advance, and fixing the silicon wafer on a clamping tray 8 in a reaction kettle 7; or directly fixing the silicon wafer without the deposited magnetic conductive interlayer metal film on a clamping tray 8 in the reaction kettle 7, and additionally placing the magnetic conductive metal particles prepared in advance; then, adjusting the frequency, phase and amplitude of the current in the three enameled wire winding groups 4 to enable the three enameled wire winding groups to generate magnetic fields which are mutually overlapped, wherein a magnetic path of the magnetic fields penetrates through a silicon wafer in the reaction kettle 7, and a shape which is consistent with a preset micro-nano structure is formed on the surface of the silicon wafer; then, starting the vibrator 6, injecting corrosive liquid into the reaction kettle 7, and if a magnetic conductive interlayer metal film is deposited on the silicon wafer, outwardly separating magnetic conductive metal particles from the magnetic conductive interlayer metal film; under the action of magnetic force, the magnetic conductive metal particles are distributed along the main magnetic flux and move along the direction of the magnetic force line until colliding with the surface of the silicon wafer; under the action of the vibrator 6, the magnetic conductive metal particles continuously collide with the silicon wafer; the acid in the corrosive liquid gathered around the magnetic metal particles impacts the surface of the silicon wafer along with the magnetic metal particles to react with the silicon wafer; after a preset time, finishing the preparation of the micro-nano structure on the surface of the silicon wafer; different magnetic field distributions can be obtained by changing the frequency, the phase and the amplitude of the current introduced into the three enameled wire winding groups, so that the acid in the corrosive liquid aggregated around the magnetic conductivity metal particles can etch a preset pattern on the silicon chip.
Claims (5)
1. The utility model provides a magnetic field and vibration combined's silicon chip micro-nano structure preparation facilities, includes reation kettle and presss from both sides tight tray, its characterized in that: the device also comprises an armature coil, an enameled wire winding group and a vibrator; the armature ring is fixed on the side wall of the reaction kettle; three enameled wires are wound on the armature ring; the clamping push disc is fixed at the bottom of the reaction kettle; the bottom of the reaction kettle is fixedly connected with the output end of the vibrator; the vibrator and the three enameled wire winding groups are respectively connected with a power supply.
2. The silicon wafer micro-nano structure preparation device combining the magnetic field and the vibration according to claim 1, characterized in that: also comprises magnetic conductive metal particles.
3. The silicon wafer micro-nano structure preparation device combining the magnetic field and the vibration according to claim 1 or 2, characterized in that: the power supply adopts alternating current.
4. The silicon wafer micro-nano structure preparation device combining the magnetic field and the vibration according to claim 3, characterized in that: and a resistor is connected in series between the enameled wire winding group and the power supply.
5. The silicon wafer micro-nano structure preparation device combining the magnetic field and the vibration according to claim 1, characterized in that: the clamping tray comprises a cross plate, a sliding rod, a limiting block and a spring; the cross plate is fixed at the bottom of the reaction kettle; the four arms of the cross plate are provided with round holes; the inner ends of the four slide bars and the round holes of the four arms of the cross plate respectively form a sliding pair; a limiting block is fixed at the outer end of the sliding rod; each limiting block is connected with one round hole at the corresponding position through a spring with pretension.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111681487.0A CN114291786A (en) | 2021-12-29 | 2021-12-29 | Magnetic field and vibration combined silicon wafer micro-nano structure preparation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111681487.0A CN114291786A (en) | 2021-12-29 | 2021-12-29 | Magnetic field and vibration combined silicon wafer micro-nano structure preparation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114291786A true CN114291786A (en) | 2022-04-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111681487.0A Pending CN114291786A (en) | 2021-12-29 | 2021-12-29 | Magnetic field and vibration combined silicon wafer micro-nano structure preparation device |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1589729A (en) * | 2003-09-05 | 2005-03-09 | 西门子公司 | Magnet coil system for contactless movement of a magnetic body in a working space |
| US20140191371A1 (en) * | 2013-01-07 | 2014-07-10 | International Business Machines Corporation | Catalytic Etch With Magnetic Direction Control |
| CN104451830A (en) * | 2014-11-27 | 2015-03-25 | 东北石油大学 | Method and device for preparing metal-based nanometer ceramic in laboratory |
| CN104584231A (en) * | 2012-03-19 | 2015-04-29 | 可持续能源联合有限责任公司(美国) | Copper-assisted, anti-reflection etching of silicon surfaces |
| US20150137321A1 (en) * | 2013-11-15 | 2015-05-21 | The Board Of Trustees Of The University Of Illinois | Apparatus and method for magnetic-field guided metal-assisted chemical etching |
| CN106847738A (en) * | 2017-01-19 | 2017-06-13 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | A kind of wafer clamping device |
| CN109860039A (en) * | 2018-12-21 | 2019-06-07 | 苏州矩阵光电有限公司 | A kind of device and method of magnetic field auxiliary chemical etching |
| CN112736014A (en) * | 2020-12-30 | 2021-04-30 | 中科晶源微电子技术（北京）有限公司 | Wafer locking mechanism for locking wafer, wafer positioning device and wafer conveying equipment |
-
2021
- 2021-12-29 CN CN202111681487.0A patent/CN114291786A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1589729A (en) * | 2003-09-05 | 2005-03-09 | 西门子公司 | Magnet coil system for contactless movement of a magnetic body in a working space |
| CN104584231A (en) * | 2012-03-19 | 2015-04-29 | 可持续能源联合有限责任公司(美国) | Copper-assisted, anti-reflection etching of silicon surfaces |
| US20140191371A1 (en) * | 2013-01-07 | 2014-07-10 | International Business Machines Corporation | Catalytic Etch With Magnetic Direction Control |
| US20150137321A1 (en) * | 2013-11-15 | 2015-05-21 | The Board Of Trustees Of The University Of Illinois | Apparatus and method for magnetic-field guided metal-assisted chemical etching |
| CN104451830A (en) * | 2014-11-27 | 2015-03-25 | 东北石油大学 | Method and device for preparing metal-based nanometer ceramic in laboratory |
| CN106847738A (en) * | 2017-01-19 | 2017-06-13 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | A kind of wafer clamping device |
| CN109860039A (en) * | 2018-12-21 | 2019-06-07 | 苏州矩阵光电有限公司 | A kind of device and method of magnetic field auxiliary chemical etching |
| CN112736014A (en) * | 2020-12-30 | 2021-04-30 | 中科晶源微电子技术（北京）有限公司 | Wafer locking mechanism for locking wafer, wafer positioning device and wafer conveying equipment |
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Application publication date: 20220408 |