CN107946386A - A kind of matte preparation method of black silion cell - Google Patents
A kind of matte preparation method of black silion cell Download PDFInfo
- Publication number
- CN107946386A CN107946386A CN201711249652.9A CN201711249652A CN107946386A CN 107946386 A CN107946386 A CN 107946386A CN 201711249652 A CN201711249652 A CN 201711249652A CN 107946386 A CN107946386 A CN 107946386A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- photoetching glue
- glue surface
- matte
- silion cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- 239000003292 glue Substances 0.000 claims abstract description 41
- 238000001259 photo etching Methods 0.000 claims abstract description 41
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 12
- 238000001039 wet etching Methods 0.000 claims abstract description 11
- 238000004528 spin coating Methods 0.000 claims abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims 1
- 239000011148 porous material Substances 0.000 abstract description 7
- 230000031700 light absorption Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 241000894007 species Species 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
Abstract
This application provides a kind of matte preparation method of black silion cell, including：Photoetching glue surface is made in silicon chip surface spin coating photoresist；Laser explosure is carried out to the photoetching glue surface；Structuring pretreatment is carried out to the photoetching glue surface after laser explosure；Metal layer is made in the photoetching glue surface by structuring pretreatment；Wash the photoresist layer；Wet etching is carried out on the silicon chip, forms black silicon matte.The preparation method of the application, preparation process is simple, and obtained black silicon matte nano-pore structure size is controllable, improves the controllability of nanometer suede preparation, has repeatability, can greatly improve the absorption of light.
Description
Technical field
The invention belongs to technical field of solar, more particularly to a kind of matte preparation method of black silion cell.
Background technology
Photovoltaic industry is still based on crystal silicon solar batteries at present, in order to improve suction of the solar cell to incident light
Receive, commercial monocrystalline and polysilicon chip are generally handled using surface wool manufacturing, and the surface matte of single-chip is pyramid structure, polycrystalline
The surface matte of piece is vermicular texture, and it is left that its absorptivity in visible-range can reach 88% and 80% respectively
The right side, but the reflectivity of battery surface is still higher, particularly in ultraviolet and infrared band.Researcher has found to work as crystal silicon surface
Suede structure size reduction to nanometer scale when, obtained silicon chip surface is in black, i.e. referred to as black silicon.Black silion cell can be with
Accomplish, to visible ray hypersorption, to improve the photoelectric conversion efficiency of solar cell.
Black silicon technology is developed so far, and a variety of matte preparation processes occurs, such as reactive ion etching method, electrochemical corrosion
Method, metal assistant chemical etch etc., but textured surfaces structure prepared by these methods is uncontrollable, has greatly unstable
It is qualitative, thus also cause the unstable of black silion cell utilization ratio.
The content of the invention
To solve the above problems, the present invention provides a kind of matte preparation method of black silion cell, preparation process is simple, obtains
The black silicon matte nano-pore structure size arrived is controllable, improves the controllability of nanometer suede preparation, has repeatability, Ke Yiji
The big absorption for improving light.
A kind of matte preparation method of black silion cell provided by the invention, including：
Photoetching glue surface is made in silicon chip surface spin coating photoresist；
Laser explosure is carried out to the photoetching glue surface；
Structuring pretreatment is carried out to the photoetching glue surface after laser explosure；
Metal layer is made in the photoetching glue surface by structuring pretreatment；
Wash the photoresist layer；
Wet etching is carried out on the silicon chip, forms black silicon matte.
Preferably, it is described to be to photoetching glue surface progress laser explosure：
The silicon chip is placed in laser optical path, carries out first time laser explosure, then by 90 ° of the silicon slice rotating,
Carry out second of laser explosure.
Preferably, the photoetching glue surface progress structuring to after laser explosure, which pre-processes, is：
The silicon chip is cleaned using developer solution, then cleans the silicon chip with deionized water to remove the institute of silicon chip surface again
State developer solution.
Preferably, metal layer is made in the photoetching glue surface by structuring pretreatment is：
The evaporated metal layer in the photoetching glue surface by structuring pretreatment.
Preferably, the wet etching that carried out on the silicon chip is：
The silicon chip is placed in the mixed solution of hydrofluoric acid, nitric acid and deionized water and is reacted.
Preferably, the first time Laser exposure dwell times are 5-30s, and second of Laser exposure dwell times are 5-30s.
Preferably, the temperature of the evaporation is 300-350 DEG C, and evaporation electric current is 60-80mA, evaporation time 5-10min,
The thickness of evaporation metal is 10-50nm.
Preferably, the volume ratio of the hydrofluoric acid, the nitric acid and the deionized water is：0.1-1:1-4:0.5-2.5.
Preferably, reaction temperature is room temperature, reaction time 30-200s.
By foregoing description, the matte preparation method of black silion cell provided by the invention, due to including：In silicon chip table
Spin coating photoresist in face makes photoetching glue surface；Laser explosure is carried out to photoetching glue surface；Photoetching glue surface after laser explosure is tied
Structureization pre-processes；One layer of metal layer is made in the photoetching glue surface by structuring pretreatment；Wash photoresist layer；In silicon chip
Upper carry out wet etching, therefore obtained black silicon matte nano-pore structure size is controllable, improves the controllable of nanometer suede preparation
Property, there is repeatability, can greatly improve the absorption of light.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow diagram of the matte preparation method of black silion cell provided by the embodiments of the present application.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment, belongs to the scope of protection of the invention.
As shown in Figure 1, the flow that Fig. 1 is a kind of matte preparation method of black silion cell provided by the embodiments of the present application is illustrated
Figure.
A kind of matte preparation method of black silion cell provided by the embodiments of the present application, includes the following steps：
S1：Photoetching glue surface is made in silicon chip surface spin coating photoresist；
It is a variety of that the battery structure of the present invention includes conventional single, polycrystalline battery, PERC, N-shaped double-side cell, IBC batteries etc.
High efficiency cell configuration, wherein silicon chip also include N-type silicon chip or P-type wafer, and the silicon chip of selection can be monocrystalline, polycrystalline and class list
Crystal structure, needs exist for explanation, the concrete structure and species of silicon chip is not specifically limited；Revolved to silicon chip surface
Before resist coating, first using absolute ethyl alcohol and the mixed liquor cleaning silicon chip of deionized water, then at silicon chip table after silicon chip dries
One layer of photoresist of face spin coating, the wherein film thickness of photoresist are for 10-100nm, it is necessary to illustrate, to anhydrous in cleaning process
The concentration ratio of ethanol and deionized water does not require, as long as can reach the effect for removing silicon chip surface pollutant.
As if desired, the mass fraction of absolute ethyl alcohol can be selected than 70%, the resistivity 18M Ω cm of deionized water.
S2：Laser explosure is carried out to the photoetching glue surface；
It should be noted that the laser equipment for carrying out laser explosure is preferably Single wavelength laser, to further improve collimation
Property, optical maser wavelength 380-460nm, laser power 50-100mW.
S3：Structuring pretreatment is carried out to the photoetching glue surface after laser explosure；
Structuring pretreatment is carried out to the photoetching glue surface after laser explosure, so that silicon chip surface is only remained with poroid
The photoresist of structure, so as to form uneven and uniform photoetching glue surface, realizes surface-texturing.
S4：Metal layer is made in the photoetching glue surface by structuring pretreatment；
It should be noted that the technique for making metal layer can be the existing process such as evaporation, plating or magnetron sputtering, gold
It can be layer gold, silver layer or layers of copper etc. to belong to layer, first depositing metallic nanoparticles, the number of plies of certain metal layer in photoetching glue surface
It can also be adjusted as needed, then again by further controlling size and the distribution of metal nanoparticle, with favourable
In the structure and morphology to controlling matte.
S5：Wash the photoresist layer；
It should be noted that after making metal layer, by the cleaning to photoresist layer, the metal on photoresist layer can be clear
Wash off, and the metal in the hole that surface structuration pretreatment produces in photoetching glue surface can then remain, this part of gold
Metal particles are used for the etching process for being catalyzed follow-up silicon chip, to obtain regular pore space structure.Need exist for explanation, cleaning
During can select to be cleaned with acetone or hydrofluoric acid, and the concentration of acetone and hydrofluoric acid is not specially required, work
The solution of industry rank, such as HF mass fractions 40%, acetone is analyzes pure rank, as long as can reach identical technique effect i.e.
Can.
S6：Wet etching is carried out on the silicon chip, forms black silicon matte.
Etching is modified to silicon wafer suede structure using wet etching, metallic particles is removed so that nano-pore structure
Size is controllable, reduces the surface recombination that silicon wafer suede structure is prepared into carrier after battery, also further reduces silicon chip surface
Reflectivity.
By foregoing description, above-mentioned a kind of matte preparation method of black silion cell provided by the embodiments of the present application, by
In including：Photoetching glue surface is made in silicon chip surface spin coating photoresist；Laser explosure is carried out to photoetching glue surface；After laser explosure
Photoetching glue surface carries out structuring pretreatment；One layer of metal layer is made in the photoetching glue surface by structuring pretreatment；Wash
Photoresist layer；Wet etching is carried out on silicon chip, therefore obtained black silicon matte nano-pore structure size is controllable, improves nanometer
Controllability prepared by matte, has repeatability, can greatly improve the absorption of light.
Further, in above-mentioned preparation method, following technical characteristic is further included：
Carrying out laser explosure to the photoetching glue surface is：The silicon chip is placed in laser optical path, swash for the first time
Light exposes, and then by 90 ° of the silicon slice rotating, carries out second of laser explosure.
The first time Laser exposure dwell times are 5-30s, and second of Laser exposure dwell times are 5-30s.
Double exposure to form cross cut on a photoresist, so that the formation for hole on follow-up photoresist provides benchmark
Point, laser equipment are preferably Single wavelength laser, and to increase collimation height, the power of wherein Single wavelength laser is bigger, required exposure
Time is shorter.Explanation is needed exist for, time for exposure and exposure frequency can also be adjusted according to different demands, and two
Secondary exposure so that show the spread pattern of hole on photoresist, can also multiexposure, multiple exposure so that showing difference on photoresist
The spread pattern of shape.
Further, in above-mentioned preparation method, following technical characteristic is further included：
The photoetching glue surface to after laser explosure carries out structuring pretreatment：
The silicon chip is cleaned using developer solution, then cleans the silicon chip with deionized water to remove the institute of silicon chip surface again
State developer solution.
By developer solution cleaning by the photoresist after laser explosure, the photoresist with formation in the arrangement of periodicity mesh pattern
Face.
Developer solution is the developer solution to match with photoresist, and concentration can be original liquid concentration, and need exist for explanation is pair
The species of photoresist and the species of developer solution are matched with developer solution and can reached without special requirement, a light requirement photoresist
Identical technique effect, such as the supporting photoresist and developer solution of SU8 series.It is of course also possible to according to different needs pair
Related solution is diluted, if such as after diluting developer solution, developing time can also extend therewith.
Further, in above-mentioned preparation method, following technical characteristic is further included：
One layer of metal layer is made in the photoetching glue surface by structuring pretreatment is：
One layer of metal layer is deposited in the photoetching glue surface by structuring pretreatment.Preferably, the temperature of the evaporation is
300-350 DEG C, evaporation electric current is 60-80mA, and evaporation time 5-10min, the thickness of evaporation metal is 10-50nm.Metal layer
It can be layer gold, silver layer or layers of copper etc., one layer of metal nanoparticle first be deposited in photoetching glue surface, by controlling metal nano
The size of particle and distribution, to be conducive to the structure and morphology to controlling matte.
Further, in above-mentioned preparation method, following technical characteristic is further included：
It is described on the silicon chip carry out wet etching be：
The silicon chip is placed in the mixed solution of hydrofluoric acid, nitric acid and deionized water and is reacted, hydrofluoric acid, nitric acid
Volume ratio with deionized water is：0.1-1:1-4:0.5-2.5, reaction temperature are room temperature, reaction time 30-200s, etched hole
Hole dia 20-100nm, hole depth 100-500nm.
Conventional black silicon matte preparation method generally uses wet-chemical chamber method, and the wherein method of wet etching is specially and is carving
Silver nitrate is added with erosion liquid, any little particle of silicon chip attachment is reduced into, then continues to etch in the place where metal, this
Kind method is excessively uncontrollable.
In conclusion the matte preparation method of the black silion cell provided using such scheme, obtained black silicon matte nanometer
Pore structure size is controllable, improves the controllability of nanometer suede preparation, has repeatability, can greatly improve the absorption of light.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (9)
- A kind of 1. matte preparation method of black silion cell, it is characterised in that including：Photoetching glue surface is made in silicon chip surface spin coating photoresist；Laser explosure is carried out to the photoetching glue surface；Structuring pretreatment is carried out to the photoetching glue surface after laser explosure；Metal layer is made in the photoetching glue surface by structuring pretreatment；Wash the photoresist layer；Wet etching is carried out on the silicon chip, forms black silicon matte.
- 2. the matte preparation method of black silion cell according to claim 1, it is characterised in thatIt is described to be to photoetching glue surface progress laser explosure：The silicon chip is placed in laser optical path, carries out first time laser explosure, then by 90 ° of the silicon slice rotating, is carried out Second of laser explosure.
- 3. the matte preparation method of black silion cell according to claim 1, it is characterised in that it is described to laser explosure after Photoetching glue surface carries out structuring pretreatment：The silicon chip is cleaned using developer solution, then cleans the silicon chip with deionized water to remove the described aobvious of silicon chip surface again Shadow liquid.
- 4. the matte preparation method of black silion cell according to claim 1, it is characterised in that described pre- by structuring Metal layer is made in the photoetching glue surface of processing is：The evaporated metal layer in the photoetching glue surface by structuring pretreatment.
- 5. the matte preparation method of black silion cell according to claim 1, it is characterised in that described enterprising in the silicon chip Row wet etching is：The silicon chip is placed in the mixed solution of hydrofluoric acid, nitric acid and deionized water and is reacted.
- 6. the matte preparation method of black silion cell according to claim 2, it is characterised in that the first time laser explosure Time is 5-30s, and second of Laser exposure dwell times are 5-30s.
- 7. the matte preparation method of black silion cell according to claim 4, it is characterised in that the temperature of the evaporation is 300-350 DEG C, evaporation electric current is 60-80mA, and evaporation time 5-10min, the thickness of evaporation metal is 10-50nm.
- 8. the matte preparation method of black silion cell according to claim 5, it is characterised in that the hydrofluoric acid, the nitre The volume ratio of sour and described deionized water is：0.1-1:1-4:0.5-2.5.
- 9. the matte preparation method of black silion cell according to claim 5, it is characterised in that reaction temperature is room temperature, instead 30-200s between seasonable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711249652.9A CN107946386A (en) | 2017-12-01 | 2017-12-01 | A kind of matte preparation method of black silion cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711249652.9A CN107946386A (en) | 2017-12-01 | 2017-12-01 | A kind of matte preparation method of black silion cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107946386A true CN107946386A (en) | 2018-04-20 |
Family
ID=61948277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711249652.9A Pending CN107946386A (en) | 2017-12-01 | 2017-12-01 | A kind of matte preparation method of black silion cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107946386A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109285898A (en) * | 2018-10-16 | 2019-01-29 | 江西展宇新能源股份有限公司 | A kind of preparation method of black silicon suede structure |
| CN111697088A (en) * | 2020-05-19 | 2020-09-22 | 苏州大学 | Preparation method of patterned silicon structure and silicon-based photovoltaic cell |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101104242A (en) * | 2007-09-11 | 2008-01-16 | 西安飞机工业（集团）有限责任公司 | Numerically controlled processing method for plane wing rib beam part |
| CN101540348A (en) * | 2008-12-12 | 2009-09-23 | 北京师范大学 | Preparation technology of multi-purpose silicon micro-nano structure |
| CN201362022Y (en) * | 2008-11-07 | 2009-12-16 | 徐黎明 | Printing plate punching and bending machine |
| CN102447011A (en) * | 2011-12-15 | 2012-05-09 | 华中科技大学 | Method for manufacturing solar battery photoanode and product thereof |
| CN102825389A (en) * | 2011-06-15 | 2012-12-19 | 吉富新能源科技(上海)有限公司 | Laser lineation positioning technique capable of enhancing solar cell conversion efficiency |
| CN103159165A (en) * | 2013-03-15 | 2013-06-19 | 北京科技大学 | Method for preparing patterning silicon nanometer well array |
| CN103928542A (en) * | 2014-04-30 | 2014-07-16 | 陕西师范大学 | Silicon solar cell, manufacturing method and device of silicon solar cell and surface structure of silicon solar cell |
| CN104584231A (en) * | 2012-03-19 | 2015-04-29 | 可持续能源联合有限责任公司(美国) | Copper-assisted, anti-reflection etching of silicon surfaces |
| CN105226113A (en) * | 2015-07-09 | 2016-01-06 | 苏州阿特斯阳光电力科技有限公司 | Suede structure of a kind of crystal silicon solar energy battery and preparation method thereof |
| CN205194713U (en) * | 2015-10-30 | 2016-04-27 | 中国科学院物理研究所 | A silicon chip for solar cell |
| CN105810762A (en) * | 2016-05-23 | 2016-07-27 | 协鑫集成科技股份有限公司 | Crystal silicon wafer nanometer textured surface structure and preparation method therefor |
| CN107177889A (en) * | 2017-05-22 | 2017-09-19 | 嘉兴尚能光伏材料科技有限公司 | A kind of surface matte preparation method of monocrystaline silicon solar cell |
-
2017
- 2017-12-01 CN CN201711249652.9A patent/CN107946386A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101104242A (en) * | 2007-09-11 | 2008-01-16 | 西安飞机工业（集团）有限责任公司 | Numerically controlled processing method for plane wing rib beam part |
| CN201362022Y (en) * | 2008-11-07 | 2009-12-16 | 徐黎明 | Printing plate punching and bending machine |
| CN101540348A (en) * | 2008-12-12 | 2009-09-23 | 北京师范大学 | Preparation technology of multi-purpose silicon micro-nano structure |
| CN102825389A (en) * | 2011-06-15 | 2012-12-19 | 吉富新能源科技(上海)有限公司 | Laser lineation positioning technique capable of enhancing solar cell conversion efficiency |
| CN102447011A (en) * | 2011-12-15 | 2012-05-09 | 华中科技大学 | Method for manufacturing solar battery photoanode and product thereof |
| CN104584231A (en) * | 2012-03-19 | 2015-04-29 | 可持续能源联合有限责任公司(美国) | Copper-assisted, anti-reflection etching of silicon surfaces |
| CN103159165A (en) * | 2013-03-15 | 2013-06-19 | 北京科技大学 | Method for preparing patterning silicon nanometer well array |
| CN103928542A (en) * | 2014-04-30 | 2014-07-16 | 陕西师范大学 | Silicon solar cell, manufacturing method and device of silicon solar cell and surface structure of silicon solar cell |
| CN105226113A (en) * | 2015-07-09 | 2016-01-06 | 苏州阿特斯阳光电力科技有限公司 | Suede structure of a kind of crystal silicon solar energy battery and preparation method thereof |
| CN205194713U (en) * | 2015-10-30 | 2016-04-27 | 中国科学院物理研究所 | A silicon chip for solar cell |
| CN105810762A (en) * | 2016-05-23 | 2016-07-27 | 协鑫集成科技股份有限公司 | Crystal silicon wafer nanometer textured surface structure and preparation method therefor |
| CN107177889A (en) * | 2017-05-22 | 2017-09-19 | 嘉兴尚能光伏材料科技有限公司 | A kind of surface matte preparation method of monocrystaline silicon solar cell |
Non-Patent Citations (1)
| Title |
|---|
| RALF B. WEHRSPOHN: "《Photo Management in Solar Cells》", 27 March 2015, WILEY‐VCH出版社 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109285898A (en) * | 2018-10-16 | 2019-01-29 | 江西展宇新能源股份有限公司 | A kind of preparation method of black silicon suede structure |
| CN111697088A (en) * | 2020-05-19 | 2020-09-22 | 苏州大学 | Preparation method of patterned silicon structure and silicon-based photovoltaic cell |
| CN111697088B (en) * | 2020-05-19 | 2022-03-01 | 苏州大学 | Preparation method of patterned silicon structure and silicon-based photovoltaic cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101962469B1 (en) | A method for producing a textured structure of a crystalline silicon solar cell | |
| CN104992990B (en) | A kind of method for reducing surface light reflectivity of silicon chip | |
| CN105745764B (en) | The method, apparatus and system of passivation for solar cell and other semiconductor devices | |
| JP6553731B2 (en) | N-type double-sided battery wet etching method | |
| Chen et al. | 0.76% absolute efficiency increase for screen-printed multicrystalline silicon solar cells with nanostructures by reactive ion etching | |
| CN103531656A (en) | Preparation method of textures of monocrystalline silicon piece of solar cell | |
| Wang et al. | 18.88%-efficient multi-crystalline silicon solar cells by combining Cu-catalyzed chemical etching and post-treatment process | |
| CN109638088A (en) | Solar battery and preparation method thereof and etching method | |
| CN109545868A (en) | Graphene quantum dot/black silicon heterogenous solar battery and preparation method thereof | |
| CN106229386A (en) | A kind of method that silver-bearing copper bimetallic MACE method prepares black silicon structure | |
| CN106449878A (en) | Black silicon preparing method, fluffing machine and black silicon manufactured through preparing method | |
| Haiyuan et al. | Controllable nanoscale inverted pyramids for highly efficient quasi-omnidirectional crystalline silicon solar cells | |
| CN107946386A (en) | A kind of matte preparation method of black silion cell | |
| Schnell et al. | Plasma surface texturization for multicrystalline silicon solar cells | |
| CN104362219B (en) | Crystalline solar cell production process | |
| CN106340446A (en) | Method for removing surface line marks of diamond linear cutting polycrystalline silicon chip through wet method | |
| Aurang et al. | Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices | |
| Gu et al. | Large-scale preparation of 22.06% efficiency single-crystalline silicon solar cells with inverted pyramid microstructure through nanostructure rebuilding treatment | |
| CN104124286A (en) | Self-growing noble metal plasma element nano-structure and application thereof to increase of light absorption of GaInP-based solar cell | |
| Lin et al. | Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique | |
| CN108054231A (en) | A kind of four-junction solar battery and production method based on Si substrates | |
| JP2007142471A (en) | Method for manufacturing solar cell | |
| Ruby et al. | Plasma-texturization for multicrystalline silicon solar cells | |
| KR101090397B1 (en) | Selectively patterned nano-porous structure on silicon substrate for solar cell and preparation method thereof | |
| CN100490186C (en) | Improved photovoltaic cell and method of production thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180420 |